Calleja Pardo, Enrique enrique.calleja@upm.es
Publications
- Articles 276
- Books 0
- Book chapters 2
- Conferences 172
- Working papers 0
- Technical reports 0
- Research projects 19
- Supervised theses 14
- Patent or software license 0
pn Junction applications and transport properties in polysilicon rods
- Criado A
- Calleja E
- Martinez J
- Piqueras J
- Muñoz E
Solid-State Electronics (p. 693-700) - 1/1/1979
10.1016/0038-1101(79)90077-7 View at source
- ISSN 00381101
Argon-ion bombardment effects on the electrical characteristics of platinum-silicon schottky diodes
- Garrido J
- Calleja E
- Piqueras J
Electronics Letters (p. 815-816) - 6/12/1979
10.1049/el:19790579 View at source
- ISSN 00135194
Resonant tunnelling in thermally degenerated molybdenum and platinum silicon Schottky diodes
- Martinez J
- Calleja E
- Piqueras J
Physica Status Solidi A-Applications And Materials Science (p. 277-286) - 1/1/1980
10.1002/pssa.2210600133 View at source
- ISSN 00318965
Thermal degeneration of Mo and Pt silicon Schottky diodes
- Calleja E
- Garrido J
- Piqueras J
- Martinez A
Solid-State Electronics (p. 591-598) - 1/1/1980
10.1016/0038-1101(80)90041-6 View at source
- ISSN 00381101
Resonant tunneling spectroscopy in Schottky diodes
- Calleja E
- Piqueras J
Journal Of Applied Physics (p. 3980-3983) - 1/12/1980
10.1063/1.328182 View at source
- ISSN 00218979
Current/voltage characteristics of degenerated molybdenum and platinum schottky diodes
- Martinez J
- Calleja E
- Piqueras J
Electronics Letters (p. 183-185) - 28/2/1980
10.1049/el:19800132 View at source
- ISSN 00135194
DEEP CENTERS INTRODUCED BY ARGON ION-BOMBARDMENT IN N-TYPE SILICON
- GARRIDO, J
- CALLEJA, E
- PIQUERAS, J;
Solid-State Electronics (p. 1121-1126) - 1/1/1981
10.1016/0038-1101(81)90180-5 View at source
- ISSN 00381101
Effect of vacuum annealing cleaning on electrical characteristics of GaAs1−x Px-Mo schottky diodes
- Calleja E
- Piqueras J
Electronics Letters (p. 37-39) - 8/1/1981
10.1049/el:19810028 View at source
- ISSN 00135194
ELECTRON TRAPS IN GAAS1-XPX ALLOYS
- CALLEJA, E
- MUNOZ, E
- GARCIA, F;
Applied Physics Letters (p. 528-530) - 1/1/1983
10.1063/1.93993 View at source
- ISSN 00036951
ELECTROPLATED AU-GAAS1-XPX AND AU-GA1-XALXAS SCHOTTKY BARRIERS
- LOPEZCORONADO, M
- AGUILAR, M
- MARTINEZ, MT
- CALLEJA, E
- MUNOZ, E;
Electronics Letters (p. 666-668) - 18/8/1983
10.1049/el:19830454 View at source
- ISSN 00135194
This researcher has no books.
Ga(in)N nanowires grown by molecular beam epitaxy: From quantum light emitters to nanotransistors
- Gačević Ž
- Calleja E
Novel Compound Semiconductor Nanowires: Materials, Devices, And Applications (p. 319-364) - 1/1/2017
PRESSURE EFFECTS ON THE PROPERTIES OF DX CENTERS IN SI-DOPED GAAS AND ALXGA1-XAS ALLOYS
- CALLEJA, E
- GARCIA, F
- MUNOZ, E
- MOONEY, PM
- MORGAN, TN
- WRIGHT, SL;
20th International Conference On The Physics Of Semiconductors, Vols 1-3 (p. 513-516) - 1/1/1990
- iMarina
INCORPORATION OF BE INTO INXGA1-XAS (0.004-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.17) STUDIED BY PHOTOLUMINESCENCE AND RESONANT RAMAN-SPECTROSCOPY OF LOCAL VIBRATIONAL-MODES
- ALVAREZ, AL
- WAGNER, J
- CALLE, F
- MAIER, M
- GUTIERREZ, G
- SACEDON, A
- CALLEJA, E
- MUNOZ, E;
Materials Science Forum (p. 241-245) - 1/1/1994
10.4028/www.scientific.net/msf.143-147.241 View at source
- ISSN 02555476
Dislocation distribution in graded composition InGaAs layers
- Molina S
- Gutierrez G
- Sacedon A
- Calleja E
- Garcia R
Materials Research Society Symposium - Proceedings (p. 223-228) - 1/1/1994
- ISSN 02729172
- iMarina
Time-resolved piezoelectric nonlinearities and exciton dynamics in strained [111] p-i-n multiple quantum well structures
- Harken D
- Huang X
- McCallum D
- Smirl A
- Sanchez-Rojas J
- Sacedon A
- Munoz E
- Calleja E
(p. 364-365) - 1/12/1994
- iMarina
Piezoelectric optical nonlinearities in strained [111] InGaAs-GaAs multiple quantum well p-i-n structures
- Smirl A
- Huang X
- Harken D
- Cartwright A
- McCallum D
- Sanchez-Rojas J
- Sacedon A
- Gonzalez-Sanz F
- Calleja E
- Munoz E
(p. 135-137) - 1/12/1994
- iMarina
Field control in piezoelectric [111]- oriented InGaAs/GaAs MQW and superlattice devices
- Sanchez-Rojas J
- Munoz E
- Sacedon A
- Valtuena J
- Izpura I
- Calleja E
(p. 506-515) - 1/12/1995
Non-uniform strain relaxation in InxGa1-xAs layers
- Alvarez, AL
- Calle, F
- Sacedon, A
- Calleja, E
- Munoz, E
- Garcia, R
- Gonzalez, L
- Gonzalez, Y
- Colson, HG
- Kidd, P
- Beanland, R
- Goodhew, P
Solid-State Electronics (p. 647-651) - 1/1/1996
10.1016/0038-1101(95)00380-0 View at source
- ISSN 00381101
Design and characterization of two color GaAs based quantum well infrared detector structures
- Sanchez-Rojas J
- Guzman A
- Munoz E
- Sanchez J
- Calleja E
- Sanz-Hervas A
- Villar C
- Aguilar M
- Montojo M
- Vergara G
- Gomez L
Advanced Workshop On Frontiers In Electronics, Proceedings, Wofe (p. 65-71) - 1/1/1997
- iMarina
Structural characterization of GaN/AlN/Si (111)
- Molina, SI
- Sanchez, AM
- Sanchez-Garcia, MA
- Calleja, E
- Calle, F
- Garcia, R
Electron Microscopy 1998, Vol 3 (p. 389-390) - 1/1/1998
- iMarina
This researcher has no working papers.
This researcher has no technical reports.
Extensión de medida de catodoluminiscencia(CL) al rango infrarrojo en microcospio de barrido electrónico FESEM
- Calleja Pardo, Enrique (Investigador principal (IP))
- Sanchez Garcia, Miguel Angel (Participante)
- FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Participante)
- HIERRO CANO, ADRIAN (Participante)
Period: 01-01-2013 - 31-12-2015
Type of funding: National
- iMarina
ADECUACIÓN DE UN REACTOR DE EPITAXIA DE HACES MOLECULARES (MBE) PARA EL CRECIMIENTO EPITAXIAL DE NANOESTRUCTURAS SEMICONDUCTORAS
- Calleja Pardo, Enrique (Investigador principal (IP))
- Sanchez Garcia, Miguel Angel (Participante)
Period: 01-01-2013 - 31-12-2015
Type of funding: National
Amount of funding: 22105,00 Euros.
- iMarina
Towards p-type conductivity in In0.5Ga0.5N nanocolumns on a Si (100) substrate with GaN buffer layers
- Calleja Pardo, Enrique (Investigador principal (IP))
- XIE, MENGYAO (Becario/a)
- Sanchez Garcia, Miguel Angel (Participante)
Period: 15-06-2015 - 14-06-2017
Type of funding: International
Amount of funding: 170121,60 Euros.
- iMarina
Crecimiento por Epitaxia de Haces Moleculares de capas finas y nanoestructuras ordenadas de InGaN para dispositivos fotovoltaicos, sensores y generadores de hidrógeno
- Calleja Pardo, Enrique (Investigador principal (IP))
- Sanchez Garcia, Miguel Angel (Participante)
- Gacevic, Zarko (Participante)
- COBOS ARRIBAS, PEDRO (Participante)
Period: 01-01-2016 - 31-12-2018
Type of funding: National
Amount of funding: 204490,00 Euros.
- iMarina
InDaN and AIGaN semi-polar and non-polar pseudo-substrates made by Molecular Beam Epitaxy by ordered coalescence of nanocrystals
- Calleja Pardo, Enrique (Investigador principal (IP))
Period: 01-01-2018 - 15-09-2022
- iMarina
Nanohilos basados en GaN para sistemas de información cuántica y circuitos digitales
- FERNANDO SAAVEDRA, AMALIA LUISA (Participante)
- HERRANZ FEITO, MIGUEL (Investigador/a)
- Sanchez Garcia, Miguel Angel (Investigador principal (IP))
- FOTEINOPOULOU, AIKATERINI (Participante)
- Gacevic, Zarko (Participante)
- Calleja Pardo, Enrique (Participante)
- KARAGIANNIS, NIKOLAOS (Participante)
- LASO CARBAJO, MANUEL (Participante)
Period: 01-01-2019 - 31-07-2022
Type of funding: National
Amount of funding: 193963,00 Euros.
- iMarina
GaN-based nanowires as building blocks for quantum information systems and digital electronic circuits (RTI2018-097338-B-I00)
- FOTEINOPOULOU, AIKATERINI (Investigador/a)
- Miguel Angel Sanchez Garcia
- Manuel Laso Carbajo
- Enrique Calleja Pardo
- Nikos Karayiannis
- Zarko Gacevic
- Aikaterini Foteinopoulou (Investigador principal (IP))
- KARAGIANNIS, NIKOLAOS (Investigador/a)
Period: 01-01-2019 - 31-12-2021
Type of funding: National
Amount of funding: 160300,00 Euros.
- iMarina
Materiales y dispositivos optoelectrónicos basados en nitruros del grupo- III
- Calleja Pardo, Enrique (Investigador principal (IP))
Period: 19-12-2019 - 31-12-2021
- iMarina
A. Develop process to make full visible spectrum display emitter layer using nanocolumns. B. Develop process to make UVA emitting arrays using nanocolumns
- Calleja Pardo, Enrique (Investigador principal (IP))
- Sanchez Garcia, Miguel Angel (Investigador principal (IP))
Period: 06-10-2020 - 03-11-2021
- iMarina
Aportación al estudio de estructuras pseudomórficas y metamórficas de InGaAs
- Calleja Pardo, Enrique (Director) Doctorando: SACEDON AYUSO, Ana
1/1/1996
- iMarina
Contribución al estudio de defectos en capas epitaxiales de Gan. Aplicaciones a dispositivos optoelectronicos
- Calleja Pardo, Enrique (Director) Doctorando: SANCHEZ SANZ, Fernando José
1/1/1999
- iMarina
Crecimiento y caracterización de nitruros del grupo III sobre Si (111) por epitaxia de haces moleculares.
- Calleja Pardo, Enrique (Director) Doctorando: SANCHEZ GARCIA, Miguel Angel
1/1/2000
- iMarina
Fabricación, caracterización y aplicaciones de detectores de UV basados en AlGaN.
- Muñoz Merino, Elías (Director)
- Calleja Pardo, Enrique (Director) Doctorando: PAU VIZCAINO, José Luis
1/1/2003
- iMarina
Crecimiento y fabricación de transistores HEMT de AlGaN/GaN por epitaxia de haces moleculares
- Enrique Calleja Pardo (Director) Doctorando: Ana Jimenez Martín
1/1/2003
- iMarina
Crecimiento, fabricación y caracterización de diodos electroluminiscentes basados en pozos cuánticos de InGaN
- Enrique Calleja Pardo (Director) Doctorando: Fernando Bernabé Naranjo Vega
1/6/2003
- iMarina
Espejos de Braga de AlGaN/GaN crecidos por Epitaxia de Haces Moleculares para Dispositivos Optoelectrónicos de Cavidad Resonante
- Enrique Calleja Pardo (Director)
- Fernando Calle Gómez (Director) Doctorando: Fernández Ruano, Susana María
1/1/2004
- iMarina
Crecimiento y caracterización de estructuras nanocolumnares de nitruros DLE grupo III.
- Calleja Pardo, Enrique (Director) Doctorando: RISTIC, Jelena
1/1/2006
- iMarina
Growth and characterization of group-iii nitride nanocolumnar structures - crecimiento y caracterización de estructuras nanocolumnares de nitruros dle grupo iii
- Enrique Calleja Pardo (Director) Doctorando: Jelena Ristic
1/1/2006
- iMarina
Crecimiento de nitruros del grupo III por epitaxia de haces moleculares para la fabricación de diodos electroluminiscentes en el rango visible-ultravioleta
- Enrique Calleja Pardo (Director) Doctorando: Sergio Fernández Garrido
1/1/2009
- iMarina
This researcher has no patents or software licenses.
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