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Author profile at the institutional portal

Calleja Pardo, Enrique enrique.calleja@upm.es

INGENIERÍA ELECTRÓNICA / Universidad Politécnica de Madrid

Publications

DISPLACEMENT PHOTOCURRENTS AND SCREENING EFFECTS IN NOVEL PIEZOELECTRIC INGAAS/GAAS MULTIPLE-QUANTUM-WELL P-I-N-DIODES

  • VALTUENA, JF
  • IZPURA, I
  • SANCHEZROJAS, JL
  • SACEDON, A
  • CALLEJA, E
  • MUNOZ, E;

Semiconductor Science And Technology (p. 1528-1533) - 1/12/1995

10.1088/0268-1242/10/11/016 View at source

  • ISSN 13616641

DISLOCATION BEHAVIOR IN INGAAS STEP-GRADED AND ALTERNATING STEP-GRADED STRUCTURES - DESIGN RULES FOR BUFFER FABRICATION

  • ARAUJO, D
  • GONZALEZ, D
  • GARCIA, R
  • SACEDON, A
  • CALLEJA, E;

Applied Physics Letters (p. 3632-3634) - 1/1/1995

10.1063/1.115341 View at source

  • ISSN 00036951

DIRECT EVIDENCE OF THE DX CENTER LINK TO THE L-CONDUCTION-BAND MINIMUM IN GAALAS

  • CALLEJA, E
  • GOMEZ, A
  • MUNOZ, E;

Applied Physics Letters (p. 383-385) - 1/12/1988

10.1063/1.99473 View at source

  • ISSN 00036951

DESIGN AND CHARACTERIZATION OF (111)B INGAAS/GAAS PIEZOELECTRIC SUPERLATTICES

  • Sanchezrojas, JL
  • Sacedon, A
  • Sanzhervas, A
  • Calleja, E
  • Munoz, E
  • Abril, EJ
  • Aguilar, M
  • Lopez, M
... View more Collapse

Semiconductor Science And Technology (p. 1173-1176) - 1/12/1995

10.1088/0268-1242/10/8/022 View at source

  • ISSN 13616641

DEPENDENCE ON THE IN CONCENTRATION OF THE PIEZOELECTRIC FIELD IN (111)B INGAAS/GAAS STRAINED HETEROSTRUCTURES

  • SANCHEZROJAS, JL
  • SACEDON, A
  • GONZALEZSANZ, F
  • CALLEJA, E
  • MUNOZ, E;

Applied Physics Letters (p. 2042-2044) - 1/1/1994

10.1063/1.112787 View at source

  • ISSN 00036951

DEEP-LEVEL TRANSIENT SPECTROSCOPY ASSESSMENT OF SILICON CONTAMINATION IN ALGAAS LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

  • CALLEJA, E
  • SANCHEZ, F
  • MUNOZ, E
  • GIBART, P
  • POWELL, A
  • ROBERTS, JS;

Journal Of Electronic Materials (p. 1017-1022) - 1/1/1995

10.1007/bf02652976 View at source

  • ISSN 03615235

DEEP-LEVEL SPECTROSCOPY BY TRANSIENT CAPACITANCE TECHNIQUES UNDER ELECTRICAL RESONANCE

  • IZPURA, JI
  • HERRERO, JM
  • SANDOVAL, F
  • CALLEJA, E
  • LACRUZ, A
  • MUNOZ, E;

Ieee Transactions On Instrumentation And Measurement (p. 16-18) - 1/1/1984

10.1109/tim.1984.4315143 View at source

  • ISSN 00189456

DEEP TRAP CHARACTERIZATION IN SI-DOPED IN0.52AL0.48AS/INP UNDER HYDROSTATIC-PRESSURE - A SEARCH FOR DX CENTERS

  • CALLEJA, E
  • ROMERO, AL
  • DEAVILA, SF
  • MUNOZ, E
  • CASTAGNE, J;

Semiconductor Science And Technology (p. 206-210) - 1/12/1993

10.1088/0268-1242/8/2/010 View at source

  • ISSN 13616641

DEEP CENTERS INTRODUCED BY ARGON ION-BOMBARDMENT IN N-TYPE SILICON

  • GARRIDO, J
  • CALLEJA, E
  • PIQUERAS, J;

Solid-State Electronics (p. 1121-1126) - 1/1/1981

10.1016/0038-1101(81)90180-5 View at source

  • ISSN 00381101

DAMAGE CONSTANT AND DEEP-LEVEL TRANSIENT SPECTROSCOPY IN NEUTRON-IRRADIATED GAASP ALLOYS

  • GARCIA, F
  • MUNOZ, E
  • CALLEJA, E
  • ALCOBER, V;

Journal Of Electronic Materials (p. 133-139) - 1/5/1986

10.1007/bf02655326 View at source

  • ISSN 03615235

This researcher has no books.

TEM study of (Ga, AI)N nanocolumns and embedded GaN nanodiscs

  • Trampert A
  • Ristic J
  • Jahn U
  • Calleja E
  • Ploog K

Microscopy Of Semiconducting Materials 2003 (p. 167-170) - 1/1/2018

10.1201/9781351074636 View at source

Ga(in)N nanowires grown by molecular beam epitaxy: From quantum light emitters to nanotransistors

  • Gačević Ž
  • Calleja E

Novel Compound Semiconductor Nanowires: Materials, Devices, And Applications (p. 319-364) - 1/1/2017

10.1201/9781315364407 View at source

Z. Gacevic, S. Fernández-Garrido, E. Calleja, D. Hosseini, S. Estrade and F. Peiró "Structural properties of InAlN single layers nearly latice-matched to GaN grown by plasma assisted molecular beal epitaxy"

  • S. Fernández-Garrido
  • S. Estradé
  • F. Peiró
  • D. Hosseini
  • Gacevic, Zarko
  • Calleja Pardo, Enrique

"Structural Properties Of Inaln Single Layers Nearly Latice-Matched To Gan Grown By Plasma Assisted Molecular Beal Epitaxy" (p. 0-0) - 20/3/2011

  • iMarina

Z. Gacevic, P. Lefebvre, F. Bertram, G. Schmidt, P. Veit, J. Christen, and E. Calleja "Growth and characterization of InGaN/GaN quantum dots for violet/blue applications"

  • P. Lefebvre
  • P. Veit
  • J. Christen
  • G. Schmidt
  • F. Bertram
  • Gacevic, Zarko
  • Calleja Pardo, Enrique
... View more Collapse

Growth And Characterization Of Ingan/Gan Quantum Dots For Violet/Blue Applications (p. 0-0) - 10/7/2012

  • iMarina

Z. GACEVIC, S. FERNÁNDEZ-GARRIDO, E. CALLEJA, E.LUNA, A. TRAMPERT "Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma assisted molecular beam epitaxy" 15th European Molecular Beam Epitaxy Workshop Zakopane (Poland

  • Gacevic, Zarko
  • Calleja Pardo, Enrique

"Growth And Characterization Of Lattice-Matched Inaln/Gan Bragg Reflectors Grown By Plasma Assisted Molecular Beam Epitaxy" (p. 0-0) - 8/3/2009

  • iMarina

Z. GACEVIC, S. FERNÁNDEZ-GARRIDO, E. CALLEJA "New approach to grow high reflectivity Al(Ga)N bragg reflectors by plasma-assited molecular beam epitaxy" 8th International Conference on Nitride Semiconductors Jeju (Korea), 2009

  • Gacevic, Zarko
  • Calleja Pardo, Enrique

"New Approach To Grow High Reflectivity Al(Ga)N Bragg Reflectors By Plasma-Assited Molecular Beam Epitaxy" (p. 0-0) - 18/10/2009

  • iMarina

Z. GACEVIC, S. FERNÁNDEZ-GARRIDO, E. CALLEJA "Current status and further challenge in MBE growth of lattice-matched InAlN/GaN Bragg reflectors" 8th International Conference on Nitride Semiconductors Jeju (Korea), 2009

  • Gacevic, Zarko
  • Calleja Pardo, Enrique

"Current Status And Further Challenge In Mbe Growth Of Lattice-Matched Inaln/Gan Bragg Reflectors" (p. 0-0) - 18/5/2009

  • iMarina

XRD analysis of InGaN uniform layers grown on Si (111) without any buffer layers and on Sapphire

  • Aseev, Pavel
  • SOTO RODRIGUEZ, PAUL
  • Notzel, Richard
  • Gacevic, Zarko
  • Sanchez Garcia, Miguel Angel
  • Calleja Pardo, Enrique

Proceedings (p. 0-3) - 24/8/2014

  • iMarina

Visible and solar-blind AlGaN metal-semiconductor-metal photodetectors grown on Si(111) substrates

  • Pau, JL
  • Muñoz, E
  • Sánchez-García, MA
  • Calleja, E

Physica Status Solidi A-Applications And Materials Science (p. 314-319) - 1/1/2002

10.1002/1521-396x(200208)192:2<314::aid-pssa314>3.0.co;2-y View at source

  • ISSN 00318965

Valence EELS analysis of multiple InGaN-QW structure for electronic properties

  • S. Estradé
  • N. García-Lepetit
  • L. López-Conesa
  • Francesca Peiró
  • C. Magen
  • A. Eljarrat
  • Gacevic, Zarko
  • Calleja Pardo, Enrique
... View more Collapse

Proceedings (p. 0-3) - 11/2/2015

  • iMarina

Understanding the selective area nucleation and growth of GaN Nanocolumns by MBE using Ti nanomasks

  • et al
  • Sanchez Garcia, Miguel Angel
  • Calleja Pardo, Enrique

Proceedings (p. 0-0) - 2/11/2011

  • iMarina

Understanding of the nucleation and growth of ordered GaN nanocolumns by MBE on GaN

  • S. Fernández-Garrido
  • J. Ristic
  • J. Grandal
  • Calleja Pardo, Enrique

Proceedings (p. 0-0) - 4/4/2012

  • iMarina

This researcher has no working papers.

This researcher has no technical reports.

Towards p-type conductivity in In0.5Ga0.5N nanocolumns on a Si (100) substrate with GaN buffer layers

  • Calleja Pardo, Enrique (Investigador principal (IP))
  • XIE, MENGYAO (Becario/a)
  • Sanchez Garcia, Miguel Angel (Participante)

Period: 15-06-2015 - 14-06-2017

Type of funding: International

Amount of funding: 170121,60 Euros.

  • iMarina

Substrate nanopatterning by e-beam lithography to growth ordered arrays of III-Nitride nanodetectors: application to IR detectors, emitters, and new Solar Cells

  • Calleja Pardo, Enrique (Investigador principal (IP))
  • Sanchez Garcia, Miguel Angel (Participante)

Period: 01-01-2011 - 31-12-2012

Type of funding: International

Amount of funding: 153917,00 Euros.

  • iMarina

Smart nanostructured semiconductors for energy saving light solutions

  • FERNANDEZ GARRIDO, SERGIO (Participante)
  • Calleja Pardo, Enrique (Investigador principal (IP))
  • GRANDAL QUINTANA, JAVIER (Participante)
  • FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Participante)
  • Sanchez Garcia, Miguel Angel (Participante)
  • HIERRO CANO, ADRIAN (Participante)
  • PRIETO MARTIN, JOSE LUIS (Participante)
  • PADILLA GONZALEZ, ISIDORO (Participante)
  • Gacevic, Zarko (Participante)
  • Martínez Rodrigo, Javier (Participante)
  • Notzel, Richard (Participante)
  • Calle Gómez, Fernando (Participante)
... View more Collapse

Period: 01-09-2009 - 31-08-2012

Type of funding: International

Amount of funding: 800650,00 Euros.

  • iMarina

Nanohilos basados en GaN para sistemas de información cuántica y circuitos digitales

  • FERNANDO SAAVEDRA, AMALIA LUISA (Participante)
  • HERRANZ FEITO, MIGUEL (Investigador/a)
  • Sanchez Garcia, Miguel Angel (Investigador principal (IP))
  • FOTEINOPOULOU, AIKATERINI (Participante)
  • Gacevic, Zarko (Participante)
  • Calleja Pardo, Enrique (Participante)
  • KARAGIANNIS, NIKOLAOS (Participante)
  • LASO CARBAJO, MANUEL (Participante)
... View more Collapse

Period: 01-01-2019 - 31-07-2022

Type of funding: National

Amount of funding: 193963,00 Euros.

  • iMarina

Nanoestructuras de semiconductores como componentes par ala información cuántica

  • Enrique Calleja Pardo (Investigador principal (IP))
  • MONTES BAJO, MIGUEL (Investigador/a)

Period: 01-01-2006 - 01-01-2009

  • iMarina

Nanoestructura de Semiconductores como Componentes para La Información Cuántica

  • FERNANDEZ GARRIDO, SERGIO (Participante)
  • GRACIA VERANO, VICTOR (Investigador principal (IP))
  • CERUTTI CERUTTI, LAURENT (Investigador principal (IP))
  • RISTIC RISTIC, JELENA (Investigador principal (IP))
  • SANZ MONASTERIO, MIKEL (Investigador principal (IP))
  • HIERRO CANO, ADRIAN (Participante)
  • MONTES BAJO, MIGUEL (Participante)
  • FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Participante)
  • Calleja Pardo, Enrique (Investigador principal (IP))
... View more Collapse

Period: 01-12-2005 - 01-01-2010

Type of funding: Regional

  • iMarina

Materiales y dispositivos optoelectrónicos basados en nitruros del grupo- III

  • Calleja Pardo, Enrique (Investigador principal (IP))

Period: 19-12-2019 - 31-12-2021

  • iMarina

Instalación/Actuación: Central de Tecnología del ISOM

  • Calleja Pardo, Enrique (Investigador principal (IP))

Period: 13-11-2008 - 15-10-2009

Type of funding: National

  • iMarina

InDaN and AIGaN semi-polar and non-polar pseudo-substrates made by Molecular Beam Epitaxy by ordered coalescence of nanocrystals

  • Calleja Pardo, Enrique (Investigador principal (IP))

Period: 01-01-2018 - 15-09-2022

  • iMarina

High quality and intrinsic Properties of InN and indium rich Nitride Alloys

  • Sanchez Garcia, Miguel Angel (Investigador principal (IP))
  • Calle Gómez, Fernando (Participante)
  • Calleja Pardo, Enrique (Participante)

Period: 01-10-2008 - 30-09-2012

Type of funding: International

Amount of funding: 388526,00 Euros.

  • iMarina

nxGa1-xN layers, nanowires, and nanodots on Silicon for clean energy applications

  • Calleja Pardo, Enrique (Director)
  • Gacevic, Zarko (Director) Doctorando: Aseev, Pavel

1/1/2017

  • iMarina

Investigations on III-nitrides nanostructures: application to renewable energies and bio-sensing

  • Calleja Pardo, Enrique (Director)
  • Gacevic, Zarko (Director) Doctorando: Soto Rodriguez, Paul Eduardo David

1/1/2016

  • iMarina

Growth and characterization of group-iii nitride nanocolumnar structures - crecimiento y caracterización de estructuras nanocolumnares de nitruros dle grupo iii

  • Enrique Calleja Pardo (Director) Doctorando: Jelena Ristic

1/1/2006

  • iMarina

Growth and characterization of gan/aln non-polar pseudo-substrates

  • Calleja Pardo, Enrique (Director) Doctorando: Fernando Saavedra, Amalia Luisa

1/1/2021

  • iMarina

Fabricación, caracterización y aplicaciones de detectores de UV basados en AlGaN.

  • Muñoz Merino, Elías (Director)
  • Calleja Pardo, Enrique (Director) Doctorando: PAU VIZCAINO, José Luis

1/1/2003

  • iMarina

Espejos de Braga de AlGaN/GaN crecidos por Epitaxia de Haces Moleculares para Dispositivos Optoelectrónicos de Cavidad Resonante

  • Enrique Calleja Pardo (Director)
  • Fernando Calle Gómez (Director) Doctorando: Fernández Ruano, Susana María

1/1/2004

  • iMarina

Crecimiento, fabricación y caracterización de diodos electroluminiscentes basados en pozos cuánticos de InGaN

  • Enrique Calleja Pardo (Director) Doctorando: Fernando Bernabé Naranjo Vega

1/6/2003

  • iMarina

Crecimiento y fabricación de transistores HEMT de AlGaN/GaN por epitaxia de haces moleculares

  • Enrique Calleja Pardo (Director) Doctorando: Ana Jimenez Martín

1/1/2003

  • iMarina

Crecimiento y caracterización de nitruros del grupo III sobre Si (111) por epitaxia de haces moleculares.

  • Calleja Pardo, Enrique (Director) Doctorando: SANCHEZ GARCIA, Miguel Angel

1/1/2000

  • iMarina

Crecimiento y caracterización de estructuras nanocolumnares de nitruros DLE grupo III.

  • Calleja Pardo, Enrique (Director) Doctorando: RISTIC, Jelena

1/1/2006

  • iMarina

This researcher has no patents or software licenses.

Last data update: 4/24/24 1:12 PM