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Feijoo Guerro, Pedro Carlos pc.feijoo@upm.es

MATEMÁTICA APLICADA A LA INGENIERÍA INDUSTRIAL / Universidad Politécnica de Madrid

Publications

Gadolinium scandate by high-pressure sputtering for future generations of high-kappa dielectrics

  • Feijoo, P. C.
  • Pampillon, M. A.
  • Andres, E. San
  • Fierro, J. L. G.;

Semiconductor Science And Technology - 1/8/2013

10.1088/0268-1242/28/8/085004 View at source

  • ISSN 13616641

Nano-laminate vs. direct deposition of high permittivity gadolinium scandate on silicon by high pressure sputtering

  • Feijoo, P. C.
  • Pampillon, M. A.
  • San Andres, E.
  • Fierro, J. L. G.;

Thin Solid Films (p. 62-66) - 30/10/2015

10.1016/j.tsf.2015.07.045 View at source

  • ISSN 00406090

Scavenging effect on plasma oxidized Gd2O3 grown by high pressure sputtering on Si and InP substrates

  • Pampillon, M. A.
  • Feijoo, P. C.
  • Andres, E. San
  • Garcia, H.
  • Castan, H.
  • Duenas, S.;

Semiconductor Science And Technology - 1/3/2015

10.1088/0268-1242/30/3/035023 View at source

  • ISSN 13616641

Short channel effects in graphene-based field effect transistors targeting radio-frequency applications

  • Feijoo PC
  • Jiménez D
  • Cartoixà X

2d Materials - 1/1/2016

10.1088/2053-1583/3/2/025036 View at source

  • ISSN 20531583

Scaling of graphene field-effect transistors supported on hexagonal boron nitride: Radio-frequency stability as a limiting factor

  • Feijoo P
  • Pasadas F
  • Iglesias J
  • Martin M
  • Rengel R
  • Li C
  • Kim W
  • Riikonen J
  • Lipsanen H
  • Jiménez D
... View more Collapse

Nanotechnology - 6/11/2017

10.1088/1361-6528/aa9094 View at source

  • ISSN 09574484

High-k gadolinium scandate on Si obtained by high pressure sputtering from metal targets and in-situ plasma oxidation

  • Pampillón MA
  • San Andrés E
  • Feijoo PC
  • Fierro JLG

Semiconductor Science And Technology - 10/2/2017

10.1088/1361-6641/aa58cc View at source

  • ISSN 13616641

Radio frequency performance projection and stability tradeoff of h-BN encapsulated graphene field-effect transistors

  • Feijoo PC
  • Pasadas F
  • Iglesias JM
  • Hamham EM
  • Rengel R
  • Jiménez D

Ieee Transactions On Electron Devices (p. 1567-1573) - 1/3/2019

10.1109/ted.2018.2890192 View at source

  • ISSN 00189383

Contact resistance extraction of graphene FET technologies based on individual device characterization

  • Pacheco-Sanchez A
  • Feijoo PC
  • Jiménez D

Solid-State Electronics - 1/10/2020

10.1016/j.sse.2020.107882 View at source

  • ISSN 00381101

Experimental Observation and Modeling of the Impact of Traps on Static and Analog/HF Performance of Graphene Transistors

  • Pacheco-Sanchez A
  • Mavredakis N
  • Feijoo PC
  • Wei W
  • Pallecchi E
  • Happy H
  • Jimenez D
... View more Collapse

Ieee Transactions On Electron Devices (p. 5790-5796) - 1/12/2020

10.1109/ted.2020.3029542 View at source

  • ISSN 00189383

2D pn junctions driven out-of-equilibrium

  • Chaves FA
  • Feijoo PC
  • Jiménez D

Nanoscale Advances (p. 3252-3262) - 1/8/2020

10.1039/d0na00267d View at source

  • ISSN 25160230

This researcher has no books.

This researcher has no book chapters.

Growth of silicon nitride on silicon by electron cyclotron resonance plasma nitridation

  • PEDRO CARLOS FEIJOO GUERRO
  • MARIA LUISA LUCIA MULAS
  • ALVARO DEL PRADO MILLAN
  • ENRIQUE SAN ANDRES SERRANO
  • MARIA TOLEDANO LUQUE

Proceedings Of The 2009 Spanish Conference On Electron Devices, Cde'09 (p. 16-18) - 24/4/2009

10.1109/sced.2009.4800418 View at source

Interfacial properties of HfO2/SiN/Si gate structures

  • AITZANE AMEZAGA
  • PEDRO CARLOS FEIJOO GUERRO
  • MARIA LUISA LUCIA MULAS
  • ALVARO DEL PRADO MILLAN
  • ENRIQUE SAN ANDRES SERRANO
  • MARIA TOLEDANO LUQUE

Proceedings Of The 2009 Spanish Conference On Electron Devices, Cde'09 (p. 23-26) - 24/4/2009

10.1109/sced.2009.4800420 View at source

Electrical characterization of high-pressure reactive sputtered Sc 2O3 films on silicon

  • Castán H
  • Dueñas S
  • Gómez A
  • García H
  • Bailón L
  • Feijoo PC
  • Toledano-Luque M
  • Del Prado A
  • San Andrés E
  • Lucía ML
... View more Collapse

Ecs Transactions (p. 287-297) - 1/1/2010

10.1149/1.3375614 View at source

  • ISSN 19386737

Growth of Gadolinium Oxide by Thermal Oxidation of Thin Metallic Gadolinium Layers

  • PEDRO CARLOS FEIJOO GUERRO
  • MARIA LUISA LUCIA MULAS
  • MARIA ANGELA PAMPILLON ARCE
  • ALVARO DEL PRADO MILLAN
  • ENRIQUE SAN ANDRES SERRANO
  • MARIA TOLEDANO LUQUE

17/3/2010

  • iMarina

Positive bias temperature instabilities on sub-nanometere EOT FinFETs

  • Feijoo PC
  • Cho M
  • Togo M
  • San Andrés E
  • Groeseneken G

Microelectronics Reliability (p. 1521-1524) - 3/10/2011

10.1016/j.microrel.2011.06.014 View at source

  • ISSN 00262714

Interface engineering by metal electrode scavenging of Gd2O 3 films sputtered on Si

  • ANTONIO JOSE BLAZQUEZ FERNANDEZ
  • PEDRO CARLOS FEIJOO GUERRO
  • MARIA LUISA LUCIA MULAS
  • MARIA ANGELA PAMPILLON ARCE
  • ALVARO DEL PRADO MILLAN
  • ENRIQUE SAN ANDRES SERRANO
  • MARIA TOLEDANO LUQUE
... View more Collapse

Proceedings Of The 8th Spanish Conference On Electron Devices, Cde'2011 - 12/5/2011

10.1109/sced.2011.5744216 View at source

Electrical and chemical characterization of high pressure sputtered scandium oxide for memory applications

  • PEDRO CARLOS FEIJOO GUERRO
  • JOSE LUIS GARCIA FIERRO
  • MARIA LUISA LUCIA MULAS
  • ALVARO DEL PRADO MILLAN
  • ENRIQUE SAN ANDRES SERRANO
  • MARIA TOLEDANO LUQUE

Proceedings Of The 8th Spanish Conference On Electron Devices, Cde'2011 - 12/5/2011

10.1109/sced.2011.5744185 View at source

Towards metal electrode interface scavenging of rare-earth scandates: A Sc2O3 and Gd2O3 study

  • ANTONIO JOSE BLAZQUEZ FERNANDEZ
  • PEDRO CARLOS FEIJOO GUERRO
  • MARIA LUISA LUCIA MULAS
  • MARIA ANGELA PAMPILLON ARCE
  • ALVARO DEL PRADO MILLAN
  • ENRIQUE SAN ANDRES SERRANO
  • MARIA TOLEDANO LUQUE
... View more Collapse

Microelectronic Engineering (p. 1357-1360) - 1/7/2011

10.1016/j.mee.2011.03.025 View at source

  • ISSN 01679317

Optimization of Gadolinium Oxide Growth Deposited by High Pressure Sputtering through Scavenging Techniques

  • PEDRO CARLOS FEIJOO GUERRO
  • MARIA ANGELA PAMPILLON ARCE
  • ENRIQUE SAN ANDRES SERRANO

25/6/2012

  • iMarina

High pressure sputtering as a viable technique for future high k on III-V integration: Gd2O3 on InP demonstration.

  • CARMINA CAÑADILLA SOTO
  • PEDRO CARLOS FEIJOO GUERRO
  • MARIA ANGELA PAMPILLON ARCE
  • ALVARO DEL PRADO MILLAN
  • ENRIQUE SAN ANDRES SERRANO

25/6/2012

  • iMarina

This researcher has no working papers.

This researcher has no technical reports.

Nueva generación de dieléctricos de alta permitividad para su aplicación en la puerta de transistores de utilidad en radiofrecuencia

  • Ignacio Mártil de la Plaza (Investigador principal (IP))
  • FEIJOO GUERRO, PEDRO CARLOS (Investigador/a)

Period: 01-01-2007 - 31-12-2010

  • iMarina

Medida a temperatura variable de estructuras de puerta de transistores con dieléctricos de alta permitividad

  • Germán González Díaz (Investigador principal (IP))
  • FEIJOO GUERRO, PEDRO CARLOS (Investigador/a)

Period: 01-01-2008 - 31-12-2008

  • iMarina

Fabricación de dispositivos de efecto campo con dieléctrico de alta permitividad sobre Si y semiconductores III-V para el nodo de 22 nm

  • ENRIQUE SAN ANDRES SERRANO (Investigador principal (IP))
  • FEIJOO GUERRO, PEDRO CARLOS (Investigador/a)

Period: 01-01-2011 - 31-12-2013

Type of funding: National

Amount of funding: 213444,00 Euros.

  • iMarina

Dispositivos electrónicos de baja dimensionalidad para aplicaciones de radiofrecuencia y digitales: simulación y desarrollo de software

  • Xavier Oriols (Investigador principal (IP))
  • FEIJOO GUERRO, PEDRO CARLOS (Investigador/a)

Period: 01-01-2013 - 31-12-2015

Type of funding: National

Amount of funding: 123201,00 Euros.

  • iMarina

Graphene-Based Revolutions in ICT And Beyond

  • David Jiménez Jiménez (Investigador principal (IP))
  • FEIJOO GUERRO, PEDRO CARLOS (Investigador/a)

Period: 01-10-2013 - 31-12-2015

Amount of funding: 475618,00 Euros.

  • iMarina

Grup de Recerca Consolidat

  • Xavier Aymerich (Investigador principal (IP))
  • FEIJOO GUERRO, PEDRO CARLOS (Investigador/a)

Period: 01-01-2014 - 31-12-2018

Amount of funding: 30000,00 Euros.

  • iMarina

Transporte de electrones y fonones en nanodispositivos para aplicaciones de bajo y cero consumo (ELEPHONT)

  • Xavier Cartoixà Soler
  • Xavier Oriols Pladevall (Investigador principal (IP))
  • FEIJOO GUERRO, PEDRO CARLOS (Investigador/a)

Period: 01-01-2016 - 31-12-2018

Type of funding: National

Amount of funding: 116900,00 Euros.

  • iMarina

Graphene-based disruptive technologies (Grephane Core 1)

  • David Jiménez Jiménez (Investigador principal (IP))
  • FEIJOO GUERRO, PEDRO CARLOS (Investigador/a)

Period: 01-01-2016 - 31-12-2018

Amount of funding: 490000,00 Euros.

  • iMarina

Graphene-Based Disruptive Technologies (Graphene Core 2)

  • David Jiménez Jiménez (Investigador principal (IP))
  • FEIJOO GUERRO, PEDRO CARLOS (Investigador/a)

Period: 01-04-2018 - 31-03-2020

Amount of funding: 400000,00 Euros.

  • iMarina

RIS3CAT – Comunitats Emergents

  • David Jiménez Jiménez (Investigador principal (IP))
  • FEIJOO GUERRO, PEDRO CARLOS (Investigador/a)

Period: 01-06-2018 - 30-06-2021

Amount of funding: 175000,00 Euros.

  • iMarina

This researcher has no supervised thesis.

This researcher has no patents or software licenses.

Last data update: 3/5/24 7:21 PM