Calleja Pardo, Enrique enrique.calleja@upm.es
Actividades
- Artículos 276
- Libros 0
- Capítulos de libro 2
- Congresos 172
- Documentos de trabajo 0
- Informes técnicos 0
- Proyectos de investigación 19
- Tesis dirigidas 14
- Patentes o licencias de software 0
Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si(111)
- Sanchez, FJ
- Calle, F
- Sanchez-Garcia, MA
- Calleja, E
- Munoz, E
- Molloy, CH
- Somerford, DJ
- Koschnick, FK
- Michael, K
- Spaeth, JM
M R S Internet Journal Of Nitride Semiconductor Research: (Materials Research Society) (p. art. no.-19) - 1/12/1998
- ISSN 10925783
- iMarina
Luminescence and morphological properties of GaN layers grown on SiC/Si(111) substrates
- Sanchez-Garcia, MA
- Ristic, J
- Calleja, E
- Perez-Rodriguez, A
- Serre, C
- Romano-Rodriguez, A
- Morante, JR
- Koegler, R
- Skorupa, W
- Trampert, A
- Ploog, KH
Physica Status Solidi A-Applications And Materials Science (p. 401-406) - 1/1/2002
10.1002/1521-396x(200208)192:2<401::aid-pssa401>3.0.co;2-9 Ver en origen
- ISSN 00318965
Local vibrational modes of H complexes in Mg-doped GaN grown by molecular beam epitaxy
- Cuscó, R.
- Artús, L.
- Pastor, D.
- Naranjo, F.B.
- Calleja, E.
Applied Physics Letters (p. 897-899) - 9/2/2004
10.1063/1.1645668 Ver en origen
- ISSN 00036951
- ISSN/ISBN 0003-6951
Light-Emitting-Diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range
- Bengoechea-Encabo, A
- Albert, S
- Lopez-Romero, D
- Lefebvre, P
- Barbagini, F
- Torres-Pardo, A
- Gonzalez-Calbet, JM
- Sanchez-Garcia, MA
- Calleja, E
Nanotechnology - 31/10/2014
10.1088/0957-4484/25/43/435203 Ver en origen
- ISSN 09574484
Lattice pulling effect and strain relaxation in axial (In, Ga)N/GaN nanowire heterostructures grown on GaN-buffered Si(111) substrate
- Kong, X
- Albert, S
- Bengoechea-Encabo, A
- Sanchez-Garcia, MA
- Calleja, E
- Trampert, A
Physica Status Solidi A-Applications And Materials Science (p. 736-739) - 1/4/2015
10.1002/pssa.201400198 Ver en origen
- ISSN 00318965
Investigation of III-V Nanowires by Plan-View Transmission Electron Microscopy: InN Case Study
- Luna, E
- Grandal, J
- Gallardo, E
- Calleja, JM
- Sánchez-García, MA
- Calleja, E
- Trampert, A
Microscopy And Microanalysis (p. 1471-1478) - 11/4/2014
10.1017/s1431927614013038 Ver en origen
- ISSN 14319276
- iMarina
- iMarina
Inversion domains in GaN layers grown on (111) silicon by molecular-beam epitaxy
- Sánchez, AM
- Pacheco, FJ
- Molina, SI
- Garcia, R
- Ruterana, P
- Sánchez-García, MA
- Calleja, E
Applied Physics Letters (p. 2688-2690) - 30/4/2001
10.1063/1.1368373 Ver en origen
- ISSN 00036951
Interplay between GaN and AlN sublattices in wurtzite AlxGa1-xN alloys revealed by Raman spectroscopy
- Alvarez, AL
- Calle, F
- Monroy, E
- Pau, JL
- Sanchez-Garcia, MA
- Calleja, E
- Munoz, E
- Omnes, F
- Gibart, P
- Hageman, PR;
Journal Of Applied Physics (p. 223-226) - 1/7/2002
10.1063/1.1478788 Ver en origen
- ISSN 00218979
Insight into the compositional and structural nano features of AlN/GaN DBRs by HAADF
- Eljarrat, Alberto
- Lopez-Conesa, Lluis
- Magen, Cesar
- Gacevic, Zarko
- Fernandez-Garrido, Sergio
- Calleja, Enrique
- Estrade, Sonia
- Peiro, Francesca
Microscopy And Microanalysis (p. 698-705) - 1/4/2013
10.1017/s1431927613000512 Ver en origen
- ISSN 14319276
Insight into high-reflectivity AlN/GaN Bragg reflectors with spontaneously formed (Al,Ga)N transient layers at the interfaces
- Gacevic, Z.
- Eljarrat, A.
- Peiro, F.
- Calleja, E.;
Journal Of Applied Physics - 14/5/2013
10.1063/1.4805054 Ver en origen
- ISSN 00218979
Este/a investigador/a no tiene libros.
TEM study of (Ga, AI)N nanocolumns and embedded GaN nanodiscs
- Trampert A
- Ristic J
- Jahn U
- Calleja E
- Ploog K
Microscopy Of Semiconducting Materials 2003 (p. 167-170) - 1/1/2018
Ga(in)N nanowires grown by molecular beam epitaxy: From quantum light emitters to nanotransistors
- Gačević Ž
- Calleja E
Novel Compound Semiconductor Nanowires: Materials, Devices, And Applications (p. 319-364) - 1/1/2017
Z. Gacevic, S. Fernández-Garrido, E. Calleja, D. Hosseini, S. Estrade and F. Peiró "Structural properties of InAlN single layers nearly latice-matched to GaN grown by plasma assisted molecular beal epitaxy"
- S. Fernández-Garrido
- S. Estradé
- F. Peiró
- D. Hosseini
- Gacevic, Zarko
- Calleja Pardo, Enrique
"Structural Properties Of Inaln Single Layers Nearly Latice-Matched To Gan Grown By Plasma Assisted Molecular Beal Epitaxy" (p. 0-0) - 20/3/2011
- iMarina
Z. Gacevic, P. Lefebvre, F. Bertram, G. Schmidt, P. Veit, J. Christen, and E. Calleja "Growth and characterization of InGaN/GaN quantum dots for violet/blue applications"
- P. Lefebvre
- P. Veit
- J. Christen
- G. Schmidt
- F. Bertram
- Gacevic, Zarko
- Calleja Pardo, Enrique
Growth And Characterization Of Ingan/Gan Quantum Dots For Violet/Blue Applications (p. 0-0) - 10/7/2012
- iMarina
Z. GACEVIC, S. FERNÁNDEZ-GARRIDO, E. CALLEJA, E.LUNA, A. TRAMPERT "Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma assisted molecular beam epitaxy" 15th European Molecular Beam Epitaxy Workshop Zakopane (Poland
- Gacevic, Zarko
- Calleja Pardo, Enrique
"Growth And Characterization Of Lattice-Matched Inaln/Gan Bragg Reflectors Grown By Plasma Assisted Molecular Beam Epitaxy" (p. 0-0) - 8/3/2009
- iMarina
Z. GACEVIC, S. FERNÁNDEZ-GARRIDO, E. CALLEJA "New approach to grow high reflectivity Al(Ga)N bragg reflectors by plasma-assited molecular beam epitaxy" 8th International Conference on Nitride Semiconductors Jeju (Korea), 2009
- Gacevic, Zarko
- Calleja Pardo, Enrique
"New Approach To Grow High Reflectivity Al(Ga)N Bragg Reflectors By Plasma-Assited Molecular Beam Epitaxy" (p. 0-0) - 18/10/2009
- iMarina
Z. GACEVIC, S. FERNÁNDEZ-GARRIDO, E. CALLEJA "Current status and further challenge in MBE growth of lattice-matched InAlN/GaN Bragg reflectors" 8th International Conference on Nitride Semiconductors Jeju (Korea), 2009
- Gacevic, Zarko
- Calleja Pardo, Enrique
"Current Status And Further Challenge In Mbe Growth Of Lattice-Matched Inaln/Gan Bragg Reflectors" (p. 0-0) - 18/5/2009
- iMarina
XRD analysis of InGaN uniform layers grown on Si (111) without any buffer layers and on Sapphire
- Aseev, Pavel
- SOTO RODRIGUEZ, PAUL
- Notzel, Richard
- Gacevic, Zarko
- Sanchez Garcia, Miguel Angel
- Calleja Pardo, Enrique
Proceedings (p. 0-3) - 24/8/2014
- iMarina
Visible and solar-blind AlGaN metal-semiconductor-metal photodetectors grown on Si(111) substrates
- Pau, JL
- Muñoz, E
- Sánchez-García, MA
- Calleja, E
Physica Status Solidi A-Applications And Materials Science (p. 314-319) - 1/1/2002
10.1002/1521-396x(200208)192:2<314::aid-pssa314>3.0.co;2-y Ver en origen
- ISSN 00318965
Valence EELS analysis of multiple InGaN-QW structure for electronic properties
- S. Estradé
- N. García-Lepetit
- L. López-Conesa
- Francesca Peiró
- C. Magen
- A. Eljarrat
- Gacevic, Zarko
- Calleja Pardo, Enrique
Proceedings (p. 0-3) - 11/2/2015
- iMarina
Understanding the selective area nucleation and growth of GaN Nanocolumns by MBE using Ti nanomasks
- et al
- Sanchez Garcia, Miguel Angel
- Calleja Pardo, Enrique
Proceedings (p. 0-0) - 2/11/2011
- iMarina
Este/a investigador/a no tiene documentos de trabajo.
Este/a investigador/a no tiene informes técnicos.
Towards p-type conductivity in In0.5Ga0.5N nanocolumns on a Si (100) substrate with GaN buffer layers
- Calleja Pardo, Enrique (Investigador principal (IP))
- XIE, MENGYAO (Becario/a)
- Sanchez Garcia, Miguel Angel (Participante)
Ejecución: 15-06-2015 - 14-06-2017
Tipo: Internacional
Importe financiado: 170121,60 Euros.
- iMarina
Substrate nanopatterning by e-beam lithography to growth ordered arrays of III-Nitride nanodetectors: application to IR detectors, emitters, and new Solar Cells
- Calleja Pardo, Enrique (Investigador principal (IP))
- Sanchez Garcia, Miguel Angel (Participante)
Ejecución: 01-01-2011 - 31-12-2012
Tipo: Internacional
Importe financiado: 153917,00 Euros.
- iMarina
Smart nanostructured semiconductors for energy saving light solutions
- FERNANDEZ GARRIDO, SERGIO (Participante)
- Calleja Pardo, Enrique (Investigador principal (IP))
- GRANDAL QUINTANA, JAVIER (Participante)
- FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Participante)
- Sanchez Garcia, Miguel Angel (Participante)
- HIERRO CANO, ADRIAN (Participante)
- PRIETO MARTIN, JOSE LUIS (Participante)
- PADILLA GONZALEZ, ISIDORO (Participante)
- Gacevic, Zarko (Participante)
- Martínez Rodrigo, Javier (Participante)
- Notzel, Richard (Participante)
- Calle Gómez, Fernando (Participante)
Ejecución: 01-09-2009 - 31-08-2012
Tipo: Internacional
Importe financiado: 800650,00 Euros.
- iMarina
Nanohilos basados en GaN para sistemas de información cuántica y circuitos digitales
- FERNANDO SAAVEDRA, AMALIA LUISA (Participante)
- HERRANZ FEITO, MIGUEL (Investigador/a)
- Sanchez Garcia, Miguel Angel (Investigador principal (IP))
- FOTEINOPOULOU, AIKATERINI (Participante)
- Gacevic, Zarko (Participante)
- Calleja Pardo, Enrique (Participante)
- KARAGIANNIS, NIKOLAOS (Participante)
- LASO CARBAJO, MANUEL (Participante)
Ejecución: 01-01-2019 - 31-07-2022
Tipo: Nacional
Importe financiado: 193963,00 Euros.
- iMarina
Nanoestructuras de semiconductores como componentes par ala información cuántica
- Enrique Calleja Pardo (Investigador principal (IP))
- MONTES BAJO, MIGUEL (Investigador/a)
Ejecución: 01-01-2006 - 01-01-2009
- iMarina
Nanoestructura de Semiconductores como Componentes para La Información Cuántica
- FERNANDEZ GARRIDO, SERGIO (Participante)
- GRACIA VERANO, VICTOR (Investigador principal (IP))
- CERUTTI CERUTTI, LAURENT (Investigador principal (IP))
- RISTIC RISTIC, JELENA (Investigador principal (IP))
- SANZ MONASTERIO, MIKEL (Investigador principal (IP))
- HIERRO CANO, ADRIAN (Participante)
- MONTES BAJO, MIGUEL (Participante)
- FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Participante)
- Calleja Pardo, Enrique (Investigador principal (IP))
Ejecución: 01-12-2005 - 01-01-2010
Tipo: Regional
- iMarina
Materiales y dispositivos optoelectrónicos basados en nitruros del grupo- III
- Calleja Pardo, Enrique (Investigador principal (IP))
Ejecución: 19-12-2019 - 31-12-2021
- iMarina
Instalación/Actuación: Central de Tecnología del ISOM
- Calleja Pardo, Enrique (Investigador principal (IP))
Ejecución: 13-11-2008 - 15-10-2009
Tipo: Nacional
- iMarina
InDaN and AIGaN semi-polar and non-polar pseudo-substrates made by Molecular Beam Epitaxy by ordered coalescence of nanocrystals
- Calleja Pardo, Enrique (Investigador principal (IP))
Ejecución: 01-01-2018 - 15-09-2022
- iMarina
High quality and intrinsic Properties of InN and indium rich Nitride Alloys
- Sanchez Garcia, Miguel Angel (Investigador principal (IP))
- Calle Gómez, Fernando (Participante)
- Calleja Pardo, Enrique (Participante)
Ejecución: 01-10-2008 - 30-09-2012
Tipo: Internacional
Importe financiado: 388526,00 Euros.
- iMarina
nxGa1-xN layers, nanowires, and nanodots on Silicon for clean energy applications
- Calleja Pardo, Enrique (Director)
- Gacevic, Zarko (Director) Doctorando: Aseev, Pavel
1/1/2017
- iMarina
Investigations on III-nitrides nanostructures: application to renewable energies and bio-sensing
- Calleja Pardo, Enrique (Director)
- Gacevic, Zarko (Director) Doctorando: Soto Rodriguez, Paul Eduardo David
1/1/2016
- iMarina
Growth and characterization of group-iii nitride nanocolumnar structures - crecimiento y caracterización de estructuras nanocolumnares de nitruros dle grupo iii
- Enrique Calleja Pardo (Director) Doctorando: Jelena Ristic
1/1/2006
- iMarina
Growth and characterization of gan/aln non-polar pseudo-substrates
- Calleja Pardo, Enrique (Director) Doctorando: Fernando Saavedra, Amalia Luisa
1/1/2021
- iMarina
Fabricación, caracterización y aplicaciones de detectores de UV basados en AlGaN.
- Muñoz Merino, Elías (Director)
- Calleja Pardo, Enrique (Director) Doctorando: PAU VIZCAINO, José Luis
1/1/2003
- iMarina
Espejos de Braga de AlGaN/GaN crecidos por Epitaxia de Haces Moleculares para Dispositivos Optoelectrónicos de Cavidad Resonante
- Enrique Calleja Pardo (Director)
- Fernando Calle Gómez (Director) Doctorando: Fernández Ruano, Susana María
1/1/2004
- iMarina
Crecimiento, fabricación y caracterización de diodos electroluminiscentes basados en pozos cuánticos de InGaN
- Enrique Calleja Pardo (Director) Doctorando: Fernando Bernabé Naranjo Vega
1/6/2003
- iMarina
Crecimiento y fabricación de transistores HEMT de AlGaN/GaN por epitaxia de haces moleculares
- Enrique Calleja Pardo (Director) Doctorando: Ana Jimenez Martín
1/1/2003
- iMarina
Crecimiento y caracterización de nitruros del grupo III sobre Si (111) por epitaxia de haces moleculares.
- Calleja Pardo, Enrique (Director) Doctorando: SANCHEZ GARCIA, Miguel Angel
1/1/2000
- iMarina
Este/a investigador/a no tiene patentes o licencias de software.
Perfiles de investigador/a
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ORCID
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Publons
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Scopus Author ID
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Dialnet id