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Romero Rojo, Fatima fatima.romero@upm.es

INGENIERÍA ELECTRÓNICA / Universidad Politécnica de Madrid

Publications

The impact of geopolitical risk on the behavior of oil prices and freight rates

  • Monge M
  • Romero Rojo MF
  • Gil-Alana LA

Energy - 1/1/2023

10.1016/j.energy.2023.126779 View at source

  • ISSN 03605442

Analyzing water-related equity indices in times of COVID-19

  • Monge M
  • Romero Rojo MF
  • Gil-Alana LA

Water Resources And Economics - 1/1/2023

10.1016/j.wre.2023.100232 View at source

  • ISSN 22124284

Origin of defect luminescence in ultraviolet emitting AlGaN diode structures

  • Feneberg, Martin
  • Romero, Fatima
  • Goldhahn, Rudiger
  • Wernicke, Tim
  • Reich, Christoph
  • Stellmach, Joachim
  • Mehnke, Frank
  • Knauer, Arne
  • Weyers, Markus
  • Kneissl, Michael;
... View more Collapse

Applied Physics Letters - 17/5/2021

10.1063/5.0047021 View at source

  • ISSN 00036951

Cryptocurrencies and stock market indices. Are they related?

  • Gil-Alana LA
  • Abakah EJA
  • Rojo MFR

Research In International Business And Finance - 1/1/2020

10.1016/j.ribaf.2019.101063 View at source

  • ISSN 02755319

Volatility persistence in cryptocurrency markets under structural breaks

  • Abakah EJA
  • Gil-Alana LA
  • Madigu G
  • Romero-Rojo F

International Review Of Economics & Finance (p. 680-691) - 1/1/2020

10.1016/j.iref.2020.06.035 View at source

  • ISSN 10590560

Sea surface temperatures: Seasonal persistence and trends

  • Gil-Alana LA
  • Monge M
  • Rojo MFR

Journal Of Atmospheric And Oceanic Technology (p. 2257-2266) - 1/1/2019

10.1175/jtech-d-19-0090.1 View at source

  • ISSN 07390572

Thermal and Electrical Stability Assessment of AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistors (MOS-HEMTs) With HfO2 Gate Dielectric

  • Gao, Z.
  • Romero, M. F.
  • Calle, F.;

Ieee Transactions On Electron Devices (p. 3142-3148) - 1/8/2018

10.1109/ted.2018.2842205 View at source

  • ISSN 00189383

Effects of Gd2O3 Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs

  • Gao, Z.
  • Romero, M. F.
  • Redondo-Cubero, A.
  • Pampillon, M. A.
  • San Andres, E.
  • Calle, F.;

Ieee Electron Device Letters (p. 611-614) - 1/5/2017

10.1109/led.2017.2682795 View at source

  • ISSN 07413106

Physics-Based Analytical Model for Input, Output, and Reverse Capacitance of a GaN HEMT With the Field-Plate Structure

  • Cucak, Dejana
  • Vasic, Miroslav
  • Garcia, Oscar
  • Angel Oliver, Jesus
  • Alou, Pedro
  • Antonio Cobos, Jose
  • Wang, Ashu
  • Martin-Horcajo, Sara
  • Fatima Romero, Maria
  • Calle, Fernando;
... View more Collapse

Ieee Transactions On Power Electronics (p. 2189-2202) - 1/3/2017

10.1109/tpel.2016.2569404 View at source

  • ISSN 08858993

Impact of 2D-Graphene on SiN Passivated AlGaN/GaN MIS-HEMTs Under Mist Exposure

  • Romero, MF
  • Boscá, A
  • Pedrós, J
  • Martínez, J
  • Fandan, R
  • Palacios, T
  • Calle, F
... View more Collapse

Ieee Electron Device Letters (p. 1441-1444) - 1/10/2017

10.1109/led.2017.2747500 View at source

  • ISSN 07413106

This researcher has no books.

This researcher has no book chapters.

Impermeable Graphene on AlGaN/GaN HEMTs

  • T. Palacios
  • FANDAN, RAJVEER SINGH
  • PAMPILLON ARCE, MARIA ANGELA
  • ROMERO ROJO, FATIMA
  • Martínez Rodrigo, Javier
  • BOSCA MOJENA, ALBERTO
  • Calle Gómez, Fernando
  • PEDROS AYALA, JORGE
... View more Collapse

Proceedings (p. 0-3) - 14/11/2019

  • iMarina

Effects of 2D-Graphene on SiN passivated AlGaN/GaN based-MISHEMTs

  • María Fátima Romero
  • Alberto Boscá
  • Javier Martínez
  • Jorge Pedrós
  • Tomás Palacios
  • Fernando Calle

24/7/2017

  • iMarina

Correlation between photoluminescence and structural properties in InGaN/GaN heterostructures

  • Q-T. Li
  • et al.
  • A. Minj
  • ROMERO ROJO, FATIMA

Proceedings (p. 0-3) - 24/7/2017

  • iMarina

Effects of mist exposure on SiN-passivated AlGaN/GaN-based MISHEMTs with and without graphene top layer. Best paper award

  • Calle Gómez, Fernando

22/5/2017

  • iMarina

Effects of HfO2 Gate dielectric and KOH-based pre-treatments on AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors

  • Calle Gómez, Fernando

8/2/2017

  • iMarina

Effects of Proton Irradiation on AlGaN/GaN based High Electron Mobility Transistors

  • Calle Gómez, Fernando

6/6/2016

  • iMarina

Effects of high-k gate dielectrics on the electrical behavior of AlInN/GaN based diodes and HEMTs

  • P. Godignon
  • M.A Papillon
  • J. Millan
  • E. San Andrés
  • GAO ZHAN, VERONICA
  • ROMERO ROJO, FATIMA
  • Calle Gómez, Fernando
... View more Collapse

Proceedings (p. 0-3) - 2/10/2016

  • iMarina

Reliability assessment of AlGaN/GaN HEMTs with different in situ cap layers under gate and drain bias stress

  • Chavan, Vinayak
  • ROMERO ROJO, FATIMA
  • Calle Gómez, Fernando

Proceedings (p. 0-3) - 8/6/2015

  • iMarina

Thermal stability study of AlGaN/GaN MOS-HEMTs using Gd2O3 as gate dielectric

  • Gao, Z
  • Romero, M F
  • Pampillon, M A
  • San Andres, E
  • Calle, F

Proceedings Of The 2013 Spanish Conference On Electron Devices (Cde 2013) (p. 78-+) - 16/4/2015

10.1109/cde.2015.7087508 View at source

  • ISSN 21634971

Thermal stability study of AlGaN/GaN MOS-HEMTs

  • MA Pampillon
  • E. San Andrés
  • GAO ZHAN, VERONICA
  • ROMERO ROJO, FATIMA
  • Calle Gómez, Fernando

Proceedings (p. 0-3) - 11/2/2015

  • iMarina

This researcher has no working papers.

This researcher has no technical reports.

Dispositivos de grafeno para la mejora de las energías renovables

  • Martínez Rodrigo, Javier (Investigador principal (IP))
  • PAMPILLON ARCE, MARIA ANGELA (Investigador/a)

Period: 01-01-2018 - 30-09-2021

Type of funding: National

Amount of funding: 166980,00 Euros.

  • iMarina

Convertidores de alta velocidad de conmutación multinivel y multifase para aplicaciones espaciales

  • Angulo Jerez, Manuel (Participante)
  • LAZAREVIC, VLADAN (Miembro del equipo de trabajo)
  • FUENTES IRIARTE, GONZALO (Participante)
  • ROMERO ROJO, FATIMA (Participante)
  • Vasic, Miroslav (Participante)
  • COBOS MARQUEZ, JOSE ANTONIO (Participante)
  • OLIVER RAMIREZ, JESUS ANGEL (Participante)
  • GARCIA SUAREZ, OSCAR (Investigador principal (IP))
... View more Collapse

Period: 01-01-2013 - 31-12-2016

Type of funding: National

Amount of funding: 248157,00 Euros.

  • iMarina

Amplificadores de envolvente de banda ancha para etapas EER/ET y fabricación de dispositivos de nitruro de galio (GAN)

  • Calle Gómez, Fernando (Investigador/a)
  • MARTIN ., SARA (Participante)
  • GONZALEZ SANCHEZ, Mª DEL CARMEN (Participante)
  • Duret, Benoit Alexandre (Participante)
  • Vasic, Miroslav (Participante)
  • ROMERO ROJO, FATIMA (Participante)
  • OLIVER RAMIREZ, JESUS ANGEL (Participante)
  • COBOS MARQUEZ, JOSE ANTONIO (Participante)
  • GARCIA SUAREZ, OSCAR (Investigador principal (IP))
... View more Collapse

Period: 01-01-2010 - 31-12-2012

Type of funding: National

Amount of funding: 278671,50 Euros.

  • iMarina

Dispositivos avanzados de Gap Ancho para el uso Racional de la Energía (RUE)

  • MARTÍN HEREDERO, MARTA (Miembro del equipo de trabajo)
  • Vasic, Miroslav (Miembro del equipo de trabajo)
  • SANCHEZ VALLADOLID, IGNACIO (Miembro del equipo de trabajo)
  • NEIRA GUIJARRO, ANA (Miembro del equipo de trabajo)
  • COBOS MARQUEZ, JOSE ANTONIO (Investigador principal (IP))
  • PEDROS AYALA, JORGE (Miembro del equipo de trabajo)
  • BOSCA MOJENA, ALBERTO (Miembro del equipo de trabajo)
  • Calle Gómez, Fernando (Investigador principal (IP))
  • Muñoz Merino, Elías (Participante)
  • ROMERO ROJO, FATIMA (Participante)
... View more Collapse

Period: 18-12-2009 - 16-12-2015

Type of funding: National

  • iMarina

Improvement of performance and reliability of GaN-based high electronmobility transistors (HEMTs) using high-k dielectrics

  • Calle Gómez, Fernando (Director)
  • ROMERO ROJO, María Fátima (Director) Doctorando: Zhan, Gao

1/1/2017

  • iMarina

This researcher has no patents or software licenses.

Last data update: 8/28/24 5:29 PM