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Pampillon Arce, Maria Angela marian.pampillon@uam.es

Física aplicada / Universidad Autónoma de Madrid

Actividades

Advanced graphene-based transparent conductive electrodes for photovoltaic applications

  • Fernández S
  • Boscá A
  • Pedrós J
  • Inés A
  • Fernández M
  • Arnedo I
  • González JP
  • de la Cruz M
  • Sanz D
  • Molinero A
  • Fandan RS
  • Pampillón Má
  • Calle F
  • Gandía JJ
  • Cárabe J
  • Martínez J
... Ver más Contraer

Micromachines - 1/6/2019

10.3390/mi10060402 Ver en origen

  • ISSN 2072666X

Effects of Gd2O3 Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs

  • Gao, Z.
  • Romero, M. F.
  • Redondo-Cubero, A.
  • Pampillon, M. A.
  • San Andres, E.
  • Calle, F.;

Ieee Electron Device Letters (p. 611-614) - 1/5/2017

10.1109/led.2017.2682795 Ver en origen

  • ISSN 07413106

High-k gadolinium scandate on Si obtained by high pressure sputtering from metal targets and in-situ plasma oxidation

  • Pampillón MA
  • San Andrés E
  • Feijoo PC
  • Fierro JLG

Semiconductor Science And Technology - 10/2/2017

10.1088/1361-6641/aa58cc Ver en origen

  • ISSN 13616641

Thermal Assessment of AlGaN/GaN MOS-HEMTs on Si Substrate Using Gd2O3 as Gate Dielectric

  • Gao, Zhan
  • Fatima Romero, Maria
  • Angela Pampillon, Maria
  • San Andres, Enrique
  • Calle, Fernando;

Ieee Transactions On Electron Devices (p. 2729-2734) - 1/7/2016

10.1109/ted.2016.2564301 Ver en origen

  • ISSN 00189383

Scavenging effect on plasma oxidized Gd2O3 grown by high pressure sputtering on Si and InP substrates

  • Pampillón MA
  • Feijoo PC
  • San Andrés E
  • García H
  • Castán H
  • Dueñas S

Semiconductor Science And Technology - 1/3/2015

10.1088/0268-1242/30/3/035023 Ver en origen

  • ISSN 13616641

Nano-laminate vs. direct deposition of high permittivity gadolinium scandate on silicon by high pressure sputtering

  • Feijoo, P. C.
  • Pampillon, M. A.
  • San Andres, E.
  • Fierro, J. L. G.;

Thin Solid Films (p. 62-66) - 30/10/2015

10.1016/j.tsf.2015.07.045 Ver en origen

  • ISSN 00406090

High-k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors

  • Wirths, Stephan
  • Stange, Daniela
  • Pampillon, Maria-Angela
  • Tiedemann, Andreas T.
  • Mussler, Gregor
  • Fox, Alfred
  • Breuer, Uwe
  • Baert, Bruno
  • San Andres, Enrique
  • Nguyen, Ngoc D.
  • Hartmann, Jean-Michel
  • Ikonic, Zoran
  • Mantl, Siegfried
  • Buca, Dan;
... Ver más Contraer

Acs Applied Materials & Interfaces (p. 62-67) - 1/1/2015

10.1021/am5075248 Ver en origen

  • ISSN 19448244

Gadolinium scandate by high-pressure sputtering for future generations of high-kappa dielectrics

  • Feijoo, P. C.
  • Pampillon, M. A.
  • Andres, E. San
  • Fierro, J. L. G.;

Semiconductor Science And Technology - 1/8/2013

10.1088/0268-1242/28/8/085004 Ver en origen

  • ISSN 13616641

Interface quality of Sc2O3 and Gd2O3 films based metal-insulator-silicon structures using Al, Pt, and Ti gates: Effect of buffer layers and scavenging electrodes

  • Gómez A
  • Castán H
  • García H
  • Dueñas S
  • Bailón L
  • Pampillón MA
  • Feijoo PC
  • San Andrés E
... Ver más Contraer

Journal Of Vacuum Science And Technology B: Nanotechnology And Microelectronics - 1/1/2013

10.1116/1.4768678 Ver en origen

  • ISSN 21662746

High pressure sputtering as a viable technique for future high permittivity dielectric on III-V integration: GdOx on InP demonstration

  • Pampillón MA
  • Cañadilla C
  • Feijoo PC
  • San Andrés E
  • Del Prado A

Journal Of Vacuum Science And Technology B: Nanotechnology And Microelectronics - 1/1/2013

10.1116/1.4771970 Ver en origen

  • ISSN 21662746

Este/a investigador/a no tiene libros.

Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets Introduction

  • Arce, M. A. P.;

Magnetic Nanoparticles: A Study By Synchrotron Radiation And Rf Transverse Susceptibility (p. 1-20) - 1/1/2017

10.1007/978-3-319-66607-5 Ver en origen

  • ISSN 21905053

Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets Conclusions and Future Work

  • Pampillon Arce, Maria Angela;

Magnetic Nanoparticles: A Study By Synchrotron Radiation And Rf Transverse Susceptibility (p. 155-157) - 1/1/2017

10.1007/978-3-319-66607-5_9 Ver en origen

  • ISSN 21905053

Characterization Techniques

  • Pampillon Arce, Maria Angela;

Magnetic Nanoparticles: A Study By Synchrotron Radiation And Rf Transverse Susceptibility (p. 41-62) - 1/1/2017

10.1007/978-3-319-66607-5_3 Ver en origen

  • ISSN 21905053

Thermal Oxidation of Gd2O3

  • Pampillon Arce, Maria Angela;

Magnetic Nanoparticles: A Study By Synchrotron Radiation And Rf Transverse Susceptibility (p. 63-75) - 1/1/2017

10.1007/978-3-319-66607-5_4 Ver en origen

  • ISSN 21905053

Gadolinium Scandate

  • Pampillon Arce, Maria Angela;

Magnetic Nanoparticles: A Study By Synchrotron Radiation And Rf Transverse Susceptibility (p. 109-124) - 1/1/2017

10.1007/978-3-319-66607-5_6 Ver en origen

  • ISSN 21905053

Interface Scavenging

  • Pampillon Arce, Maria Angela;

Magnetic Nanoparticles: A Study By Synchrotron Radiation And Rf Transverse Susceptibility (p. 125-140) - 1/1/2017

10.1007/978-3-319-66607-5_7 Ver en origen

  • ISSN 21905053

Gd2O3 on InP Substrates

  • Pampillon Arce, Maria Angela;

Magnetic Nanoparticles: A Study By Synchrotron Radiation And Rf Transverse Susceptibility (p. 141-153) - 1/1/2017

10.1007/978-3-319-66607-5_8 Ver en origen

  • ISSN 21905053

Fabrication Techniques

  • Pampillon Arce, Maria Angela;

Magnetic Nanoparticles: A Study By Synchrotron Radiation And Rf Transverse Susceptibility (p. 21-39) - 1/1/2017

10.1007/978-3-319-66607-5_2 Ver en origen

  • ISSN 21905053

Plasma Oxidation of Gd2O3 and Sc2O3

  • Pampillon Arce, Maria Angela;

Magnetic Nanoparticles: A Study By Synchrotron Radiation And Rf Transverse Susceptibility (p. 77-108) - 1/1/2017

10.1007/978-3-319-66607-5_5 Ver en origen

  • ISSN 21905053

Thermal stability study of AlGaN/GaN MOS-HEMTs using Gd2O3 as gate dielectric

  • Gao, Z
  • Romero, M F
  • Pampillon, M A
  • San Andres, E
  • Calle, F

Proceedings Of The 2013 Spanish Conference On Electron Devices (Cde 2013) (p. 78-+) - 16/4/2015

10.1109/cde.2015.7087508 Ver en origen

  • ISSN 21634971

High pressure sputtering for high-k dielectric deposition. Is it worth trying?

  • San Andrés E
  • Feijoo PC
  • Pampillón MA
  • Lucía ML
  • Del Prado A

Ecs Transactions (p. 27-39) - 11/5/2014

10.1149/06102.0027ecst Ver en origen

  • ISSN 19386737

Electrical characterization of gadolinium oxide deposited by high pressure sputtering with in situ plasma oxidation

  • Angela Pampillon, Maria
  • Carlos Feijoo, Pedro
  • San Andres, Enrique;

Microelectronic Engineering (p. 236-239) - 25/6/2013

10.1016/j.mee.2013.03.094 Ver en origen

  • ISSN 01679317

High permittivity gadolinium oxide deposited on indium phosphide by high-pressure sputtering without interface treatments

  • San Andres, Enrique
  • Angela Pampillon, Maria
  • Carlos Feijoo, Pedro
  • Perez, Raul
  • Canadilla, Carmina;

Microelectronic Engineering (p. 223-226) - 25/6/2013

10.1016/j.mee.2013.03.133 Ver en origen

  • ISSN 01679317

Plasma oxidation of metallic gadolinium deposited on silicon by high pressure sputtering as high permittivity dielectric

  • Pampillon M
  • Feijoo P
  • Andres E
  • Fierro J

9th Spanish Conference On Electron Devices, Cde 2013 (p. 5-8) - 8/4/2013

10.1109/cde.2013.6481328 Ver en origen

  • ISSN 9781467346689

Gadolinium scandate by high pressure sputtering as a high-k dielectric

  • Feijoo, P. C.
  • Pampillon, M. A.
  • Andres, E. San;

9th Spanish Conference On Electron Devices, Cde 2013 (p. 17-20) - 8/4/2013

10.1109/cde.2013.6481331 Ver en origen

  • ISSN 21634971

Electrical study of ScO-based MIS structures using Al and Ti as gate electrodes

  • Garcia, H
  • Castan, H
  • Duenas, S
  • Bailon, L
  • Feijoo, P C
  • Pampillon, M A
  • San Andres, E
... Ver más Contraer

9th Spanish Conference On Electron Devices, Cde 2013 (p. 285-288) - 8/4/2013

10.1109/cde.2013.6481398 Ver en origen

  • ISSN 21634971

Towards high-k integration with III-V channels: Interface optimization of high pressure sputtered gadolinium oxide on indium phospide

  • San Andres, E
  • Pampillon, M A
  • Canadilla, C
  • Feijoo, P C
  • del Prado, A

9th Spanish Conference On Electron Devices, Cde 2013 (p. 25-28) - 8/4/2013

10.1109/cde.2013.6481333 Ver en origen

  • ISSN 21634971

Plasma oxidation of metallic gadolinium deposited on silicon by high pressure sputtering as high permittivity dielectric

  • Pampillon, M. A.
  • Feijoo, P. C.
  • Andres, E. San
  • Fierro, J. L. G.;

Proceedings Of The 2013 Spanish Conference On Electron Devices (Cde 2013) (p. 5-8) - 1/1/2013

  • ISSN 21634971
  • iMarina

Towards metal electrode interface scavenging of rare-earth scandates: A Sc2O3 and Gd2O3 study

  • Pampillón MA
  • Feijoo PC
  • Andrés ES
  • Toledano-Luque M
  • Del Prado A
  • Blázquez AJ
  • Lucía ML
... Ver más Contraer

Microelectronic Engineering (p. 1357-1360) - 1/7/2011

10.1016/j.mee.2011.03.025 Ver en origen

  • ISSN 01679317

Este/a investigador/a no tiene documentos de trabajo.

Este/a investigador/a no tiene informes técnicos.

Ingeniería cuántica para la integración de células solares iii-v sobre silicio

  • Hernandez Muñoz, Maria Jesus (Investigador/a)
  • PAMPILLON ARCE, MARIA ANGELA (Investigador/a)
  • Kaganer, Vladimir (Investigador/a)
  • Volkov, Roman (Investigador/a)
  • Borgardt, Nikolai (Investigador/a)
  • VALLÉS VILA, TOMÁS (Investigador/a)
  • RODRÍGUEZ MARTÍ, PEDRO (Investigador/a)
  • Brandt, Oliver (Investigador/a)
  • Lähnemann, Jonas (Investigador/a)
  • Cervera Goy, Manuel (Investigador/a)
  • Garcia Carretero, Basilio Javier (Investigador principal (IP))
  • FERNANDEZ GARRIDO, SERGIO (Investigador principal (IP))
... Ver más Contraer

Ejecución: 01-09-2021 - 31-08-2025

Tipo: Nacional

Importe financiado: 166980,00 Euros.

  • iMarina

Integración y puesta en marcha del primer telescopio de gran tamaño y otros elementos clave del proyecto ESFRI CTA: Contribuciones del grupo UCM-ELEC.

  • Franco Peláez, Francisco Javier (Investigador principal (IP))
  • Miranda Pantoja, José Miguel (Investigador principal (IP))
  • PAMPILLON ARCE, MARIA ANGELA (Investigador/a)

Ejecución: 01-01-2016 - 31-12-2018

Tipo: Europeo

  • iMarina

Fabricación de dispositivos detectores de infrarrojo próximo mediante Si super saturado con metales de transición.

  • González Díaz, Germán (Investigador principal (IP))
  • PAMPILLON ARCE, MARIA ANGELA (Investigador/a)

Ejecución: 01-01-2014 - 31-12-2017

Tipo: Nacional

  • iMarina

Este/a investigador/a no tiene tesis dirigidas.

Método de fabricación de estructuras de puerta de transistores MOSFET sobre semiconductores III-V.

  • PAMPILLON ARCE, MARIA ANGELA (Inventores/autores/obtentores)

22/6/2012

  • iMarina
Última actualización de los datos: 27/08/24 19:19