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Pampillon Arce, Maria Angela ma.pampillon@upm.es

INGENIERÍA ELECTRÓNICA / Universidad Politécnica de Madrid

Actividades

Advanced graphene-based transparent conductive electrodes for photovoltaic applications

  • Fernández S
  • Boscá A
  • Pedrós J
  • Inés A
  • Fernández M
  • Arnedo I
  • González JP
  • de la Cruz M
  • Sanz D
  • Molinero A
  • Fandan RS
  • Pampillón Má
  • Calle F
  • Gandía JJ
  • Cárabe J
  • Martínez J
... Ver más Contraer

Micromachines - 1/6/2019

10.3390/mi10060402 Ver en origen

  • ISSN 2072666X

Thermal Assessment of AlGaN/GaN MOS-HEMTs on Si Substrate Using Gd2O3 as Gate Dielectric

  • Gao, Zhan
  • Fatima Romero, Maria
  • Angela Pampillon, Maria
  • San Andres, Enrique
  • Calle, Fernando;

Ieee Transactions On Electron Devices (p. 2729-2734) - 1/7/2016

10.1109/ted.2016.2564301 Ver en origen

  • ISSN 00189383

Scavenging effect on plasma oxidized Gd2O3 grown by high pressure sputtering on Si and InP substrates

  • Pampillón MA
  • Feijoo PC
  • San Andrés E
  • García H
  • Castán H
  • Dueñas S

Semiconductor Science And Technology - 1/3/2015

10.1088/0268-1242/30/3/035023 Ver en origen

  • ISSN 13616641

Nano-laminate vs. direct deposition of high permittivity gadolinium scandate on silicon by high pressure sputtering

  • Feijoo, P. C.
  • Pampillon, M. A.
  • San Andres, E.
  • Fierro, J. L. G.;

Thin Solid Films (p. 62-66) - 30/10/2015

10.1016/j.tsf.2015.07.045 Ver en origen

  • ISSN 00406090

High-k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors

  • Wirths, Stephan
  • Stange, Daniela
  • Pampillon, Maria-Angela
  • Tiedemann, Andreas T.
  • Mussler, Gregor
  • Fox, Alfred
  • Breuer, Uwe
  • Baert, Bruno
  • San Andres, Enrique
  • Nguyen, Ngoc D.
  • Hartmann, Jean-Michel
  • Ikonic, Zoran
  • Mantl, Siegfried
  • Buca, Dan;
... Ver más Contraer

Acs Applied Materials & Interfaces (p. 62-67) - 1/1/2015

10.1021/am5075248 Ver en origen

  • ISSN 19448244

Gadolinium scandate by high-pressure sputtering for future generations of high-kappa dielectrics

  • Feijoo, P. C.
  • Pampillon, M. A.
  • Andres, E. San
  • Fierro, J. L. G.;

Semiconductor Science And Technology - 1/8/2013

10.1088/0268-1242/28/8/085004 Ver en origen

  • ISSN 13616641

Interface quality of Sc2O3 and Gd2O3 films based metal-insulator-silicon structures using Al, Pt, and Ti gates: Effect of buffer layers and scavenging electrodes

  • Gómez A
  • Castán H
  • García H
  • Dueñas S
  • Bailón L
  • Pampillón MA
  • Feijoo PC
  • San Andrés E
... Ver más Contraer

Journal Of Vacuum Science And Technology B: Nanotechnology And Microelectronics - 1/1/2013

10.1116/1.4768678 Ver en origen

  • ISSN 21662746

High pressure sputtering as a viable technique for future high permittivity dielectric on III-V integration: GdOx on InP demonstration

  • Pampillón MA
  • Cañadilla C
  • Feijoo PC
  • San Andrés E
  • Del Prado A

Journal Of Vacuum Science And Technology B: Nanotechnology And Microelectronics - 1/1/2013

10.1116/1.4771970 Ver en origen

  • ISSN 21662746

Optimization of in situ plasma oxidation of metallic gadolinium thin films deposited by high pressure sputtering on silicon

  • Pampillón MA
  • Feijoo PC
  • San Andrés E
  • Lucía ML

Journal Of Vacuum Science And Technology B: Nanotechnology And Microelectronics - 1/1/2013

10.1116/1.4769893 Ver en origen

  • ISSN 21662746

Optimization of gadolinium oxide growth deposited on Si by high pressure sputtering

  • Feijoo PC
  • Pampillón MA
  • Andrés ES

Journal Of Vacuum Science And Technology B: Nanotechnology And Microelectronics - 1/1/2013

10.1116/1.4766184 Ver en origen

  • ISSN 21662746

Este/a investigador/a no tiene libros.

Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets Introduction

  • Arce, M. A. P.;

Magnetic Nanoparticles: A Study By Synchrotron Radiation And Rf Transverse Susceptibility (p. 1-20) - 1/1/2017

10.1007/978-3-319-66607-5 Ver en origen

  • ISSN 21905053

Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets Conclusions and Future Work

  • Pampillon Arce, Maria Angela;

Magnetic Nanoparticles: A Study By Synchrotron Radiation And Rf Transverse Susceptibility (p. 155-157) - 1/1/2017

10.1007/978-3-319-66607-5_9 Ver en origen

  • ISSN 21905053

Characterization Techniques

  • Pampillon Arce, Maria Angela;

Magnetic Nanoparticles: A Study By Synchrotron Radiation And Rf Transverse Susceptibility (p. 41-62) - 1/1/2017

10.1007/978-3-319-66607-5_3 Ver en origen

  • ISSN 21905053

Thermal Oxidation of Gd2O3

  • Pampillon Arce, Maria Angela;

Magnetic Nanoparticles: A Study By Synchrotron Radiation And Rf Transverse Susceptibility (p. 63-75) - 1/1/2017

10.1007/978-3-319-66607-5_4 Ver en origen

  • ISSN 21905053

Gadolinium Scandate

  • Pampillon Arce, Maria Angela;

Magnetic Nanoparticles: A Study By Synchrotron Radiation And Rf Transverse Susceptibility (p. 109-124) - 1/1/2017

10.1007/978-3-319-66607-5_6 Ver en origen

  • ISSN 21905053

Interface Scavenging

  • Pampillon Arce, Maria Angela;

Magnetic Nanoparticles: A Study By Synchrotron Radiation And Rf Transverse Susceptibility (p. 125-140) - 1/1/2017

10.1007/978-3-319-66607-5_7 Ver en origen

  • ISSN 21905053

Gd2O3 on InP Substrates

  • Pampillon Arce, Maria Angela;

Magnetic Nanoparticles: A Study By Synchrotron Radiation And Rf Transverse Susceptibility (p. 141-153) - 1/1/2017

10.1007/978-3-319-66607-5_8 Ver en origen

  • ISSN 21905053

Fabrication Techniques

  • Pampillon Arce, Maria Angela;

Magnetic Nanoparticles: A Study By Synchrotron Radiation And Rf Transverse Susceptibility (p. 21-39) - 1/1/2017

10.1007/978-3-319-66607-5_2 Ver en origen

  • ISSN 21905053

Plasma Oxidation of Gd2O3 and Sc2O3

  • Pampillon Arce, Maria Angela;

Magnetic Nanoparticles: A Study By Synchrotron Radiation And Rf Transverse Susceptibility (p. 77-108) - 1/1/2017

10.1007/978-3-319-66607-5_5 Ver en origen

  • ISSN 21905053

Imaging techniques for characterizing the nucleation dynamics in CVD graphene

  • LADRON DE GUEVARA RUIZ, ANTONIO
  • PAMPILLON ARCE, MARIA ANGELA
  • Martínez Rodrigo, Javier
  • BOSCA MOJENA, ALBERTO
  • Calle Gómez, Fernando
  • PEDROS AYALA, JORGE

Proceedings (p. 1-3) - 25/6/2019

  • iMarina

Impermeable Graphene on AlGaN/GaN HEMTs

  • T. Palacios
  • FANDAN, RAJVEER SINGH
  • PAMPILLON ARCE, MARIA ANGELA
  • ROMERO ROJO, FATIMA
  • Martínez Rodrigo, Javier
  • BOSCA MOJENA, ALBERTO
  • Calle Gómez, Fernando
  • PEDROS AYALA, JORGE
... Ver más Contraer

Proceedings (p. 0-3) - 14/11/2019

  • iMarina

Thermal stability study of AlGaN/GaN MOS-HEMTs using Gd2O3 as gate dielectric

  • Gao, Z
  • Romero, M F
  • Pampillon, M A
  • San Andres, E
  • Calle, F

Proceedings Of The 2013 Spanish Conference On Electron Devices (Cde 2013) (p. 78-+) - 16/4/2015

10.1109/cde.2015.7087508 Ver en origen

  • ISSN 21634971

High pressure sputtering for high-k dielectric deposition. Is it worth trying?

  • San Andrés E
  • Feijoo PC
  • Pampillón MA
  • Lucía ML
  • Del Prado A

Ecs Transactions (p. 27-39) - 11/5/2014

10.1149/06102.0027ecst Ver en origen

  • ISSN 19386737

Growth and Interface Engineering of Highly Strained Low Bandgap Group IV Semiconductors

  • Wirths, S
  • Pampillon, M A
  • San Andres, E
  • Stange, D
  • Tiedemann, A T
  • Mussler, G
  • Fox, A
  • Breuer, U
  • Hartmann, J-M
  • Mantll, S
  • Buca, D
... Ver más Contraer

2014 7th International Silicon-Germanium Technology And Device Meeting (Istdm) (p. 13-14) - 1/1/2014

10.1109/istdm.2014.6874645 Ver en origen

Electrical characterization of gadolinium oxide deposited by high pressure sputtering with in situ plasma oxidation

  • Angela Pampillon, Maria
  • Carlos Feijoo, Pedro
  • San Andres, Enrique;

Microelectronic Engineering (p. 236-239) - 25/6/2013

10.1016/j.mee.2013.03.094 Ver en origen

  • ISSN 01679317

High permittivity gadolinium oxide deposited on indium phosphide by high-pressure sputtering without interface treatments

  • San Andres, Enrique
  • Angela Pampillon, Maria
  • Carlos Feijoo, Pedro
  • Perez, Raul
  • Canadilla, Carmina;

Microelectronic Engineering (p. 223-226) - 25/6/2013

10.1016/j.mee.2013.03.133 Ver en origen

  • ISSN 01679317

Gadolinium Scandate by High Pressure Sputtering as a High-k Dielectric

  • Feijoo, P. C.
  • Pampillon, M. A.
  • Andres, E. San;

Proceedings Of The 2013 Spanish Conference On Electron Devices (Cde 2013) (p. 17-20) - 1/1/2013

  • ISSN 21634971
  • iMarina

Electrical study of ScO-based MIS structures using Al and Ti as gate electrodes

  • Garcia, H.
  • Castan, H.
  • Duenas, S.
  • Bailon, L.
  • Feijoo, P. C.
  • Pampillon, M. A.
  • San Andres, E.;
... Ver más Contraer

Proceedings Of The 2013 Spanish Conference On Electron Devices (Cde 2013) (p. 285-288) - 1/1/2013

  • ISSN 21634971
  • iMarina

Plasma oxidation of metallic gadolinium deposited on silicon by high pressure sputtering as high permittivity dielectric

  • Pampillon, M. A.
  • Feijoo, P. C.
  • Andres, E. San
  • Fierro, J. L. G.;

Proceedings Of The 2013 Spanish Conference On Electron Devices (Cde 2013) (p. 5-8) - 1/1/2013

  • ISSN 21634971
  • iMarina

Este/a investigador/a no tiene documentos de trabajo.

Este/a investigador/a no tiene informes técnicos.

G4-UPM.Nuevos materiales bidimensionales: caracterización, propiedades y aplicaciones

  • Martínez Rodrigo, Javier (Participante)
  • Izquierdo López, Raúl (Participante)
  • PEDROS AYALA, JORGE (Participante)
  • FANDAN, RAJVEER SINGH (Participante)
  • RYU CHO, YU KYOUNG (Participante)
  • Calle Gómez, Fernando (Investigador principal (IP))
  • PAMPILLON ARCE, MARIA ANGELA (Participante)
  • BOSCA MOJENA, ALBERTO (Participante)
... Ver más Contraer

Ejecución: 01-01-2019 - 30-04-2023

Tipo: Regional

Importe financiado: 68902,63 Euros.

  • iMarina

Dispositivos de grafeno para la mejora de las energías renovables

  • Martínez Rodrigo, Javier (Investigador principal (IP))
  • PAMPILLON ARCE, MARIA ANGELA (Investigador/a)

Ejecución: 01-01-2018 - 30-09-2021

Tipo: Nacional

Importe financiado: 166980,00 Euros.

  • iMarina

Este/a investigador/a no tiene tesis dirigidas.

Este/a investigador/a no tiene patentes o licencias de software.

Última actualización de los datos: 28/08/24 17:29