PhD Programme in Biomedical Engineering and Health Systems - Serrano Olmedo, José Javier (Investigador principal (IP)); SANZ HERVAS, ALFREDO (Participante) (2019)

Diseño electrónico avanzado: Consumo, temperatura y altas prestaciones - ECHEVERRIA ARAMENDI, PEDRO (Participante); GARCIA REDONDO, FERNANDO (Miembro del equipo de trabajo); SANZ HERVAS, ALFREDO (Participante); ITUERO HERRERO, PABLO (Participante); LOPEZ BARRIO, CARLOS ALBERTO (Participante); LOPEZ VALLEJO, M. LUISA (Investigador principal (IP)) (2010)

Combined assessment of piezoelectric AlN films using X-ray diffraction, infrared absorption and atomic force microscopy - Olivares, J; González-Castilla, S; Clement, M; Sanz-Hervás, A; Vergara, L; Sangrador, J; Iborra, E (Diamond And Related Materials, 2007)

Circuital model for the analysis of the piezoelectric response of AlN films using SAW filters - Iborra, E; Vergara, L; Sangrador, J; Clement, M; Sanz-Hervás, A; Olivares, J (Ieee Transactions On Ultrasonics Ferroelectrics And Frequency Control, 2007)

Effect of rapid thermal annealing on the crystal quality and the piezoelectric response of polycrystalline AlN films - Vergara, L; Olivares, J; Iborra, E; Clement, M; Sanz-Hervás, A; Sangrador, J (Thin Solid Films, 2006)

Fast Evaluation of Piezoelectric Aluminum Nitride Films by Infrared Optical Techniques - Clement, M; Iborra, E; Olivares, J; González-Castilla, S; Sanz-Hervás, A; Vergara, L; Sangrador, J (Proceedings Of The Ieee Ultrasonics Symposium, 2006)

Dependence of the IR reflectance LO absorption bands on the crystalline texture of AIN films - Iborra, E; Clement, M; Vergara, L; Sanz-Hervás, A; Olivares, J; Sangrador, J (Applied Physics Letters, 2006)

Degradation of the piezoelectric response of sputtered c-axis AlN thin films with traces of non-(0002) x-ray diffraction peaks - Sanz-Hervás, A; Clement, M; Iborra, E; Vergara, L; Olivares, J; Sangrador, J (Applied Physics Letters, 2006)

Instrumentación electrónica - José María Blanco Vidal, Alfredo Sanz Hervás, José Javier Serrano Olmedo (2006)

Ge and GeOx films as sacrificial layer for MEMS technology based on piezoelectric AIN: Etching and planarization processes - Sangrador, J; Olivares, J; Iborra, E; Vergara, L; Clement, M; Sanz-Hervás, A (Proceedings Of Spie - The International Society For Optical Engineering, 2005)

Assessment of the piezoelectric response of sputtered AlN films by X-ray diffraction - Iborra, E; Sanz-Hervas, A; Clement, M; Vergara, L; Olivares, J; Sangrador, J (Proceedings Of The Ieee Ultrasonics Symposium, 2005)

AlN-on-Si SAW filters: Influence of film thickness, IDT geometry and substrate conductivity - Clement, M; Vergara, L; Iborra, E; Sanz-Hervás, A; Olivares, J; Sangrador, J (Proceedings Of The Ieee Ultrasonics Symposium, 2005)

Piezoelectric actuation of microbridges using AlN - Olivares, J; Iborra, E; Clement, M; Vergara, L; Sangrador, J; Sanz-Hervás, A (Sensors And Actuators A-Physical, 2005)

Comparative study of c-axis AlN films sputtered on metallic surfaces - Sanz-Hervás A; Vergara L; Olivares J; Iborra E; Morilla Y; García-López J; Clement M; Sangrador J; Respaldiza M (Diamond And Related Materials, 2005)

A model for the accurate determination of the electromechanical coupling factor of thin film SAW devices on non-insulating substrates - Iborra, E; Vergara, L; Sangrador, J; Clement, M; Sanz-Hervas, A; Olivares, J (Proceedings Of The Ieee Ultrasonics Symposium, 2004)

SAW and BAW response of c-axis AlN thin films sputtered on platinum - Clement M; Vergara L; Olivares J; Iborra E; Sangrador J; Sanz-Hervás A; Zinck C (Proceedings Of The Ieee Ultrasonics Symposium, 2004)

Piezoelectric properties and residual stress of sputtered AlN thin films for MEMS applications - Iborra, E; Olivares, J; Clement, M; Vergara, L; Sanz-Hervás, A; Sangrador, J (Sensors And Actuators A-Physical, 2004)

Influence of oxygen and argon on the crystal quality and piezoelectric response of AlN sputtered thin films - Vergara, L; Clement, M; Iborra, E; Sanz-Hervás, A; García-López, J; Morilla, Y; Sangrador, J; Respaldiza, MA (Diamond And Related Materials, 2004)

Effect of particle bombardment on the orientation and the residual stress of sputtered AlN films for SAW devices - Iborra, E; Clement, M; Sangrador, J; Sanz-Hervás, A; Vergara, L; Aguilar, M (Ieee Transactions On Ultrasonics Ferroelectrics And Frequency Control, 2004)

SAW characteristics of AlN films sputtered on silicon substrates - Clement, M; Vergara, L; Sangrador, J; Iborra, E; Sanz-Hervás, A (Ultrasonics, 2004)

Influence of sputtering mechanisms on the preferred orientation of aluminum nitride thin films - Clement, M; Iborra, E; Sangrador, J; Sanz-Hervás, A; Vergara, L; Aguilar, M (Journal Of Applied Physics, 2003)

Influence of crystal properties on the absorption IR spectra of polycrystalline AlN thin films - Sanz-Hervás, A; Iborra, E; Clement, M; Sangrador, J; Aguilar, M (Diamond And Related Materials, 2003)

High energy ion characterization of sputtered AlN thin films - García-López, J; Morilla, Y; Respaldiza, MA; Clement, M; Iborra, E; Sanz-Hervas, A; Sangrador, J (Diamond And Related Materials, 2003)

Role of argon ion bombardment in sputtered AlN films for SAW devices - Iborro, E; Clement, M; Sangrador, J; Sanz-Hervás, A; Navarro, AJ; Aguilar, M (Proceedings Of The Ieee Ultrasonics Symposium, 2002)

Influence of strain compensation on structural and electrical properties of InAlAs/InGaAs HEMT structures grown on InP - Letartre, X; Rojo-Romeo, P; Tardy, J; Bejar, M; Gendry, M; Py, MA; Beck, M; Buhlmann, HJ; Ren, L; Villar, C; Sanz-Hervas, A; Serrano, JJ; et al. (Japanese Journal Of Applied Physics, 1999)

Growth optimization and doping with Si and Be of high quality GaN on Si(111) by molecular beam epitaxy - Sanchez-Garcia, MA; Calleja, E; Sanchez, FJ; Calle, F; Monroy, E; Basak, D; Munoz, E; Villar, C; Sanz-Hervas, A; Aguilar, M; Serrano, JJ; Blanco, JM (Journal Of Electronic Materials, 1998)

Growth kinetics and morphology of high quality AlN grown on Si(111) by plasma-assisted molecular beam epitaxy - Calleja, E; SanchezGarcia, MA; Monroy, E; Sanchez, FJ; Munoz, E; SanzHervas, A; Villar, C; Aguilar, M (Journal Of Applied Physics, 1997)

Observation of non-trigonal lattice distortion in pseudomorphic InGaAs/GaAs superlattices grown on misoriented (111)B GaAs - Sanzhervas, A; Aguilar, M; Sanchezrojas, JL; Sacedon, A; Calleja, E; Munoz, E; Villar, C; Abril, EJ; Lopez, M (Journal Of Applied Physics, 1997)

Design and characterization of two color GaAs based quantum well infrared detector structures - Sanchez-Rojas J; Guzman A; Munoz E; Sanchez J; Calleja E; Sanz-Hervas A; Villar C; Aguilar M; Montojo M; Vergara G; Gomez L (Advanced Workshop On Frontiers In Electronics, Proceedings, Wofe, 1997)

High-resolution x-ray diffraction study of piezoelectric InGaAs/GaAs multiquantum well p-i-n photodiodes grown on (111)B GaAs - Sanzhervas, A; Aguilar, M; Sanchezrojas, JL; Sacedon, A; Calleja, E; Munoz, E; Abril, EJ; Lopez, M (Applied Physics Letters, 1996)

Photoinhibition of the quantum confined Stark effect in piezoelectric multiple quantum wells - Sanchezrojas, JL; Sacedon, A; Calleja, E; Munoz, E; Sanzhervas, A; Debenito, G; Lopez, M (Physical Review b, 1996)

Probing resonant tunneling and charge accumulation via capacitance measurements in [111]-oriented InGaAs/GaAs MQW and superlattices - Sánchez-Rojas J; Sacedón A; Sanz-Hervás A; Calleja E; Muñoz E; Abril E (Solid-State Electronics, 1996)

DESIGN AND CHARACTERIZATION OF (111)B INGAAS/GAAS PIEZOELECTRIC SUPERLATTICES - Sanchezrojas, JL; Sacedon, A; Sanzhervas, A; Calleja, E; Munoz, E; Abril, EJ; Aguilar, M; Lopez, M (Semiconductor Science And Technology, 1995)

A Neverending Story: Two Centuries of Proposals to Solve the Inconveniences of an Indomitable Note on the Clarinet - Olivares, PR; Sanz-Hervás, A (Resonancias, 2022)

Análisis y diseño de un patrón de ruido térmico de 10 MHz a 26,5 GHz en tecnología coaxial - DIAZ MORCILLO, Alejandro (Director); SANZ HERVAS, ALFREDO (Director) Doctorando: Fornet Ruiz, Jaime Jose (2013)

PREAMPLIFICADOR DE ESTADO SOLIDO DE SEÑALES DE AUDIO GENERADAS POR INSTRUMENTOS MUSICALES - RODRIGO GARCIA, JORGE (Inventores/autores/obtentores); SANZ HERVAS,ALFREDO (Inventores/autores/obtentores) (2008)

PROCEDIMIENTO DE AMPLIFICACION DE SEÑALES DE AUDIO GENERADAS POR INSTRUMENTOS MUSICALES PARA PREAMPLIFICADORES DE ESTADO SOLIDO. - RODRIGO GARCIA, JORGE (Inventores/autores/obtentores); SANZ HERVAS,ALFREDO (Inventores/autores/obtentores) (2008)

Growth of InP on GaAs (001) by hydrogen-assisted low-temperature solid-source molecular beam epitaxy - Postigo, P. A.; Suarez, F.; Sanz-Hervas, A.; Sangrador, J.; Fonstad, C. G.; (Journal Of Applied Physics, 2008)

Calibration of boron concentration in CVD single crystal diamond combining ultralow energy secondary ions mass spectrometry and high resolution X-ray diffraction - Guzmand de la Mata, B.; Sanz-Hervas, A.; Dowsett, M. G.; Schwitters, M.; Twitchen, D.; (Diamond And Related Materials, 2007)

Interfacial properties of strained piezoelectric InGaAs/GaAs quantum wells grown by metalorganic vapor phase epitaxy on (111)A GaAs - Cho S; Sanz-Hervás A; Kim J; Majerfeld A; Kim B (Journal Of Applied Physics, 2004)

The role of Ge predeposition temperature in the MBE epitaxy of SiC on silicon - Morales F; Zgheib C; Molina S; Araújo D; García R; Fernández C; Sanz-Hervás A; Masri P; Weih P; Stauden T; Cimalla V; Ambacher O; et al. (Physica Status Solidi (C) Current Topics In Solid State Physics, 2004)

Influence of the Ge coverage prior to carbonization on the structure of SiC grown on Si(111) - Morales, FM; Zgheib, C; Molina, SI; Araujo, D; Garcia, R; Fernandez, C; Sanz-Hervas, A; Masri, P; Weih, P; Stauden, T; Ambacher, O; Pezoldt, J; (Materials Science Forum, 2004)

Interfacial and piezoelectric properties of highly strained InGaAs/GaAs quantum well structures grown on (111)A GaAs substrates by MOVPE - Kim J; Cho S; Sanz-Hervás A; Majerfeld A; Patriarche G; Kim B (Institute Of Physics Conference Series, 2003)

Piezoelectric InGaAs/GaAs/AlGaAs quantum well lasers grown on (111)A GaAs by metalorganic vapor phase epitaxy - Kim J; Cho S; Majerfeld A; Sanz-Hervas A; Patriarche G; Kim B (Conference On Lasers And Electro-Optics Europe - Technical Digest, 2003)

Electronic parameters and interfacial properties of GaAs/Al xGa1-xAs multiquantum wells grown on (111)A GaAs by metalorganic vapor phase epitaxy - Cho S; Sanz-Hervás A; Majerfeld A; Kim B (Physical Review b, 2003)

Structural properties of strained piezoelectric [1 1 1]A-oriented InGaAs/GaAs quantum well structures grown by MOVPE - Kim J; Cho S; Sanz-Hervás A; Majerfeld A; Patriarche G; Kim B (Journal Of Crystal Growth, 2003)

Characterization of piezoelectric and pyroelectric properties of MOVPE-grown strained (111)A InGaAs/GaAs QW structures by modulation spectroscopy - Cho S; Kim J; Sanz-Hervás A; Majerfeld A; Patriarche G; Kim B (Physica Status Solidi A-Applications And Materials Science, 2003)

Determination of the pyroelectric coefficient in strained InGaAs/GaAs quantum wells grown on (111)B GaAs substrates - Cho, S; Majerfeld, A; Sanz-Hervas, A; Sanchez, JJ; Sanchez-Rojas, JL; Izpura, I; (Journal Of Applied Physics, 2001)

MOVPE growth of highly-strained piezoelectric InGaAs/GaAs quantum wells on [1 1 1]A-oriented substrates - Kim J; Cho S; Sanz-Hervás A; Majerfeld A; Kim B (Journal Of Crystal Growth, 2001)

High-resolution X-ray diffraction study of AlAs/Al0.5Ga0.5As/GaAs quantum well structures grown by molecular beam epitaxy on (11 n)A GaAs - Villar, C; Sanz-Hervas, A; Aguilar, M; Vaccaro, PO; Abril, EJ; Lopez, M; Fujita, K (Journal Of Crystal Growth, 2000)

Interfacial properties of (111)A GaAs/AlGaAs multiquantum-well structures grown by metalorganic vapor phase epitaxy - Sanz-Hervás A; Cho S; Majerfeld A; Kim B (Applied Physics Letters, 2000)

MOVPE growth and properties of P-I-N InGaAs/GaAs strained multi-quantum well structures on (1 1 1)A GaAs substrates - Kim J; Cho S; Sanz-Hervás A; Majerfeld A; Kim B (Journal Of Crystal Growth, 2000)

Photoreflectance evaluation of MOVPE AlGaAs/GaAs multiple quantum wells on (111)A GaAs - Cho, SH; Sanz-Hervas, A; Kovalenkov, OV; Majerfeld, A; Villar, C; Kim, BW; (Materials Science And Engineering B-Advanced Functional Solid-State Materials, 1999)

Metalorganic vapor phase epitaxy growth and properties of GaAs/AlGaAs and InGaAs/GaAs quantum well structures on (111)A GaAs substrates - Cho, S; Sanz-Hervas, A; Kim, J; Majerfeld, A; Villar, C; Kim, BM; (Microelectronics Journal, 1999)

Effect of the growth parameters on the luminescence properties of high-quality GaAs/AlGaAs multiquantum wells on (111)A substrates by metal organic vapor phase epitaxy - Sanz-Hervas, A; Cho, S; Kim, J; Majerfeld, A; Villar, C; Kim, BW; (Journal Of Crystal Growth, 1998)

Direct determination of the piezoelectric field in (111) strained InGaAs/GaAs multiple quantum well p-i-n structures by photoreflectance - Dickey S; Majerfeld A; Sánchez-Rojas J; Sacedón A; Muñoz E; Sanz-Hervás A; Aguilar M; Kim B (Microelectronic Engineering, 1998)

Structural and optical properties of very high quality GaAs/AlGaAs multiple quantum well structures grown on (111)A substrates by MOVPE - Sanz-Hervas A; Cho S; Kovalenkov O; Dickey S; Majerfeld A; Villar C; Lopez M; Melliti R; Wang G; Tronc P; Kim B (Proceedings Of The Ieee 24th International Symposium On Compound Semiconductors, Iscs 1997, 1998)

Growth and characterization of (InSb)m(InP)n short period superlattices - Utzmeier T; Armelles G; Postigo P; Briones F; Castrillo P; Sanz-Hervas A; Aguilar M; Abril E (Applied Physics Letters, 1997)

Strain compensation by heavy boron doping in Si1-xGex layers grown by solid phase epitaxy - Rodriguez, A; Rodriguez, T; SanzHervas, A; Kling, A; Soares, JC; daSilva, MF; Ballesteros, C; Gwilliam, RM; (Journal Of Materials Research, 1997)

Photoreflectance study of [111] GaAs/AlGaAs quantum wells at room temperature - Wang, G; Tronc, P; Melliti, R; Mao, E; Majerfeld, A; Sanz-Hervas, A; Depeyrot, J; Kim, BW (Physica Status Solidi A-Applications And Materials Science, 1997)

High quality GaAs/AlGaAs quantum wells grown on (111)A substrates by metalorganic vapor phase epitaxy - Mao E; Dickey S; Majerfeld A; Sanz-Hervás A; Kim B (Microelectronics Journal, 1997)

Characterisation of semiconductor structures by high resolution X-ray diffraction - Sanz-Hervás A; Abril E; Paz D; de Benito G; Llorente C; Aguilar M; López M (Materials Science And Technology, 1995)

A NEW DESIGN OF A SEMICONDUCTOR BOLOMETER ON RIGID SUBSTRATE FOR FUSION PLASMA DIAGNOSTICS - IBORRA, E; SANZHERVAS, A; RODRIGUEZ, T; (Review Of Scientific Instruments, 1993)

HIGH-SENSITIVITY BOLOMETERS DEVELOPMENT - IBORRA, E; SANZHERVAS, A; RODRIGUEZ, T; OCHANDO, MA; NAVARRO, AP; (Review Of Scientific Instruments, 1992)

Una historia interminable: dos siglos de propuestas para solucionar en el clarinete las molestias de una nota indómita - Pedro Rubio Olivares Alfredo Sanz Hervás (Resonancias: Revista De Investigación Musical, 2022)

Tunable mechanical resonator with aluminum nitride piezoelectric actuation - Olivares, J; Malo, J; González, S; Iborra, E; Izpura, I; Clement, M; Sanz-Hervás, A; Sánchez-Rojas, JL; Sanz, P (Proceedings Of Spie - The International Society For Optical Engineering, 2006)

Study of high quality AlN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy - SanchezGarcia, MA; Calleja, E; Monroy, E; Sanchez, FJ; Calle, F; Munoz, E; Hervas, AS; Villar, C; Aguilar, M (M R S Internet Journal Of Nitride Semiconductor Research: (Materials Research Society), 1997)

El clarinete Sistema Romero : aspectos históricos y descripción de sus componentes mecánicos - SANZ HERVAS, ALFREDO (Director) Doctorando: Rubio Olivares, Pedro (2023)