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Valdueza Felip, Sirona

Electrónica / Universidad de Alcalá

Publications

Characterization of the resonant third-order nonlinear susceptibility of Si-doped GaN-AlN quantum wells and quantum dots at 1.5 μm

  • Valdueza-Felip, S.
  • Naranjo, F.B.
  • Gonzalez-Herraez, M.
  • Fernandez, H.
  • Solis, J.
  • Guillot, F.
  • Monroy, E.
  • Nevou, L.
  • Tchernycheva, M.
  • Julien, F.H.
... View more Collapse

IEEE Photonics Technology Letters (p. 1366-1368) - 2008

10.1109/lpt.2008.926842 View at source

  • ISSN/ISBN 1041-1135

Non-linear properties of nitride-based nanostructures for optically controlling the speed of light at 1.5 mu m

  • Naranjo, F.B.
  • González-Herráez, M.
  • Valdueza-Felip, S.
  • Fernández, H.
  • Solis, J.
  • Fernández, S.
  • Monroy, E.
  • Grandal, J.
  • Sánchez-García, M.A.
... View more Collapse

Microelectronics Journal (p. 349-352) - 1/1/2009

Editor: Elsevier Ltd

10.1016/j.mejo.2008.07.029 View at source

  • ISSN 00262692
  • ISSN/ISBN 0026-2692

Stranski-Krastanow growth of (112̄2) -oriented GaN/AlN quantum dots

  • Lahourcade, L.
  • Valdueza-Felip, S.
  • Kehagias, T.
  • Dimitrakopulos, G.P.
  • Komninou, P.
  • Monroy, E.

Applied Physics Letters - 2009

10.1063/1.3095499 View at source

  • ISSN/ISBN 0003-6951

Applications of ZnO:Al deposited by RF sputtering to InN low-cost technology

  • Fernández, S.
  • Naranjo, F.B.
  • Valdueza-Felip, S.
  • De Abril, O.

Physica Status Solidi A-Applications And Materials Science (p. 1717-1721) - 1/7/2010

10.1002/pssa.200983725 View at source

  • ISSN 00318965
  • ISSN/ISBN 1862-6300

Influence of deposition conditions on nanocrystalline InN layers synthesized on Si(1 1 1) and GaN templates by RF sputtering

  • Valdueza-Felip, S.
  • Naranjo, F.B.
  • González-Herráez, M.
  • Lahourcade, L.
  • Monroy, E.
  • Fernández, S.

Journal of Crystal Growth (p. 2689-2694) - 2010

Editor: Elsevier B.V.

10.1016/j.jcrysgro.2010.05.036 View at source

  • ISSN/ISBN 0022-0248

Performance improvement of AlNGaN-based intersubband detectors by using quantum dots

  • Hofstetter, D.
  • Di Francesco, J.
  • Kandaswamy, P.K.
  • Das, A.
  • Valdueza-Felip, S.
  • Monroy, E.

IEEE Photonics Technology Letters (p. 1087-1089) - 2010

10.1109/lpt.2010.2050057 View at source

  • ISSN/ISBN 1041-1135

High-sensitive SPR sensing with Indium Nitride as a dielectric overlay of optical fibers

  • Esteban, O.
  • Naranjo, F.B.
  • Díaz-Herrera, N.
  • Valdueza-Felip, S.
  • Navarrete, M.-C.
  • González-Cano, A.

Sensors and Actuators, B: Chemical (p. 372-376) - 2011

10.1016/j.snb.2011.06.038 View at source

  • ISSN/ISBN 0925-4005

High-surface-quality nanocrystalline InN layers deposited on GaN templates by RF sputtering

  • Valdueza-Felip, S.
  • Naranjo, F.B.
  • González-Herráez, M.
  • Lahourcade, L.
  • Monroy, E.
  • Fernández, S.

Physica Status Solidi (A) Applications and Materials Science (p. 65-69) - 2011

10.1002/pssa.200925636 View at source

  • ISSN/ISBN 1862-6300

Nonlinear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths

  • Naranjo, F.B.
  • Kandaswamy, P.K.
  • Valdueza-Felip, S.
  • Calvo, V.
  • González-Herráez, M.
  • Martín-López, S.
  • Corredera, P.
  • Ḿndez, J.A.
  • Mutta, G.R.
  • Lacroix, B.
  • Ruterana, P.
  • Monroy, E.
... View more Collapse

Applied Physics Letters - 2011

10.1063/1.3535609 View at source

  • ISSN/ISBN 0003-6951

Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells

  • Valdueza-Felip, S.
  • Rigutti, L.
  • Naranjo, F.B.
  • Lacroix, B.
  • Fernández, S.
  • Ruterana, P.
  • Julien, F.H.
  • González-Herráez, M.
  • Monroy, E.
... View more Collapse

Physica Status Solidi (A) Applications and Materials Science (p. 17-20) - 2012

10.1002/pssa.201100188 View at source

  • ISSN/ISBN 1862-6300

This researcher has no books.

This researcher has no book chapters.

Novel nitride - Based materials for nonlinear optical signal processing applications at 1.5 μm

  • Valdueza-Felip, S.
  • Naranjo, F.B.
  • González-Herráez, M.
  • Fernández, H.
  • Solis, J.
  • Fernández, S.
  • Guillot, F.
  • Monroy, E.
  • Grandal, J.
  • Sánchez-García, M.A.
... View more Collapse

2007 Ieee International Symposium On Intelligent Signal Processing, Wisp (p. 1-6) - 1/12/2007

10.1109/wisp.2007.4447511 View at source

  • ISSN/ISBN 9781424408306

Characterization of the resonant third-order nonlinear susceptibility of Si-doped GaN/AlN quantum wells and quantum dots at 1.5 μm

  • Valdueza-Felip, S.
  • Naranjo, F.B.
  • González-Herráez, M.
  • Fernández, H.
  • Solis, J.
  • Guillot, F.
  • Monroy, E.
  • Tchernycheva, M.
  • Nevou, L.
  • Julián, F.H.
... View more Collapse

Optics InfoBase Conference Papers - 2008

Editor: Optical Society of America

  • ISSN/ISBN 2162-2701

P-type doping of semipolar GaN(1122) by plasma-assisted molecular-beam epitaxy

  • Das, A.
  • Lahourcade, L.
  • Pernot, J.
  • Valdueza-Felip, S.
  • Ruterana, P.
  • Laufer, A.
  • Eickhoff, M.
  • Monroy, E.
... View more Collapse

Physica Status Solidi (C) Current Topics in Solid State Physics (p. 1913-1915) - 2010

10.1002/pssc.200983618 View at source

  • ISSN/ISBN 1862-6351

Novel InN/InGaN multiple quantum well structures for slow-light generation at telecommunication wavelengths

  • Naranjo, F.B.
  • Kandaswamy, P.K.
  • Valdueza-Felip, S.
  • Lahourcade, L.
  • Calvo, V.
  • González-Herráez, M.
  • Martín-López, S.
  • Corredera, P.
  • Monroy, E.
... View more Collapse

Physica Status Solidi (C) Current Topics in Solid State Physics (p. 100-103) - 2010

Editor: Wiley-VCH Verlag

10.1002/pssc.200982628 View at source

  • ISSN/ISBN 1610-1642

Performance improvement of AlN/GaN-based intersubband detectors thanks to quantum dot active regions

  • Hofstetter, D.
  • Di Francesco, J.
  • Baumann, E.
  • Giorgetta, F.R.
  • Kandaswamy, P.K.
  • Das, A.
  • Valdueza-Felip, S.
  • Monroy, E.
... View more Collapse

Proceedings of SPIE - The International Society for Optical Engineering - 2010

10.1117/12.861569 View at source

  • ISSN/ISBN 0277-786X

Improved performance of SPR optical fiber sensors with InN as dielectric cover

  • Esteban, Ó.
  • Naranjo, F.B.
  • Díaz-Herrera, N.
  • Valdueza-Felip, S.
  • Navarrete, M.C.
  • González Cano, A.

Proceedings of SPIE - The International Society for Optical Engineering - 2011

10.1117/12.885081 View at source

  • ISSN/ISBN 0277-786X

Development of ZnO:Al-based transparent contacts deposited at low-temperature by RF-sputtering on InN layers

  • Fernández, S.
  • Naranjo, F.B.
  • de Abril, O.
  • Valdueza-Felip, S.

Physica Status Solidi (C) Current Topics In Solid State Physics (p. 1065-1069) - 1/3/2012

10.1002/pssc.201100146 View at source

  • ISSN 18626351
  • ISSN/ISBN 1862-6351

Desarrollo de nitruros basados en InN para aplicaciones fotovoltaicas

  • Arántzazu Núñez Cascajero
  • Laura Monteagudo Lerma
  • Marco Jiménez Rodríguez
  • Sirona Valdueza Felip
  • Eva Monroy
  • Ana Isabel Ruiz Matute
  • Miguel González Herráez
  • Fernando Bernabé Naranjo Vega
... View more Collapse

Quintas Jornadas de Jóvenes Investigadores de la Universidad de Alcalá: Ciencias e Ingenierías (p. 65-74) - 2016

Editor: Editorial Universidad de Alcalá

  • ISSN/ISBN 978-84-16133-98-7

Study of high In-content AlInN deposition on p-Si(111) by RF-sputtering

  • Núñez-Cascajero, A.
  • Monteagudo-Lerma, L.
  • Valdueza-Felip, S.
  • Navío, C.
  • Monroy, E.
  • González-Herráez, M.
  • Naranjo, F.B.
... View more Collapse

Japanese Journal of Applied Physics - 2016

Editor: Japan Society of Applied Physics

10.7567/jjap.55.05fb07 View at source

  • ISSN/ISBN 1347-4065

This researcher has no working papers.

This researcher has no technical reports.

This researcher has no research projects.

This researcher has no supervised thesis.

This researcher has no patents or software licenses.

Last data update: 4/24/24 1:02 PM