Fernandez Gonzalez, Alvaro De Guzman alvarodeguzman.fernandez@upm.es

Publications

Structural and morphological characteristics of InGaAs/GaAs quantum well structures on tilted (1 1 1)B GaAs grown by MBE

  • Sanchez, JJ
  • Marty, O
  • Hopkinson, M
  • Izpura, I
  • Guzman, A
  • Tijero, JMG

Journal Of Crystal Growth (p. 363-371) - 1/9/1998

10.1016/s0022-0248(98)00471-0 View at source

  • ISSN 00220248

Growth and characterization of a bound-to-quasi-continuum QWIP with Al-graded triangular confinement barriers

  • Guzmán, A
  • Sánchez-Rojas, JL
  • Tijero, JMG
  • Hernando, J
  • Calleja, E
  • Muñoz, E
  • Vergara, G
  • Almazán, R
  • Gómez, LJ
  • Verdú, M
  • Montojo, MT
... View more Collapse

Ieee Photonics Technology Letters (p. 1650-1652) - 1/1/1999

10.1109/68.806876 View at source

  • ISSN 10411135

Optical characterisation of quantum well infra-red detector structures

  • A Guzmán
  • JL Sánchez-Rojas
  • JMG Tijero
  • JJ Sánchez
  • J Hernando
  • E Calleja
  • E Muñoz
  • G Vergara
  • MT Montojo
  • LJ Gómez
  • P Rodriíguez
  • R Almazán
  • M Verdú
... View more Collapse

Iee Proceedings-Optoelectronics (p. 89-92) - 1/12/1999

10.1049/ip-opt:19990183 View at source

  • ISSN 13502433

Voltage-tunable two-colour quantum well infrared detector with Al-graded triangular confinement barriers

  • Guzmán, A
  • Sánchez-Rojas, JL
  • Tijero, JMG
  • Hernando, J
  • Calleja, E
  • Muñoz, E
  • Vergara, G
  • Almazán, R
  • Sánchez, FJ
  • Verdú, M
  • Montojo, MT
... View more Collapse

Semiconductor Science And Technology (p. 285-288) - 1/1/2001

10.1088/0268-1242/16/5/301 View at source

  • ISSN 13616641

Effect of indium content on the normal-incident photoresponse of InGaAs/GaAs quantum-well infrared photodetectors

  • Hernando, J
  • Sánchez-Rojas, JL
  • Guzmán, A
  • Muñoz, E
  • Tijero, JMG
  • González, D
  • Aragón, G
  • García, R
... View more Collapse

Applied Physics Letters (p. 2390-2392) - 16/4/2001

10.1063/1.1365951 View at source

  • ISSN 00036951

Mechanisms affecting the photoluminescence spectra of GaInNAs after post-growth annealing

  • Tournié, E
  • Pinault, MA
  • Guzmán, A

Applied Physics Letters (p. 4148-4150) - 1/1/2002

10.1063/1.1481978 View at source

  • ISSN 00036951

GaAs-Based modulation-doped quantum-well infrared photodetectors for single- and two-color detection in 3-5 mu m

  • Luna, E
  • Guzmán, A
  • Sánchez-Rojas, JL
  • Sánchez, JM
  • Muñoz, E

Ieee Journal Of Selected Topics In Quantum Electronics (p. 992-997) - 1/9/2002

10.1109/jstqe.2002.804240 View at source

  • ISSN 1077260X

Modulation-doped double-barrier quantum well infrared detectors for photovoltaic operation in 3-5 mu m

  • Luna, E
  • Sánchez-Rojas, JL
  • Guzmán, A
  • Tijero, JMG
  • Muñoz, E

Ieee Photonics Technology Letters (p. 105-107) - 1/1/2003

10.1109/lpt.2002.805791 View at source

  • ISSN 10411135

Growth and characterization of modulation-doped double barrier quantum well infrared photodetectors

  • Luna, E
  • Guzmán, A
  • Sánchez-Rojas, JL
  • Tijero, JMG
  • Hey, R
  • Hernando, J
  • Muñoz, E
... View more Collapse

Journal Of Vacuum Science & Technology b (p. 883-887) - 1/1/2003

10.1116/1.1562643 View at source

  • ISSN 10711023

Dilute nitride based double-barrier quantum-well infrared photodetector operating in the near infrared

  • Luna, E
  • Hopkinson, M
  • Ulloa, JM
  • Guzmán, A
  • Muñoz, E

Applied Physics Letters (p. 3111-3113) - 13/10/2003

10.1063/1.1618931 View at source

  • ISSN 00036951

This researcher has no books.

The impact of alloyed capping layers on the performance of INAS/GAAS quantum dot solar cells

  • Utrilla A
  • Reyes D
  • Llorens J
  • Artacho I
  • Ben T
  • González D
  • Ga?evi? Z
  • Guzman A
  • Hierro A
  • Ulloa J
... View more Collapse

Advances In Energy Research (p. 83-122) - 1/1/2017

  • ISSN 22876316
  • iMarina

S. Lazic, E. Gallardo, J.M. Calleja, J. Miguel-Sánchez, M. Montes, A. Hierro, R. Gargallo-Caballero, A. Guzmán, E. Muñoz, A.M Teweldeberhan, S.Fahy "Resonant Raman study of local vibrational modes in AlxGa1-xAs1-yNy layers" 13th International Conference o

  • S Lazic
  • S FAHY
  • JM Calleja[et al]

15/7/2007

  • iMarina

E. Gallardo, S. Lazic, J. M. Calleja, J. Miguel-Sánchez, M. Montes, A. Hierro, R. Gargallo-Caballero, A. Guzmán, A.M. Teweldeberhan, S. Fahy "Local vibration modes and nitrogen incorporation in AlGaAs:N layers" 7th International Conference on Nitride Se

  • S LAZIC
  • S Fahy
  • J, Miguel-Sánchez,[et al]

16/9/2007

  • iMarina

The influence of the Ga content on the N incorporation in InAsN and GaInNAs Quantum Dots 7th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces (ESPS-NIS), Les Arcenaulx, Marseille (Francia), 2008

  • M. Hopkinson
  • ULLOA HERRERO, JOSE MARIA
  • FERNANDEZ GONZALEZ, ALVARO DE GUZMAN
  • HIERRO CANO, ADRIAN
  • Calleja Pardo, Enrique

The Influence Of The Ga Content On The N Incorporation In Inasn And Gainnas Quantum Dots 7th International Workshop On Epitaxial (p. 0-0) - 13/10/2008

  • iMarina

Local vibration modes and nitrogen incorporation in AlGaAs : N layers

  • Gallardo, E
  • Lazic, S
  • Calleja, JM
  • Miguel-Sánchez, J
  • Montes, M
  • Hierro, A
  • Gargallo-Caballero, R
  • Guzmán, A
  • Muñoz, E
  • Teweldeberhan, AM
  • Fahy, S
... View more Collapse

Physica Status Solidi c (p. 2345-2348) - 1/12/2008

10.1002/pssc.200778487 View at source

The influence of Ga composition of GaInAsN QDs on N incorporation.

  • M. Hopkinson
  • ULLOA HERRERO, JOSE MARIA
  • FERNANDEZ GONZALEZ, ALVARO DE GUZMAN
  • Muñoz Merino, Elías

7th International Workshop On Epitaxial Semiconductors On Patterned Substrates And Novel Index Surfaces (p. 103-105) - 21/4/2008

  • iMarina

The effect of ions and Sb on the carrier localization in GaInNAs quantum wells 15th International Conference on Molecular Beam Epitaxy Vancouver (Canada), 2008

  • F ISHIKAWA
  • E Luna
  • A Trampert[et al]

The Effect Of Ions And Sb On The Carrier Localization In Gainnas Quantum Wells (p. 0-0) - 3/8/2008

  • iMarina

Enhancement of N incorporation into (Ga)InAsN quantum dots International Symposium on Compound Semiconductors (ISCS) Friburgo (Alemania), 2008

  • M. Hopkinson
  • ULLOA HERRERO, JOSE MARIA
  • FERNANDEZ GONZALEZ, ALVARO DE GUZMAN
  • HIERRO CANO, ADRIAN
  • Calleja Pardo, Enrique

Enhancement Of N Incorporation Into (Ga)Inasn Quantum Dots (p. 0-0) - 21/9/2008

  • iMarina

Electroluminescence analysis of 1.3-1.5 µm InAs quantum dot LEDs with (Ga,In)(N,As) capping layers 35th International Symposium on Compound Semiconductors (ISCS) Friburgo (Alemania), 2008

  • M. Hugues
  • M. Al KHALFIOU
  • J. MASSIES
  • B. DAMILANO
  • ULLOA HERRERO, JOSE MARIA
  • FERNANDEZ GONZALEZ, ALVARO DE GUZMAN
  • MONTES BAJO, MIGUEL
  • HIERRO CANO, ADRIAN
... View more Collapse

Electroluminescence Analysis Of 1.3-1.5 µM Inas Quantum Dot Leds With (Ga,In)(N,As) Capping Layers (p. 0-0) - 21/9/2008

  • iMarina

Dependence of N incorporation into (Ga)InAsN QDs on Ga content probed by rapid thermal annealing

  • Gargallo-Caballero, R
  • Guzmán, A
  • Hopkinson, M
  • Ulloa, JM
  • Hierro, A
  • Calleja, E

Physica Status Solidi (C) Current Topics In Solid State Physics (p. 1441-+) - 1/1/2009

10.1002/pssc.200881524 View at source

  • ISSN 18626351

Electroluminescence analysis of 1.3-1.5 mu m InAs quantum dot LEDs with (Ga,In)(N,As) capping layers

  • Montes, M
  • Hierro, A
  • Ulloa, JM
  • Guzmán, A
  • Al Khalfioui, M
  • Hugues, M
  • Damilano, B
  • Massies, J
... View more Collapse

Physica Status Solidi (C) Current Topics In Solid State Physics (p. 1424-+) - 1/1/2009

10.1002/pssc.200881521 View at source

  • ISSN 18626351

This researcher has no working papers.

This researcher has no technical reports.

Nanoestructura de Semiconductores como Componentes para La Información Cuántica

  • FERNANDEZ GARRIDO, SERGIO (Participante)
  • GRACIA VERANO, VICTOR (Investigador principal (IP))
  • CERUTTI CERUTTI, LAURENT (Investigador principal (IP))
  • RISTIC RISTIC, JELENA (Investigador principal (IP))
  • SANZ MONASTERIO, MIKEL (Investigador principal (IP))
  • HIERRO CANO, ADRIAN (Participante)
  • MONTES BAJO, MIGUEL (Participante)
  • FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Participante)
  • Calleja Pardo, Enrique (Investigador principal (IP))
... View more Collapse

Period: 01-12-2005 - 01-01-2010

Type of funding: Regional

  • iMarina

Nanoestructura de Semiconductores como Componentes para La Información Cuántica

  • GRACIA VERANO, VICTOR
  • CERUTTI CERUTTI, LAURENT
  • RISTIC RISTIC, JELENA
  • SANZ MONASTERIO, MIKEL
  • Calleja Pardo, Enrique (Investigador principal (IP))
  • FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Investigador/a)

Period: 01-12-2005 - 01-01-2010

  • iMarina

Desarrollo de laseres horizontales y de cavidad vertical para La banda de 1.35 a 1.55 micras basados en pozos cuánticos de gainnas/gaas

  • SANZ LLUCH, M. DEL MAR (Participante)
  • MONTES BAJO, MIGUEL (Participante)
  • ULLOA HERRERO, JOSE MARIA (Participante)
  • FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Participante)
  • HIERRO CANO, ADRIAN (Investigador principal (IP))

Period: 31-12-2005 - 31-03-2009

Type of funding: National

  • iMarina

Nano y microdispositivos basados en ZnO para la detección de H2 y UV.

  • MONTES BAJO, MIGUEL (Participante)
  • ULLOA HERRERO, JOSE MARIA (Participante)
  • FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Participante)
  • Muñoz Merino, Elías (Participante)
  • HIERRO CANO, ADRIAN (Investigador principal (IP))

Period: 01-01-2009 - 31-12-2011

Type of funding: National

Amount of funding: 207636,00 Euros.

  • iMarina

33 RD workshop on compound semiconductor devices and integrated circuits

  • FUENTES ., GONZALO (Participante)
  • Sanchez Garcia, Miguel Angel (Participante)
  • FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Participante)
  • Calle Gómez, Fernando (Investigador principal (IP))

Period: 15-02-2009 - 31-12-2009

Type of funding: National

  • iMarina

Regrowth of a laterally-biased double quantum well tunable detector

  • FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Investigador principal (IP))
  • HIERRO CANO, ADRIAN (Participante)
  • ULLOA HERRERO, JOSE MARIA (Participante)

Period: 01-03-2009 - 28-02-2010

Type of funding: International

Amount of funding: 70000,00 Euros.

  • iMarina

Smart nanostructured semiconductors for energy saving light solutions

  • FERNANDEZ GARRIDO, SERGIO (Participante)
  • Calleja Pardo, Enrique (Investigador principal (IP))
  • GRANDAL QUINTANA, JAVIER (Participante)
  • FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Participante)
  • Sanchez Garcia, Miguel Angel (Participante)
  • HIERRO CANO, ADRIAN (Participante)
  • PRIETO MARTIN, JOSE LUIS (Participante)
  • PADILLA GONZALEZ, ISIDORO (Participante)
  • Gacevic, Zarko (Participante)
  • Martínez Rodrigo, Javier (Participante)
  • Notzel, Richard (Participante)
  • Calle Gómez, Fernando (Participante)
... View more Collapse

Period: 01-09-2009 - 31-08-2012

Type of funding: International

Amount of funding: 800650,00 Euros.

  • iMarina

ZNMGO-based nanocolumnar and core-shell leds with high power efficiencies

  • Nakamura ., Atsushi (Participante)
  • UTRILLA LOMAS, ANTONIO DAVID (Miembro del equipo de trabajo)
  • KURTZ DE GRIÑO, ALEJANDRO (Miembro del equipo de trabajo)
  • ULLOA HERRERO, JOSE MARIA (Participante)
  • FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Participante)
  • Muñoz Merino, Elías (Participante)
  • HIERRO CANO, ADRIAN (Investigador principal (IP))
... View more Collapse

Period: 01-12-2010 - 30-11-2013

Type of funding: National

Amount of funding: 174336,00 Euros.

  • iMarina

Extensión de medida de catodoluminiscencia(CL) al rango infrarrojo en microcospio de barrido electrónico FESEM

  • Calleja Pardo, Enrique (Investigador principal (IP))
  • Sanchez Garcia, Miguel Angel (Participante)
  • FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Participante)
  • HIERRO CANO, ADRIAN (Participante)

Period: 01-01-2013 - 31-12-2015

Type of funding: National

  • iMarina

Aleaciones emergentes de nitruros diluidos III-V y nanoestructuras relacionadas para aplicaciones fotovoltaicas y de fotodetección de alta eficiencia

  • UTRILLA LOMAS, ANTONIO DAVID (Miembro del equipo de trabajo)
  • GONZALO MARTIN, ALICIA (Miembro del equipo de trabajo)
  • ULLOA HERRERO, JOSE MARIA (Investigador principal (IP))
  • FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Participante)

Period: 01-01-2014 - 31-12-2016

Type of funding: National

Amount of funding: 103220,41 Euros.

  • iMarina

Crecimiento por MBE de pozos cuánticos de InGaAsN sobre GaAs (111) B y (100) para su aplicación en láseres de semiconductor.

  • FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Codirector)
  • FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Director) Doctorando: Miguel Sanchez, Javier

1/1/2006

  • iMarina

Desarrollo de dispositivos optoelectrónicos mediante crecimiento por MBE y caracterización de nanoestructuras de punto cuántico basadas en (Ga,In)(As,N)

  • Fernández González, Álvaro G. (Codirector)
  • FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Director) Doctorando: Gargallo Caballero, Raquel

1/1/2010

  • iMarina

Surface InGaAs nanostructures for sensing applications

  • FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Codirector)
  • FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Director) Doctorando: Milla Rodrigo, María José

1/1/2015

  • iMarina

This researcher has no patents or software licenses.

Last data update: 3/5/24 7:07 PM