Sanz Hervas, Alfredo alfredo.sanz@upm.es
Actividades
- Artículos 42
- Libros 1
- Capítulos de libro 0
- Congresos 19
- Documentos de trabajo 0
- Informes técnicos 0
- Proyectos de investigación 2
- Tesis dirigidas 2
- Patentes o licencias de software 2
High quality GaAs/AlGaAs quantum wells grown on (111)A substrates by metalorganic vapor phase epitaxy
- Mao E
- Dickey S
- Majerfeld A
- Sanz-Hervás A
- Kim B
Microelectronics Journal (p. 727-734) - 1/1/1997
10.1016/s0026-2692(96)00110-3 Ver en origen
- ISSN 00262692
High-resolution X-ray diffraction study of AlAs/Al0.5Ga0.5As/GaAs quantum well structures grown by molecular beam epitaxy on (11 n)A GaAs
Journal Of Crystal Growth (p. 214-220) - 1/6/2000
10.1016/s0022-0248(00)00368-7 Ver en origen
- ISSN 00220248
High-resolution x-ray diffraction study of piezoelectric InGaAs/GaAs multiquantum well p-i-n photodiodes grown on (111)B GaAs
- Sanzhervas, A
- Aguilar, M
- Sanchezrojas, JL
- Sacedon, A
- Calleja, E
- Munoz, E
- Abril, EJ
- Lopez, M
Applied Physics Letters (p. 1574-1576) - 9/9/1996
10.1063/1.117034 Ver en origen
- ISSN 00036951
Influence of crystal properties on the absorption IR spectra of polycrystalline AlN thin films
- Sanz-Hervás, A
- Iborra, E
- Clement, M
- Sangrador, J
- Aguilar, M
Diamond And Related Materials (p. 1186-1189) - 1/3/2003
10.1016/s0925-9635(02)00228-5 Ver en origen
- ISSN 09259635
Influence of sputtering mechanisms on the preferred orientation of aluminum nitride thin films
- Clement, M
- Iborra, E
- Sangrador, J
- Sanz-Hervás, A
- Vergara, L
- Aguilar, M
Journal Of Applied Physics (p. 1495-1500) - 1/8/2003
10.1063/1.1587267 Ver en origen
- ISSN 00218979
Influence of strain compensation on structural and electrical properties of InAlAs/InGaAs HEMT structures grown on InP
- Letartre, X
- Rojo-Romeo, P
- Tardy, J
- Bejar, M
- Gendry, M
- Py, MA
- Beck, M
- Buhlmann, HJ
- Ren, L
- Villar, C
- Sanz-Hervas, A
- Serrano, JJ
- Blanco, JM
- Aguilar, M
Japanese Journal Of Applied Physics (p. 1169-1173) - 1/1/1999
10.1143/jjap.38.1169 Ver en origen
- ISSN 00214922
Influence of the Ge coverage prior to carbonization on the structure of SiC grown on Si(111)
- Morales, FM
- Zgheib, C
- Molina, SI
- Araujo, D
- Garcia, R
- Fernandez, C
- Sanz-Hervas, A
- Masri, P
- Weih, P
- Stauden, T
- Ambacher, O
- Pezoldt, J;
Materials Science Forum (p. 297-300) - 1/1/2004
10.4028/www.scientific.net/msf.457-460.297 Ver en origen
- ISSN 02555476
Interfacial properties of (111)A GaAs/AlGaAs multiquantum-well structures grown by metalorganic vapor phase epitaxy
- Sanz-Hervás A
- Cho S
- Majerfeld A
- Kim B
Applied Physics Letters (p. 3073-3075) - 22/5/2000
10.1063/1.126583 Ver en origen
- ISSN 00036951
Interfacial properties of strained piezoelectric InGaAs/GaAs quantum wells grown by metalorganic vapor phase epitaxy on (111)A GaAs
- Cho S
- Sanz-Hervás A
- Kim J
- Majerfeld A
- Kim B
Journal Of Applied Physics (p. 1909-1913) - 15/8/2004
10.1063/1.1765862 Ver en origen
- ISSN 00218979
MOVPE growth and properties of P-I-N InGaAs/GaAs strained multi-quantum well structures on (1 1 1)A GaAs substrates
- Kim J
- Cho S
- Sanz-Hervás A
- Majerfeld A
- Kim B
Journal Of Crystal Growth (p. 525-529) - 1/1/2000
10.1016/s0022-0248(00)00763-6 Ver en origen
- ISSN 00220248
Este/a investigador/a no tiene capítulos de libro.
A model for the accurate determination of the electromechanical coupling factor of thin film SAW devices on non-insulating substrates
- Iborra, E
- Vergara, L
- Sangrador, J
- Clement, M
- Sanz-Hervas, A
- Olivares, J
Proceedings Of The Ieee Ultrasonics Symposium (p. 1880-1883) - 1/12/2004
10.1109/ultsym.2004.1418197 Ver en origen
- ISSN 10510117
AlN-on-Si SAW filters: Influence of film thickness, IDT geometry and substrate conductivity
- Clement, M
- Vergara, L
- Iborra, E
- Sanz-Hervás, A
- Olivares, J
- Sangrador, J
Proceedings Of The Ieee Ultrasonics Symposium (p. 1900-1904) - 1/12/2005
10.1109/ultsym.2005.1603244 Ver en origen
- ISSN 10510117
Assessment of the piezoelectric response of sputtered AlN films by X-ray diffraction
- Iborra, E
- Sanz-Hervas, A
- Clement, M
- Vergara, L
- Olivares, J
- Sangrador, J
Proceedings Of The Ieee Ultrasonics Symposium (p. 1808-1811) - 1/12/2005
10.1109/ultsym.2005.1603219 Ver en origen
- ISSN 10510117
Characterization of piezoelectric and pyroelectric properties of MOVPE-grown strained (111)A InGaAs/GaAs QW structures by modulation spectroscopy
- Cho S
- Kim J
- Sanz-Hervás A
- Majerfeld A
- Patriarche G
- Kim B
Physica Status Solidi A-Applications And Materials Science (p. 260-264) - 1/1/2003
10.1002/pssa.200306269 Ver en origen
- ISSN 00318965
Comparative study of c-axis AlN films sputtered on metallic surfaces
- Sanz-Hervás A
- Vergara L
- Olivares J
- Iborra E
- Morilla Y
- García-López J
- Clement M
- Sangrador J
- Respaldiza M
Diamond And Related Materials (p. 1198-1202) - 1/1/2005
10.1016/j.diamond.2004.11.010 Ver en origen
- ISSN 09259635
Design and characterization of two color GaAs based quantum well infrared detector structures
- Sanchez-Rojas J
- Guzman A
- Munoz E
- Sanchez J
- Calleja E
- Sanz-Hervas A
- Villar C
- Aguilar M
- Montojo M
- Vergara G
- Gomez L
Advanced Workshop On Frontiers In Electronics, Proceedings, Wofe (p. 65-71) - 1/1/1997
- iMarina
Fast Evaluation of Piezoelectric Aluminum Nitride Films by Infrared Optical Techniques
- Clement, M
- Iborra, E
- Olivares, J
- González-Castilla, S
- Sanz-Hervás, A
- Vergara, L
- Sangrador, J
Proceedings Of The Ieee Ultrasonics Symposium (p. 2297-2300) - 1/12/2006
10.1109/ultsym.2006.578 Ver en origen
- ISSN 10510117
Ge and GeOx films as sacrificial layer for MEMS technology based on piezoelectric AIN: Etching and planarization processes
- Sangrador, J
- Olivares, J
- Iborra, E
- Vergara, L
- Clement, M
- Sanz-Hervás, A
Proceedings Of Spie - The International Society For Optical Engineering (p. 1-15) - 9/12/2005
10.1117/12.608244 Ver en origen
- ISSN 0277786X
High energy ion characterization of sputtered AlN thin films
- García-López, J
- Morilla, Y
- Respaldiza, MA
- Clement, M
- Iborra, E
- Sanz-Hervas, A
- Sangrador, J
Diamond And Related Materials (p. 1157-1161) - 1/1/2003
10.1016/s0925-9635(02)00306-0 Ver en origen
- ISSN 09259635
Influence of oxygen and argon on the crystal quality and piezoelectric response of AlN sputtered thin films
- Vergara, L
- Clement, M
- Iborra, E
- Sanz-Hervás, A
- García-López, J
- Morilla, Y
- Sangrador, J
- Respaldiza, MA
Diamond And Related Materials (p. 839-842) - 1/4/2004
10.1016/j.diamond.2003.10.063 Ver en origen
- ISSN 09259635
Este/a investigador/a no tiene documentos de trabajo.
Este/a investigador/a no tiene informes técnicos.
Diseño electrónico avanzado: Consumo, temperatura y altas prestaciones
- ECHEVERRIA ARAMENDI, PEDRO (Participante)
- GARCIA REDONDO, FERNANDO (Miembro del equipo de trabajo)
- SANZ HERVAS, ALFREDO (Participante)
- ITUERO HERRERO, PABLO (Participante)
- LOPEZ BARRIO, CARLOS ALBERTO (Participante)
- LOPEZ VALLEJO, M. LUISA (Investigador principal (IP))
Ejecución: 01-01-2010 - 31-12-2012
Tipo: Nacional
Importe financiado: 75503,80 Euros.
- iMarina
PhD Programme in Biomedical Engineering and Health Systems
- Serrano Olmedo, José Javier (Investigador principal (IP))
- SANZ HERVAS, ALFREDO (Participante)
Ejecución: 01-01-2019 - 31-12-2020
Tipo: Internacional
Importe financiado: 15093,75 Euros.
- iMarina
Análisis y diseño de un patrón de ruido térmico de 10 MHz a 26,5 GHz en tecnología coaxial
- DIAZ MORCILLO, Alejandro (Director)
- SANZ HERVAS, ALFREDO (Director) Doctorando: Fornet Ruiz, Jaime Jose
1/1/2013
- iMarina
PREAMPLIFICADOR DE ESTADO SOLIDO DE SEÑALES DE AUDIO GENERADAS POR INSTRUMENTOS MUSICALES
- RODRIGO GARCIA, JORGE (Inventores/autores/obtentores)
- SANZ HERVAS,ALFREDO (Inventores/autores/obtentores)
2/12/2008
- iMarina
PROCEDIMIENTO DE AMPLIFICACION DE SEÑALES DE AUDIO GENERADAS POR INSTRUMENTOS MUSICALES PARA PREAMPLIFICADORES DE ESTADO SOLIDO.
- RODRIGO GARCIA, JORGE (Inventores/autores/obtentores)
- SANZ HERVAS,ALFREDO (Inventores/autores/obtentores)
2/12/2008
- iMarina
Perfiles de investigador/a
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ORCID
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Scopus Author ID