Sanz Hervas, Alfredo alfredo.sanz@upm.es
Actividades
- Artículos 42
- Libros 1
- Capítulos de libro 0
- Congresos 19
- Documentos de trabajo 0
- Informes técnicos 0
- Proyectos de investigación 2
- Tesis dirigidas 2
- Patentes o licencias de software 2
MOVPE growth and properties of P-I-N InGaAs/GaAs strained multi-quantum well structures on (1 1 1)A GaAs substrates
- Kim J
- Cho S
- Sanz-Hervás A
- Majerfeld A
- Kim B
Journal Of Crystal Growth (p. 525-529) - 1/1/2000
10.1016/s0022-0248(00)00763-6 Ver en origen
- ISSN 00220248
Interfacial properties of (111)A GaAs/AlGaAs multiquantum-well structures grown by metalorganic vapor phase epitaxy
- Sanz-Hervás A
- Cho S
- Majerfeld A
- Kim B
Applied Physics Letters (p. 3073-3075) - 22/5/2000
10.1063/1.126583 Ver en origen
- ISSN 00036951
High-resolution X-ray diffraction study of AlAs/Al0.5Ga0.5As/GaAs quantum well structures grown by molecular beam epitaxy on (11 n)A GaAs
Journal Of Crystal Growth (p. 214-220) - 1/6/2000
10.1016/s0022-0248(00)00368-7 Ver en origen
- ISSN 00220248
Determination of the pyroelectric coefficient in strained InGaAs/GaAs quantum wells grown on (111)B GaAs substrates
- Cho, S
- Majerfeld, A
- Sanz-Hervas, A
- Sanchez, JJ
- Sanchez-Rojas, JL
- Izpura, I;
Journal Of Applied Physics (p. 915-917) - 5/7/2001
10.1063/1.1379563 Ver en origen
- ISSN 00218979
Influence of crystal properties on the absorption IR spectra of polycrystalline AlN thin films
- Sanz-Hervás, A
- Iborra, E
- Clement, M
- Sangrador, J
- Aguilar, M
Diamond And Related Materials (p. 1186-1189) - 1/3/2003
10.1016/s0925-9635(02)00228-5 Ver en origen
- ISSN 09259635
Electronic parameters and interfacial properties of GaAs/Al xGa1-xAs multiquantum wells grown on (111)A GaAs by metalorganic vapor phase epitaxy
- Cho S
- Sanz-Hervás A
- Majerfeld A
- Kim B
Physical Review b (p. 353081-353089) - 1/7/2003
10.1103/physrevb.68.035308 Ver en origen
- ISSN 01631829
Influence of sputtering mechanisms on the preferred orientation of aluminum nitride thin films
- Clement, M
- Iborra, E
- Sangrador, J
- Sanz-Hervás, A
- Vergara, L
- Aguilar, M
Journal Of Applied Physics (p. 1495-1500) - 1/8/2003
10.1063/1.1587267 Ver en origen
- ISSN 00218979
Effect of particle bombardment on the orientation and the residual stress of sputtered AlN films for SAW devices
- Iborra, E
- Clement, M
- Sangrador, J
- Sanz-Hervás, A
- Vergara, L
- Aguilar, M
Ieee Transactions On Ultrasonics Ferroelectrics And Frequency Control (p. 352-358) - 1/1/2004
10.1109/tuffc.2004.1295415 Ver en origen
- ISSN 08853010
SAW characteristics of AlN films sputtered on silicon substrates
- Clement, M
- Vergara, L
- Sangrador, J
- Iborra, E
- Sanz-Hervás, A
Ultrasonics (p. 403-407) - 1/1/2004
10.1016/j.ultras.2004.01.034 Ver en origen
- ISSN 0041624X
Influence of the Ge coverage prior to carbonization on the structure of SiC grown on Si(111)
- Morales, FM
- Zgheib, C
- Molina, SI
- Araujo, D
- Garcia, R
- Fernandez, C
- Sanz-Hervas, A
- Masri, P
- Weih, P
- Stauden, T
- Ambacher, O
- Pezoldt, J;
Materials Science Forum (p. 297-300) - 1/1/2004
10.4028/www.scientific.net/msf.457-460.297 Ver en origen
- ISSN 02555476
Este/a investigador/a no tiene capítulos de libro.
Design and characterization of two color GaAs based quantum well infrared detector structures
- Sanchez-Rojas J
- Guzman A
- Munoz E
- Sanchez J
- Calleja E
- Sanz-Hervas A
- Villar C
- Aguilar M
- Montojo M
- Vergara G
- Gomez L
Advanced Workshop On Frontiers In Electronics, Proceedings, Wofe (p. 65-71) - 1/1/1997
- iMarina
Structural and optical properties of very high quality GaAs/AlGaAs multiple quantum well structures grown on (111)A substrates by MOVPE
- Sanz-Hervas A
- Cho S
- Kovalenkov O
- Dickey S
- Majerfeld A
- Villar C
- Lopez M
- Melliti R
- Wang G
- Tronc P
- Kim B
Proceedings Of The Ieee 24th International Symposium On Compound Semiconductors, Iscs 1997 (p. 291-294) - 1/1/1998
MOVPE growth of highly-strained piezoelectric InGaAs/GaAs quantum wells on [1 1 1]A-oriented substrates
- Kim J
- Cho S
- Sanz-Hervás A
- Majerfeld A
- Kim B
Journal Of Crystal Growth (p. 415-419) - 1/5/2001
10.1016/s0022-0248(01)00903-4 Ver en origen
- ISSN 00220248
Role of argon ion bombardment in sputtered AlN films for SAW devices
- Iborro, E
- Clement, M
- Sangrador, J
- Sanz-Hervás, A
- Navarro, AJ
- Aguilar, M
Proceedings Of The Ieee Ultrasonics Symposium (p. 411-414) - 1/12/2002
10.1109/ultsym.2002.1193431 Ver en origen
- ISSN 10510117
High energy ion characterization of sputtered AlN thin films
- García-López, J
- Morilla, Y
- Respaldiza, MA
- Clement, M
- Iborra, E
- Sanz-Hervas, A
- Sangrador, J
Diamond And Related Materials (p. 1157-1161) - 1/1/2003
10.1016/s0925-9635(02)00306-0 Ver en origen
- ISSN 09259635
Characterization of piezoelectric and pyroelectric properties of MOVPE-grown strained (111)A InGaAs/GaAs QW structures by modulation spectroscopy
- Cho S
- Kim J
- Sanz-Hervás A
- Majerfeld A
- Patriarche G
- Kim B
Physica Status Solidi A-Applications And Materials Science (p. 260-264) - 1/1/2003
10.1002/pssa.200306269 Ver en origen
- ISSN 00318965
Interfacial and piezoelectric properties of highly strained InGaAs/GaAs quantum well structures grown on (111)A GaAs substrates by MOVPE
- Kim J
- Cho S
- Sanz-Hervás A
- Majerfeld A
- Patriarche G
- Kim B
Institute Of Physics Conference Series (p. 113-116) - 1/12/2003
- ISSN 09513248
- iMarina
Piezoelectric InGaAs/GaAs/AlGaAs quantum well lasers grown on (111)A GaAs by metalorganic vapor phase epitaxy
- Kim J
- Cho S
- Majerfeld A
- Sanz-Hervas A
- Patriarche G
- Kim B
Conference On Lasers And Electro-Optics Europe - Technical Digest - 1/12/2003
Structural properties of strained piezoelectric [1 1 1]A-oriented InGaAs/GaAs quantum well structures grown by MOVPE
- Kim J
- Cho S
- Sanz-Hervás A
- Majerfeld A
- Patriarche G
- Kim B
Journal Of Crystal Growth (p. 359-363) - 1/2/2003
10.1016/s0022-0248(02)01887-0 Ver en origen
- ISSN 00220248
A model for the accurate determination of the electromechanical coupling factor of thin film SAW devices on non-insulating substrates
- Iborra, E
- Vergara, L
- Sangrador, J
- Clement, M
- Sanz-Hervas, A
- Olivares, J
Proceedings Of The Ieee Ultrasonics Symposium (p. 1880-1883) - 1/12/2004
10.1109/ultsym.2004.1418197 Ver en origen
- ISSN 10510117
Este/a investigador/a no tiene documentos de trabajo.
Este/a investigador/a no tiene informes técnicos.
Diseño electrónico avanzado: Consumo, temperatura y altas prestaciones
- ECHEVERRIA ARAMENDI, PEDRO (Participante)
- GARCIA REDONDO, FERNANDO (Miembro del equipo de trabajo)
- SANZ HERVAS, ALFREDO (Participante)
- ITUERO HERRERO, PABLO (Participante)
- LOPEZ BARRIO, CARLOS ALBERTO (Participante)
- LOPEZ VALLEJO, M. LUISA (Investigador principal (IP))
Ejecución: 01-01-2010 - 31-12-2012
Tipo: Nacional
Importe financiado: 75503,80 Euros.
- iMarina
PhD Programme in Biomedical Engineering and Health Systems
- Serrano Olmedo, José Javier (Investigador principal (IP))
- SANZ HERVAS, ALFREDO (Participante)
Ejecución: 01-01-2019 - 31-12-2020
Tipo: Internacional
Importe financiado: 15093,75 Euros.
- iMarina
Análisis y diseño de un patrón de ruido térmico de 10 MHz a 26,5 GHz en tecnología coaxial
- DIAZ MORCILLO, Alejandro (Director)
- SANZ HERVAS, ALFREDO (Director) Doctorando: Fornet Ruiz, Jaime Jose
1/1/2013
- iMarina
PREAMPLIFICADOR DE ESTADO SOLIDO DE SEÑALES DE AUDIO GENERADAS POR INSTRUMENTOS MUSICALES
- RODRIGO GARCIA, JORGE (Inventores/autores/obtentores)
- SANZ HERVAS,ALFREDO (Inventores/autores/obtentores)
2/12/2008
- iMarina
PROCEDIMIENTO DE AMPLIFICACION DE SEÑALES DE AUDIO GENERADAS POR INSTRUMENTOS MUSICALES PARA PREAMPLIFICADORES DE ESTADO SOLIDO.
- RODRIGO GARCIA, JORGE (Inventores/autores/obtentores)
- SANZ HERVAS,ALFREDO (Inventores/autores/obtentores)
2/12/2008
- iMarina
Perfiles de investigador/a
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ORCID
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Scopus Author ID