Ulloa Herrero, Jose Maria josem.ulloa@upm.es
Actividades
- Artículos 113
- Libros 0
- Capítulos de libro 2
- Congresos 130
- Documentos de trabajo 0
- Informes técnicos 0
- Proyectos de investigación 13
- Tesis dirigidas 3
- Patentes o licencias de software 0
Strong Influence of the Humidity on the Electrical Properties of InGaAs Surface Quantum Dots
- Milla, MJ
- Ulloa, JM
- Guzmán, A
Acs Applied Materials & Interfaces (p. 6191-6195) - 14/5/2014
10.1021/am5010442 Ver en origen
- ISSN 19448244
Interfacial Embedding of Laser-Manufactured Fluorinated Gold Clusters Enabling Stable Perovskite Solar Cells with Efficiency Over 24%
- Guo, Pengfei
- Zhu, Hongfu
- Zhao, Wenhao
- Liu, Chen
- Zhu, Liguo
- Ye, Qian
- Jia, Ning
- Wang, Hongyue
- Zhang, Xiuhai
- Huang, Wanxia
- Vinokurov, Vladimir A.
- Ivanov, Evgenii
- Shchukin, Dmitry
- Harvey, Daniel
- Ulloa, Jose Maria
- Hierro, Adrian
- Wang, Hongqiang;
Advanced Materials - 1/1/2021
10.1002/adma.202101590 Ver en origen
- ISSN 09359648
Dependence of Surface InGaAs Quantum Dot Luminescence on the Molecular Properties of the Environment
- Milla, MJ
- Ulloa, JM
- Guzmán, A
Applied Physics Express - 1/9/2013
10.7567/apex.6.092002 Ver en origen
- ISSN 18820778
Impact of the Sb content on the performance of GaAsSb-capped InAs/GaAs quantum dot lasers
- Utrilla, AD
- Ulloa, JM
- Guzman, A
- Hierro, A
Applied Physics Letters - 9/9/2013
10.1063/1.4821071 Ver en origen
- ISSN 00036951
Optical properties and microstructure of 2.02-3.30 eV ZnCdO nanowires: Effect of thermal annealing
- Lopez-Ponce, M
- Hierro, A
- Ulloa, JM
- Lefebvre, P
- Muñoz, E
- Agouram, S
- Muñoz-Sanjosé, V
- Yamamoto, K
- Nakamura, A
- Temmyo, J
Applied Physics Letters - 8/4/2013
10.1063/1.4799491 Ver en origen
- ISSN 00036951
Role of the wetting layer in the enhanced responsivity of InAs/GaAsSb quantum dot infrared photodetectors
- Guzmán, A
- Yamamoto, K
- Ulloa, JM
- Llorens, JM
- Hierro, A
Applied Physics Letters - 6/7/2015
10.1063/1.4926364 Ver en origen
- ISSN 00036951
GaAsSb/GaAsN short-period superlattices as a capping layer for improved InAs quantum dot-based optoelectronics
Applied Physics Letters - 28/7/2014
10.1063/1.4891557 Ver en origen
- ISSN 00036951
Type II InAs/GaAsSb quantum dots: Highly tunable exciton geometry and topology
- Llorens, JM
- Wewior, L
- de Oliveira, ERC
- Ulloa, JM
- Utrilla, AD
- Guzmán, A
- Hierro, A
- Alén, B
Applied Physics Letters - 2/11/2015
10.1063/1.4934841 Ver en origen
- ISSN 00036951
High optical sensitivity to ambient conditions of uncapped InGaAs surface quantum dots
- Milla, MJ
- Ulloa, JM
- Guzmán, A
Applied Physics Letters - 26/3/2012
10.1063/1.3697992 Ver en origen
- ISSN 00036951
Inhibition of In desorption in diluted nitride InAsN quantum dots
- Reyes, DF
- González, D
- Sales, DL
- Gargallo-Caballero, R
- Guzmán, A
- Ulloa, JM
- Hierro, A
Applied Physics Letters - 14/2/2011
10.1063/1.3554386 Ver en origen
- ISSN 00036951
Este/a investigador/a no tiene libros.
InAs Quantum Dot Formation Studied at the Atomic Scale by Cross-sectional Scanning Tunnelling Microscopy
- Ulloa, J. M.
- Offermans, P.
- Koenraad, P. M.;
Handbook Of Self Assembled Semiconductor Nanostructures For Novel Devices In Photonics And Electronics (p. 165-200) - 1/1/2008
From Dot to Ring: Tunable Exciton Topology in Type-II InAs/GaAsSb Quantum Dots
- Llorens J
- Lopes-Oliveira V
- López-Richard V
- Ulloa J
- Alén B
Nanoscience And Technology (p. 57-88) - 1/1/2018
10.1007/978-3-319-95159-1_3 Ver en origen
- ISSN 14344904
J.M. ULLOA, M. DEL MORAL, R. GARGALLO, M. MONTES, A. GUZMAN, A. HIERRO, M. BOZKURT, P.M. KOENRAAD "1.3- 1.5 nm GaAsSb-capped InAs quantum dots: effect of the Sb content on the structural and optical properties" Spring European Materials Research Society
- ULLOA HERRERO, JOSE MARIA
- FERNANDEZ GONZALEZ, ALVARO DE GUZMAN
- MONTES BAJO, MIGUEL
- HIERRO CANO, ADRIAN
"1.3- 1.5 ¿M Gaassb-Capped Inas Quantum Dots: Effect Of The Sb Content On The Structural And Optical Properties" (p. 0-0) - 8/6/2009
- iMarina
M. MONTES, A. HIERRO, J. M. ULLOA, A. GUZMÁN, M. AL KHALFIOUI, M. HUGUES, B. DAMILANO, J. MASSIES "1.3-1.5 µm emitting InAs quantum dot LEDs with (Ga, In)(N,As) and Ga(As,Sb) capping layers: a comparison" Spring European Materials Research Society Confe
- ULLOA HERRERO, JOSE MARIA
- FERNANDEZ GONZALEZ, ALVARO DE GUZMAN
- MONTES BAJO, MIGUEL
- HIERRO CANO, ADRIAN
"1.3-1.5 µM Emitting Inas Quantum Dot Leds With (Ga, In)(N,As) And Ga(As,Sb) Capping Layers: A Comparison" (p. 0-0) - 14/9/2009
- iMarina
A. HIERRO, G. TABARES, J.M. ULLOA, E. MUÑOZ, A. NAKAMURA, T. HAYASHI, J. TEMMYO "Carrier compensation by deep levels in a-plane MgxZn1-xO Schottky photodiodes grown by RPE-MOCVD" Spring European Materials Research Society Conference 2009 Strasburg (Fra
- ULLOA HERRERO, JOSE MARIA
- HIERRO CANO, ADRIAN
- Muñoz Merino, Elías
"Carrier Compensation By Deep Levels In A-Plane Mgxzn1-Xo Schottky Photodiodes Grown By Rpe-Mocvd" (p. 0-0) - 14/9/2009
- iMarina
J.M. ULLOA, M. DEL MORAL, R. GARGALLO, M. MONTES, A. GUZMAN, A. HIERRO, M. BOZKURT, P.M. KOENRAAD "1.3- 1.5 µm GaAsSb-capped InAs quantum dots: effect of the Sb content on the structural and optical properties" 15th European Molacular Beam Epitaxy Works
- ULLOA HERRERO, JOSE MARIA
- FERNANDEZ GONZALEZ, ALVARO DE GUZMAN
- MONTES BAJO, MIGUEL
- HIERRO CANO, ADRIAN
"Effect Of A Lattice-Matched Gaassb Capping Layer On The Structural Properties Of Inas/Ingaas/Inp Quantum Dots" (p. 0-0) - 8/3/2009
- iMarina
J.M. ULLOA , P.M. KOENRAAD, M. BONNET-EYMARD, A. LÉTOUBLON, D N. BERTRU "Effect of a lattice-matched GaAsSb capping layer on the structural properties of InAs/InGaAs/InP quantum dots" 15th European Molacular Beam Epitaxy Workshop Zakopane (Poland), 200
- ULLOA HERRERO, JOSE MARIA
"Effect Of A Lattice-Matched Gaassb Capping Layer On The Structural Properties Of Inas/Ingaas/Inp Quantum Dots" (p. 0-0) - 8/3/2009
- iMarina
D.F. REYES, D.L. SALES, R. GARGALLO-CABALLERO, J.M.ULLOA, A. HIERRO, A. GUZMÁN, D. GONZÁLEZ. "Effects of the nitrogen incorporation in the optical and structural characteristics of nitrogen-dilute InAsN QDs" European Materials Research Society Spring Meet
- D.L. SALES
- D.F. REYES
- D. GONZÁLEZ
- ULLOA HERRERO, JOSE MARIA
- FERNANDEZ GONZALEZ, ALVARO DE GUZMAN
- HIERRO CANO, ADRIAN
"Effects Of The Nitrogen Incorporation In The Optical And Structural Characteristics Of Nitrogen-Dilute Inasn Qds" (p. 0-0) - 8/6/2010
- iMarina
A. HIERRO, G. TABARES, J.M. ULLOA, E. MUÑOZ, A. NAKAMURA, T. HAYASHI, J. TEMMYO "Impact of acceptor states in MgxZn1-xO Schottky photodiodes" Internacional Conference on II-VI Compounds, Saint Petersburg (Russia), 2009
- ULLOA HERRERO, JOSE MARIA
- HIERRO CANO, ADRIAN
- Muñoz Merino, Elías
"Impact Of Acceptor States In Mgxzn1-Xo Schottky Photodiodes" (p. 0-0) - 24/8/2009
- iMarina
M. MONTES, A. HIERRO, J. M. ULLOA, M. AL KHALFIOUI, M. HUGUES, B. DAMILANO, J. MASSIES "InAs/(Ga,In)(N,As) Quantum Dot LEDs Emitting at 1.3-1.5 ìm" 7th Spanish Conference on Electron Devices 2009 Santiago Compostela (Spain), 2009
- ULLOA HERRERO, JOSE MARIA
- MONTES BAJO, MIGUEL
- HIERRO CANO, ADRIAN
"Inas/(Ga,In)(N,As) Quantum Dot Leds Emitting At 1.3-1.5 Ìm" 7th Spanish Conference On Electron Devices 2009 santiago Compostela (Spain), 2009 (p. 0-0) - 11/2/2009
- iMarina
A.GUZMÁN FERNÁNDEZ, R. GARGALLO-CABLLERO, MJ. MILLA, JM. ULLOA, A. HIERRO "Low optical degradation in InGaAsN/GaAs Quantum Dot p-i-n structures emitting from 1.1 to 1.55 µm" 16th International MBE Conference Berlín (German), 2010
- ULLOA HERRERO, JOSE MARIA
- FERNANDEZ GONZALEZ, ALVARO DE GUZMAN
- HIERRO CANO, ADRIAN
"Low Optical Degradation In Ingaasn/Gaas Quantum Dot P-I-N Structures Emitting From 1.1 To 1.55 µM" (p. 0-0) - 22/8/2010
- iMarina
R. GARGALLO-CABALLERO, A. GUZMÁN, M. HOPKINSON, A. HIERRO, J. M. ULLOA, E. CALLEJA "Optoelectronic devices based on (Ga,In)(As,N) Quantum dots" 15th European Molacular Beam Epitaxy Workshop Zakopane (Poland), 2009
- ULLOA HERRERO, JOSE MARIA
- HIERRO CANO, ADRIAN
- Calleja Pardo, Enrique
"Optoelectronic Devices Based On (Ga,In)(As,N) Quantum Dots" (p. 0-0) - 2/8/2009
- iMarina
Este/a investigador/a no tiene documentos de trabajo.
Este/a investigador/a no tiene informes técnicos.
Emerging diluted III-V-nitrides and related engineered nanostructures for high efficient photovoltaic and photodetection applications
- Jose María Ulloa (Investigador principal (IP))
- CATALAN GOMEZ, SERGIO (Titulado/a universitario/a en formación)
Ejecución: 01-01-2014 - 31-12-2016
- iMarina
Nueva Generación de emisores de Fotones Individuales para Telecomunicaciones
- FERNANDEZ GARRIDO, SERGIO (Investigador principal (IP))
- Gacevic, Zarko (Participante)
- ULLOA HERRERO, JOSE MARIA (Investigador principal (IP))
- FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Participante)
- GALLEGO CARRO, ALEJANDRO (Miembro del equipo de trabajo)
- ABUIN HERRAEZ, MANUEL (Miembro del equipo de trabajo)
- SCHWARZ, MALTE DANIEL (Miembro del equipo de trabajo)
Ejecución: 01-09-2023 - 31-08-2026
Tipo: Nacional
- iMarina
PRTR. Comunicaciones cuánticas
- PEDROS AYALA, JORGE (Participante)
- HIERRO CANO, ADRIAN (Participante)
- BOSCA MOJENA, ALBERTO (Participante)
- FERNANDEZ GARRIDO, SERGIO (Participante)
- ULLOA HERRERO, JOSE MARIA (Participante)
- Calle Gómez, Fernando (Participante)
- GALLEGO CARRO, ALEJANDRO (Participante)
- STANOJEVIC, LAZAR (Participante)
- FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Participante)
- FABA GARCIA, JAVIER (Participante)
- Martin Ayuso, Vicente (Investigador principal (IP))
- Gacevic, Zarko (Investigador principal (IP))
- BRITO MENDEZ, RUBEN DAVID (Participante)
- VICENTE GARCIA, RAFAEL JUAN (Participante)
- SEBASTIAN LOMBRAÑA, ALBERTO JUAN (Participante)
- ROSALES BEJARANO, JOSE LUIS (Participante)
- SAEZ DE BURUAGA BROUNS, JAIME (Participante)
- GARCIA-ARISCO RIVERA, JESUS (Participante)
- OBRADOVIC, JOVANA (Participante)
Ejecución: 01-01-2022 - 31-12-2024
Tipo: Regional
- iMarina
Propiedades ópticas y estructurales de nanoestructuras de Zn(Cd)(Mg)O
- HIERRO CANO, ADRIAN (Director)
- ULLOA HERRERO, JOSE MARIA (Director) Doctorando: López Ponce, Manuel
1/1/2015
- iMarina
Structures based on GaAs(Sb)(N) semiconductor alloys for high efficiency multi-junction solar cells
- ULLOA HERRERO, JOSE MARIA (Director) Doctorando: Gonzalo Martín, Alicia
1/1/2019
- iMarina
Este/a investigador/a no tiene patentes o licencias de software.
Grupos de investigación
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Grupo de Dispositivos Semiconductores del ISOM
Rol: Miembro
Perfiles de investigador/a
-
ORCID