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Author profile at the institutional portal

Fernandez Gonzalez, Alvaro De Guzman alvarodeguzman.fernandez@upm.es

INGENIERÍA ELECTRÓNICA / Universidad Politécnica de Madrid

Publications

Strong Influence of the Humidity on the Electrical Properties of InGaAs Surface Quantum Dots

  • Milla, MJ
  • Ulloa, JM
  • Guzmán, A

Acs Applied Materials & Interfaces (p. 6191-6195) - 14/5/2014

10.1021/am5010442 View at source

  • ISSN 19448244

Dependence of Surface InGaAs Quantum Dot Luminescence on the Molecular Properties of the Environment

  • Milla, MJ
  • Ulloa, JM
  • Guzmán, A

Applied Physics Express - 1/9/2013

10.7567/apex.6.092002 View at source

  • ISSN 18820778

Dominant carrier recombination mechanisms in GaInNAs/GaAs quantum well light-emitting diodes

  • Ulloa, JM
  • Hierro, A
  • Miguel-Sánchez, J
  • Guzmán, A
  • Tournié, E
  • Sánchez-Rojas, JL
  • Calleja, E
... View more Collapse

Applied Physics Letters (p. 40-42) - 5/7/2004

10.1063/1.1769078 View at source

  • ISSN 00036951

GaAsSb/GaAsN short-period superlattices as a capping layer for improved InAs quantum dot-based optoelectronics

  • Utrilla, AD
  • Reyes, DF
  • Ulloa, JM
  • González, D
  • Ben, T
  • Guzman, A
  • Hierro, A
... View more Collapse

Applied Physics Letters - 28/7/2014

10.1063/1.4891557 View at source

  • ISSN 00036951

Type II InAs/GaAsSb quantum dots: Highly tunable exciton geometry and topology

  • Llorens, JM
  • Wewior, L
  • de Oliveira, ERC
  • Ulloa, JM
  • Utrilla, AD
  • Guzmán, A
  • Hierro, A
  • Alén, B
... View more Collapse

Applied Physics Letters - 2/11/2015

10.1063/1.4934841 View at source

  • ISSN 00036951

Impact of the Sb content on the performance of GaAsSb-capped InAs/GaAs quantum dot lasers

  • Utrilla, AD
  • Ulloa, JM
  • Guzman, A
  • Hierro, A

Applied Physics Letters - 9/9/2013

10.1063/1.4821071 View at source

  • ISSN 00036951

High responsivity and internal gain mechanisms in Au-ZnMgO Schottky photodiodes

  • Tabares, G
  • Hierro, A
  • Ulloa, JM
  • Guzman, A
  • Muñoz, E
  • Nakamura, A
  • Hayashi, T
  • Temmyo, J
... View more Collapse

Applied Physics Letters - 1/1/2010

10.1063/1.3340945 View at source

  • ISSN 00036951

Inhibition of In desorption in diluted nitride InAsN quantum dots

  • Reyes, DF
  • González, D
  • Sales, DL
  • Gargallo-Caballero, R
  • Guzmán, A
  • Ulloa, JM
  • Hierro, A
... View more Collapse

Applied Physics Letters - 14/2/2011

10.1063/1.3554386 View at source

  • ISSN 00036951

Role of the wetting layer in the enhanced responsivity of InAs/GaAsSb quantum dot infrared photodetectors

  • Guzmán, A
  • Yamamoto, K
  • Ulloa, JM
  • Llorens, JM
  • Hierro, A

Applied Physics Letters - 6/7/2015

10.1063/1.4926364 View at source

  • ISSN 00036951

Effect of nitrogen on the optical properties of InGaAsN p-i-n structures grown on misoriented (111)B GaAs substrates

  • Miguel-Sánchez, J
  • Guzmán, A
  • Ulloa, JM
  • Hierro, A
  • Muñoz, E

Applied Physics Letters (p. 2524-2526) - 5/4/2004

10.1063/1.1695639 View at source

  • ISSN 00036951

This researcher has no books.

The impact of alloyed capping layers on the performance of INAS/GAAS quantum dot solar cells

  • Utrilla A
  • Reyes D
  • Llorens J
  • Artacho I
  • Ben T
  • González D
  • Ga?evi? Z
  • Guzman A
  • Hierro A
  • Ulloa J
... View more Collapse

Advances In Energy Research (p. 83-122) - 1/1/2017

  • ISSN 22876316
  • iMarina

J. M. ULLOA, M. DEL MORAL, M. BOZKURT, R. GARGALLO-CABALLERO, A. GUZMÁN, P. M. KOENRAAD, A. HIERRO "GaAsSb-capped InAs quantum dots: from enlarged quantum dot height to alloy fluctuations" Internacional Quantum Dot Conference 2010. Nottinghan (UK), 2010

  • P. M. Koenraad
  • M. DEL MORAL
  • M. Bozkurt
  • ULLOA HERRERO, JOSE MARIA
  • FERNANDEZ GONZALEZ, ALVARO DE GUZMAN
  • HIERRO CANO, ADRIAN

Gaassb-Capped Inas Quantum Dots: From Enlarged Quantum Dot Height To Alloy Fluctuations (p. 0-0) - 26/4/2010

  • iMarina

J.M. ULLOA, R. GARGALLO-CABALLERO, A. GUZMÁN, A. HIERRO . "GaAsSbN-capped InAs quantum dots for 1.3 - 1.55 µm emission" European Materials Research Society Spring Meeting 2010. Strasbourg (France), 2010

  • ULLOA HERRERO, JOSE MARIA
  • FERNANDEZ GONZALEZ, ALVARO DE GUZMAN
  • HIERRO CANO, ADRIAN

Gaassbn-Capped Inas Quantum Dots For 1.3 ¿ 1.55 µM Emission (p. 0-0) - 7/6/2010

  • iMarina

Evaluation of the In desorption during the capping process of diluted nitride In(Ga)As quantum dots

  • Reyes, DF
  • Sales, DL
  • Gargallo-Caballero, R
  • Ulloa, JM
  • Hierro, A
  • Guzmán, A
  • García, R
  • González, D
... View more Collapse

Journal Of Physics: Conference Series - 1/1/2011

10.1088/1742-6596/326/1/012049 View at source

  • ISSN 17426588

Carrier diffusion lengths in (In,Ga)(As,N)/GaAs quantum wells studied by spatially resolved cathodoluminescence

  • Jahn, U
  • Miguel-Sanchez, J
  • Flissikowski, T
  • Grahn, HT
  • Hey, R
  • Guzmán, A

Physica Status Solidi (C) Current Topics In Solid State Physics (p. 627-+) - 8/5/2006

10.1002/pssc.200564131 View at source

  • ISSN 18626351

Electroluminescence analysis of 1.3-1.5 mu m InAs quantum dot LEDs with (Ga,In)(N,As) capping layers

  • Montes, M
  • Hierro, A
  • Ulloa, JM
  • Guzmán, A
  • Al Khalfioui, M
  • Hugues, M
  • Damilano, B
  • Massies, J
... View more Collapse

Physica Status Solidi (C) Current Topics In Solid State Physics (p. 1424-+) - 1/1/2009

10.1002/pssc.200881521 View at source

  • ISSN 18626351

Dependence of N incorporation into (Ga)InAsN QDs on Ga content probed by rapid thermal annealing

  • Gargallo-Caballero, R
  • Guzmán, A
  • Hopkinson, M
  • Ulloa, JM
  • Hierro, A
  • Calleja, E

Physica Status Solidi (C) Current Topics In Solid State Physics (p. 1441-+) - 1/1/2009

10.1002/pssc.200881524 View at source

  • ISSN 18626351

Local vibration modes and nitrogen incorporation in AlGaAs : N layers

  • Gallardo, E
  • Lazic, S
  • Calleja, JM
  • Miguel-Sánchez, J
  • Montes, M
  • Hierro, A
  • Gargallo-Caballero, R
  • Guzmán, A
  • Muñoz, E
  • Teweldeberhan, AM
  • Fahy, S
... View more Collapse

Physica Status Solidi c (p. 2345-2348) - 1/12/2008

10.1002/pssc.200778487 View at source

Broad band structure tunability of InAs/GaAs quantum dots with a thin GaAsSbN capping layer

  • M Montes
  • DL Sales
  • DF Reyes
  • D. González
  • ULLOA HERRERO, JOSE MARIA
  • FERNANDEZ GONZALEZ, ALVARO DE GUZMAN
  • HIERRO CANO, ADRIAN
... View more Collapse

Proceedings (p. 0-3) - 23/5/2012

  • iMarina

Oxide based UV photodetection using schottky photodiodes

  • ULLOA HERRERO, JOSE MARIA
  • FERNANDEZ GONZALEZ, ALVARO DE GUZMAN
  • HIERRO CANO, ADRIAN
  • Muñoz Merino, Elías

Proceedings (p. 0-0) - 16/3/2011

  • iMarina

Tuning the size, strain and band offsets of InAs/GaAs quantum dots through a thin GaAs(Sb)(N) capping layer

  • M Montes
  • M Boz
  • K Yamamoto
  • ULLOA HERRERO, JOSE MARIA
  • FERNANDEZ GONZALEZ, ALVARO DE GUZMAN
  • HIERRO CANO, ADRIAN

Proceedings (p. 0-0) - 20/3/2011

  • iMarina

This researcher has no working papers.

This researcher has no technical reports.

Zinc Oxide For TeraHertz Cascade Devices

  • HIERRO CANO, ADRIAN (Investigador principal (IP))
  • MONTES BAJO, MIGUEL (Participante)
  • ULLOA HERRERO, JOSE MARIA (Participante)
  • FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Participante)

Period: 01-09-2015 - 29-02-2020

Type of funding: International

Amount of funding: 698871,25 Euros.

  • iMarina

Extensión de medida de catodoluminiscencia(CL) al rango infrarrojo en microcospio de barrido electrónico FESEM

  • Calleja Pardo, Enrique (Investigador principal (IP))
  • Sanchez Garcia, Miguel Angel (Participante)
  • FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Participante)
  • HIERRO CANO, ADRIAN (Participante)

Period: 01-01-2013 - 31-12-2015

Type of funding: National

  • iMarina

ZNMGO-based nanocolumnar and core-shell leds with high power efficiencies

  • Nakamura ., Atsushi (Participante)
  • UTRILLA LOMAS, ANTONIO DAVID (Miembro del equipo de trabajo)
  • KURTZ DE GRIÑO, ALEJANDRO (Miembro del equipo de trabajo)
  • ULLOA HERRERO, JOSE MARIA (Participante)
  • FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Participante)
  • Muñoz Merino, Elías (Participante)
  • HIERRO CANO, ADRIAN (Investigador principal (IP))
... View more Collapse

Period: 01-12-2010 - 30-11-2013

Type of funding: National

Amount of funding: 174336,00 Euros.

  • iMarina

Smart nanostructured semiconductors for energy saving light solutions

  • FERNANDEZ GARRIDO, SERGIO (Participante)
  • Calleja Pardo, Enrique (Investigador principal (IP))
  • GRANDAL QUINTANA, JAVIER (Participante)
  • FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Participante)
  • Sanchez Garcia, Miguel Angel (Participante)
  • HIERRO CANO, ADRIAN (Participante)
  • PRIETO MARTIN, JOSE LUIS (Participante)
  • PADILLA GONZALEZ, ISIDORO (Participante)
  • Gacevic, Zarko (Participante)
  • Martínez Rodrigo, Javier (Participante)
  • Notzel, Richard (Participante)
  • Calle Gómez, Fernando (Participante)
... View more Collapse

Period: 01-09-2009 - 31-08-2012

Type of funding: International

Amount of funding: 800650,00 Euros.

  • iMarina

Regrowth of a laterally-biased double quantum well tunable detector

  • FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Investigador principal (IP))
  • HIERRO CANO, ADRIAN (Participante)
  • ULLOA HERRERO, JOSE MARIA (Participante)

Period: 01-03-2009 - 28-02-2010

Type of funding: International

Amount of funding: 70000,00 Euros.

  • iMarina

33 RD workshop on compound semiconductor devices and integrated circuits

  • FUENTES ., GONZALO (Participante)
  • Sanchez Garcia, Miguel Angel (Participante)
  • FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Participante)
  • Calle Gómez, Fernando (Investigador principal (IP))

Period: 15-02-2009 - 31-12-2009

Type of funding: National

  • iMarina

Nano y microdispositivos basados en ZnO para la detección de H2 y UV.

  • MONTES BAJO, MIGUEL (Participante)
  • ULLOA HERRERO, JOSE MARIA (Participante)
  • FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Participante)
  • Muñoz Merino, Elías (Participante)
  • HIERRO CANO, ADRIAN (Investigador principal (IP))

Period: 01-01-2009 - 31-12-2011

Type of funding: National

Amount of funding: 207636,00 Euros.

  • iMarina

Desarrollo de laseres horizontales y de cavidad vertical para La banda de 1.35 a 1.55 micras basados en pozos cuánticos de gainnas/gaas

  • SANZ LLUCH, M. DEL MAR (Participante)
  • MONTES BAJO, MIGUEL (Participante)
  • ULLOA HERRERO, JOSE MARIA (Participante)
  • FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Participante)
  • HIERRO CANO, ADRIAN (Investigador principal (IP))

Period: 31-12-2005 - 31-03-2009

Type of funding: National

  • iMarina

Antimóniuros cuánticos para fotónica cuántica y fotovoltaica: fabricación de materiales y dispositivos

  • STANOJEVIC, LAZAR (Miembro del equipo de trabajo)
  • STANOJEVIC, LAZAR (Investigador principal (IP))
  • CATALAN GOMEZ, SERGIO (Miembro del equipo de trabajo)
  • GALLEGO CARRO, ALEJANDRO (Miembro del equipo de trabajo)
  • FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Investigador principal (IP))
  • ULLOA HERRERO, JOSE MARIA (Investigador principal (IP))

Period: 01-06-2020 - 31-05-2023

Type of funding: National

Amount of funding: 82280,00 Euros.

  • iMarina

Nuevas nanoestructuras basadas en Sb para aplicaciones fotovoltaicas de alta eficiencia

  • GONZALO MARTIN, ALICIA (Miembro del equipo de trabajo)
  • STANOJEVIC, LAZAR (Miembro del equipo de trabajo)
  • FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Investigador principal (IP))
  • ULLOA HERRERO, JOSE MARIA (Investigador principal (IP))

Period: 30-12-2016 - 31-12-2020

Type of funding: National

Amount of funding: 90750,00 Euros.

  • iMarina

Surface InGaAs nanostructures for sensing applications

  • FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Codirector)
  • FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Director) Doctorando: Milla Rodrigo, María José

1/1/2015

  • iMarina

Desarrollo de dispositivos optoelectrónicos mediante crecimiento por MBE y caracterización de nanoestructuras de punto cuántico basadas en (Ga,In)(As,N)

  • Fernández González, Álvaro G. (Codirector)
  • FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Director) Doctorando: Gargallo Caballero, Raquel

1/1/2010

  • iMarina

Crecimiento por MBE de pozos cuánticos de InGaAsN sobre GaAs (111) B y (100) para su aplicación en láseres de semiconductor.

  • FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Codirector)
  • FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Director) Doctorando: Miguel Sanchez, Javier

1/1/2006

  • iMarina

This researcher has no patents or software licenses.

Last data update: 3/5/24 7:07 PM