Naranjo Vega, Fernando Bernabé

Actividades

Influence of the AlN interlayer thickness on the photovoltaic properties of in-rich AlInN on Si heterojunctions deposited by RF sputtering

  • Valdueza-Felip, S.
  • Núñez-Cascajero, A.
  • Blasco, R.
  • Montero, D.
  • Grenet, L.
  • De La Mata, M.
  • Fernández, S.
  • Rodríguez-De Marcos, L.
  • Molina, S.I.
  • Olea, J.
  • Naranjo, F.B.
... Ver más Contraer

AIP Advances - 2018

Editor: American Institute of Physics Inc.

10.1063/1.5041924 Ver en origen

  • ISSN/ISBN 2158-3226

Influence of the AlInN Thickness on the Photovoltaic Characteristics of AlInN on Si Solar Cells Deposited by RF Sputtering

  • Blasco, R.
  • Núñez-Cascajero, A.
  • Jiménez-Rodríguez, M.
  • Montero, D.
  • Grenet, L.
  • Olea, J.
  • Naranjo, F.B.
  • Valdueza-Felip, S.
... Ver más Contraer

Physica Status Solidi (A) Applications and Materials Science - 2019

Editor: Wiley-VCH Verlag

10.1002/pssa.201800494 Ver en origen

  • ISSN/ISBN 1862-6319

Influence of substrate biasing on the growth of c-axis oriented AlN thin films by RF reactive sputtering in pure nitrogen

  • Monteagudo-Lerma, L.
  • Naranjo, F.B.
  • González-Herráez, M.
  • Fernández, S.

Physica Status Solidi (C) Current Topics in Solid State Physics (p. 1074-1078) - 2012

10.1002/pssc.201100196 Ver en origen

  • ISSN/ISBN 1862-6351

Influence of deposition conditions on nanocrystalline InN layers synthesized on Si(1 1 1) and GaN templates by RF sputtering

  • Valdueza-Felip, S.
  • Naranjo, F.B.
  • González-Herráez, M.
  • Lahourcade, L.
  • Monroy, E.
  • Fernández, S.

Journal of Crystal Growth (p. 2689-2694) - 2010

Editor: Elsevier B.V.

10.1016/j.jcrysgro.2010.05.036 Ver en origen

  • ISSN/ISBN 0022-0248

InN-based optical waveguides developed by RF sputtering for all-optical applications at 1.55 μm

  • Monteagudo-Lerma, L.
  • Naranjo, F.B.
  • Jiménez-Rodríguez, M.
  • Postigo, P.A.
  • Barrios, E.
  • Corredera, P.
  • González-Herraéz, M.
... Ver más Contraer

IEEE Photonics Technology Letters (p. 1857-1860) - 2015

Editor: Institute of Electrical and Electronics Engineers Inc.

10.1109/lpt.2015.2443873 Ver en origen

  • ISSN/ISBN 1041-1135

In-rich AlxIn1-xN grown by RF-sputtering on sapphire: From closely-packed columnar to high-surface quality compact layers

  • Núñez-Cascajero, A.
  • Valdueza-Felip, S.
  • Monteagudo-Lerma, L.
  • Monroy, E.
  • Taylor-Shaw, E.
  • Martin, R.W.
  • González-Herráez, M.
  • Naranjo, F.B.
... Ver más Contraer

Journal of Physics D: Applied Physics - 2017

Editor: Institute of Physics Publishing

10.1088/1361-6463/aa53d5 Ver en origen

  • ISSN/ISBN 1361-6463

Improvement of InN layers deposited on Si(111) by RF sputtering using a low-growth-rate InN buffer layer

  • Valdueza-Felip, S.
  • Ibáñez, J.
  • Monroy, E.
  • González-Herráez, M.
  • Artús, L.
  • Naranjo, F.B.

Thin Solid Films (p. 2805-2809) - 2012

10.1016/j.tsf.2011.12.034 Ver en origen

  • ISSN/ISBN 0040-6090

III-nitride-based waveguides for ultrafast all-optical signal processing at 1.55 μm

  • Monteagudo-Lerma, L.
  • Naranjo, F.B.
  • Valdueza-Felip, S.
  • Jiménez-Rodríguez, M.
  • Monroy, E.
  • Postigo, P.A.
  • Corredera, P.
  • González-Herráez, M.
... Ver más Contraer

Physica Status Solidi (A) Applications and Materials Science (p. 1269-1275) - 2016

Editor: Wiley-VCH Verlag

10.1002/pssa.201532810 Ver en origen

  • ISSN/ISBN 1862-6319

III-Nitrides Resonant Cavity Photodetector Devices

  • Fernández, S.
  • Naranjo, F.B.
  • Sánchez-García, M.Á.
  • Calleja, E.

Materials (p. 1-12) - 1/1/2020

Editor: MDPI AG

10.3390/ma13194428 Ver en origen

  • ISSN 19961944
  • ISSN/ISBN 1996-1944

High-surface-quality nanocrystalline InN layers deposited on GaN templates by RF sputtering

  • Valdueza-Felip, S.
  • Naranjo, F.B.
  • González-Herráez, M.
  • Lahourcade, L.
  • Monroy, E.
  • Fernández, S.

Physica Status Solidi (A) Applications and Materials Science (p. 65-69) - 2011

10.1002/pssa.200925636 Ver en origen

  • ISSN/ISBN 1862-6300

Este/a investigador/a no tiene libros.

Este/a investigador/a no tiene capítulos de libro.

Sub-250 fs, 650 kW Peak Power Harmonic Mode-Locked Fiber Laser with InN-based SESAM

  • Gallazzi, F.
  • Jimenez-Rodriguez, M.
  • Monroy, E.
  • Corredera, P.
  • González-Herráez, M.
  • Naranjo, F.B.
  • Ania-Castañón, J.D.
... Ver más Contraer

European Conference on Optical Communication, ECOC (p. 1-3) - 2017

Editor: Institute of Electrical and Electronics Engineers Inc.

10.1109/ecoc.2017.8345895 Ver en origen

  • ISSN/ISBN 9781538656242

Sub-200 fs mode-locked fiber laser with InN-based SESAM

  • Jime´nez-Rodri´guez, M.
  • Gallazzi, F.
  • Ania-Castaño´n, J.D.
  • Monroy, E.
  • González-Herráez, M.
  • Naranjo, F.B.

Optics InfoBase Conference Papers - 2017

Editor: OSA - The Optical Society

  • ISSN/ISBN 9781557528209

Study of high In-content AlInN deposition on p-Si(111) by RF-sputtering

  • Núñez-Cascajero, A.
  • Monteagudo-Lerma, L.
  • Valdueza-Felip, S.
  • Navío, C.
  • Monroy, E.
  • González-Herráez, M.
  • Naranjo, F.B.
... Ver más Contraer

Japanese Journal of Applied Physics - 2016

Editor: Japan Society of Applied Physics

10.7567/jjap.55.05fb07 Ver en origen

  • ISSN/ISBN 1347-4065

Study of absorption saturation in InN thin films through the Z-Scan technique at 1.55 μm

  • Jimenez-Rodriguez, M.
  • Monroy, L.
  • Nu´ñez-Cascajero, A.
  • Monroy, E.
  • González-Herráez, M.
  • Naranjo, F.B.

Optics InfoBase Conference Papers - 2018

Editor: OSA - The Optical Society

10.1364/noma.2018.nom3j.2 Ver en origen

  • ISSN/ISBN 9781557528209

Resonant Raman study of strain and composition in InGaN multiquantum wells

  • Lazić, S.
  • Calleja, J.M.
  • Naranjo, F.B.
  • Fernández, S.
  • Calleja, E.

Aip Conference Proceedings (p. 221-222) - 30/6/2005

10.1063/1.1994073 Ver en origen

  • ISSN 15517616
  • ISSN/ISBN 0094-243X

Resonant Raman scattering in strained and relaxed inxGa 1-xN/GaN multiple quantum wells

  • Lazić, S.
  • Calleja, J.M.
  • Naranjo, F.B.
  • Fernández, S.
  • Calleja, E.

Materials Science Forum (p. 19-24) - 1/1/2005

Editor: Trans Tech Publications Ltd

10.4028/0-87849-971-7.19 Ver en origen

  • ISSN 02555476
  • ISSN/ISBN 1662-9752

Plasma-assisted MBE growth of group-III nitrides: from basics to device applications

  • Sánchez-García, M.A.
  • Pau, J.L.
  • Naranjo, F.
  • Jiménez, A.
  • Fernández, S.
  • Ristic, J.
  • Calle, F.
  • Calleja, E.
  • Muñoz, E.
... Ver más Contraer

Materials Science And Engineering B-Advanced Functional Solid-State Materials (p. 189-196) - 30/5/2002

10.1016/s0921-5107(02)00049-1 Ver en origen

  • ISSN 09215107
  • ISSN/ISBN 0921-5107

Physical properties of InN for optically controlling the speed of light

  • Naranjo, F.B.
  • González-Herráez, M.
  • Fernández, H.
  • Solis, J.
  • Monroy, E.

Optics InfoBase Conference Papers - 2007

Editor: Optical Society of America (OSA)

10.1364/ipnra.2007.jtua7 Ver en origen

  • ISSN/ISBN 2162-2701

Novel photodetectors based on InGaN/GaN multiple quantum wells

  • Rivera, C.
  • Pau, J.L.
  • Naranjo, F.B.
  • Muñoz, E.

Physica Status Solidi A-Applications And Materials Science (p. 2658-2662) - 1/1/2004

Editor: Wiley-VCH Verlag

10.1002/pssa.200405019 Ver en origen

  • ISSN 00318965
  • ISSN/ISBN 0031-8965

Novel nitride - Based materials for nonlinear optical signal processing applications at 1.5 μm

  • Valdueza-Felip, S.
  • Naranjo, F.B.
  • González-Herráez, M.
  • Fernández, H.
  • Solis, J.
  • Fernández, S.
  • Guillot, F.
  • Monroy, E.
  • Grandal, J.
  • Sánchez-García, M.A.
... Ver más Contraer

2007 Ieee International Symposium On Intelligent Signal Processing, Wisp (p. 1-6) - 1/12/2007

10.1109/wisp.2007.4447511 Ver en origen

  • ISSN/ISBN 9781424408306

Este/a investigador/a no tiene documentos de trabajo.

Este/a investigador/a no tiene informes técnicos.

Este/a investigador/a no tiene proyectos de investigación.

Este/a investigador/a no tiene tesis dirigidas.

Este/a investigador/a no tiene patentes o licencias de software.

Última actualización de los datos: 24/04/24 13:12