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Valdueza Felip, Sirona

Electrónica / Universidad de Alcalá

Publications

Influence of the AlN interlayer thickness on the photovoltaic properties of in-rich AlInN on Si heterojunctions deposited by RF sputtering

  • Valdueza-Felip, S.
  • Núñez-Cascajero, A.
  • Blasco, R.
  • Montero, D.
  • Grenet, L.
  • De La Mata, M.
  • Fernández, S.
  • Rodríguez-De Marcos, L.
  • Molina, S.I.
  • Olea, J.
  • Naranjo, F.B.
... View more Collapse

AIP Advances - 2018

Editor: American Institute of Physics Inc.

10.1063/1.5041924 View at source

  • ISSN/ISBN 2158-3226

Improved conversion efficiency of as-grown InGaN/GaN quantum-well solar cells for hybrid integration

  • Valdueza-Felip, S.
  • Mukhtarova, A.
  • Grenet, L.
  • Bougerol, C.
  • Durand, C.
  • Eymery, J.
  • Monroy, E.
... View more Collapse

Applied Physics Express - 2014

Editor: Japan Society of Applied Physics

10.7567/apex.7.032301 View at source

  • ISSN/ISBN 1882-0786

Nonlinear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths

  • Naranjo, F.B.
  • Kandaswamy, P.K.
  • Valdueza-Felip, S.
  • Calvo, V.
  • González-Herráez, M.
  • Martín-López, S.
  • Corredera, P.
  • Ḿndez, J.A.
  • Mutta, G.R.
  • Lacroix, B.
  • Ruterana, P.
  • Monroy, E.
... View more Collapse

Applied Physics Letters - 2011

10.1063/1.3535609 View at source

  • ISSN/ISBN 0003-6951

Dependence of the photovoltaic performance of pseudomorphic InGaN/GaN multiple-quantum-well solar cells on the active region thickness

  • Mukhtarova, A.
  • Valdueza-Felip, S.
  • Redaelli, L.
  • Durand, C.
  • Bougerol, C.
  • Monroy, E.
  • Eymery, J.
... View more Collapse

Applied Physics Letters - 2016

Editor: American Institute of Physics Inc.

10.1063/1.4947445 View at source

  • ISSN/ISBN 0003-6951

Effect of the quantum well thickness on the performance of InGaN photovoltaic cells

  • Redaelli, L.
  • Mukhtarova, A.
  • Valdueza-Felip, S.
  • Ajay, A.
  • Bougerol, C.
  • Himwas, C.
  • Faure-Vincent, J.
  • Durand, C.
  • Eymery, J.
  • Monroy, E.
... View more Collapse

Applied Physics Letters - 2014

Editor: American Institute of Physics Inc.

10.1063/1.4896679 View at source

  • ISSN/ISBN 0003-6951

Carrier localization in InN/InGaN multiple-quantum wells with high In-content

  • Valdueza-Felip, S.
  • Rigutti, L.
  • Naranjo, F.B.
  • Ruterana, P.
  • Mangeney, J.
  • Julien, F.H.
  • González-Herráez, M.
  • Monroy, E.
... View more Collapse

Applied Physics Letters - 2012

10.1063/1.4742157 View at source

  • ISSN/ISBN 0003-6951

Stranski-Krastanow growth of (112̄2) -oriented GaN/AlN quantum dots

  • Lahourcade, L.
  • Valdueza-Felip, S.
  • Kehagias, T.
  • Dimitrakopulos, G.P.
  • Komninou, P.
  • Monroy, E.

Applied Physics Letters - 2009

10.1063/1.3095499 View at source

  • ISSN/ISBN 0003-6951

Design of AlInN on silicon heterojunctions grown by sputtering for solar devices

  • Blasco, R.
  • Naranjo, F.B.
  • Valdueza-Felip, S.

Current Applied Physics (p. 1244-1252) - 2020

Editor: Elsevier B.V.

10.1016/j.cap.2020.07.018 View at source

  • ISSN/ISBN 1567-1739

Nonlinear absorption at optical telecommunication wavelengths of InN films deposited by RF sputtering

  • Valdueza-Felip, S.
  • Monteagudo-Lerma, L.
  • Mangeney, J.
  • Gonzalez-Herraez, M.
  • Julien, F.H.
  • Naranjo, F.B.

IEEE Photonics Technology Letters (p. 1998-2000) - 2012

10.1109/lpt.2012.2217484 View at source

  • ISSN/ISBN 1041-1135

Characterization of the resonant third-order nonlinear susceptibility of Si-doped GaN-AlN quantum wells and quantum dots at 1.5 μm

  • Valdueza-Felip, S.
  • Naranjo, F.B.
  • Gonzalez-Herraez, M.
  • Fernandez, H.
  • Solis, J.
  • Guillot, F.
  • Monroy, E.
  • Nevou, L.
  • Tchernycheva, M.
  • Julien, F.H.
... View more Collapse

IEEE Photonics Technology Letters (p. 1366-1368) - 2008

10.1109/lpt.2008.926842 View at source

  • ISSN/ISBN 1041-1135

This researcher has no books.

This researcher has no book chapters.

Novel nitride - Based materials for nonlinear optical signal processing applications at 1.5 μm

  • Valdueza-Felip, S.
  • Naranjo, F.B.
  • González-Herráez, M.
  • Fernández, H.
  • Solis, J.
  • Fernández, S.
  • Guillot, F.
  • Monroy, E.
  • Grandal, J.
  • Sánchez-García, M.A.
... View more Collapse

2007 Ieee International Symposium On Intelligent Signal Processing, Wisp (p. 1-6) - 1/12/2007

10.1109/wisp.2007.4447511 View at source

  • ISSN/ISBN 9781424408306

Study of high In-content AlInN deposition on p-Si(111) by RF-sputtering

  • Núñez-Cascajero, A.
  • Monteagudo-Lerma, L.
  • Valdueza-Felip, S.
  • Navío, C.
  • Monroy, E.
  • González-Herráez, M.
  • Naranjo, F.B.
... View more Collapse

Japanese Journal of Applied Physics - 2016

Editor: Japan Society of Applied Physics

10.7567/jjap.55.05fb07 View at source

  • ISSN/ISBN 1347-4065

Characterization of the resonant third-order nonlinear susceptibility of Si-doped GaN/AlN quantum wells and quantum dots at 1.5 μm

  • Valdueza-Felip, S.
  • Naranjo, F.B.
  • González-Herráez, M.
  • Fernández, H.
  • Solis, J.
  • Guillot, F.
  • Monroy, E.
  • Tchernycheva, M.
  • Nevou, L.
  • Julián, F.H.
... View more Collapse

Optics InfoBase Conference Papers - 2008

Editor: Optical Society of America

  • ISSN/ISBN 2162-2701

Development of ZnO:Al-based transparent contacts deposited at low-temperature by RF-sputtering on InN layers

  • Fernández, S.
  • Naranjo, F.B.
  • de Abril, O.
  • Valdueza-Felip, S.

Physica Status Solidi (C) Current Topics In Solid State Physics (p. 1065-1069) - 1/3/2012

10.1002/pssc.201100146 View at source

  • ISSN 18626351
  • ISSN/ISBN 1862-6351

Novel InN/InGaN multiple quantum well structures for slow-light generation at telecommunication wavelengths

  • Naranjo, F.B.
  • Kandaswamy, P.K.
  • Valdueza-Felip, S.
  • Lahourcade, L.
  • Calvo, V.
  • González-Herráez, M.
  • Martín-López, S.
  • Corredera, P.
  • Monroy, E.
... View more Collapse

Physica Status Solidi (C) Current Topics in Solid State Physics (p. 100-103) - 2010

Editor: Wiley-VCH Verlag

10.1002/pssc.200982628 View at source

  • ISSN/ISBN 1610-1642

P-type doping of semipolar GaN(1122) by plasma-assisted molecular-beam epitaxy

  • Das, A.
  • Lahourcade, L.
  • Pernot, J.
  • Valdueza-Felip, S.
  • Ruterana, P.
  • Laufer, A.
  • Eickhoff, M.
  • Monroy, E.
... View more Collapse

Physica Status Solidi (C) Current Topics in Solid State Physics (p. 1913-1915) - 2010

10.1002/pssc.200983618 View at source

  • ISSN/ISBN 1862-6351

Performance improvement of AlN/GaN-based intersubband detectors thanks to quantum dot active regions

  • Hofstetter, D.
  • Di Francesco, J.
  • Baumann, E.
  • Giorgetta, F.R.
  • Kandaswamy, P.K.
  • Das, A.
  • Valdueza-Felip, S.
  • Monroy, E.
... View more Collapse

Proceedings of SPIE - The International Society for Optical Engineering - 2010

10.1117/12.861569 View at source

  • ISSN/ISBN 0277-786X

Improved performance of SPR optical fiber sensors with InN as dielectric cover

  • Esteban, Ó.
  • Naranjo, F.B.
  • Díaz-Herrera, N.
  • Valdueza-Felip, S.
  • Navarrete, M.C.
  • González Cano, A.

Proceedings of SPIE - The International Society for Optical Engineering - 2011

10.1117/12.885081 View at source

  • ISSN/ISBN 0277-786X

Desarrollo de nitruros basados en InN para aplicaciones fotovoltaicas

  • Arántzazu Núñez Cascajero
  • Laura Monteagudo Lerma
  • Marco Jiménez Rodríguez
  • Sirona Valdueza Felip
  • Eva Monroy
  • Ana Isabel Ruiz Matute
  • Miguel González Herráez
  • Fernando Bernabé Naranjo Vega
... View more Collapse

Quintas Jornadas de Jóvenes Investigadores de la Universidad de Alcalá: Ciencias e Ingenierías (p. 65-74) - 2016

Editor: Editorial Universidad de Alcalá

  • ISSN/ISBN 978-84-16133-98-7

This researcher has no working papers.

This researcher has no technical reports.

This researcher has no research projects.

This researcher has no supervised thesis.

This researcher has no patents or software licenses.

Last data update: 4/24/24 1:02 PM