Feijoo Guerro, Pedro Carlos pc.feijoo@upm.es
Actividades
- Artículos 24
- Libros 0
- Capítulos de libro 0
- Congresos 44
- Documentos de trabajo 0
- Informes técnicos 0
- Proyectos de investigación 12
- Tesis dirigidas 0
- Patentes o licencias de software 0
An Extraction Method for Mobility Degradation and Contact Resistance of Graphene Transistors
- Pacheco-Sanchez A
- Mavredakis N
- Feijoo PC
- Jimenez D
Ieee Transactions On Electron Devices (p. 4037-4041) - 1/7/2022
10.1109/ted.2022.3176830 Ver en origen
- ISSN 00189383
Compact Modeling Technology for the Simulation of Integrated Circuits Based on Graphene Field-Effect Transistors
- Pasadas F
- Feijoo PC
- Mavredakis N
- Pacheco-Sanchez A
- Chaves FA
- Jiménez D
Advanced Materials - 1/12/2022
10.1002/adma.202201691 Ver en origen
- ISSN 09359648
Unveiling the impact of the bias-dependent charge neutrality point on graphene based multi-transistor applications
- Pasadas F
- Medina-Rull A
- Feijoo PC
- Pacheco-Sanchez A
- Marin EG
- Ruiz FG
- Rodriguez N
- Godoy A
- Jiménez D
Nano Express - 1/9/2021
10.1088/2632-959x/abfdd0 Ver en origen
- ISSN 2632959X
Does carrier velocity saturation help to enhance: F maxin graphene field-effect transistors?
- Feijoo PC
- Pasadas F
- Bonmann M
- Asad M
- Yang X
- Generalov A
- Vorobiev A
- Banszerus L
- Stampfer C
- Otto M
- Neumaier D
- Stake J
- Jiménez D
Nanoscale Advances (p. 4179-4186) - 1/9/2020
10.1039/c9na00733d Ver en origen
- ISSN 25160230
2D pn junctions driven out-of-equilibrium
- Chaves FA
- Feijoo PC
- Jiménez D
Nanoscale Advances (p. 3252-3262) - 1/8/2020
10.1039/d0na00267d Ver en origen
- ISSN 25160230
Experimental Observation and Modeling of the Impact of Traps on Static and Analog/HF Performance of Graphene Transistors
Ieee Transactions On Electron Devices (p. 5790-5796) - 1/12/2020
10.1109/ted.2020.3029542 Ver en origen
- ISSN 00189383
Contact resistance extraction of graphene FET technologies based on individual device characterization
- Pacheco-Sanchez A
- Feijoo PC
- Jiménez D
Solid-State Electronics - 1/10/2020
10.1016/j.sse.2020.107882 Ver en origen
- ISSN 00381101
Radio frequency performance projection and stability tradeoff of h-BN encapsulated graphene field-effect transistors
- Feijoo PC
- Pasadas F
- Iglesias JM
- Hamham EM
- Rengel R
- Jiménez D
Ieee Transactions On Electron Devices (p. 1567-1573) - 1/3/2019
10.1109/ted.2018.2890192 Ver en origen
- ISSN 00189383
High-k gadolinium scandate on Si obtained by high pressure sputtering from metal targets and in-situ plasma oxidation
- Pampillón MA
- San Andrés E
- Feijoo PC
- Fierro JLG
Semiconductor Science And Technology - 10/2/2017
10.1088/1361-6641/aa58cc Ver en origen
- ISSN 13616641
Scaling of graphene field-effect transistors supported on hexagonal boron nitride: Radio-frequency stability as a limiting factor
- Feijoo P
- Pasadas F
- Iglesias J
- Martin M
- Rengel R
- Li C
- Kim W
- Riikonen J
- Lipsanen H
- Jiménez D
Nanotechnology - 6/11/2017
10.1088/1361-6528/aa9094 Ver en origen
- ISSN 09574484
Este/a investigador/a no tiene libros.
Este/a investigador/a no tiene capítulos de libro.
Plasma oxidation of metallic gadolinium deposited on silicon by high pressure sputtering as high permittivity dielectric
- Pampillon, M. A.
- Feijoo, P. C.
- Andres, E. San
- Fierro, J. L. G.;
Proceedings Of The 2013 Spanish Conference On Electron Devices (Cde 2013) (p. 5-8) - 1/1/2013
- ISSN 21634971
- iMarina
Towards high-k integration with III-V channels: interface optimization of high pressure sputtered gadolinium oxide on indium phospide
- San Andres, E.
- Pampillon, M. A.
- Canadilla, C.
- Feijoo, P. C.
- del Prado, A.;
Proceedings Of The 2013 Spanish Conference On Electron Devices (Cde 2013) (p. 25-28) - 1/1/2013
- ISSN 21634971
- iMarina
Optimization of Gadolinium Oxide Growth Deposited by High Pressure Sputtering through Scavenging Techniques
- PEDRO CARLOS FEIJOO GUERRO
- MARIA ANGELA PAMPILLON ARCE
- ENRIQUE SAN ANDRES SERRANO
25/6/2012
- iMarina
High pressure sputtering as a viable technique for future high k on III-V integration: Gd2O3 on InP demonstration.
- CARMINA CAÑADILLA SOTO
- PEDRO CARLOS FEIJOO GUERRO
- MARIA ANGELA PAMPILLON ARCE
- ALVARO DEL PRADO MILLAN
- ENRIQUE SAN ANDRES SERRANO
25/6/2012
- iMarina
Interface quality of Sc2O3 and Gd2O3 films based MIS structures using Al, Pt and Ti gate: effect of buffer layer and scavenging electrodes
- LUIS A BAILON VEGA
- HELENA CASTAN LANASPA
- SALVADOR DUEÑAS CARAZO
- PEDRO CARLOS FEIJOO GUERRO
- HECTOR GARCIA GARCIA
- ALFONSO GOMEZ BRAVO
- MARIA ANGELA PAMPILLON ARCE
- ENRIQUE SAN ANDRES SERRANO
25/6/2012
- iMarina
Optimization of in situ plasma oxidation of Gd metallic thin films deposited by high pressure sputtering on Si
- PEDRO CARLOS FEIJOO GUERRO
- MARIA LUISA LUCIA MULAS
- MARIA ANGELA PAMPILLON ARCE
- ENRIQUE SAN ANDRES SERRANO
25/6/2012
- iMarina
Towards metal electrode interface scavenging of rare-earth scandates: A Sc2O3 and Gd2O3 study
- ANTONIO JOSE BLAZQUEZ FERNANDEZ
- PEDRO CARLOS FEIJOO GUERRO
- MARIA LUISA LUCIA MULAS
- MARIA ANGELA PAMPILLON ARCE
- ALVARO DEL PRADO MILLAN
- ENRIQUE SAN ANDRES SERRANO
- MARIA TOLEDANO LUQUE
Microelectronic Engineering (p. 1357-1360) - 1/7/2011
10.1016/j.mee.2011.03.025 Ver en origen
- ISSN 01679317
- iMarina
- iMarina
Interface engineering by metal electrode scavenging of Gd2O 3 films sputtered on Si
- ANTONIO JOSE BLAZQUEZ FERNANDEZ
- PEDRO CARLOS FEIJOO GUERRO
- MARIA LUISA LUCIA MULAS
- MARIA ANGELA PAMPILLON ARCE
- ALVARO DEL PRADO MILLAN
- ENRIQUE SAN ANDRES SERRANO
- MARIA TOLEDANO LUQUE
Proceedings Of The 8th Spanish Conference On Electron Devices, Cde'2011 - 12/5/2011
10.1109/sced.2011.5744216 Ver en origen
- iMarina
- iMarina
Electrical and chemical characterization of high pressure sputtered scandium oxide for memory applications
- PEDRO CARLOS FEIJOO GUERRO
- JOSE LUIS GARCIA FIERRO
- MARIA LUISA LUCIA MULAS
- ALVARO DEL PRADO MILLAN
- ENRIQUE SAN ANDRES SERRANO
- MARIA TOLEDANO LUQUE
Proceedings Of The 8th Spanish Conference On Electron Devices, Cde'2011 - 12/5/2011
10.1109/sced.2011.5744185 Ver en origen
- iMarina
- iMarina
Positive bias temperature instabilities on sub-nanometere EOT FinFETs
- Feijoo PC
- Cho M
- Togo M
- San Andrés E
- Groeseneken G
Microelectronics Reliability (p. 1521-1524) - 3/10/2011
10.1016/j.microrel.2011.06.014 Ver en origen
- ISSN 00262714
- iMarina
- iMarina
Este/a investigador/a no tiene documentos de trabajo.
Este/a investigador/a no tiene informes técnicos.
Graphene-Based Disruptive Technologies (Graphene Core 3)
- David Jiménez Jiménez (Investigador principal (IP))
- FEIJOO GUERRO, PEDRO CARLOS (Investigador/a)
Ejecución: 01-04-2020 - 31-03-2023
Importe financiado: 490000,00 Euros.
- iMarina
Nuevas dinámicas de electrones y fonones para nanotecnologías emergentes: Aplicación a heteroestructuras 2D van der Waals y dispositivos de THz
- Xavier Cartoixà
- Xavier Oriols (Investigador principal (IP))
- FEIJOO GUERRO, PEDRO CARLOS (Investigador/a)
Ejecución: 01-01-2019 - 31-12-2021
Tipo: Nacional
Importe financiado: 97647,00 Euros.
- iMarina
RIS3CAT – Comunitats Emergents
- David Jiménez Jiménez (Investigador principal (IP))
- FEIJOO GUERRO, PEDRO CARLOS (Investigador/a)
Ejecución: 01-06-2018 - 30-06-2021
Importe financiado: 175000,00 Euros.
- iMarina
Graphene-Based Disruptive Technologies (Graphene Core 2)
- David Jiménez Jiménez (Investigador principal (IP))
- FEIJOO GUERRO, PEDRO CARLOS (Investigador/a)
Ejecución: 01-04-2018 - 31-03-2020
Importe financiado: 400000,00 Euros.
- iMarina
Transporte de electrones y fonones en nanodispositivos para aplicaciones de bajo y cero consumo (ELEPHONT)
- Xavier Cartoixà Soler
- Xavier Oriols Pladevall (Investigador principal (IP))
- FEIJOO GUERRO, PEDRO CARLOS (Investigador/a)
Ejecución: 01-01-2016 - 31-12-2018
Tipo: Nacional
Importe financiado: 116900,00 Euros.
- iMarina
Graphene-based disruptive technologies (Grephane Core 1)
- David Jiménez Jiménez (Investigador principal (IP))
- FEIJOO GUERRO, PEDRO CARLOS (Investigador/a)
Ejecución: 01-01-2016 - 31-12-2018
Importe financiado: 490000,00 Euros.
- iMarina
Grup de Recerca Consolidat
- Xavier Aymerich (Investigador principal (IP))
- FEIJOO GUERRO, PEDRO CARLOS (Investigador/a)
Ejecución: 01-01-2014 - 31-12-2018
Importe financiado: 30000,00 Euros.
- iMarina
Graphene-Based Revolutions in ICT And Beyond
- David Jiménez Jiménez (Investigador principal (IP))
- FEIJOO GUERRO, PEDRO CARLOS (Investigador/a)
Ejecución: 01-10-2013 - 31-12-2015
Importe financiado: 475618,00 Euros.
- iMarina
Dispositivos electrónicos de baja dimensionalidad para aplicaciones de radiofrecuencia y digitales: simulación y desarrollo de software
- Xavier Oriols (Investigador principal (IP))
- FEIJOO GUERRO, PEDRO CARLOS (Investigador/a)
Ejecución: 01-01-2013 - 31-12-2015
Tipo: Nacional
Importe financiado: 123201,00 Euros.
- iMarina
Fabricación de dispositivos de efecto campo con dieléctrico de alta permitividad sobre Si y semiconductores III-V para el nodo de 22 nm
- ENRIQUE SAN ANDRES SERRANO (Investigador principal (IP))
- FEIJOO GUERRO, PEDRO CARLOS (Investigador/a)
Ejecución: 01-01-2011 - 31-12-2013
Tipo: Nacional
Importe financiado: 213444,00 Euros.
- iMarina
Este/a investigador/a no tiene tesis dirigidas.
Este/a investigador/a no tiene patentes o licencias de software.
Grupos de investigación
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Teoría de Aproximación Constructiva y Aplicaciones
Rol: Miembro
Perfiles de investigador/a
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ORCID
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Scopus Author ID