Valdueza Felip, Sirona
Publications
- Articles 34
- Books 0
- Book chapters 0
- Conferences 9
- Working papers 0
- Technical reports 0
- Research projects 0
- Supervised theses 0
- Patent or software license 0
Amorphous Silicon Films and Nanocolumns Deposited on Sapphire and GaN by DC Sputtering
- Sun, M.
- Valdueza-Felip, S.
- Naranjo, F.B.
Physica Status Solidi (B) Basic Research - 2023
Editor: John Wiley and Sons Inc
10.1002/pssb.202200578 View at source
- ISSN/ISBN 1521-3951
Comparison of the Material Quality of AlxIn1−xN (x—0–0.50) Films Deposited on Si(100) and Si(111) at Low Temperature by Reactive RF Sputtering
- Sun, M.
- Blasco, R.
- Nwodo, J.
- de la Mata, M.
- Molina, S.I.
- Ajay, A.
- Monroy, E.
- Valdueza-Felip, S.
- Naranjo, F.B.
Materials - 2022
Editor: MDPI
10.3390/ma15207373 View at source
- ISSN/ISBN 1996-1944
Low-to-Mid Al Content (x = 0–0.56) AlxIn1−xN Layers Deposited on Si(100) by Radio-Frequency Sputtering
- Blasco, R.
- Valdueza-Felip, S.
- Montero, D.
- Sun, M.
- Olea, J.
- Naranjo, F.B.
Physica Status Solidi (B) Basic Research - 2020
Editor: Wiley-VCH Verlag
10.1002/pssb.201900575 View at source
- ISSN/ISBN 1521-3951
Design of AlInN on silicon heterojunctions grown by sputtering for solar devices
- Blasco, R.
- Naranjo, F.B.
- Valdueza-Felip, S.
Current Applied Physics (p. 1244-1252) - 2020
Editor: Elsevier B.V.
10.1016/j.cap.2020.07.018 View at source
- ISSN/ISBN 1567-1739
AlxIn1-xN on Si (100) Solar Cells (x = 0-0.56) deposited by RF sputtering
- Valdueza-Felip S
- Blasco R
- Olea J
- Díaz-Lobo A
- Braña AF
- Naranjo FB
Materials - 1/5/2020
Editor: MDPI AG
10.3390/ma13102336 View at source
- ISSN 19961944
- ISSN/ISBN 1996-1944
High quality Al0.37In0.63N layers grown at low temperature (<300 °C) by radio-frequency sputtering
- Núñez-Cascajero, A.
- Blasco, R.
- Valdueza-Felip, S.
- Montero, D.
- Olea, J.
- Naranjo, F.B.
Materials Science in Semiconductor Processing (p. 8-14) - 2019
Editor: Elsevier Ltd
10.1016/j.mssp.2019.04.029 View at source
- ISSN/ISBN 1369-8001
Influence of the AlInN Thickness on the Photovoltaic Characteristics of AlInN on Si Solar Cells Deposited by RF Sputtering
- Blasco, R.
- Núñez-Cascajero, A.
- Jiménez-Rodríguez, M.
- Montero, D.
- Grenet, L.
- Olea, J.
- Naranjo, F.B.
- Valdueza-Felip, S.
Physica Status Solidi (A) Applications and Materials Science - 2019
Editor: Wiley-VCH Verlag
10.1002/pssa.201800494 View at source
- ISSN/ISBN 1862-6319
Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputtering
- Núñez-Cascajero, A.
- Valdueza-Felip, S.
- Blasco, R.
- de la Mata, M.
- Molina, S.I.
- González-Herráez, M.
- Monroy, E.
- Naranjo, F.B.
Journal of Alloys and Compounds (p. 824-830) - 2018
Editor: Elsevier Ltd
10.1016/j.jallcom.2018.08.059 View at source
- ISSN/ISBN 0925-8388
Influence of the AlN interlayer thickness on the photovoltaic properties of in-rich AlInN on Si heterojunctions deposited by RF sputtering
- Valdueza-Felip, S.
- Núñez-Cascajero, A.
- Blasco, R.
- Montero, D.
- Grenet, L.
- De La Mata, M.
- Fernández, S.
- Rodríguez-De Marcos, L.
- Molina, S.I.
- Olea, J.
- Naranjo, F.B.
AIP Advances - 2018
Editor: American Institute of Physics Inc.
10.1063/1.5041924 View at source
- ISSN/ISBN 2158-3226
In-rich AlxIn1-xN grown by RF-sputtering on sapphire: From closely-packed columnar to high-surface quality compact layers
- Núñez-Cascajero, A.
- Valdueza-Felip, S.
- Monteagudo-Lerma, L.
- Monroy, E.
- Taylor-Shaw, E.
- Martin, R.W.
- González-Herráez, M.
- Naranjo, F.B.
Journal of Physics D: Applied Physics - 2017
Editor: Institute of Physics Publishing
10.1088/1361-6463/aa53d5 View at source
- ISSN/ISBN 1361-6463
This researcher has no books.
This researcher has no book chapters.
Desarrollo de nitruros basados en InN para aplicaciones fotovoltaicas
- Arántzazu Núñez Cascajero
- Laura Monteagudo Lerma
- Marco Jiménez Rodríguez
- Sirona Valdueza Felip
- Eva Monroy
- Ana Isabel Ruiz Matute
- Miguel González Herráez
- Fernando Bernabé Naranjo Vega
Quintas Jornadas de Jóvenes Investigadores de la Universidad de Alcalá: Ciencias e Ingenierías (p. 65-74) - 2016
Editor: Editorial Universidad de Alcalá
- ISSN/ISBN 978-84-16133-98-7
Study of high In-content AlInN deposition on p-Si(111) by RF-sputtering
- Núñez-Cascajero, A.
- Monteagudo-Lerma, L.
- Valdueza-Felip, S.
- Navío, C.
- Monroy, E.
- González-Herráez, M.
- Naranjo, F.B.
Japanese Journal of Applied Physics - 2016
Editor: Japan Society of Applied Physics
10.7567/jjap.55.05fb07 View at source
- ISSN/ISBN 1347-4065
Development of ZnO:Al-based transparent contacts deposited at low-temperature by RF-sputtering on InN layers
- Fernandez, S.
- Naranjo, F. B.
- de Abril, O.
- Valdueza-Felip, S.;
Physica Status Solidi (C) Current Topics In Solid State Physics (p. 1065-1069) - 1/3/2012
10.1002/pssc.201100146 View at source
- ISSN 18626351
- ISSN/ISBN 1862-6351
Improved performance of SPR optical fiber sensors with InN as dielectric cover
- Esteban, Ó.
- Naranjo, F.B.
- Díaz-Herrera, N.
- Valdueza-Felip, S.
- Navarrete, M.C.
- González Cano, A.
Proceedings of SPIE - The International Society for Optical Engineering - 2011
10.1117/12.885081 View at source
- ISSN/ISBN 0277-786X
P-type doping of semipolar GaN(1122) by plasma-assisted molecular-beam epitaxy
- Das, A.
- Lahourcade, L.
- Pernot, J.
- Valdueza-Felip, S.
- Ruterana, P.
- Laufer, A.
- Eickhoff, M.
- Monroy, E.
Physica Status Solidi (C) Current Topics in Solid State Physics (p. 1913-1915) - 2010
10.1002/pssc.200983618 View at source
- ISSN/ISBN 1862-6351
Novel InN/InGaN multiple quantum well structures for slow-light generation at telecommunication wavelengths
- Naranjo, F.B.
- Kandaswamy, P.K.
- Valdueza-Felip, S.
- Lahourcade, L.
- Calvo, V.
- González-Herráez, M.
- Martín-López, S.
- Corredera, P.
- Monroy, E.
Physica Status Solidi (C) Current Topics in Solid State Physics (p. 100-103) - 2010
Editor: Wiley-VCH Verlag
10.1002/pssc.200982628 View at source
- ISSN/ISBN 1610-1642
Performance improvement of AlN/GaN-based intersubband detectors thanks to quantum dot active regions
- Hofstetter, D.
- Di Francesco, J.
- Baumann, E.
- Giorgetta, F.R.
- Kandaswamy, P.K.
- Das, A.
- Valdueza-Felip, S.
- Monroy, E.
Proceedings of SPIE - The International Society for Optical Engineering - 2010
10.1117/12.861569 View at source
- ISSN/ISBN 0277-786X
Characterization of the resonant third-order nonlinear susceptibility of Si-doped GaN/AlN quantum wells and quantum dots at 1.5 μm
- Valdueza-Felip, S.
- Naranjo, F.B.
- González-Herráez, M.
- Fernández, H.
- Solis, J.
- Guillot, F.
- Monroy, E.
- Tchernycheva, M.
- Nevou, L.
- Julián, F.H.
Optics InfoBase Conference Papers - 2008
Editor: Optical Society of America
- ISSN/ISBN 2162-2701
Novel nitride - Based materials for nonlinear optical signal processing applications at 1.5 μm
- Valdueza-Felip, S
- Naranjo, FB
- González-Herráez, M
- Fernández, H
- Solis, J
- Fernández, S
- Guillot, F
- Monroy, E
- Grandal, J
- Sánchez-García, MA
2007 Ieee International Symposium On Intelligent Signal Processing, Wisp (p. 1-6) - 1/12/2007
10.1109/wisp.2007.4447511 View at source
- ISSN/ISBN 9781424408306
This researcher has no working papers.
This researcher has no technical reports.
This researcher has no research projects.
This researcher has no supervised thesis.
This researcher has no patents or software licenses.
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