Calleja Pardo, Enrique enrique.calleja@upm.es
Actividades
- Artículos 276
- Libros 0
- Capítulos de libro 2
- Congresos 172
- Documentos de trabajo 0
- Informes técnicos 0
- Proyectos de investigación 19
- Tesis dirigidas 14
- Patentes o licencias de software 0
Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy
- Fernández-Garrido, S
- Kaganer, VM
- Sabelfeld, KK
- Gotschke, T
- Grandal, J
- Calleja, E
- Geelhaar, L
- Brandt, O
Nano Letters (p. 3274-80) - 10/7/2013
- ISSN 15306984
- iMarina
Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography
- Bengoechea-Encabo, A
- Albert, S
- Sanchez-Garcia, MA
- López, LL
- Estradé, S
- Rebled, JM
- Peiró, F
- Nataf, G
- de Merry, P
- Zuniga-Perez, J
- Calleja, E
Journal Of Crystal Growth (p. 1-4) - 15/8/2012
10.1016/j.jcrysgro.2011.11.069 Ver en origen
- ISSN 00220248
Selective area growth of GaN nanostructures: A key to produce high quality (11-20) a-plane pseudo-substrates
- Albert, S
- Bengoechea-Encabo, A
- Zuniga-Perez, J
- de Mierry, P
- Val, P
- Sanchez-Garcia, MA
- Calleja, E
Applied Physics Letters - 1/9/2014
10.1063/1.4894802 Ver en origen
- ISSN 00036951
Selective area growth of AIN/GaN nanocolumns on (0001) and (11-22) GaN/sapphire for semi-polar and non-polar AIN pseudo-templates
- Bengoechea-Encabo, A
- Albert, S
- Müller, M
- Xie, MY
- Veit, P
- Bertram, F
- Sanchez-Garcia, MA
- Zúñga-Pérez, J
- de Mierry, P
- Christen, J
- Calleja, E
Nanotechnology - 16/8/2017
10.1088/1361-6528/aa78e6 Ver en origen
- ISSN 09574484
Selective area growth and characterization of InGaN nanocolumns for phosphor-free white light emission
- Albert, S
- Bengoechea-Encabo, A
- Sanchez-Garcia, MA
- Calleja, E
- Jahn, U
Journal Of Applied Physics - 21/3/2013
10.1063/1.4796100 Ver en origen
- ISSN 00218979
Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies
- Albert, S
- Bengoechea-Encabo, A
- Lefebvre, P
- Barbagini, F
- Sanchez-Garcia, MA
- Calleja, E
- Jahn, U
- Trampert, A
Applied Physics Letters - 4/6/2012
10.1063/1.4728115 Ver en origen
- ISSN 00036951
Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11-22) GaN templates
- Bengoechea-Encabo, A
- Albert, S
- Zuñiga-Perez, J
- de Mierry, P
- Trampert, A
- Barbagini, F
- Sanchez-Garcia, MA
- Calleja, E
Applied Physics Letters - 9/12/2013
10.1063/1.4846455 Ver en origen
- ISSN 00036951
Selective Area Growth of InGaN/GaN Nanocolumnar Heterostructures by Plasma-Assisted Molecular Beam Epitaxy
- Albert, S.
- Bengoechea-Encabo, A. M.
- Sanchez-Garcia, M. A.
- Calleja, E.;
Semiconductors And Semimetals (p. 231-266) - 1/12/2017
10.1016/bs.semsem.2016.08.003 Ver en origen
- ISSN 00808784
Selective Area Growth of GaN Nanowires by Plasma-Assisted Molecular Beam Epitaxy
- Trampert, A
- Kong, X
- Luna, E
- Grandal, J
- Jenichen, B
Wide Band Gap Semiconductor Nanowires 1: Low-Dimensionality Effects And Growth (p. 215-243) - 22/9/2014
STRAINED PIEZOELECTRIC [111]-MULTIPLE QUANTUM-WELLS - CLAMPED OR FREE
- HUANG, XR
- MCCALLUM, DS
- HARKEN, DR
- CARTWRIGHT, AN
- SMIRL, AL
- SACEDON, A
- SANCHEZROJAS, JL
- CALLEJA, E
- MUNOZ, E;
Superlattices And Microstructures (p. 171-174) - 1/1/1994
10.1006/spmi.1994.1034 Ver en origen
- ISSN 07496036
Este/a investigador/a no tiene libros.
TEM study of (Ga, AI)N nanocolumns and embedded GaN nanodiscs
- Trampert A
- Ristic J
- Jahn U
- Calleja E
- Ploog K
Microscopy Of Semiconducting Materials 2003 (p. 167-170) - 1/1/2018
Ga(in)N nanowires grown by molecular beam epitaxy: From quantum light emitters to nanotransistors
- Gačević Ž
- Calleja E
Novel Compound Semiconductor Nanowires: Materials, Devices, And Applications (p. 319-364) - 1/1/2017
Z. Gacevic, S. Fernández-Garrido, E. Calleja, D. Hosseini, S. Estrade and F. Peiró "Structural properties of InAlN single layers nearly latice-matched to GaN grown by plasma assisted molecular beal epitaxy"
- S. Fernández-Garrido
- S. Estradé
- F. Peiró
- D. Hosseini
- Gacevic, Zarko
- Calleja Pardo, Enrique
"Structural Properties Of Inaln Single Layers Nearly Latice-Matched To Gan Grown By Plasma Assisted Molecular Beal Epitaxy" (p. 0-0) - 20/3/2011
- iMarina
Z. Gacevic, P. Lefebvre, F. Bertram, G. Schmidt, P. Veit, J. Christen, and E. Calleja "Growth and characterization of InGaN/GaN quantum dots for violet/blue applications"
- P. Lefebvre
- P. Veit
- J. Christen
- G. Schmidt
- F. Bertram
- Gacevic, Zarko
- Calleja Pardo, Enrique
Growth And Characterization Of Ingan/Gan Quantum Dots For Violet/Blue Applications (p. 0-0) - 10/7/2012
- iMarina
Z. GACEVIC, S. FERNÁNDEZ-GARRIDO, E. CALLEJA, E.LUNA, A. TRAMPERT "Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma assisted molecular beam epitaxy" 15th European Molecular Beam Epitaxy Workshop Zakopane (Poland
- Gacevic, Zarko
- Calleja Pardo, Enrique
"Growth And Characterization Of Lattice-Matched Inaln/Gan Bragg Reflectors Grown By Plasma Assisted Molecular Beam Epitaxy" (p. 0-0) - 8/3/2009
- iMarina
Z. GACEVIC, S. FERNÁNDEZ-GARRIDO, E. CALLEJA "New approach to grow high reflectivity Al(Ga)N bragg reflectors by plasma-assited molecular beam epitaxy" 8th International Conference on Nitride Semiconductors Jeju (Korea), 2009
- Gacevic, Zarko
- Calleja Pardo, Enrique
"New Approach To Grow High Reflectivity Al(Ga)N Bragg Reflectors By Plasma-Assited Molecular Beam Epitaxy" (p. 0-0) - 18/10/2009
- iMarina
Z. GACEVIC, S. FERNÁNDEZ-GARRIDO, E. CALLEJA "Current status and further challenge in MBE growth of lattice-matched InAlN/GaN Bragg reflectors" 8th International Conference on Nitride Semiconductors Jeju (Korea), 2009
- Gacevic, Zarko
- Calleja Pardo, Enrique
"Current Status And Further Challenge In Mbe Growth Of Lattice-Matched Inaln/Gan Bragg Reflectors" (p. 0-0) - 18/5/2009
- iMarina
XRD analysis of InGaN uniform layers grown on Si (111) without any buffer layers and on Sapphire
- Aseev, Pavel
- SOTO RODRIGUEZ, PAUL
- Notzel, Richard
- Gacevic, Zarko
- Sanchez Garcia, Miguel Angel
- Calleja Pardo, Enrique
Proceedings (p. 0-3) - 24/8/2014
- iMarina
Visible and solar-blind AlGaN metal-semiconductor-metal photodetectors grown on Si(111) substrates
- Pau, JL
- Muñoz, E
- Sánchez-García, MA
- Calleja, E
Physica Status Solidi A-Applications And Materials Science (p. 314-319) - 1/1/2002
10.1002/1521-396x(200208)192:2<314::aid-pssa314>3.0.co;2-y Ver en origen
- ISSN 00318965
Valence EELS analysis of multiple InGaN-QW structure for electronic properties
- S. Estradé
- N. García-Lepetit
- L. López-Conesa
- Francesca Peiró
- C. Magen
- A. Eljarrat
- Gacevic, Zarko
- Calleja Pardo, Enrique
Proceedings (p. 0-3) - 11/2/2015
- iMarina
Understanding the selective area nucleation and growth of GaN Nanocolumns by MBE using Ti nanomasks
- et al
- Sanchez Garcia, Miguel Angel
- Calleja Pardo, Enrique
Proceedings (p. 0-0) - 2/11/2011
- iMarina
Este/a investigador/a no tiene documentos de trabajo.
Este/a investigador/a no tiene informes técnicos.
Towards p-type conductivity in In0.5Ga0.5N nanocolumns on a Si (100) substrate with GaN buffer layers
- Calleja Pardo, Enrique (Investigador principal (IP))
- XIE, MENGYAO (Becario/a)
- Sanchez Garcia, Miguel Angel (Participante)
Ejecución: 15-06-2015 - 14-06-2017
Tipo: Internacional
Importe financiado: 170121,60 Euros.
- iMarina
Substrate nanopatterning by e-beam lithography to growth ordered arrays of III-Nitride nanodetectors: application to IR detectors, emitters, and new Solar Cells
- Calleja Pardo, Enrique (Investigador principal (IP))
- Sanchez Garcia, Miguel Angel (Participante)
Ejecución: 01-01-2011 - 31-12-2012
Tipo: Internacional
Importe financiado: 153917,00 Euros.
- iMarina
Smart nanostructured semiconductors for energy saving light solutions
- FERNANDEZ GARRIDO, SERGIO (Participante)
- Calleja Pardo, Enrique (Investigador principal (IP))
- GRANDAL QUINTANA, JAVIER (Participante)
- FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Participante)
- Sanchez Garcia, Miguel Angel (Participante)
- HIERRO CANO, ADRIAN (Participante)
- PRIETO MARTIN, JOSE LUIS (Participante)
- PADILLA GONZALEZ, ISIDORO (Participante)
- Gacevic, Zarko (Participante)
- Martínez Rodrigo, Javier (Participante)
- Notzel, Richard (Participante)
- Calle Gómez, Fernando (Participante)
Ejecución: 01-09-2009 - 31-08-2012
Tipo: Internacional
Importe financiado: 800650,00 Euros.
- iMarina
Nanohilos basados en GaN para sistemas de información cuántica y circuitos digitales
- FERNANDO SAAVEDRA, AMALIA LUISA (Participante)
- HERRANZ FEITO, MIGUEL (Investigador/a)
- Sanchez Garcia, Miguel Angel (Investigador principal (IP))
- FOTEINOPOULOU, AIKATERINI (Participante)
- Gacevic, Zarko (Participante)
- Calleja Pardo, Enrique (Participante)
- KARAGIANNIS, NIKOLAOS (Participante)
- LASO CARBAJO, MANUEL (Participante)
Ejecución: 01-01-2019 - 31-07-2022
Tipo: Nacional
Importe financiado: 193963,00 Euros.
- iMarina
Nanoestructuras de semiconductores como componentes par ala información cuántica
- Enrique Calleja Pardo (Investigador principal (IP))
- MONTES BAJO, MIGUEL (Investigador/a)
Ejecución: 01-01-2006 - 01-01-2009
- iMarina
Nanoestructura de Semiconductores como Componentes para La Información Cuántica
- FERNANDEZ GARRIDO, SERGIO (Participante)
- GRACIA VERANO, VICTOR (Investigador principal (IP))
- CERUTTI CERUTTI, LAURENT (Investigador principal (IP))
- RISTIC RISTIC, JELENA (Investigador principal (IP))
- SANZ MONASTERIO, MIKEL (Investigador principal (IP))
- HIERRO CANO, ADRIAN (Participante)
- MONTES BAJO, MIGUEL (Participante)
- FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Participante)
- Calleja Pardo, Enrique (Investigador principal (IP))
Ejecución: 01-12-2005 - 01-01-2010
Tipo: Regional
- iMarina
Materiales y dispositivos optoelectrónicos basados en nitruros del grupo- III
- Calleja Pardo, Enrique (Investigador principal (IP))
Ejecución: 19-12-2019 - 31-12-2021
- iMarina
Instalación/Actuación: Central de Tecnología del ISOM
- Calleja Pardo, Enrique (Investigador principal (IP))
Ejecución: 13-11-2008 - 15-10-2009
Tipo: Nacional
- iMarina
InDaN and AIGaN semi-polar and non-polar pseudo-substrates made by Molecular Beam Epitaxy by ordered coalescence of nanocrystals
- Calleja Pardo, Enrique (Investigador principal (IP))
Ejecución: 01-01-2018 - 15-09-2022
- iMarina
High quality and intrinsic Properties of InN and indium rich Nitride Alloys
- Sanchez Garcia, Miguel Angel (Investigador principal (IP))
- Calle Gómez, Fernando (Participante)
- Calleja Pardo, Enrique (Participante)
Ejecución: 01-10-2008 - 30-09-2012
Tipo: Internacional
Importe financiado: 388526,00 Euros.
- iMarina
nxGa1-xN layers, nanowires, and nanodots on Silicon for clean energy applications
- Calleja Pardo, Enrique (Director)
- Gacevic, Zarko (Director) Doctorando: Aseev, Pavel
1/1/2017
- iMarina
Investigations on III-nitrides nanostructures: application to renewable energies and bio-sensing
- Calleja Pardo, Enrique (Director)
- Gacevic, Zarko (Director) Doctorando: Soto Rodriguez, Paul Eduardo David
1/1/2016
- iMarina
Growth and characterization of group-iii nitride nanocolumnar structures - crecimiento y caracterización de estructuras nanocolumnares de nitruros dle grupo iii
- Enrique Calleja Pardo (Director) Doctorando: Jelena Ristic
1/1/2006
- iMarina
Growth and characterization of gan/aln non-polar pseudo-substrates
- Calleja Pardo, Enrique (Director) Doctorando: Fernando Saavedra, Amalia Luisa
1/1/2021
- iMarina
Fabricación, caracterización y aplicaciones de detectores de UV basados en AlGaN.
- Muñoz Merino, Elías (Director)
- Calleja Pardo, Enrique (Director) Doctorando: PAU VIZCAINO, José Luis
1/1/2003
- iMarina
Espejos de Braga de AlGaN/GaN crecidos por Epitaxia de Haces Moleculares para Dispositivos Optoelectrónicos de Cavidad Resonante
- Enrique Calleja Pardo (Director)
- Fernando Calle Gómez (Director) Doctorando: Fernández Ruano, Susana María
1/1/2004
- iMarina
Crecimiento, fabricación y caracterización de diodos electroluminiscentes basados en pozos cuánticos de InGaN
- Enrique Calleja Pardo (Director) Doctorando: Fernando Bernabé Naranjo Vega
1/6/2003
- iMarina
Crecimiento y fabricación de transistores HEMT de AlGaN/GaN por epitaxia de haces moleculares
- Enrique Calleja Pardo (Director) Doctorando: Ana Jimenez Martín
1/1/2003
- iMarina
Crecimiento y caracterización de nitruros del grupo III sobre Si (111) por epitaxia de haces moleculares.
- Calleja Pardo, Enrique (Director) Doctorando: SANCHEZ GARCIA, Miguel Angel
1/1/2000
- iMarina
Este/a investigador/a no tiene patentes o licencias de software.
Perfiles de investigador/a
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ORCID
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Scopus Author ID
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Dialnet id