Valdueza Felip, Sirona
Actividades
- Artículos 34
- Libros 0
- Capítulos de libro 0
- Congresos 9
- Documentos de trabajo 0
- Informes técnicos 0
- Proyectos de investigación 0
- Tesis dirigidas 0
- Patentes o licencias de software 0
Influence of the AlN interlayer thickness on the photovoltaic properties of in-rich AlInN on Si heterojunctions deposited by RF sputtering
- Valdueza-Felip, S.
- Núñez-Cascajero, A.
- Blasco, R.
- Montero, D.
- Grenet, L.
- De La Mata, M.
- Fernández, S.
- Rodríguez-De Marcos, L.
- Molina, S.I.
- Olea, J.
- Naranjo, F.B.
AIP Advances - 2018
Editor: American Institute of Physics Inc.
10.1063/1.5041924 Ver en origen
- ISSN/ISBN 2158-3226
Improved conversion efficiency of as-grown InGaN/GaN quantum-well solar cells for hybrid integration
- Valdueza-Felip, S.
- Mukhtarova, A.
- Grenet, L.
- Bougerol, C.
- Durand, C.
- Eymery, J.
- Monroy, E.
Applied Physics Express - 2014
Editor: Japan Society of Applied Physics
10.7567/apex.7.032301 Ver en origen
- ISSN/ISBN 1882-0786
Nonlinear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths
- Naranjo, F.B.
- Kandaswamy, P.K.
- Valdueza-Felip, S.
- Calvo, V.
- González-Herráez, M.
- Martín-López, S.
- Corredera, P.
- Ḿndez, J.A.
- Mutta, G.R.
- Lacroix, B.
- Ruterana, P.
- Monroy, E.
Applied Physics Letters - 2011
10.1063/1.3535609 Ver en origen
- ISSN/ISBN 0003-6951
Dependence of the photovoltaic performance of pseudomorphic InGaN/GaN multiple-quantum-well solar cells on the active region thickness
- Mukhtarova, A.
- Valdueza-Felip, S.
- Redaelli, L.
- Durand, C.
- Bougerol, C.
- Monroy, E.
- Eymery, J.
Applied Physics Letters - 2016
Editor: American Institute of Physics Inc.
10.1063/1.4947445 Ver en origen
- ISSN/ISBN 0003-6951
Effect of the quantum well thickness on the performance of InGaN photovoltaic cells
- Redaelli, L.
- Mukhtarova, A.
- Valdueza-Felip, S.
- Ajay, A.
- Bougerol, C.
- Himwas, C.
- Faure-Vincent, J.
- Durand, C.
- Eymery, J.
- Monroy, E.
Applied Physics Letters - 2014
Editor: American Institute of Physics Inc.
10.1063/1.4896679 Ver en origen
- ISSN/ISBN 0003-6951
Carrier localization in InN/InGaN multiple-quantum wells with high In-content
- Valdueza-Felip, S.
- Rigutti, L.
- Naranjo, F.B.
- Ruterana, P.
- Mangeney, J.
- Julien, F.H.
- González-Herráez, M.
- Monroy, E.
Applied Physics Letters - 2012
10.1063/1.4742157 Ver en origen
- ISSN/ISBN 0003-6951
Stranski-Krastanow growth of (112̄2) -oriented GaN/AlN quantum dots
- Lahourcade, L.
- Valdueza-Felip, S.
- Kehagias, T.
- Dimitrakopulos, G.P.
- Komninou, P.
- Monroy, E.
Applied Physics Letters - 2009
10.1063/1.3095499 Ver en origen
- ISSN/ISBN 0003-6951
Design of AlInN on silicon heterojunctions grown by sputtering for solar devices
- Blasco, R.
- Naranjo, F.B.
- Valdueza-Felip, S.
Current Applied Physics (p. 1244-1252) - 2020
Editor: Elsevier B.V.
10.1016/j.cap.2020.07.018 Ver en origen
- ISSN/ISBN 1567-1739
Nonlinear absorption at optical telecommunication wavelengths of InN films deposited by RF sputtering
- Valdueza-Felip, S.
- Monteagudo-Lerma, L.
- Mangeney, J.
- Gonzalez-Herraez, M.
- Julien, F.H.
- Naranjo, F.B.
IEEE Photonics Technology Letters (p. 1998-2000) - 2012
10.1109/lpt.2012.2217484 Ver en origen
- ISSN/ISBN 1041-1135
Characterization of the resonant third-order nonlinear susceptibility of Si-doped GaN-AlN quantum wells and quantum dots at 1.5 μm
- Valdueza-Felip, S.
- Naranjo, F.B.
- Gonzalez-Herraez, M.
- Fernandez, H.
- Solis, J.
- Guillot, F.
- Monroy, E.
- Nevou, L.
- Tchernycheva, M.
- Julien, F.H.
IEEE Photonics Technology Letters (p. 1366-1368) - 2008
10.1109/lpt.2008.926842 Ver en origen
- ISSN/ISBN 1041-1135
Este/a investigador/a no tiene libros.
Este/a investigador/a no tiene capítulos de libro.
Novel nitride - Based materials for nonlinear optical signal processing applications at 1.5 μm
- Valdueza-Felip, S.
- Naranjo, F.B.
- González-Herráez, M.
- Fernández, H.
- Solis, J.
- Fernández, S.
- Guillot, F.
- Monroy, E.
- Grandal, J.
- Sánchez-García, M.A.
2007 Ieee International Symposium On Intelligent Signal Processing, Wisp (p. 1-6) - 1/12/2007
10.1109/wisp.2007.4447511 Ver en origen
- ISSN/ISBN 9781424408306
Study of high In-content AlInN deposition on p-Si(111) by RF-sputtering
- Núñez-Cascajero, A.
- Monteagudo-Lerma, L.
- Valdueza-Felip, S.
- Navío, C.
- Monroy, E.
- González-Herráez, M.
- Naranjo, F.B.
Japanese Journal of Applied Physics - 2016
Editor: Japan Society of Applied Physics
10.7567/jjap.55.05fb07 Ver en origen
- ISSN/ISBN 1347-4065
Characterization of the resonant third-order nonlinear susceptibility of Si-doped GaN/AlN quantum wells and quantum dots at 1.5 μm
- Valdueza-Felip, S.
- Naranjo, F.B.
- González-Herráez, M.
- Fernández, H.
- Solis, J.
- Guillot, F.
- Monroy, E.
- Tchernycheva, M.
- Nevou, L.
- Julián, F.H.
Optics InfoBase Conference Papers - 2008
Editor: Optical Society of America
- ISSN/ISBN 2162-2701
Development of ZnO:Al-based transparent contacts deposited at low-temperature by RF-sputtering on InN layers
- Fernández, S.
- Naranjo, F.B.
- de Abril, O.
- Valdueza-Felip, S.
Physica Status Solidi (C) Current Topics In Solid State Physics (p. 1065-1069) - 1/3/2012
10.1002/pssc.201100146 Ver en origen
- ISSN 18626351
- ISSN/ISBN 1862-6351
Novel InN/InGaN multiple quantum well structures for slow-light generation at telecommunication wavelengths
- Naranjo, F.B.
- Kandaswamy, P.K.
- Valdueza-Felip, S.
- Lahourcade, L.
- Calvo, V.
- González-Herráez, M.
- Martín-López, S.
- Corredera, P.
- Monroy, E.
Physica Status Solidi (C) Current Topics in Solid State Physics (p. 100-103) - 2010
Editor: Wiley-VCH Verlag
10.1002/pssc.200982628 Ver en origen
- ISSN/ISBN 1610-1642
P-type doping of semipolar GaN(1122) by plasma-assisted molecular-beam epitaxy
- Das, A.
- Lahourcade, L.
- Pernot, J.
- Valdueza-Felip, S.
- Ruterana, P.
- Laufer, A.
- Eickhoff, M.
- Monroy, E.
Physica Status Solidi (C) Current Topics in Solid State Physics (p. 1913-1915) - 2010
10.1002/pssc.200983618 Ver en origen
- ISSN/ISBN 1862-6351
Performance improvement of AlN/GaN-based intersubband detectors thanks to quantum dot active regions
- Hofstetter, D.
- Di Francesco, J.
- Baumann, E.
- Giorgetta, F.R.
- Kandaswamy, P.K.
- Das, A.
- Valdueza-Felip, S.
- Monroy, E.
Proceedings of SPIE - The International Society for Optical Engineering - 2010
10.1117/12.861569 Ver en origen
- ISSN/ISBN 0277-786X
Improved performance of SPR optical fiber sensors with InN as dielectric cover
- Esteban, Ó.
- Naranjo, F.B.
- Díaz-Herrera, N.
- Valdueza-Felip, S.
- Navarrete, M.C.
- González Cano, A.
Proceedings of SPIE - The International Society for Optical Engineering - 2011
10.1117/12.885081 Ver en origen
- ISSN/ISBN 0277-786X
Desarrollo de nitruros basados en InN para aplicaciones fotovoltaicas
- Arántzazu Núñez Cascajero
- Laura Monteagudo Lerma
- Marco Jiménez Rodríguez
- Sirona Valdueza Felip
- Eva Monroy
- Ana Isabel Ruiz Matute
- Miguel González Herráez
- Fernando Bernabé Naranjo Vega
Quintas Jornadas de Jóvenes Investigadores de la Universidad de Alcalá: Ciencias e Ingenierías (p. 65-74) - 2016
Editor: Editorial Universidad de Alcalá
- ISSN/ISBN 978-84-16133-98-7
Este/a investigador/a no tiene documentos de trabajo.
Este/a investigador/a no tiene informes técnicos.
Este/a investigador/a no tiene proyectos de investigación.
Este/a investigador/a no tiene tesis dirigidas.
Este/a investigador/a no tiene patentes o licencias de software.
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