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Naranjo Vega, Fernando Bernabé

Electrónica / Universidad de Alcalá

Actividades

MBE-grown high-quality (Al, Ga)N/GaN distributed Bragg reflectors for resonant cavity LEDs

  • Fernández, S.
  • Naranjo, F.B.
  • Calle, F.
  • Sánchez-García, M.A.
  • Calleja, E.
  • Vennegues, P.
  • Trampert, A.
  • Ploog, K.H.
... Ver más Contraer

Semiconductor Science And Technology (p. 913-917) - 1/11/2001

10.1088/0268-1242/16/11/305 Ver en origen

  • ISSN 13616641
  • ISSN/ISBN 0268-1242

Molecular beam epitaxy growth and doping of III-nitrides on Si(111): layer morphology and doping

  • Calleja, E.
  • Sánchez-García, M.A.
  • Calle, F.
  • Naranjo, F.B.
  • Muñoz, E.
  • Jahn, U.
  • Ploog, K.
  • Sánchez, J.
  • Calleja, J.M.
  • Saarinen, K.
  • Hautojärvi, P.
... Ver más Contraer

Materials Science And Engineering B-Advanced Functional Solid-State Materials (p. 2-8) - 22/5/2001

Editor: Elsevier BV

10.1016/s0921-5107(00)00721-2 Ver en origen

  • ISSN 09215107
  • ISSN/ISBN 0921-5107

From ultraviolet to green InGaN-Based conventional and resonant-cavity light-emitting diodes grown by molecular beam epitaxy

  • Naranjo, F.B.
  • Fernández, S.
  • Calle, F.
  • Sánchez-García, M.A.
  • Calleja, E.

Physica Status Solidi A-Applications And Materials Science (p. 341-347) - 1/1/2002

Editor: Wiley-VCH Verlag

10.1002/1521-396x(200208)192:2<341::aid-pssa341>3.0.co;2-y Ver en origen

  • ISSN 00318965
  • ISSN/ISBN 0031-8965

High-quality distributed Bragg reflectors for resonant-cavity light-emitting diode applications

  • Fernández, S.
  • Naranjo, F.B.
  • Calle, F.
  • Sánchez-García, M.A.
  • Calleja, E.
  • Vennéguès, P.

Physica Status Solidi A-Applications And Materials Science (p. 389-393) - 1/1/2002

Editor: Wiley-VCH Verlag

10.1002/1521-396x(200208)192:2<389::aid-pssa389>3.0.co;2-n Ver en origen

  • ISSN 00318965
  • ISSN/ISBN 0031-8965

Nitride RCLEDs grown by MBE for POF applications

  • Calle, F.
  • Naranjo, F.B.
  • Fernández, S.
  • Sánchez-García, M.A.
  • Calleja, E.
  • Muñoz, E.

Physica Status Solidi A-Applications And Materials Science (p. 277-285) - 1/1/2002

Editor: Wiley-VCH Verlag

10.1002/1521-396x(200208)192:2<277::aid-pssa277>3.0.co;2-2 Ver en origen

  • ISSN 00318965
  • ISSN/ISBN 0031-8965

Strong localization in InGaN layers with high In content grown by molecular-beam epitaxy

  • Naranjo, F.B.
  • Sánchez-García, M.A.
  • Calle, F.
  • Calleja, E.
  • Jenichen, B.
  • Ploog, K.H.

Applied Physics Letters (p. 231-233) - 14/1/2002

Editor: American Institute of Physics Inc.

10.1063/1.1432751 Ver en origen

  • ISSN 00036951
  • ISSN/ISBN 0003-6951

Resonant-cavity InGaN multiple-quantum-well green light-emitting diode grown by molecular-beam epitaxy

  • Naranjo, F.B.
  • Fernández, S.
  • Sánchez-García, M.A.
  • Calle, F.
  • Calleja, E.

Applied Physics Letters (p. 2198-2200) - 25/3/2002

10.1063/1.1463701 Ver en origen

  • ISSN 00036951
  • ISSN/ISBN 0003-6951

Structural and optical characterization of thick InGaN layers and InGaN/GaN MQW grown by molecular beam epitaxy

  • Naranjo, F.B.
  • Fernández, S.
  • Sánchez-García, M.A.
  • Calle, F.
  • Calleja, E.
  • Trampert, A.
  • Ploog, K.H.
... Ver más Contraer

Materials Science And Engineering B-Advanced Functional Solid-State Materials (p. 131-134) - 30/5/2002

10.1016/s0921-5107(02)00032-6 Ver en origen

  • ISSN 09215107
  • ISSN/ISBN 0921-5107

Growth and characterization of high-quality 10-period AlGaN/GaN Bragg reflectors grown by molecular beam epitaxy

  • Fernández, S.
  • Naranjo, F.B.
  • Calle, F.
  • Calleja, E.
  • Trampert, A.
  • Ploog, K.H.

Materials Science And Engineering B-Advanced Functional Solid-State Materials (p. 31-34) - 30/5/2002

10.1016/s0921-5107(02)00033-8 Ver en origen

  • ISSN 09215107
  • ISSN/ISBN 0921-5107

Experimental characterisation of GaN-based resonant cavity light emitting diodes

  • Roycroft, B.
  • Akhter, M.
  • Maaskant, P.
  • De Mierry, P.
  • Fernández, S.
  • Naranjo, F.B.
  • Calleja, E.
  • McCormack, T.
  • Corbett, B.
... Ver más Contraer

Physica Status Solidi A-Applications And Materials Science (p. 97-102) - 1/7/2002

10.1002/1521-396x(200207)192:1<97::aid-pssa97>3.0.co;2-d Ver en origen

  • ISSN 00318965
  • ISSN/ISBN 0031-8965

Este/a investigador/a no tiene libros.

Este/a investigador/a no tiene capítulos de libro.

AlGaN photodetectors grown on Si(111) by molecular beam epitaxy

  • Pau, J.L.
  • Monroy, E.
  • Muñoz, E.
  • Naranjo, F.B.
  • Calle, F.
  • Sánchez-García, M.A.
  • Calleja, E.
... Ver más Contraer

Journal Of Crystal Growth (p. 544-548) - 1/1/2001

Editor: Elsevier

10.1016/s0022-0248(01)01291-x Ver en origen

  • ISSN 00220248
  • ISSN/ISBN 0022-0248

Plasma-assisted MBE growth of group-III nitrides: from basics to device applications

  • Sánchez-García, M.A.
  • Pau, J.L.
  • Naranjo, F.
  • Jiménez, A.
  • Fernández, S.
  • Ristic, J.
  • Calle, F.
  • Calleja, E.
  • Muñoz, E.
... Ver más Contraer

Materials Science And Engineering B-Advanced Functional Solid-State Materials (p. 189-196) - 30/5/2002

10.1016/s0921-5107(02)00049-1 Ver en origen

  • ISSN 09215107
  • ISSN/ISBN 0921-5107

Anomalous composition dependence of optical energies of MBE-grown InGaN

  • Fernandez-Torrente, I.
  • Amabile, D.
  • Martin, R.W.
  • O'Donnell, K.P.
  • Mosselmans, J.F.W.
  • Calleja, E.
  • Naranjo, F.B.
... Ver más Contraer

Materials Research Society Symposium - Proceedings (p. 673-676) - 1/1/2003

Editor: Materials Research Society

10.1557/proc-798-y5.47 Ver en origen

  • ISSN 02729172
  • ISSN/ISBN 0272-9172

Hydrogen-related local vibrational modes in GaN:Mg grown by molecular beam epitaxy

  • Pastor, D.
  • Cuscó, R.
  • Artús, L.
  • Naranjo, F.
  • Calleja, E.

Materials Research Society Symposium - Proceedings (p. 485-490) - 1/1/2003

Editor: Materials Research Society

10.1557/proc-798-y5.15 Ver en origen

  • ISSN 02729172
  • ISSN/ISBN 0272-9172

Novel photodetectors based on InGaN/GaN multiple quantum wells

  • Rivera, C.
  • Pau, J.L.
  • Naranjo, F.B.
  • Muñoz, E.

Physica Status Solidi A-Applications And Materials Science (p. 2658-2662) - 1/1/2004

Editor: Wiley-VCH Verlag

10.1002/pssa.200405019 Ver en origen

  • ISSN 00318965
  • ISSN/ISBN 0031-8965

Resonant Raman scattering in strained and relaxed inxGa 1-xN/GaN multiple quantum wells

  • Lazić, S.
  • Calleja, J.M.
  • Naranjo, F.B.
  • Fernández, S.
  • Calleja, E.

Materials Science Forum (p. 19-24) - 1/1/2005

Editor: Trans Tech Publications Ltd

10.4028/0-87849-971-7.19 Ver en origen

  • ISSN 02555476
  • ISSN/ISBN 1662-9752

Resonant Raman study of strain and composition in InGaN multiquantum wells

  • Lazić, S.
  • Calleja, J.M.
  • Naranjo, F.B.
  • Fernández, S.
  • Calleja, E.

Aip Conference Proceedings (p. 221-222) - 30/6/2005

10.1063/1.1994073 Ver en origen

  • ISSN 15517616
  • ISSN/ISBN 0094-243X

Novel nitride - Based materials for nonlinear optical signal processing applications at 1.5 μm

  • Valdueza-Felip, S.
  • Naranjo, F.B.
  • González-Herráez, M.
  • Fernández, H.
  • Solis, J.
  • Fernández, S.
  • Guillot, F.
  • Monroy, E.
  • Grandal, J.
  • Sánchez-García, M.A.
... Ver más Contraer

2007 Ieee International Symposium On Intelligent Signal Processing, Wisp (p. 1-6) - 1/12/2007

10.1109/wisp.2007.4447511 Ver en origen

  • ISSN/ISBN 9781424408306

How to play with the spectral sensitivity of interferometers using slow light concepts - and how to do it practically

  • Gonzalez-Herraez, M.
  • Esteban, O.
  • Naranjo, F.B.
  • Thevenaz, L.

Proceedings of SPIE - The International Society for Optical Engineering - 2007

10.1117/12.738653 Ver en origen

  • ISSN/ISBN 0277-786X

Physical properties of InN for optically controlling the speed of light

  • Naranjo, F.B.
  • González-Herráez, M.
  • Fernández, H.
  • Solis, J.
  • Monroy, E.

Optics InfoBase Conference Papers - 2007

Editor: Optical Society of America (OSA)

10.1364/ipnra.2007.jtua7 Ver en origen

  • ISSN/ISBN 2162-2701

Este/a investigador/a no tiene documentos de trabajo.

Este/a investigador/a no tiene informes técnicos.

Este/a investigador/a no tiene proyectos de investigación.

Este/a investigador/a no tiene tesis dirigidas.

Este/a investigador/a no tiene patentes o licencias de software.

Última actualización de los datos: 24/04/24 13:12