Sanz Hervas, Alfredo alfredo.sanz@upm.es
Publications
- Articles 42
- Books 1
- Book chapters 0
- Conferences 19
- Working papers 0
- Technical reports 0
- Research projects 2
- Supervised theses 2
- Patent or software license 2
Influence of strain compensation on structural and electrical properties of InAlAs/InGaAs HEMT structures grown on InP
- Letartre, X
- Rojo-Romeo, P
- Tardy, J
- Bejar, M
- Gendry, M
- Py, MA
- Beck, M
- Buhlmann, HJ
- Ren, L
- Villar, C
- Sanz-Hervas, A
- Serrano, JJ
- Blanco, JM
- Aguilar, M
Japanese Journal Of Applied Physics (p. 1169-1173) - 1/1/1999
10.1143/jjap.38.1169 View at source
- ISSN 00214922
Growth kinetics and morphology of high quality AlN grown on Si(111) by plasma-assisted molecular beam epitaxy
- Calleja, E
- SanchezGarcia, MA
- Monroy, E
- Sanchez, FJ
- Munoz, E
- SanzHervas, A
- Villar, C
- Aguilar, M
Journal Of Applied Physics (p. 4681-4683) - 1/11/1997
10.1063/1.366208 View at source
- ISSN 00218979
Interfacial properties of strained piezoelectric InGaAs/GaAs quantum wells grown by metalorganic vapor phase epitaxy on (111)A GaAs
- Cho S
- Sanz-Hervás A
- Kim J
- Majerfeld A
- Kim B
Journal Of Applied Physics (p. 1909-1913) - 15/8/2004
10.1063/1.1765862 View at source
- ISSN 00218979
Observation of non-trigonal lattice distortion in pseudomorphic InGaAs/GaAs superlattices grown on misoriented (111)B GaAs
- Sanzhervas, A
- Aguilar, M
- Sanchezrojas, JL
- Sacedon, A
- Calleja, E
- Munoz, E
- Villar, C
- Abril, EJ
- Lopez, M
Journal Of Applied Physics (p. 3297-3305) - 1/10/1997
10.1063/1.365637 View at source
- ISSN 00218979
Influence of sputtering mechanisms on the preferred orientation of aluminum nitride thin films
- Clement, M
- Iborra, E
- Sangrador, J
- Sanz-Hervás, A
- Vergara, L
- Aguilar, M
Journal Of Applied Physics (p. 1495-1500) - 1/8/2003
10.1063/1.1587267 View at source
- ISSN 00218979
Growth of InP on GaAs (001) by hydrogen-assisted low-temperature solid-source molecular beam epitaxy
- Postigo, P. A.
- Suarez, F.
- Sanz-Hervas, A.
- Sangrador, J.
- Fonstad, C. G.;
Journal Of Applied Physics - 1/1/2008
10.1063/1.2824967 View at source
- ISSN 00218979
Determination of the pyroelectric coefficient in strained InGaAs/GaAs quantum wells grown on (111)B GaAs substrates
- Cho, S
- Majerfeld, A
- Sanz-Hervas, A
- Sanchez, JJ
- Sanchez-Rojas, JL
- Izpura, I;
Journal Of Applied Physics (p. 915-917) - 5/7/2001
10.1063/1.1379563 View at source
- ISSN 00218979
MOVPE growth and properties of P-I-N InGaAs/GaAs strained multi-quantum well structures on (1 1 1)A GaAs substrates
- Kim J
- Cho S
- Sanz-Hervás A
- Majerfeld A
- Kim B
Journal Of Crystal Growth (p. 525-529) - 1/1/2000
10.1016/s0022-0248(00)00763-6 View at source
- ISSN 00220248
Effect of the growth parameters on the luminescence properties of high-quality GaAs/AlGaAs multiquantum wells on (111)A substrates by metal organic vapor phase epitaxy
- Sanz-Hervas, A
- Cho, S
- Kim, J
- Majerfeld, A
- Villar, C
- Kim, BW;
Journal Of Crystal Growth (p. 558-563) - 15/12/1998
10.1016/s0022-0248(98)00593-4 View at source
- ISSN 00220248
High-resolution X-ray diffraction study of AlAs/Al0.5Ga0.5As/GaAs quantum well structures grown by molecular beam epitaxy on (11 n)A GaAs
Journal Of Crystal Growth (p. 214-220) - 1/6/2000
10.1016/s0022-0248(00)00368-7 View at source
- ISSN 00220248
This researcher has no book chapters.
Design and characterization of two color GaAs based quantum well infrared detector structures
- Sanchez-Rojas J
- Guzman A
- Munoz E
- Sanchez J
- Calleja E
- Sanz-Hervas A
- Villar C
- Aguilar M
- Montojo M
- Vergara G
- Gomez L
Advanced Workshop On Frontiers In Electronics, Proceedings, Wofe (p. 65-71) - 1/1/1997
- iMarina
Piezoelectric InGaAs/GaAs/AlGaAs quantum well lasers grown on (111)A GaAs by metalorganic vapor phase epitaxy
- Kim J
- Cho S
- Majerfeld A
- Sanz-Hervas A
- Patriarche G
- Kim B
Conference On Lasers And Electro-Optics Europe - Technical Digest - 1/12/2003
Comparative study of c-axis AlN films sputtered on metallic surfaces
- Sanz-Hervás A
- Vergara L
- Olivares J
- Iborra E
- Morilla Y
- García-López J
- Clement M
- Sangrador J
- Respaldiza M
Diamond And Related Materials (p. 1198-1202) - 1/1/2005
10.1016/j.diamond.2004.11.010 View at source
- ISSN 09259635
Influence of oxygen and argon on the crystal quality and piezoelectric response of AlN sputtered thin films
- Vergara, L
- Clement, M
- Iborra, E
- Sanz-Hervás, A
- García-López, J
- Morilla, Y
- Sangrador, J
- Respaldiza, MA
Diamond And Related Materials (p. 839-842) - 1/4/2004
10.1016/j.diamond.2003.10.063 View at source
- ISSN 09259635
High energy ion characterization of sputtered AlN thin films
- García-López, J
- Morilla, Y
- Respaldiza, MA
- Clement, M
- Iborra, E
- Sanz-Hervas, A
- Sangrador, J
Diamond And Related Materials (p. 1157-1161) - 1/1/2003
10.1016/s0925-9635(02)00306-0 View at source
- ISSN 09259635
Interfacial and piezoelectric properties of highly strained InGaAs/GaAs quantum well structures grown on (111)A GaAs substrates by MOVPE
- Kim J
- Cho S
- Sanz-Hervás A
- Majerfeld A
- Patriarche G
- Kim B
Institute Of Physics Conference Series (p. 113-116) - 1/12/2003
- ISSN 09513248
- iMarina
Structural properties of strained piezoelectric [1 1 1]A-oriented InGaAs/GaAs quantum well structures grown by MOVPE
- Kim J
- Cho S
- Sanz-Hervás A
- Majerfeld A
- Patriarche G
- Kim B
Journal Of Crystal Growth (p. 359-363) - 1/2/2003
10.1016/s0022-0248(02)01887-0 View at source
- ISSN 00220248
MOVPE growth of highly-strained piezoelectric InGaAs/GaAs quantum wells on [1 1 1]A-oriented substrates
- Kim J
- Cho S
- Sanz-Hervás A
- Majerfeld A
- Kim B
Journal Of Crystal Growth (p. 415-419) - 1/5/2001
10.1016/s0022-0248(01)00903-4 View at source
- ISSN 00220248
The role of Ge predeposition temperature in the MBE epitaxy of SiC on silicon
- Morales F
- Zgheib C
- Molina S
- Araújo D
- García R
- Fernández C
- Sanz-Hervás A
- Masri P
- Weih P
- Stauden T
- Cimalla V
- Ambacher O
- Pezoldt J
Physica Status Solidi (C) Current Topics In Solid State Physics (p. 341-346) - 18/5/2004
10.1002/pssc.200303940 View at source
- ISSN 18626351
Characterization of piezoelectric and pyroelectric properties of MOVPE-grown strained (111)A InGaAs/GaAs QW structures by modulation spectroscopy
- Cho S
- Kim J
- Sanz-Hervás A
- Majerfeld A
- Patriarche G
- Kim B
Physica Status Solidi A-Applications And Materials Science (p. 260-264) - 1/1/2003
10.1002/pssa.200306269 View at source
- ISSN 00318965
This researcher has no working papers.
This researcher has no technical reports.
PhD Programme in Biomedical Engineering and Health Systems
- Serrano Olmedo, José Javier (Investigador principal (IP))
- SANZ HERVAS, ALFREDO (Participante)
Period: 01-01-2019 - 31-12-2020
Type of funding: International
Amount of funding: 15093,75 Euros.
- iMarina
Diseño electrónico avanzado: Consumo, temperatura y altas prestaciones
- ECHEVERRIA ARAMENDI, PEDRO (Participante)
- GARCIA REDONDO, FERNANDO (Miembro del equipo de trabajo)
- SANZ HERVAS, ALFREDO (Participante)
- ITUERO HERRERO, PABLO (Participante)
- LOPEZ BARRIO, CARLOS ALBERTO (Participante)
- LOPEZ VALLEJO, M. LUISA (Investigador principal (IP))
Period: 01-01-2010 - 31-12-2012
Type of funding: National
Amount of funding: 75503,80 Euros.
- iMarina
Análisis y diseño de un patrón de ruido térmico de 10 MHz a 26,5 GHz en tecnología coaxial
- DIAZ MORCILLO, Alejandro (Director)
- SANZ HERVAS, ALFREDO (Director) Doctorando: Fornet Ruiz, Jaime Jose
1/1/2013
- iMarina
PREAMPLIFICADOR DE ESTADO SOLIDO DE SEÑALES DE AUDIO GENERADAS POR INSTRUMENTOS MUSICALES
- RODRIGO GARCIA, JORGE (Inventores/autores/obtentores)
- SANZ HERVAS,ALFREDO (Inventores/autores/obtentores)
2/12/2008
- iMarina
PROCEDIMIENTO DE AMPLIFICACION DE SEÑALES DE AUDIO GENERADAS POR INSTRUMENTOS MUSICALES PARA PREAMPLIFICADORES DE ESTADO SOLIDO.
- RODRIGO GARCIA, JORGE (Inventores/autores/obtentores)
- SANZ HERVAS,ALFREDO (Inventores/autores/obtentores)
2/12/2008
- iMarina
Researcher profiles
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