Growth and characterization of gan/aln non-polar pseudo-substrates - Calleja Pardo, Enrique (Director) Doctorando: Fernando Saavedra, Amalia Luisa (2021)

A. Develop process to make full visible spectrum display emitter layer using nanocolumns. B. Develop process to make UVA emitting arrays using nanocolumns - Calleja Pardo, Enrique (Investigador principal (IP)); Sanchez Garcia, Miguel Angel (Investigador principal (IP)) (2020)

Role of high nitrogen flux in InAlN growth by plasma-assisted molecular beam epitaxy - Sawicka M; Fiuczek N; Wolny P; Feduniewicz-?muda A; Siekacz M; Kry?ko M; Nowakowski-Szkudlarek K; Smalc-Koziorowska J; Kret S; Ga?evi? ?; Calleja E; Skierbiszewski C (Journal Of Crystal Growth, 2020)

III-Nitrides Resonant Cavity Photodetector Devices - Fernández, S.; Naranjo, F.B.; Sánchez-García, M.Á.; Calleja, E. (Materials, 2020)

Materiales y dispositivos optoelectrónicos basados en nitruros del grupo- III - Calleja Pardo, Enrique (Investigador principal (IP)) (2019)

Electron Tomography of Pencil-Shaped GaN/(In,Ga)N Core-Shell Nanowires - Nicolai L; Ga?evi? ?; Calleja E; Trampert A (Nanoscale Research Letters, 2019)

Ordered arrays of defect-free GaN nanocolumns with very narrow excitonic emission line width - Fernando-Saavedra, A; Albert, S; Bengoechea-Encabo, A; Lopez-Romero, D; Niehle, M; Metzner, S; Schmidt, G; Bertram, F; Sánchez-García, MA; Trampert, A; Christen, J; Calleja, E (Journal Of Crystal Growth, 2019)

Unravelling the polarity of InN quantum dots using a modified approach of negative-spherical-aberration imaging - Rajak P; Islam M; Jiménez J; Mánuel J; Aseev P; Ga?evi?; Calleja E; García R; Morales F; Bhattacharyya S (Nanoscale, 2019)

(S)TEM methods contributions to improve the fabrication of InGaN thin films on Si, and InN nanostructures on flat Si and rough InGaN - Jimenez, J. J.; Manuel, J. M.; Aseev, P.; Soto Rodriguez, P. E. D.; Notzel, R.; Gacevic, Z.; Calleja, E.; Garcia, R.; Morales, F. M.; (Journal Of Alloys And Compounds, 2019)

InAlN growth with high nitrogen-flux by plasma-assisted molecular-beam epitaxy - et al; Calleja Pardo, Enrique (Proceedings, 2019)

Nanohilos basados en GaN para sistemas de información cuántica y circuitos digitales - FERNANDO SAAVEDRA, AMALIA LUISA (Participante); HERRANZ FEITO, MIGUEL (Investigador/a); Sanchez Garcia, Miguel Angel (Investigador principal (IP)); FOTEINOPOULOU, AIKATERINI (Participante); Gacevic, Zarko (Participante); Calleja Pardo, Enrique (Participante); KARAGIANNIS, NIKOLAOS (Participante); LASO CARBAJO, MANUEL (Participante) (2019)

GaN-based nanowires as building blocks for quantum information systems and digital electronic circuits (RTI2018-097338-B-I00) - FOTEINOPOULOU, AIKATERINI (Investigador/a); Miguel Angel Sanchez Garcia; Manuel Laso Carbajo; Enrique Calleja Pardo; Nikos Karayiannis; Zarko Gacevic; Aikaterini Foteinopoulou (Investigador principal (IP)); KARAGIANNIS, NIKOLAOS (Investigador/a) (2019)

Nanoscale Imaging of Individual AlN/GaN/AlN Quantum Disk embedded in GaN Nanowires - S. Petzold; S. Metzner; P. Veit; G. Schmidth; F. Bertram; et al.; FERNANDO SAAVEDRA, AMALIA LUISA; Sanchez Garcia, Miguel Angel; Calleja Pardo, Enrique (Proceedings, 2018)

Selective area growth of GaN nanocolumns with extremely low photoluminescence linewidth of <0.6 meV - M Niehle; D. López-Romero; A. Trampert; FERNANDO SAAVEDRA, AMALIA LUISA; Sanchez Garcia, Miguel Angel; Calleja Pardo, Enrique (Proceedings, 2018)

Unvealing GaN Polytypism in Distributed GaN/InAlN Bragg Reflectors Through HRTEM Image Simulation - Lopez-Conesa, Lluis; Antonio Perez-Omil, Jose; Gacevic, Zarko; Calleja, Enrique; Estrade, Sonia; Peiro, Francesca; (Physica Status Solidi A-Applications And Materials Science, 2018)

Effect of different buffer layers on the quality of InGaN layers grown on Si - Gómez, V.J.; Grandal, J.; Núñez-Cascajero, A.; Naranjo, F.B.; Varela, M.; Sánchez-García, M.A.; Calleja, E. (Aip Advances, 2018)

Formation mechanisms of single-crystalline InN quantum dots fabricated via droplet epitaxy - Aseev, P.; Gacevic, Z.; Manuel, J. M.; Jimenez, J. J.; Garcia, R.; Morales, F. M.; Calleja, E.; (Journal Of Crystal Growth, 2018)

TEM study of (Ga, AI)N nanocolumns and embedded GaN nanodiscs - Trampert A; Ristic J; Jahn U; Calleja E; Ploog K (Microscopy Of Semiconducting Materials 2003, 2018)

InDaN and AIGaN semi-polar and non-polar pseudo-substrates made by Molecular Beam Epitaxy by ordered coalescence of nanocrystals - Calleja Pardo, Enrique (Investigador principal (IP)) (2018)

Selective Area Growth of InGaN/GaN Nanocolumnar Heterostructures by Plasma-Assisted Molecular Beam Epitaxy - Albert, S.; Bengoechea-Encabo, A. M.; Sanchez-Garcia, M. A.; Calleja, E.; (Semiconductors And Semimetals, 2017)

Selective area growth of AIN/GaN nanocolumns on (0001) and (11-22) GaN/sapphire for semi-polar and non-polar AIN pseudo-templates - Bengoechea-Encabo, A; Albert, S; Müller, M; Xie, MY; Veit, P; Bertram, F; Sanchez-Garcia, MA; Zúñga-Pérez, J; de Mierry, P; Christen, J; Calleja, E (Nanotechnology, 2017)

Studies of free charge carrier properties in AlGaN and InGaN based structures by infrared and terahertz optical Hall effect - T. Hofmann; S. Knight; P. Kuhne; N. Armakavicius; M Shu; JT. Chen; et al; XIE, MENGYAO; Calleja Pardo, Enrique (Proceedings, 2017)

Growth of self-assembled AIN nanowires on SiO2/Si substrates - S. Lazic; M. Varela; J. Grandal; Gacevic, Zarko; Calleja Pardo, Enrique (Proceedings, 2017)

Emission of linearly polarized single photons from quantum dots contained in nonpolar, semipolar and polar sections of pencil-Like InGaN/GaN Nanowires - Ga?evi? Z; Holmes M; Chernysheva E; Müller M; Torres-Pardo A; Veit P; Bertram F; Christen J; González Calbet JM; Arakawa Y; Calleja E; Lazi? S (Proceedings, 2017)

InGaN single photon emitters in nanowires: Properties and dynamic control - et al; Calleja Pardo, Enrique (Proceedings, 2017)

MBE growth of ordered III-nitride nano/microrods: from classical/quantum light sources to nanotransistors and pseudosubstrates (Conference Presentation) - Calleja, Enrique; (Proceedings Of Spie - The International Society For Optical Engineering, 2017)

Ga(in)N nanowires grown by molecular beam epitaxy: From quantum light emitters to nanotransistors - Ga?evi? ?; Calleja E (Novel Compound Semiconductor Nanowires: Materials, Devices, And Applications, 2017)

nxGa1-xN layers, nanowires, and nanodots on Silicon for clean energy applications - Calleja Pardo, Enrique (Director); Gacevic, Zarko (Director) Doctorando: Aseev, Pavel (2017)

Oxygen-related photoluminescence quenching in selectively grown GaN nanocolumns: Dependence on diameter - Bengoechea-Encabo, A; Albert, S; Sánchez-Garcia, MA; Calleja, E (Materials Science In Semiconductor Processing, 2016)

Comparative Study of InGaN Layers Grown by PA-MBE on Si(111) Using Different Buffer Layers and Growth Conditions - F.B. Naranjo; A. Nunez-Cascajero; Sanchez Garcia, Miguel Angel; GRANDAL QUINTANA, JAVIER; Calleja Pardo, Enrique (Proceedings, 2016)

Nonpolar, semipolar and polar III-nitride dot-in-a-wire sources of linearly polarized single photons - Y. Arakawa; S. Lazic; M. Holmes; J.M González-Calbet; E. Chernysheva; A. Torres-Pardo; Gacevic, Zarko; Calleja Pardo, Enrique (Proceedings, 2016)

Fabrication on III-nitride dot-ín-a-wire single photon sources - Y. Arakawa; S. Lazic; M. Holmes; J. M. González-Calbet; E. Chernysheva; A. Torres-Pardo; Gacevic, Zarko; Calleja Pardo, Enrique (Proceedings, 2016)

Dynamic acoustic control of single photon emission from III-Nitride nanowire heterostructures - S. Lazic; J.M Calleja; H.P Van der Meulen; E. Chernysheva; Gacevic, Zarko; Calleja Pardo, Enrique (Proceedings, 2016)

Comparative study of single InGaN layers grown on Si(111) and GaN(0001) templates: The role of surface wetting and epitaxial constraint - Gómez, VJ; Gacevic, Z; Soto-Rodríguez, PED; Aseev, P; Nötzel, R; Calleja, E; Sánchez-García, MA (Journal Of Crystal Growth, 2016)

Photoelectrochemical properties of full composition InxGa1-xN/Si photoanodes - Peter C.K. Vesborg; Ib Chorkendorff; Brian Seger; Aseev, Pavel; Gacevic, Zarko; Calleja Pardo, Enrique (Photoelectrochemical Properties Of Full Composition Inxga1-Xn/Si Photoanodes, 2016)

Improving optical performance of GaN nanowires grown by selective area growth homoepitaxy: Influence of substrate and nanowire dimensions - Aseev, P.; Gacevic, Z.; Torres-Pardo, A.; Gonzalez-Calbet, J. M.; Calleja, E.; (Applied Physics Letters, 2016)

Distinguishing cubic and hexagonal phases within InGaN/GaN microstructures using electron energy loss spectroscopy - Griffiths, I. J.; Cherns, D.; Albert, S.; Bengoechea-Encabo, A.; Angel Sanchez, M.; Calleja, E.; Schimpke, T.; Strassburg, M.; (Journal Of Microscopy, 2016)

Influence of composition, strain, and electric field anisotropy on different emission colors and recombination dynamics from InGaN nanodisks in pencil-like GaN nanowires - Gacevic, Z.; Vukmirovic, N.; Garcia-Lepetit, N.; Torres-Pardo, A.; Mueller, M.; Metzner, S.; Albert, S.; Bengoechea-Encabo, A.; Bertram, F.; Veit, P.; Christen, J.; Gonzalez-Calbet, J. M.; et al. (Physical Review b, 2016)

A top-gate GaN nanowire metal-semiconductor field effect transistor with improved channel electrostatic control - ? Ga?evi?; D López-Romero; T Juan Mangas; E Calleja (Applied Physics Letters, 2016)

Titanium induced polarity inversion in ordered (In,Ga)N/GaN nanocolumns - Kong, X; Li, H; Albert, S; Bengoechea-Encabo, A; Sanchez-Garcia, MA; Calleja, E; Draxl, C; Trampert, A (Nanotechnology, 2016)

Quantitative parameters for the examination of InGaN QW multilayers by low-loss EELS - Eljarrat, Alberto; Lopez-Conesa, Lluis; Magen, Cesar; Garcia-Lepetit, Noemi; Gacevic, Zarko; Calleja, Enrique; Peiro, Francesca; Estrade, Sonia; (Physical Chemistry Chemical Physics, 2016)

Crecimiento por Epitaxia de Haces Moleculares de capas finas y nanoestructuras ordenadas de InGaN para dispositivos fotovoltaicos, sensores y generadores de hidrógeno - Calleja Pardo, Enrique (Investigador principal (IP)); Sanchez Garcia, Miguel Angel (Participante); Gacevic, Zarko (Participante); COBOS ARRIBAS, PEDRO (Participante) (2016)

Investigations on III-nitrides nanostructures: application to renewable energies and bio-sensing - Calleja Pardo, Enrique (Director); Gacevic, Zarko (Director) Doctorando: Soto Rodriguez, Paul Eduardo David (2016)

Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves - Lazic, S.; Chernysheva, E.; Gacevic, Z.; van der Meulen, H. P.; Calleja, E.; Calleja Pardo, J. M.; (Aip Advances, 2015)

InGaN-on-Si for solar water splitting: compact layers, nanowalls and nanocolumns - Waheed ul Hassan Alvi; Ameed ul Hassan Alvi; Aseev, Pavel; SOTO RODRIGUEZ, PAUL; Notzel, Richard; Gacevic, Zarko; Calleja Pardo, Enrique (Ingan-On-Si For Solar Water Splitting: Compact Layers, Nanowalls And Nanocolumns, 2015)

Demonstration of (In, Ga)N/GaN Core-Shell Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy on Ordered MOVPE GaN Pillars - Albert, S; Bengoechea-Encabo, A; Ledig, J; Schimpke, T; Sánchez-Garcia, MA; Strassburg, M; Waag, A; Calleja, E (Crystal Growth & Design, 2015)

Blue-to-green single photons from InGaN/GaN dot-in-a-nanowire ordered arrays - Chernysheva, E.; Gacevic, Z.; Garcia-Lepetit, N.; van der Meulen, H. P.; Mueller, M.; Bertram, F.; Veit, P.; Torres-Pardo, A.; Gonzalez Calbet, J. M.; Christen, J.; Calleja, E.; Calleja, J. M.; et al. (Epl, 2015)

Towards p-type conductivity in In0.5Ga0.5N nanocolumns on a Si (100) substrate with GaN buffer layers - Calleja Pardo, Enrique (Investigador principal (IP)); XIE, MENGYAO (Becario/a); Sanchez Garcia, Miguel Angel (Participante) (2015)

Correlation among Growth Conditions, Morphology, and Optical Properties of Nanocolumnar InGaN/GaN Heterostructures Selectively Grown by Molecular Beam Epitaxy - Albert, S; Bengoechea-Encabo, A; Kong, X; Sánchez-Garcia, MA; Trampert, A; Calleja, E (Crystal Growth & Design, 2015)

Nanotechnology research for optoelectronic applications at ISOM - et al; Calleja Pardo, Enrique (Proceedings, 2015)

Direct imaging of single InGaN/GaN core-shell microrods using nano-scale Scanning Transmission Electron Microscopy Cathodoluminescence - Sebastian Metzner; Peter Veit; Marcus Mueller; Juergen H. Christen; Gordon Schmidt; Frank Bertram; Anja Dempewolf; Sanchez Garcia, Miguel Angel; Calleja Pardo, Enrique (Proceedings, 2015)

Lattice pulling effect and strain relaxation in axial (In, Ga)N/GaN nanowire heterostructures grown on GaN-buffered Si(111) substrate - Kong, X; Albert, S; Bengoechea-Encabo, A; Sanchez-Garcia, MA; Calleja, E; Trampert, A (Physica Status Solidi A-Applications And Materials Science, 2015)

A two-color emitting ingan nanodisk as a site-controlled source of classical and quantum light - S. Metzner; S. Lazic; N. Vukmirovic; N. García-Lepetit; M. Müller; JM González-Calbet; JM Calleja; J. Christen; F. Bertram; E. Chernysheva; A. Torres-Pardo; Gacevic, Zarko; et al. (Proceedings, 2015)

Formation Mechanisms of GaN nanowires grown by slective area growth homoepitaxy - Gacevic, Zarko; Gomez Sanchez, Daniel; Calleja, Enrique; (Proceedings, 2015)

Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar (11(2)over-bar2) GaN templates - Niehle, M.; Trampert, A.; Albert, S.; Bengoechea-Encabo, A.; Calleja, E.; (Apl Materials, 2015)

Near-infrared emitting In-rich InGaN layers grown directly on Si: Towards the whole composition range - Aseev, Pavel; Soto Rodriguez, Paul E. D.; Gomez, Victor J.; Alvi, Naveed ul Hassan; Manuel, Jose M.; Morales, Francisco M.; Jimenez, Juan J.; Garcia, Rafael; Senichev, Alexander; Lienau, Christoph; Calleja, Enrique; Noetzel, Richard; (Applied Physics Letters, 2015)

Valence EELS analysis of multiple InGaN-QW structure for electronic properties - S. Estradé; N. García-Lepetit; L. López-Conesa; Francesca Peiró; C. Magen; A. Eljarrat; Gacevic, Zarko; Calleja Pardo, Enrique (Proceedings, 2015)

Selective Area Growth of III- Nitride Nanorods on polar, semi-polar and non-polar orientations: Device applications - Albert, S; Bengoechea-Encabo, A; Lopez-Romero, D; de Mierry, P; Zuñiga-Perez, J; Kong, X; Trampert, A; Sanchez-García, MA; Calleja, E (Proceedings Of Spie–The International Society For Optical Engineering, 2015)

Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111) - Soto Rodriguez, Paul E. D.; Aseev, Pavel; Gomez, Victor J.; Kumar, Praveen; Ul Hassan Alvi, Naveed; Calleja, Enrique; Manuel, Jose M.; Morales, Francisco M.; Jimenez, Juan J.; Garcia, Rafael; Senichev, Alexander; Lienau, Christoph; et al. (Applied Physics Letters, 2015)

Crystallographically uniform arrays of ordered (In)GaN nanocolumns - Gacevic, Z.; Bengoechea-Encabo, A.; Albert, S.; Torres-Pardo, A.; Gonzalez-Calbet, J. M.; Calleja, E.; (Journal Of Applied Physics, 2015)

Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters - Lazi? S; Chernysheva E; Ga?evi? ?; García-Lepetit N; Van Der Meulen HP; Müller M; Bertram F; Veit P; Christen J; Torres-Pardo A; González Calbet JM; Calleja E; et al. (Proceedings Of Spie - The International Society For Optical Engineering, 2015)

Advances in MBE selective area growth of III-nitride nanostructures: From NanoLEDs to pseudo substrates - Albert S; Bengoechea-Encabo A; Barbagini F; Lopez-Rormero D; Sanchez-Garcia M; Calleja E; Lefebvre P; Kong X; Jahn U; Trampert A; Müller M; Bertram F; et al. (International Journal Of High Speed Electronics And Systems, 2014)

Light-Emitting-Diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range - Bengoechea-Encabo, A; Albert, S; Lopez-Romero, D; Lefebvre, P; Barbagini, F; Torres-Pardo, A; Gonzalez-Calbet, JM; Sanchez-Garcia, MA; Calleja, E (Nanotechnology, 2014)

Selective Area Growth of GaN Nanowires by Plasma-Assisted Molecular Beam Epitaxy - Trampert, A; Kong, X; Luna, E; Grandal, J; Jenichen, B (Wide Band Gap Semiconductor Nanowires 1: Low-Dimensionality Effects And Growth, 2014)

Selective area growth of GaN nanostructures: A key to produce high quality (11-20) a-plane pseudo-substrates - Albert, S; Bengoechea-Encabo, A; Zuniga-Perez, J; de Mierry, P; Val, P; Sanchez-Garcia, MA; Calleja, E (Applied Physics Letters, 2014)

XRD analysis of InGaN uniform layers grown on Si (111) without any buffer layers and on Sapphire - Aseev, Pavel; SOTO RODRIGUEZ, PAUL; Notzel, Richard; Gacevic, Zarko; Sanchez Garcia, Miguel Angel; Calleja Pardo, Enrique (Proceedings, 2014)

Growth of InGaN/GaN core-shell structures on selectively etched GaN rods by molecular beam epitaxy - Albert, S; Bengoechea-Encabo, A; Sabido-Siller, M; Mueller, M; Schmidt, G; Metzner, S; Veit, P; Bertram, F; Sanchez-Garcia, MA; Christen, J; Calleja, E (Journal Of Crystal Growth, 2014)

Investigation of III-V Nanowires by Plan-View Transmission Electron Microscopy: InN Case Study - Luna, E; Grandal, J; Gallardo, E; Calleja, JM; Sánchez-García, MA; Calleja, E; Trampert, A (Microscopy And Microanalysis, 2014)

Selective Area Growth of III-Nitrides on polar and semi-polar orientations: from light emitters to pseudo-substrates - Calleja, E; Bengoechea-Encabo, A; Albert, S; Sanchez-García, MA; Lopez-Romero, D; Trampert, A; Jahn, U; Bertram, F; Christen, J (2014 Ieee Photonics Society Summer Topical Meeting Series, 2014)

Premio Nobel de Física 2014 - Enrique Calleja Pardo (Revista Española De Física, 2014)

Q-factor of (In,Ga)N containing III-nitride microcavity grown by multiple deposition techniques - Gacevic, Z.; Rossbach, G.; Butte, R.; Reveret, F.; Glauser, M.; Levrat, J.; Cosendey, G.; Carlin, J. -F.; Grandjean, N.; Calleja, E.; (Journal Of Applied Physics, 2013)

Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11-22) GaN templates - Bengoechea-Encabo, A; Albert, S; Zuñiga-Perez, J; de Mierry, P; Trampert, A; Barbagini, F; Sanchez-Garcia, MA; Calleja, E (Applied Physics Letters, 2013)

Uniform Low-to-High In Composition InGaN Layers Grown on Si - Aseev, Pavel; Soto Rodriguez, Paul E. D.; Kumar, Praveen; Gomez, Victor J.; Alvi, Naveed ul Hassan; Manuel, Jose M.; Morales, Francisco M.; Jimenez, Juan J.; Garcia, Rafael; Calleja, Enrique; Noetzel, Richard; (Applied Physics Express, 2013)

Group III nitride core-shell nano- and microrods for optoelectronic applications - Mandl, Martin; Wang, Xue; Schimpke, Tilman; Koelper, Christopher; Binder, Michael; Ledig, Johannes; Waag, Andreas; Kong, Xiang; Trampert, Achim; Bertram, Frank; Christen, Juergen; Barbagini, Francesca; et al. (Physica Status Solidi-Rapid Research Letters, 2013)

Potential of remote sensing techniques to improve the agriculture water footprint assessment and the virtual water trade accounting - Toulios L; Romaguera M; Calleja E; Stancalie G; Nertan A; Struzik P; Marta A; Alfonso A; Dunkel Z; Nunes J; Vuolo F (Proceedings Of Spie - The International Society For Optical Engineering, 2013)

TEM study of spontaneous formation of InGaN nanowall network directly on Si for PV - R. García; JM Manuel; JJ Jimenez; FM Morales; SOTO RODRIGUEZ, PAUL; Notzel, Richard; Calleja Pardo, Enrique (Proceedings, 2013)

Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on Si(111): from ultraviolet to infrared emission - A. Trampert; Gacevic, Zarko; Sanchez Garcia, Miguel Angel; Calleja Pardo, Enrique (Proceedings, 2013)

Coalescence of selective area growth GaN by MBE, for high quality polar, non polar and semi polar templates - J. Zúñiga-Pérez; A. Trampert; Sanchez Garcia, Miguel Angel; Calleja Pardo, Enrique (Proceedings, 2013)

A Simple Method to Model Bragg Reflectors with Transient Layers Formed at the Interfaces - N. Vukmirovic; Gacevic, Zarko; Calleja Pardo, Enrique (Proceedings, 2013)

Localized emission from the apex of GaN/(In,Ga)N/GaN - Gacevic, Zarko; Sanchez Garcia, Miguel Angel; Calleja Pardo, Enrique (Proceedings, 2013)

High In Composition InGaN for InN Quantum Dot Intermediate Band Solar Cells - SOTO RODRIGUEZ, PAUL; Notzel, Richard; Calleja Pardo, Enrique (Japanese Journal Of Applied Physics, 2013)

Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy - Fernández-Garrido, S; Kaganer, VM; Sabelfeld, KK; Gotschke, T; Grandal, J; Calleja, E; Geelhaar, L; Brandt, O (Nano Letters, 2013)

Selective area growth of InGaN/GaN nanostructures for green and white light emission - U. Jahn; A. Trampert; Sanchez Garcia, Miguel Angel; Martínez Rodrigo, Javier; Calleja Pardo, Enrique (Proceedings, 2013)

Growth and characterization of ordered In(Ga)N/GaN nanocolumnar structures on Si (111) substrates with In contents between 0 and 100% - U. Jahn; A. Trampert; Sanchez Garcia, Miguel Angel; Calleja Pardo, Enrique (Proceedings, 2013)

MBE selective area growth of polar, non-polar and semi-polar GaN and InGaN/GaN nanostructures - J. Zuñiga; A. Trampert; Sanchez Garcia, Miguel Angel; Calleja Pardo, Enrique (Proceedings, 2013)

Insight into high-reflectivity AlN/GaN Bragg reflectors with spontaneously formed (Al,Ga)N transient layers at the interfaces - Gacevic, Z.; Eljarrat, A.; Peiro, F.; Calleja, E.; (Journal Of Applied Physics, 2013)

Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns - Albert, S; Bengoechea-Encabo, A; Kong, X; Sanchez-Garcia, MA; Calleja, E; Trampert, A (Applied Physics Letters, 2013)

Spontaneous formation of InGaN nanowall network directly on Si - Soto Rodriguez, P. E. D.; Kumar, Praveen; Gomez, V. J.; Alvi, N. H.; Manuel, J. M.; Morales, F. M.; Jimenez, J. J.; Garcia, R.; Calleja, E.; Noetzel, R.; (Applied Physics Letters, 2013)

AFM electrical characterization of graphene nano LEDs - M. García-Hernández; C. Munuera; Sanchez Garcia, Miguel Angel; Martínez Rodrigo, Javier; Calle Gómez, Fernando; Calleja Pardo, Enrique (Proceedings, 2013)

Insight into the compositional and structural nano features of AlN/GaN DBRs by HAADF - Eljarrat, Alberto; Lopez-Conesa, Lluis; Magen, Cesar; Gacevic, Zarko; Fernandez-Garrido, Sergio; Calleja, Enrique; Estrade, Sonia; Peiro, Francesca (Microscopy And Microanalysis, 2013)

Near-infrared InN quantum dots on high-In composition InGaN - Soto Rodriguez, Paul E. D.; Gomez, Victor J.; Kumar, Praveen; Calleja, Enrique; Noetzel, Richard; (Applied Physics Letters, 2013)

Selective area growth and characterization of InGaN nanocolumns for phosphor-free white light emission - Albert, S; Bengoechea-Encabo, A; Sanchez-Garcia, MA; Calleja, E; Jahn, U (Journal Of Applied Physics, 2013)

Selective area growth of In(Ga)N/GaN nanocolumns on silicon substrates - A. Trampert; Sanchez Garcia, Miguel Angel; Calleja Pardo, Enrique (Proceedings, 2013)

Spectroscopy for the analysis of AlN/GaN interfaces in MBE grown distributed Bragg Reflectors - S. Fernández-Garrido; S. Estradé; L. López-Conesa; F. Peiró; C. Magen; A. Eljarrat; Gacevic, Zarko; Calleja Pardo, Enrique (Proceedings, 2013)

Electron Energy Loss Spectroscopy for the analysis of AlN/GaN interfaces in MBE grown distributed Bragg Reflectors - S. Fernández-Garrido; S. Estradé; L. López-Conesa; F. Peiró; C. Magen; A. Eljarrat; Gacevic, Zarko; Calleja Pardo, Enrique (Proceedings, 2013)

First Demonstration of Direct Growth of Planar High-In-Composition InGaN Layers on Si - Kumar, Praveen; Soto Rodriguez, Paul E. D.; Gomez, Victor J.; Alvi, Naveed H.; Calleja, Enrique; Noetzel, Richard; (Applied Physics Express, 2013)

A comprehensive diagram to grow (0001)InGaN alloys by molecular beam epitaxy - S. Fernández-Garrido; SOTO RODRIGUEZ, PAUL; Notzel, Richard; Gacevic, Zarko; Calleja Pardo, Enrique (Journal Of Crystal Growth, 2013)

A word from the editors - Calleja E; Cristoloveanu S; Kuk Y; Zaslavsky A (Solid-State Electronics, 2013)

Extensión de medida de catodoluminiscencia(CL) al rango infrarrojo en microcospio de barrido electrónico FESEM - Calleja Pardo, Enrique (Investigador principal (IP)); Sanchez Garcia, Miguel Angel (Participante); FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Participante); HIERRO CANO, ADRIAN (Participante) (2013)

ADECUACIÓN DE UN REACTOR DE EPITAXIA DE HACES MOLECULARES (MBE) PARA EL CRECIMIENTO EPITAXIAL DE NANOESTRUCTURAS SEMICONDUCTORAS - Calleja Pardo, Enrique (Investigador principal (IP)); Sanchez Garcia, Miguel Angel (Participante) (2013)

Plasmon excitation in electron energy-loss spectroscopy for determination of indium concentration in (In,Ga)N/GaN nanowires - Kong, X; Albert, S; Bengoechea-Encabo, A; Sanchez-Garcia, MA; Calleja, E; Trampert, A (Nanotechnology, 2012)

Growth and characterization of ordered InGaN/GaN nanocolumnar structures on GaN/sapphire and Si (111) substrates - U. Jahn; A. Trampert; Sanchez Garcia, Miguel Angel; Calleja Pardo, Enrique (Proceedings, 2012)

Electrical characterization of single GaN/InGaN nanorods grown by selective-area MBE - Sanchez Garcia, Miguel Angel; Calleja Pardo, Enrique (Proceedings, 2012)

Influence of substrate orientation on the morphology and optical properties of selective area growth GaN nanocolumns and InGaN quantum disks - U. Jahn; et al; A. Trampert; Sanchez Garcia, Miguel Angel; Calleja Pardo, Enrique (Proceedings, 2012)

Hybrid MBE/MOVPE grown III-nitride microcavity - M. Glauser; J. Levrat; G. Rossbach; et al; Gacevic, Zarko; Calleja Pardo, Enrique (Proceedings, 2012)

Fabrication of GaN nanorods by focused ion beam - Sanchez Garcia, Miguel Angel; Martínez Rodrigo, Javier; Calleja Pardo, Enrique (Microelectronic Engineering, 2012)

Optoelectronic properties of InAlN/GaN distributed bragg reflector heterostructure examined by valence electron energy loss spectroscopy - Eljarrat A, Estradé S, Ga?evi? Z, Fernández-Garrido S, Calleja E, Magén C, Peiró F (Microscopy And Microanalysis, 2012)

E-beam nano-patterning for the ordered growth of GaN/InGaN nanorods - Barbagini, F; Bengoechea-Encabo, A; Albert, S; Lefebvre, P; Martinez, J; Sanchez-Garcia, MA; Trampert, A; Calleja, E (Microelectronic Engineering, 2012)

Growth of InN quantum dots on InGaN with high In composition - SOTO RODRIGUEZ, PAUL; Notzel, Richard; Calleja Pardo, Enrique (Proceedings, 2012)

EELS-HAADF combination for characterization of a new AlN/GaN DBRs growth method - S Fernández-Garrido; L López-Conesa; et al; A Eljarrat; Gacevic, Zarko; Calleja Pardo, Enrique (Proceedings, 2012)

EELS-HAADF spectrum imaging for characterization of (AlGa)N multilayer heterostructures - S. Fernández-Garrido; L López-Conesa; et al; A Eljarrat; Gacevic, Zarko; Calleja Pardo, Enrique (Proceedings, 2012)

NanoLEDs with graphene electrode - Sanchez Garcia, Miguel Angel; Martínez Rodrigo, Javier; BOSCA MOJENA, ALBERTO; Calle Gómez, Fernando; Calleja Pardo, Enrique (Proceedings, 2012)

Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography - Bengoechea-Encabo, A; Albert, S; Sanchez-Garcia, MA; López, LL; Estradé, S; Rebled, JM; Peiró, F; Nataf, G; de Merry, P; Zuniga-Perez, J; Calleja, E (Journal Of Crystal Growth, 2012)

Oxygen photo-adsorption related quenching of photoluminescence in group-III nitride nanocolumns - Lefebvre, P; Albert, S; Ristic, J; Fernández-Garrido, S; Grandal, J; Sánchez-García, MA; Calleja, E (Superlattices And Microstructures, 2012)

Selective area growth of GaN/InGaN nanocolumnar heterostructures on polar, semipolar and non-polar substrates - U Jahn; et al; A. Trampert; Sanchez Garcia, Miguel Angel; Calleja Pardo, Enrique (Proceedings, 2012)

Z. Gacevic, P. Lefebvre, F. Bertram, G. Schmidt, P. Veit, J. Christen, and E. Calleja "Growth and characterization of InGaN/GaN quantum dots for violet/blue applications" - P. Lefebvre; P. Veit; J. Christen; G. Schmidt; F. Bertram; Gacevic, Zarko; Calleja Pardo, Enrique (Growth And Characterization Of Ingan/Gan Quantum Dots For Violet/Blue Applications, 2012)

Selective area growth of GaN nanocolumns by rf-plasma-assisted MBE at low temperature and under nitrogen-rich conditions - et al; Sanchez Garcia, Miguel Angel; Calleja Pardo, Enrique (Proceedings, 2012)

AlN/GaN DBR layer low-loss EELS-HAADF compositional mapping - S. Fernández-Garrido; L López-Conesa; et al; A Eljarrat; Gacevic, Zarko; Calleja Pardo, Enrique (Proceedings, 2012)

Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies - Albert, S; Bengoechea-Encabo, A; Lefebvre, P; Barbagini, F; Sanchez-Garcia, MA; Calleja, E; Jahn, U; Trampert, A (Applied Physics Letters, 2012)

Surface-related optical properties of GaN and InGaN nanocolumns - S Fernández-Garrido; P. LEFEBVRE; J. Grandal; J. Ristic; et al; Sanchez Garcia, Miguel Angel; Calleja Pardo, Enrique (Proceedings, 2012)

Graphene Electrodes For Nano-LEDs - Calle Gómez, Fernando (Proceedings, 2012)

Understanding of the nucleation and growth of ordered GaN nanocolumns by MBE on GaN - S. Fernández-Garrido; J. Ristic; J. Grandal; Calleja Pardo, Enrique (Proceedings, 2012)

3D GaN for High Efficiency Solid State Lighting - Bengoechea Encabo, Ana Mª (Participante); Calleja Pardo, Enrique (Investigador principal (IP)); Sanchez Garcia, Miguel Angel (Participante); Martínez Rodrigo, Javier (Participante); Gacevic, Zarko (Participante) (2012)

Ordered gan/InGaN nanorods arrays grown by molecular beam epitaxy for phosphor-free white light emission - Albert S; Bengoechea-Encabo A; Sanchez-GarcÍa M; Barbagini F; Calleja E; Luna E; Trampert A; Jahn U; Lefebvre P; LÓpez L; EstradÉ S; Rebled J; et al. (International Journal Of High Speed Electronics And Systems, 2012)

Células Solares de Ingan mejoradas con plasmones superficiales y fabricadas por MBE sobre sustratos de Silicio y Capas de Gan - Bengoechea Encabo, Ana Mª (Participante); YASUSHI NA, NANISHI (Participante); MCCONVILLE NA, CHRIS (Participante); Notzel, Richard (Participante); Gacevic, Zarko (Participante); SABIDO SILLER, M CARMEN (Participante); Calleja Pardo, Enrique (Participante); Sanchez Garcia, Miguel Angel (Investigador principal (IP)) (2012)

Constituent blocks of planar III - nitride microcavities grown by molecular beam epitaxy - Enrique Calleja Pardo (Director) Doctorando: Zarko Gacevic (2012)

Tomography of multilayered materials for optoelectronic applications - S. Estradé; S. Bals; S. Fernández-Garrido; Ll. Yedra; JM Rebled; H. Heidari; F. Peiró; B. Goris; Gacevic, Zarko; Calleja Pardo, Enrique (Tomography Of Multilayered Materials For Optoelectronic Applications, 2011)

Efficient phosphor-free, white light emission from ordered - Sanchez Garcia, Miguel Angel; Calleja Pardo, Enrique (Proceedings, 2011)

Understanding the selective area nucleation and growth of GaN Nanocolumns by MBE using Ti nanomasks - et al; Sanchez Garcia, Miguel Angel; Calleja Pardo, Enrique (Proceedings, 2011)

A. Eljarrat, Z. Gacevic, S. Fernández-Garrido, E. Calleja, C. Magén, S. Estradé, F. Peiró "Optical and structural properties of InAlN/GaN Bragg reflectors examined by transmission electron microscopy and electron energy loss spectroscopy" - S. Fernández-Garrido; S. Estradé; F. Peiro; C. Magen; A. Eljarrat; Gacevic, Zarko; Calleja Pardo, Enrique (Optical And Structural Properties Of Inaln/Gan Bragg Reflectors Examined By Transmission Electron Microscopy And Electron Energy Loss Spectroscop, 2011)

Optical and structural properties of InAlN/GaN Bragg reflectors examined by transmission electron microscopy and electron energy loss spectroscopy - S. Estradé; F. Peiró; C. Magen; A. Eljarrat; Gacevic, Zarko; Calleja Pardo, Enrique (Optical And Structural Properties Of Inaln/Gan Bragg Reflectors Examined By Transmission Electron Microscopy And Electron Energy Loss Spectroscop, 2011)

Polarity determination by electron energy-loss spectroscopy: application to ultra-small III-nitride semiconductor nanocolumns - Kong, X; Ristic, J; Sanchez-Garcia, MA; Calleja, E; Trampert, A (Nanotechnology, 2011)

Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates - Albert, S; Bengoechea-Encabo, A; Lefebvre, P; Sanchez-Garcia, MA; Calleja, E; Jahn, U; Trampert, A (Applied Physics Letters, 2011)

Substrate nanopatterning by e-beam lithography to growth ordered arrays of III-nitride nanodetectors, white light emitters, and solar cells, Marie Curie Researchers Symposium - Sanchez Garcia, Miguel Angel; Martínez Rodrigo, Javier; Calleja Pardo, Enrique (Proceedings, 2011)

E-beam nanopatterning for the selective area growth of III-V nitride nanorods - Sanchez Garcia, Miguel Angel; Martínez Rodrigo, Javier; Calleja Pardo, Enrique (Proceedings, 2011)

Decoupling single nanowire mobilities limited by surface scattering and bulk impurity scattering - Khanal, DR; Levander, AX; Yu, KM; Liliental-Weber, Z; Walukiewicz, W; Grandal, J; Sánchez-García, MA; Calleja, E; Wu, J (Journal Of Applied Physics, 2011)

High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy - Gacevic, Z.; Fernandez-Garrido, S.; Rebled, J. M.; Estrade, S.; Peiro, F.; Calleja, E.; (Applied Physics Letters, 2011)

Emission control of InGaN nanocolumns with growth temperature - P. LEFEBVRE; J. GRANDAL; Sanchez Garcia, Miguel Angel; Calleja Pardo, Enrique (Proceedings 9th International Conference On Nitride Semiconductors (Icns), 2011)

Control of the morphology on selective area growth of GaN nanocolumns by rf-plasma-assisted - P. Lefebvre; Sanchez Garcia, Miguel Angel; Calleja Pardo, Enrique (Proceedings, 2011)

Growth and characterization of InGaN/GaN quantum dots for violet/blue applications - P. Lefebvre; G. Schimdt; F Bertram; et al; Gacevic, Zarko; Calleja Pardo, Enrique (Proceedings, 2011)

Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks - Bengoechea-Encabo, A; Barbagini, F; Fernandez-Garrido, S; Grandal, J; Ristic, J; Sanchez-Garcia, MA; Calleja, E; Jahn, U; Luna, E; Trampert, A (Journal Of Crystal Growth, 2011)

Electrochemical capacitance voltage profiling of transition from surface electron depletion to accumulation with increasing In-content in InGaN alloys - W.M. Linhart; J. Pereiro; J. Grandal; et al; AR. Stacel; Sanchez Garcia, Miguel Angel; Muñoz Merino, Elías; Calleja Pardo, Enrique (Proceedings, 2011)

STEM-HAADF-EELS and HRTEM assessment of cubic-hexagonal transitions and In-enrichment in InAlN/GaN Bragg reflectors grown by plasma-assisted Molecular Beam Epitaxy - S. Estradé; S. Fernández Garrido; S. Conesa; J.M. Rebled; D. Hosseini; C. Magen; Gacevic, Zarko; Calleja Pardo, Enrique (Stem-Haadf-Eels And Hrtem Assessment Of Cubic-Hexagonal Transitions And In-Enrichment In Inaln/Gan Bragg Reflectors Grown By Plasma-Assisted Molecular Beam Epitaxy, 2011)

Plasma-assisted MBE growth of III-N nanorods: applications to optoelectronic devices and photovoltaics - et al; Sanchez Garcia, Miguel Angel; Calleja Pardo, Enrique (Proceedings, 2011)

Z. Gacevic, S. Fernández-Garrido, E. Calleja, D. Hosseini, S. Estrade and F. Peiró "Structural properties of InAlN single layers nearly latice-matched to GaN grown by plasma assisted molecular beal epitaxy" - S. Fernández-Garrido; S. Estradé; F. Peiró; D. Hosseini; Gacevic, Zarko; Calleja Pardo, Enrique ("Structural Properties Of Inaln Single Layers Nearly Latice-Matched To Gan Grown By Plasma Assisted Molecular Beal Epitaxy", 2011)

Structural properties of InAlN single layers nearly latice-matched to GaN grown by plasma assisted molecular beal epitaxy - S. Estradé; F. Peiró; D. Hosseini,; Gacevic, Zarko; Calleja Pardo, Enrique (Proceedings, 2011)

Radiative defects in GaN nanocolumns: Correlation with growth conditions and sample morphology - Lefebvre, P; Fernández-Garrido, S; Grandal, J; Ristic, J; Sánchez-García, MA; Calleja, E (Applied Physics Letters, 2011)

Transmission Electron Microscopy and Electron Energy Loss Spectroscopy investigations of InAlN/GaN Bragg reflectors grown by plasma-assisted Molecular Beam Epitaxy - S. Estrada; S Fernández-Garrido; F. Peiró; D. Hosseini; Gacevic, Zarko; Calleja Pardo, Enrique (Transmission Electron Microscopy And Electron Energy Loss Spectroscopy Investigations Of Inaln/Gan Bragg Reflectors Grown By Plasma-Assisted Molecular Beam Epitaxy, 2011)

InN/InGaN multiple quantum wells emitting at 1.5 mu m grown by molecular beam epitaxy - Grandal, J; Pereiro, J; Bengoechea-Encabo, A; Fernández-Garrido, S; Sánchez-García, MA; Muñoz, E; Calleja, E; Luna, E; Trampert, A (Applied Physics Letters, 2011)

Critical aspects of substrate nanopatterning for the ordered growth of GaN nanocolumns - Barbagini, Francesca; Bengoechea-Encabo, Ana; Albert, Steven; Martinez, Javier; Sanchez Garcia, Miguel Angel; Trampert, Achim; Calleja, Enrique (Nanoscale Research Letters, 2011)

(V)EELS Characterization of InAlN/GaN Distributed Bragg Reflectors - A Eljarrat; ? Ga?evi?; S Fernández-Garrido; E Calleja; C Magén; S Estradé; F Peiró (Journal Of Physics: Conference Series, 2011)

Substrate nanopatterning by e-beam lithography to growth ordered arrays of III-Nitride nanodetectors: application to IR detectors, emitters, and new Solar Cells - Calleja Pardo, Enrique (Investigador principal (IP)); Sanchez Garcia, Miguel Angel (Participante) (2011)

InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam epitaxy - Gacevic, Z.; Fernandez-Garrido, S.; Hosseini, D.; Estrade, S.; Peiro, F.; Calleja, E.; (Journal Of Applied Physics, 2010)

P. LEFEBVRE, S. ALBERT, J. RISTIC, M.-A. SÁNCHEZ-GARCÍA, E. CALLEJA. "Carrier localization and surface effects in InGaN nanocolumns grown by plasma-assisted molecular beam epitaxy" Int. Workshop on Nitride Semiconductors - IWN 2010 Tampa (USA), 2010 - S. ALBERT; J. Ristic; Sanchez Garcia, Miguel Angel; Calleja Pardo, Enrique (Carrier Localization And Surface Effects In Ingan Nanocolumns Grown By Plasma-Assisted Molecular Beam Epitaxy, 2010)

Mg doping of InGaN layers grown by PA-MBE for the fabrication of Schottky barrier photodiodes - Pereiro J; Redondo-Cubero A; Fernandez-Garrido S; Rivera C; Navarro A; Muñoz E; Calleja E; Gago R (Journal Of Physics D-Applied Physics, 2010)

S. ALBERT, J. GRANDAL, M.A. SANCHEZ-GARCIA, P. LEFEBVRE, J. RISTIC, E. CALLEJA, A. VILALTA-CLEMENTE, B. LACROIX, P. RUTERANA, E. LUNA, U. JAHN, A. TRAMPERT. "MBE growth and characterization of InN/InGaN thin films and nanostructures on GaN templates and - U. Jahn; S. ALBERT; P. Ruterana; E. Luna; B. LACROIX; A. Trampert; A. VILALTA-CLEMENTE; Sanchez Garcia, Miguel Angel; GRANDAL QUINTANA, JAVIER; Calleja Pardo, Enrique ("Mbe Growth And Characterization Of Inn/Ingan Thin Films And Nanostructures On Gan Templates And Si(111) Substrates", 2010)

A. BENGOECHEA, J. GRANDAL, S. FERNANDEZ-GARRIDO, M.A. SANCHEZ-GARCIA, F. BARBAGINI, P. LEFEBVRE, E. CALLEJA, E. LUNA, A. TRAMPERT. "Selective area growth of GaN nanocolumns by rf-plasma-assisted MBE". 16th International MBE Conference Berlin (Germany) 201 - E. Luna; A. Trampert; Sanchez Garcia, Miguel Angel; GRANDAL QUINTANA, JAVIER; Calleja Pardo, Enrique ("Selective Area Growth Of Gan Nanocolumns By Rf-Plasma-Assisted Mbe", 2010)

S. FERNÁNDEZ-GARRIDO, J. GRANDAL, P. LEFEBVRE, M.A. SÁNCHEZ-GARCÍA, E.CALLEJA. "GaN nanocolumns grown on Si(111) by plasma-assisted MBE: Correlation of structural and optical properties with growth parameters". Int. Symp. on Growth of III Nitrides (ISGN3) - GRANDAL QUINTANA, JAVIER; DEL MORAL ORTEGA, MIGUEL ANGEL; Calleja Pardo, Enrique ("Gan Nanocolumns Grown On Si(111) By Plasma- Assisted Mbe: Correlation Of Structural And Optical Properties With Growth Parameters", 2010)

GaN and InN nanocolumns as electrochemical sensing elements: Potentiometric response to KCl, pH and urea - Sofikiti, N; Chaniotakis, N; Grandal, J; Utrera, M; Sánchez-García, MA; Calleja, E (Materials Letters, 2010)

Optical properties of InN grown on Si(111) substrate - Sakalauskas, E; Schley, P; Räthel, J; Klar, TA; Müller, R; Pezoldt, J; Tonisch, K; Grandal, J; Sánchez-García, MA; Calleja, E; Vilalta-Clemente, A; Ruterana, P; et al. (Physica Status Solidi A-Applications And Materials Science, 2010)

A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111) - Fernández-Garrido, S; Grandal, J; Calleja, E; Sánchez-García, MA; López-Romero, D (Journal Of Applied Physics, 2009)

Electron accumulation layers in InN nanocolumns studied by raman scattering - Gallardo, E; Lazic, S; Calleja, JM; Agulló-Rueda, F; Grandal, J; Sánchez-García, MA; Calleja, E (Aip Conference Proceedings, 2009)

Células Solares de heterounión InGaN y alta eficiencia crecidas por MBE - FERNANDEZ GARRIDO, SERGIO (Participante); NANISHI ., YASUSHI (Participante); ARTUS SURROCA, LLUIS (Participante); Calleja Pardo, Jose Manuel (Participante); GRANDAL QUINTANA, JAVIER (Participante); Sanchez Garcia, Miguel Angel (Participante); Calleja Pardo, Enrique (Investigador principal (IP)) (2009)

J. IBAÑEZ, S. HERNÁNDEZ, E. ALARCÓN LLADÓ, R. CUSCO, L. ARTUS, E. CALLEJA, S.V. NOVIKOW, C.T. FOXON "Far infrared Transmission in AlGaN Thin Films: Normal and Oblique incidence" 8th International Conference on Nitride Semiconductors (ICNS-8) Jeju (Kore - Calleja Pardo, Enrique ("Far Infrared Transmission In Algan Thin Films: Normal And Oblique Incidence", 2009)

Z. GACEVIC, S. FERNÁNDEZ-GARRIDO, E. CALLEJA "New approach to grow high reflectivity Al(Ga)N bragg reflectors by plasma-assited molecular beam epitaxy" 8th International Conference on Nitride Semiconductors Jeju (Korea), 2009 - Gacevic, Zarko; Calleja Pardo, Enrique ("New Approach To Grow High Reflectivity Al(Ga)N Bragg Reflectors By Plasma-Assited Molecular Beam Epitaxy", 2009)

A. REDONDO-CUBERO, K. LORENZ, N. FRANCO, S. FERNÁNDEZ-GARRIDO, R. GAGO, P. J. M. SMULDERS, E. MUÑOZ, E. CALLEJA, I. M. WATSON, E. ALVES "Accurate measurement of strain in semiconductors heterostructures by high-energy ion channelling: the influence of st - Muñoz Merino, Elías; Calleja Pardo, Enrique ("Accurate Measurement Of Strain In Semiconductors Heterostructures By High-Energy Ion Channelling: The Influence Of Steering Effects", 2009)

Smart nanostructured semiconductors for energy saving light solutions - FERNANDEZ GARRIDO, SERGIO (Participante); Calleja Pardo, Enrique (Investigador principal (IP)); GRANDAL QUINTANA, JAVIER (Participante); FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Participante); Sanchez Garcia, Miguel Angel (Participante); HIERRO CANO, ADRIAN (Participante); PRIETO MARTIN, JOSE LUIS (Participante); PADILLA GONZALEZ, ISIDORO (Participante); Gacevic, Zarko (Participante); Martínez Rodrigo, Javier (Participante); Notzel, Richard (Participante); Calle Gómez, Fernando (Participante) (2009)

Breakdown of anomalous channeling with ion energy for accurate strain determination in GaN-based heterostructures - Redondo-Cubero A; Lorenz K; Gago R; Franco N; Fernández-Garrido S; Smulders P; Muoz E; Calleja E; Watson I; Alves E (Applied Physics Letters, 2009)

R. GARGALLO-CABALLERO, A. GUZMÁN, M. HOPKINSON, A. HIERRO, J. M. ULLOA, E. CALLEJA "Optoelectronic devices based on (Ga,In)(As,N) Quantum dots" 15th European Molacular Beam Epitaxy Workshop Zakopane (Poland), 2009 - ULLOA HERRERO, JOSE MARIA; HIERRO CANO, ADRIAN; Calleja Pardo, Enrique ("Optoelectronic Devices Based On (Ga,In)(As,N) Quantum Dots", 2009)

Time-resolved spectroscopy on GaN nanocolumns grown by plasma assisted molecular beam epitaxy on Si substrates - Corfdir, P.; Lefebvre, P.; Ristic, J.; Valvin, P.; Calleja, E.; Trampert, A.; Ganiere, J. -D.; Deveaud-Pledran, B.; (Journal Of Applied Physics, 2009)

Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam epitaxy - ? Ga?evi?; S Fernández?Garrido; E Calleja; E Luna; A Trampert (Physica Status Solidi (C) Current Topics In Solid State Physics, 2009)

Z. GACEVIC, S. FERNÁNDEZ-GARRIDO, E. CALLEJA "Current status and further challenge in MBE growth of lattice-matched InAlN/GaN Bragg reflectors" 8th International Conference on Nitride Semiconductors Jeju (Korea), 2009 - Gacevic, Zarko; Calleja Pardo, Enrique ("Current Status And Further Challenge In Mbe Growth Of Lattice-Matched Inaln/Gan Bragg Reflectors", 2009)

E. CALLEJA ET AL. "Challenges In The Investigation Of III-V Nanocolumns (Ncs) Using Plan-View Transmission Electron Microscopy: Application To Inn Ncs Grown On Si Substrates" 33rd Workshop On Compound Semiconductor Devices And Integrated Circuits Wocsdi - Calleja Pardo, Enrique ("Challenges In The Investigation Of Iii-V Nanocolumns (Ncs) Using Plan-View Transmission Electron Microscopy: Application To Inn Ncs Grown On Si Substrates", 2009)

A. REDONDO-CUBERO, J. PEREIRO, J. GRANDAL, K. LORENZ, N. FRANCO, R. GAGO, E. MUÑOZ, M. A. SÁNCHEZ-GARCÍA, E. CALLEJA, E. ALVES "Structural study of the epitaxial growth in InGaN/GaN heterostructures by ion beam analysis" 33rd Workshop on Compound Semico - Sanchez Garcia, Miguel Angel; GRANDAL QUINTANA, JAVIER; Muñoz Merino, Elías; Calleja Pardo, Enrique ("Structural Study Of The Epitaxial Growth In Ingan/Gan Heterostructures By Ion Beam Analysis", 2009)

E. SILLERO, O.A. WILLIAMS, V. LEBEDEV, V. CIMALLA, C. C. RÖHLIG, C. E. NEBEL, F. CALLE "Nanocrystalline diamond microelectromechanical resonators" 33rd Workshop on Compound Semiconductors and Integrated Circuits, WOCSDICE 2009. Malaga (Spain), 2009 - Calleja Pardo, Enrique ("Nanocrystalline Diamond Microelectromechanical Resonators", 2009)

Influence of steering effects on strain detection in AlGaInN/GaN heterostructures by ion channelling - Redondo-Cubero A; Lorenz K; Franco N; Fernndez-Garrido S; Gago R; Smulders P; M?oz E; Calleja E; Alves E (Journal Of Physics D-Applied Physics, 2009)

E. CALLEJA ET AL. "Modulating and Probing Surface States In Single Inn And Ingan Nanorods" 2009 MRS Spring Meeting San Francisco (USA), 2009 - Calleja Pardo, Enrique ("Modulating And Probing Surface States In Single Inn And Ingan Nanorods", 2009)

Correlating composition and luminescence in AlInGaN epilayers - Edwards, P. R.; Martin, R. W.; Bejtka, K.; O'Donnell, K. P.; Fernandez-Garrido, S.; Calleja, E.; (Superlattices And Microstructures, 2009)

E. CALLEJA ET AL. "Inn/Ingan Multiple Quantum Wells Emitting At 1.5 µm" 15th European Molecular Beam Epitaxy Workshop Zakopane (Poland), 2009 - Calleja Pardo, Enrique ("Inn/Ingan Multiple Quantum Wells Emitting At 1.5 µM", 2009)

E. CALLEJA ET AL. "Growth and Characterization of Lattice-Matched Inaln/Gan Bragg Reflectors Grown By Plasma Assisted Molecular Beam Epitaxy" 15th European Molecular Beam Epitaxy Workshop Zakopane (Poland), 2009 - Calleja Pardo, Enrique ("Growth And Characterization Of Lattice-Matched Inaln/Gan Bragg Reflectors Grown By Plasma Assisted Molecular Beam Epitaxy", 2009)

S. FERNANDEZ-GARRIDO, Z. GACEVIC, E. CALLEJA, A. REDONDO-CUBERO, R. GAGO, E.MUÑOZ "A Comprehensive Diagram to Grow Inaln Alloys By Plasma-Assisted Molecular Beam Epitaxy" 15th European Molecular Beam Epitaxy Workshop Zakopane (Poland), 2009 - Gacevic, Zarko; Muñoz Merino, Elías; Calleja Pardo, Enrique ("A Comprehensive Diagram To Grow Inaln Alloys By Plasma-Assisted Molecular Beam Epitaxy", 2009)

Z. GACEVIC, S. FERNÁNDEZ-GARRIDO, E. CALLEJA, E.LUNA, A. TRAMPERT "Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma assisted molecular beam epitaxy" 15th European Molecular Beam Epitaxy Workshop Zakopane (Poland - Gacevic, Zarko; Calleja Pardo, Enrique ("Growth And Characterization Of Lattice-Matched Inaln/Gan Bragg Reflectors Grown By Plasma Assisted Molecular Beam Epitaxy", 2009)

J. GRANDAL, A. BENGOECHEA, M. A. SÁNCHEZ-GARCÍA, E. CALLEJA, E. LUNA, A. TRAMPERT, E. GALLARDO, J.M. CALLEJA "InN/InGaN multiple quantum wells emitting at 1.5 µm" 15th European Workshop on Molecular Beam Epitaxy Zakopane (Poland), 2009 - Sanchez Garcia, Miguel Angel; GRANDAL QUINTANA, JAVIER; Calleja Pardo, Enrique ("Inn/Ingan Multiple Quantum Wells Emitting At 1.5 µM", 2009)

M. F. ROMERO, M. J. UREN, A. JIMÉNEZ, R. CUERDO, C. DUA, F. CALLE, E. MUÑOZ "Thermal storage effects in Ni/Au-gate" 7th Spanish Conference on Electronic Devices CDE-09.IEEE Electron Device Letters, 258-261,ISBN: 978-1-4244-2838-0 Santiago de Compostel - ROMERO ROJO, FATIMA; Calle Gómez, Fernando; Calleja Pardo, Enrique ("Thermal Storage Effects In Ni/Au-Gate", 2009)

E. CALLEJA ET AL. "Recent Results on III-Nitride Nanorods and Inn Qws: Growth Mechanisms, Basics And Devices" United Kingdom Nitride Consortium Annual Meeting University of Oxford (England), 2009 - Calleja Pardo, Enrique ("Recent Results On Iii-Nitride Nanorods And Inn Qws: Growth Mechanisms, Basics And Devices", 2009)

InN nanocolumns grown by plasma-assisted molecular beam epitaxy on A-plane GaN templates (vol 94, 221908, 2009) - Grandal, J; Sánchez-García, MA; Calleja, E; Gallardo, E; Calleja, JM; Luna, E; Trampert, A; Jahn, U (Applied Physics Letters, 2009)

InN nanocolumns grown by plasma-assisted molecular beam epitaxy on A-plane GaN templates - Grandal, J; Sánchez-García, MA; Calleja, E; Gallardo, E; Calleja, JM; Luna, E; Trampert, A; Jahn, A (Applied Physics Letters, 2009)

Direct immobilization of enzymes in GaN and InN nanocolumns: The urease case study - Sofikiti, N; Chaniotakis, N; Grandal, J; Utrera, M; Sanchez-Garcia, MA; Calleja, E; Iliopoulos, E; Georgakilas, A (Applied Physics Letters, 2009)

Determining surface Fermi level pinning position of InN nanowires using electrolyte gating - Khanal, DR; Walukiewicz, W; Grandal, J; Calleja, E; Wu, J (Applied Physics Letters, 2009)

Dependence of N incorporation into (Ga)InAsN QDs on Ga content probed by rapid thermal annealing - Gargallo-Caballero, R; Guzmán, A; Hopkinson, M; Ulloa, JM; Hierro, A; Calleja, E (Physica Status Solidi (C) Current Topics In Solid State Physics, 2009)

Desarrollo de Micro y Nanocavidades incluyendo regiones activas de puntos cuánticos de Nitruros-III: Aplicaciones a emisiones de luz en azul y UV. - FERNANDEZ GARRIDO, SERGIO (Participante); JAN ., UWE (Participante); TRAMPET ., ACHIM (Participante); LEFREBVE ., PIERRE (Participante); RISTIC ., JELENA (Participante); GRANJEAN ., NICOLAS (Participante); DAUDIN ., BRUNO (Participante); RODRIGUEZ CANTO, PEDRO (Participante); GODIGNON ., PHILIP (Participante); Gacevic, Zarko (Participante); UTRERA LÓPEZ, MARÍA (Participante); Calleja Pardo, Enrique (Investigador principal (IP)) (2009)

Crecimiento de nitruros del grupo III por epitaxia de haces moleculares para la fabricación de diodos electroluminiscentes en el rango visible-ultravioleta - Enrique Calleja Pardo (Director) Doctorando: Sergio Fernández Garrido (2009)

Raman scattering by coupled plasmon-LO phonons in InN nanocolumns - Lazic, S; Gailardo, E; Calleja, JM; Agulló-Rueda, F; Grandal, J; Sánchez-García, MA; Calleja, E (Physica Status Solidi c, 2008)

Band bending at the surfaces of In-rich InGaN alloys - Bailey, LR; Veal, TD; King, PDC; McConville, CF; Pereiro, J; Grandal, J; Sánchez-García, MA; Muñoz, E; Calleja, E (Journal Of Applied Physics, 2008)

Space charged region in GaN and InN nanocolumns investigated by atomic force microscopy - Niebelschütz, M; Cimalla, V; Ambacher, O; Machleidt, T; Franke, KH; Ristic, J; Grandal, J; Sánchez-García, MA; Calleja, E (Physica Status Solidi (C) Current Topics In Solid State Physics, 2008)

A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy - Fernandez-Garrido, S.; Gacevic, Z.; Calleja, E.; (Applied Physics Letters, 2008)

Instalación/Actuación: Central de Tecnología del ISOM - Calleja Pardo, Enrique (Investigador principal (IP)) (2008)

Effect of the growth temperature and the AlN mole fraction on in incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy - Fernández-Garrido S; Redondo-Cubero A; Gago R; Bertram F; Christen J; Luna E; Trampert A; Pereiro J; Muoz E; Calleja E (Journal Of Applied Physics, 2008)

Composition and luminescence of AlInGaN layers grown by plasma-assisted molecular beam epitaxy - Bejtka, K.; Edwards, P. R.; Martin, R. W.; Fernandez-Garrido, S.; Calleja, E.; (Journal Of Applied Physics, 2008)

The influence of the Ga content on the N incorporation in InAsN and GaInNAs Quantum Dots 7th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces (ESPS-NIS), Les Arcenaulx, Marseille (Francia), 2008 - M. Hopkinson; ULLOA HERRERO, JOSE MARIA; FERNANDEZ GONZALEZ, ALVARO DE GUZMAN; HIERRO CANO, ADRIAN; Calleja Pardo, Enrique (The Influence Of The Ga Content On The N Incorporation In Inasn And Gainnas Quantum Dots 7th International Workshop On Epitaxial, 2008)

Photoemission and Optical Studies of Electron Accumulation at InN and In-rich InGaN Surfaces - T.D VEAL; P.D.C KING; L.R BAILEY; C.F MCCONVILLE; Sanchez Garcia, Miguel Angel; GRANDAL QUINTANA, JAVIER; Muñoz Merino, Elías; Calleja Pardo, Enrique (Photoemission And Optical Studies Of Electron Accumulation At Inn And In-Rich Ingan Surfaces, 2008)

Time-resolved photoluminescence of GaN nanocolumns grown by molecular beam epitaxy on Si Int. Workshop on Nitride Semiconductors (IWN 2008) Montreux (Suiza), 2008 - P. Lefebvre; P. CORFDIR; J. Ristic; J-D GANIERE; E. CALLEJA; B. DEVEAUD-PLEDRAN; Calleja Pardo, Enrique (Time-Resolved Photoluminescence Of Gan Nanocolumns Grown By Molecular Beam Epitaxy On Si, 2008)

A diagram to grow InAlN layers on (0001)GaN by plasma-assisted molecular beam epitaxy International workshop on nitrides Semiconductors 2008, 6-10 de Octubre 2008 Montreux, (Suiza), 2008 - Gacevic, Zarko; Calleja Pardo, Enrique (A Diagram To Grow Inaln Layers On (0001)Gan By Plasma-Assisted Molecular Beam Epitaxy, 2008)

In-situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction International workshop on nitrides Semiconductors 2008, 6-10 de Octubre 2008 Montreux, (Suiza), 2008 - J.S. Speck; G. KOBLMÜLLER; Calleja Pardo, Enrique (In-Situ Gan Decomposition Analysis By Quadrupole Mass Spectrometry And Reflection High-Energy Electron Diffraction, 2008)

Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam epitaxy International workshop on nitrides Semiconductors 2008, 6-10 de Octubre 2008. Conferences Proceedings. Montreux, (Suiza), 2008 - E. Luna; A. Trampert; Gacevic, Zarko; Calleja Pardo, Enrique (Growth And Characterization Of Lattice-Matched Inaln/Gan Bragg Reflectors Grown By Plasma-Assisted Molecular Beam Epitaxy, 2008)

Characterization of InN nanocolumns grown by PA-MBE on a-plane GaN/r-plane Al2O3 templates International Workshop on Nitride Semiconductor 2008 Montreux, (Suiza), 2008 - U. Jahn; J.M Calleja; E. LUNA; E. Gallardo; A. Trampert; Sanchez Garcia, Miguel Angel; GRANDAL QUINTANA, JAVIER; Calleja Pardo, Enrique (Characterization Of Inn Nanocolumns Grown By Pa-Mbe On A-Plane Gan/R-Plane Al2o3 Templates, 2008)

High quality and intrinsic Properties of InN and indium rich Nitride Alloys - Sanchez Garcia, Miguel Angel (Investigador principal (IP)); Calle Gómez, Fernando (Participante); Calleja Pardo, Enrique (Participante) (2008)

Enhancement of N incorporation into (Ga)InAsN quantum dots International Symposium on Compound Semiconductors (ISCS) Friburgo (Alemania), 2008 - M. Hopkinson; ULLOA HERRERO, JOSE MARIA; FERNANDEZ GONZALEZ, ALVARO DE GUZMAN; HIERRO CANO, ADRIAN; Calleja Pardo, Enrique (Enhancement Of N Incorporation Into (Ga)Inasn Quantum Dots, 2008)

In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction - S Fernández-Garrido; G Koblmüller; E Calleja; J S Speck (Journal Of Applied Physics, 2008)

Far-infrared transmission in GaN, AlN, and AlGaN thin films grown by molecular beam epitaxy - Ibanez, J.; Hernandez, S.; Alarcon-Llado, E.; Cusco, R.; Artus, L.; Novikov, S. V.; Foxon, C. T.; Calleja, E.; (Journal Of Applied Physics, 2008)

On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy - Ristic, Jelena; Calleja, Enrique; Fernandez-Garrido, Sergio; Cerutti, Laurent; Trampert, Achim; Jahn, Uwe; Ploog, Klaus H.; (Journal Of Crystal Growth, 2008)

Correlating Composition and Luminescence Variations in III-Nitride Semiconductor Alloys Microscopy & Microanalysis Meeting Albuquerque, New Mexico (USA), 2008 - R.W MARTIN; P.R. EDWARDS; K.P O.DONNELL; K. BEJKA; I.M WATSON; Calleja Pardo, Enrique (Correlating Composition And Luminescence Variations In Iii-Nitride Semiconductor Alloys, 2008)

Growth of InN nanocolumns on a-plane GaN templates 15th International Conference on Molecular Beam Epitaxy Vancouver (Canada), 2008 - U. Jahn; J.M Calleja; E. Luna; E. Gallardo; A. Trampert; Sanchez Garcia, Miguel Angel; GRANDAL QUINTANA, JAVIER; Calleja Pardo, Enrique (Growth Of Inn Nanocolumns On A-Plane Gan Templates 15th International Conference On Molecular Beam Epitaxy, 2008)

Correlating composition and luminescence variations in III-nitride semiconductor alloys - P R Edwards; R W Martin; K Bejtka; K P O´Donnell; S Fernández-Garrido; E Calleja (Microscopy And Microanalysis, 2008)

Investigation and Manipulation of Space Charged Regions in GaN and InN Nanocolumns International Conference on Electronic Materials Sydney, (Australia), 2008 - V. CIMALLA; O. AMBACHER; N. NIEBELSCHUTZ; A. SHOBER; Sanchez Garcia, Miguel Angel; GRANDAL QUINTANA, JAVIER; Calleja Pardo, Enrique (Investigation And Manipulation Of Space Charged Regions In Gan And Inn Nanocolumns, 2008)

Correlating Composition and Luminescence Variations in AlInGaN epilayers 9th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, 2008 Toledo (España), 2008 - R.W MARTIN; P.R. EDWARDS; KP O.DONNELL; K. BEKTKA; Calleja Pardo, Enrique (Correlating Composition And Luminescence Variations In Alingan Epilayers, 2008)

Raman scattering by longitudinal optical phonons in InN nanocolumns grown on Si(111) and Si(001) substrates - Lazic, S; Gallardo, E; Calleja, JM; Agulló-Rueda, F; Grandal, J; Sánchez-Garcia, MA; Calleja, E (Physica E-Low-Dimensional Systems & Nanostructures, 2008)

Growth of InN on Silicon substrates Mini-Symposium on Physics and Applications of InN and InGaN Semiconductor Materials The Rank Prize Funds Grasmere (Inglaterra), 2008 - S. Lazic; J.M Calleja; E. Luna; E. GALLARDO; A. Trampert; Sanchez Garcia, Miguel Angel; GRANDAL QUINTANA, JAVIER; Calleja Pardo, Enrique (Growth Of Inn On Silicon Substrates, 2008)

Spatially resolved luminescence spectroscopy of single GaN/(Al,Ga)N quantum disks - Jahn, U.; Calleja, E.; Ristic, J.; Trampert, A.; Rivera, C.; (Physica Status Solidi (C) Current Topics In Solid State Physics, 2008)

Photoluminescence enhancement in quaternary III-nitrides alloys grown by molecular beam epitaxy with increasing Al content - Fernández-Garrido S; Pereiro J; González-Posada F; Muoz E; Calleja E; Redondo-Cubero A; Gago R (Journal Of Applied Physics, 2008)

Spontaneous Growth of III-Nitride nanocolumns by Molecular Beam Epitaxy: Optical, Structural and Electrical Characterization Ecole Polytechnique Fédérale de Lausanne Lausanne (Suiza), 2008 - Calleja Pardo, Enrique (2008)

High electron mobility GaN grown under N-rich conditions by plasma-assisted molecular beam epitaxy - Koblmueller, G.; Wu, F.; Mates, T.; Speck, J. S.; Fernandez-Garrido, S.; Calleja, E.; (Applied Physics Letters, 2007)

Coupled longitudinal optical phonon-plasmon modes in InN nanocolumns - Lazic, S; Calleja, JM; Agulló-Rueda, F; Sánchez-García, MA; Grandal, J; Calleja, E; Trampert, A (Aip Conference Proceedings, 2007)

Growth of freestanding GaN using pillar-epitaxial lateral overgrowth from GaN nanocolumns - Bougrioua, Z.; Gibarta, P.; Calleja, E.; Jahn, U.; Trampert, A.; Ristic, J.; Utrera, M.; Nataf, G.; (Journal Of Crystal Growth, 2007)

Phonon-plasmon coupling in electron surface accumulation layers in InN nanocolumns - Lazic, S; Gallardo, E; Calleja, JM; Agulló-Rueda, F; Grandal, J; Sánchez-Garcia, MA; Calleja, E; Luna, E; Trampert, A (Physical Review b, 2007)

In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001) GaN - Koblmuller, G.; Fernandez-Garrido, S.; Calleja, E.; Speck, J. S.; (Applied Physics Letters, 2007)

Quantum Dot Infrared Photodetector for mid-infrared detection at high temperatures - Gargallo-Caballero, R; Sanz, M; Guzmán, A; Calleja, E; Muñoz, E (2007 Spanish Conference On Electron Devices, Proceedings, 2007)

J. Grandal, M.A. Sánchez-García, E. Calleja, S. Lazic, J.M. Calleja, E. Luna, A. Trampert "Structural and optical characterization of Inn/Ingan multiple quantum wells grown by plasma assisted-MBE" 7th International Conference on Nitride Semiconductors - S. LAZIC; J.M. CALLEJA; E. Luna; A. Trampert; Sanchez Garcia, Miguel Angel; GRANDAL QUINTANA, JAVIER; Calleja Pardo, Enrique (2007)

U. Jahn, E. Calleja, J. Ristic, A. Trampert, C. Rivera "Spatially resolved luminescence spectroscopy of single GaN/(Al,Ga)N quantum disks" 7th International Conference on Nitride Semiconductors (ICNS) Las Vegas (Nevada, USA) 16 al 21 de septiembre d - U. Jahn; J. Ristic; A. Trampert; Calleja Pardo, Enrique (2007)

S. Lazić, E. Gallardo, J. M. Calleja, F. Agulló-Rueda, J. Grandal, M. A. Sánchez-García, E. Calleja, A. Trampert, E. Luna ¿Raman Scattering By Coupled Plasmon-Lo Phonons In Inn Nanocolumns¿ 7th International Conference on Nitride Semiconductors (I - S. LAZIC; J.M Calleja; F. AGULLÓ-RUEDA; E. Luna; E. GALLARDO; A. Trampert; Sanchez Garcia, Miguel Angel; GRANDAL QUINTANA, JAVIER; Calleja Pardo, Enrique (2007)

M. Niebelschütz.V. Cimalla, O. Ambacher, T. Machleidt, J. Ristic, J. Grandal, M. A. Sánchez-García. E. Calleja "Space Charged Region In Gan And Inn Nanocolumns Investigated By Atomic Force Microscopy" 7th International Conference on Nitride Semiconduc - V. CIMALLA; T. Machleidt; O. AMBACHER; M. NIEBELSCHUTZ; J. Ristic; Sanchez Garcia, Miguel Angel; GRANDAL QUINTANA, JAVIER; Calleja Pardo, Enrique (2007)

J. Ristic, C. Rivera, S. Fernández-Garrido, E. Calleja, A. Trampert, K. H. Ploog, M- Povoloskyi, A. Di Carlo ¿Improved growth mode diagram for plasma-assisted MBE growth of (0001) GaN¿ 7th International Conference on Nitride Semiconductors Bremen ( - M. POVOLOSKYI; K.H. PLOOG; J. Ristic; A. Trampert; A. di Carlo; Calleja Pardo, Enrique (2007)

J.M. Ulloa, A. Wierts, C. Çelebi, P.M. Koenraad, H. Boukari, L. Maingault, H. Mariette "Cross-Sectional Scanning Tunneling Microscopy on II-VI Semiconductor Multilayer Structures"13th International Conference on II-VI Compounds Jeju (Corea) 10 al 14 d - P.M. Koenraad; L. MAINGAULT; H. MARIETTE; H. BOUKARI; C. CELEBI; A. WIERTS; ULLOA HERRERO, JOSE MARIA (2007)

Evidence of electron accumulation at nonpolar surfaces of InN nanocolumns - Calleja, E; Grandal, J; Sánchez-García, MA; Niebelschütz, M; Cimalla, V; Ambacher, O (Applied Physics Letters, 2007)

Inelastic light scattering spectroscopy of semiconductor nitride nanocolumns - Calleja, JM; Lazic, S; Sanchez-Páramo, J; Agulló-Rueda, F; Cerutti, L; Ristic, J; Fernández-Garrido, S; Sánchez-Garcia, MA; Grandal, J; Calleja, E; Trampert, A; Jahn, U (Physica Status Solidi B-Basic Solid State Physics, 2007)

J.H. Blokland, J.M. Ulloa, U. Zeitler, P.C.M. Christianen, P.M. Koenraad, D. Reuter, A.D. Wieck, J.C. Maan "Shell-filling and correlation effects of holes in InAs quantum dots" International Conference on Electronic Properties of Two-dimensional Syste - U. Zeitler; P.M. Koenraad; P.C.M. Christianen; J.H. Blokland; A.D. Wieck; J.C. Maan; D. Reuter; ULLOA HERRERO, JOSE MARIA (2007)

I. W. D. Drouzas, J. M. Ulloa, P. M. Koenraad, D. J. Mowbray, M. A. Migliorato, M. J. Steer, H.Y. Liu, M. Hopkinson "InAs self-assembled quantum dots capped with a GaAsSb strain reducing layer: Morphology of a nanostructure with novel optical properties - P. M. Koenraad; M. J. Steer; M. HOPKINSON; I. W. D. Drouzas; H.Y. Liu; D. J. Mowbray; M. A. Migliorato; ULLOA HERRERO, JOSE MARIA (2007)

S. Lazić, E. Gallardo, J.M. Calleja, F. Agulló-Rueda, J. Grandal, M.A. Sánchez-Garcia, E. Calleja "Raman Scattering By Longitudinal Optical Phonons In Inn Nanocolumns Grown On Si(111) And Si(001) Substrates" 13th International Conference on Modulat - S. LAZIC; J. M. CALLEJA; F. AGULLÓ-RUEDA; E. GALLARDO; Sanchez Garcia, Miguel Angel; GRANDAL QUINTANA, JAVIER; Calleja Pardo, Enrique (2007)

J.M. Ulloa, P.M. Koenraad, E. Gapihan, A. Letoublon, N. Bertru, D. Fuster, Y. Gonzalez, L. Gonzalez "Atomic scale structural characterization of long wavelength InAs/InP quantum dots and wires" International Workshop on Long Wavelenght Quantum Dots: Gro - Y. González; P.M. Koenraad; N. BERTRU; L. GONZALEZ; E. GAPIHAN; D. Fuster; A. LETOUBLON; ULLOA HERRERO, JOSE MARIA (2007)

J. Grandal, M.A. Sánchez-García, E. Calleja, S. Lazic, J.M. Calleja, E. Luna, A. Trampert "Characterization Of Inn Nanocolumns Grown On Si (001) Substrates By Plasma Assisted Molecular Beam Epitaxy"European Material Research Society Spring Conference 200 - S. Lazic; J.M Calleja; E. Luna; A. Trampert; Sanchez Garcia, Miguel Angel; GRANDAL QUINTANA, JAVIER; Calleja Pardo, Enrique (2007)

M. A.Sánchez-García, J. Grandal, A. Bengoechea, D. López-Romero,E. Calleja, S. Lazic, J.M. Calleja, E. Luna, A. Trampert, M. Niebelschütz, V. Cimalla, O. Ambacher "MBE Growth And Characterization Of Inn On Silicon Substrates"European Materials Research S - V. CIMALLA; S. Lazic; O. AMBACHER; M. NIEBELSCHUTZ; E. Luna; A. Trampert; Sanchez Garcia, Miguel Angel; GRANDAL QUINTANA, JAVIER; Calleja Pardo, Enrique (2007)

E. Calleja "Self-assembled MBE growth of III-Nitride Nanocolumnar Heterostructures on Si substrates" European Materials Research Society Meeting (E-MRS) 2007 Estrasburgo (Francia) 28 de mayo al 1 Junio de 2007 - Calleja Pardo, Enrique (2007)

Cathodoluminescence spectroscopy and imaging of GaN/(Al,Ga)N nanocolumns containing quantum disks - Jahn, Uwe; Ristic, Jelena; Calleja, Enrique; (Applied Physics Letters, 2007)

S. Lazić, J.M. Calleja, F.Agulló-Rueda, M.A. Sánchez-García, J. Grandal, E. Calleja, A. Trampert "Inelastic light scattering by the longitudinal optical phonons in InN nanocolumns and compact layers" Physics of Light-Matter Coupling in nanostructu - S. LAZIC; J.M Calleja; f AGULLÓ-RUEDA; A. Trampert; Sanchez Garcia, Miguel Angel; GRANDAL QUINTANA, JAVIER; Calleja Pardo, Enrique (2007)

I. W.D. Drouzas, J. M. Ulloa, P. M. Koenraad, D. J. Mowbray, M. Steer, H. Y. Liu, M. Hopkinson "InAs self-assembled quantum dots with a GaAsSb strain reducing layer: Structural and compositional analysis by cross sectional scanning tunnelling microscopy" - P. M. Koenraad; M. Hopkison; M. Steer; I. W.D. Drouzas; H. Y. Liu; D. J. Mowbray; ULLOA HERRERO, JOSE MARIA (2007)

J. M. Ulloa, C. Çelebi, P. Offermans, P.M. Koenraad, A. Simon, E. Gapihan, A. Letoublon, N. Bertru, I. Drouzas, D.J. Mowbray, M.J. Steer, M. Hopkinson "Capping of InAs quantum dots studied at the atomic scale by cross-sectional scanning tunneling micros - P.M. Koenraad; P. Offermans; N. Bertru; M.J. Steer; M. Hopkinson; I. Drouzas; E. Gapihan; D.J. Mowbray; C. Çelebi; A. Letoublon; A. Simon; ULLOA HERRERO, JOSE MARIA (2007)

J. M. Ulloa, P. M. Koenraad, E. Gapihan, A. Letoublon, N. Bertru "Double capping of InAs/InP (311)B quantum dots studied by cross-sectional scanning tunneling microscopy" One day Quantum Dot Meeting 2007 Nottingham (UK) 2 al 5 de abril de 2007 2007 - P. M. Koenraad; N. Bertru; E. Gapihan; A. Letoublon; ULLOA HERRERO, JOSE MARIA (2007)

K. Bejtka, R.W. Martin, S. Fernández-Garrido, A. Redondo-Cubero, F. González-Posada, E. Calleja "Composition and luminescence of AlInGaN layers grown by MBE" 14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (ESPAÑA) 5 al 7 - R.W. Martin; K. Bejtka; A. Redondo-Cubero; Calleja Pardo, Enrique (2007)

S. Fernández-Garrido, G. Koblmüller, E. Calleja, J. S. Speck ¿In-Situ Gan Decomposition Analysis By Quadrupole Mass Spectrometry And Reflection High-Energy Electron Diffraction¿ 14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Grana - S. SPECK; G. KOBLMÜLLER; Calleja Pardo, Enrique (2007)

G. Fransen, T. Suski, J. Ristic, E. Calleja "Anomalous Hydrostatic Pressure Dependence Of Pl In Pambe-Grown Nanocolumnar Gan And Gan/Algan Qdiscs" 14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (ESPAÑA) 5 al 7 de marzo de - T. SUSKI; J. Ristic; G. FRANSEN; Calleja Pardo, Enrique (2007)

J. Grandal, A.Bengoechea, M.A. Sánchez-García, E. Calleja, E. Luna, A. Trampert, M. Niebelschütz, V. Cimalla "Structural Characterization Of Inn-Based Layers Grown On Si (111) And Si (001) Substrates By Mbe" 14th European Molecular Beam Epitaxy Worksho - V. CIMALLA; M. NIEBELSCHUTZ; E. Luna; A TRAMPERT; Sanchez Garcia, Miguel Angel; GRANDAL QUINTANA, JAVIER; Calleja Pardo, Enrique (2007)

G.Koblmueller, S. Fernandez-Garrido, J. S. Brown, E.Calleja, J. S. Speck "Improved growth mode diagram for plasma-assisted MBE growth of (0001) GaN"14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (ESPAÑA) 5 al 7 de marzo de 2 - J.S SPECK; J.S BROWN; G. KOBLMÜLLER; Calleja Pardo, Enrique (2007)

M. Utrera, J. Ristić, S. Fernández-Garrido, L. Cerutti, G. Fuentes, E. Calleja, A. Trampert, U. Jahn, K. H. Ploog "Ordered growth of GaN Nanostructures on Si by MBE" 14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (Esp - U. Jahn; L. CERUTTI; K.H. PLOOG; J. Ristic; A. Trampert; UTRERA LÓPEZ, MARÍA; FUENTES IRIARTE, GONZALO; Calleja Pardo, Enrique (2007)

Crystal damage assessment of Be+-implanted GaN by UV Raman scattering - Pastor, D.; Ibanez, J.; Cusco, R.; Artus, L.; Gonzalez-Diaz, G.; Calleja, E.; (Semiconductor Science And Technology, 2007)

R. Gargallo-Caballero, M.Sanz, Á.Guzmán, E.Calleja, E.Muñoz "High Temperature Multiquantum Dot Infrared Photodetectors Using Inas Self-Assembled Quantum Dots" 6th Spanish Conference on Electronic Devices CDE-07 El Escorial, Madrid (España) 31 de enero - M SANZ; FERNANDEZ GONZALEZ, ALVARO DE GUZMAN; Calleja Pardo, Enrique (2007)

R. Gargallo-Caballero, M. Sanz, Á. Guzmán, E. Calleja, E. Muñoz "Quantum Dot Infrared Photodetector for mid-infrared detection at high temperatures"6th Spanish Conference on Electronic Devices CDE-07 El Escorial, Madrid (España) 31 de enero al 2 de fe - M SANZ; FERNANDEZ GONZALEZ, ALVARO DE GUZMAN; Muñoz Merino, Elías[et al] (2007)

K. Bejtka, R.W. Martin, S. Fernández-Garrido, E. Calleja, A. Redondo-Cubero, F. González-Posada "Composition and luminescence of AlInGaN layers grown by PA-MBE" United Kingdom Nitride Consortium 2007 Cambridge (U.K) 4 al 5 de enero de 2007 - R.W. Martin; K. Bejtka; E. Redondo-Cubero; Calleja Pardo, Enrique (2007)

Growth, morphology, and structural properties of group-III-nitride nanocolumns and nanodisks - Calleja, E; Ristic, J; Fernández-Garrido, S; Cerutti, L; Sánchez-García, MA; Grandal, J; Trampert, A; Jahn, U; Sánchez, G; Griol, A; Sánchez, B (Physica Status Solidi B-Basic Solid State Physics, 2007)

Electrical performance of gallium nitride nanocolumns - Nebeschuetz, M.; Cimalla, V.; Ambacher, O.; Machleidt, T.; Ristic, J.; Calleja, E.; (Physica E-Low-Dimensional Systems & Nanostructures, 2007)

Accommodation mechanism of InN nanocolumns grown on Si(111) substrates by molecular beam epitaxy - Grandal, J; Sánchez-García, MA; Calleja, E; Luna, E; Trampert, A (Applied Physics Letters, 2007)

The effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire - Pastor, D.; Cusco, R.; Artus, L.; Gonzalez-Diaz, G.; Iborra, E.; Jimenez, J.; Peiro, F.; Calleja, E.; (Journal Of Applied Physics, 2006)

Correlation between quantum well morphology, carrier localization and the optoelectronic properties of GaInNAs/GaAs light emitting diodes - Ulloa, JM; Hierro, A; Miguel-Sánchez, J; Guzmán, A; Chauveau, JM; Trampert, A; Tournié, E; Calleja, E (Semiconductor Science And Technology, 2006)

Epitaxial growth and characterization of InN nanorods and compact layers on silicon substrates - Sánchez-García, MA; Grandal, J; Calleja, E; Lazic, S; Calleja, JM; Trampert, A (Physica Status Solidi B-Basic Solid State Physics, 2006)

Wurtzite GaN nanocolumns grown on Si(001) by molecular beam epitaxy - Lazic, Snezana; Calleja Pardo, Jose Manuel; Cerutti, L; Ristic, J; Fernandez-Garrido, S; Calleja, E; Trampert, A; Ploog, K H; Calleja, J M (Applied Physics Letters, 2006)

Substrate influence on the high-temperature annealing behavior of GaN : Si vs. sapphire - Pastor, D.; Cusco, R.; Artus, L.; Iborra, E.; Jimenez, J.; Peiro, F.; Gonzalez-Diaz, G.; Calleja, E.; (Materials Research Society Symposium - Proceedings, 2006)

Nanoestructuras de semiconductores como componentes par ala información cuántica - Enrique Calleja Pardo (Investigador principal (IP)); MONTES BAJO, MIGUEL (Investigador/a) (2006)

Crecimiento y caracterización de estructuras nanocolumnares de nitruros DLE grupo III. - Calleja Pardo, Enrique (Director) Doctorando: RISTIC, Jelena (2006)

Growth and characterization of group-iii nitride nanocolumnar structures - crecimiento y caracterización de estructuras nanocolumnares de nitruros dle grupo iii - Enrique Calleja Pardo (Director) Doctorando: Jelena Ristic (2006)

Morphology and optical properties of InN layers grown by molecular beam epitaxy on silicon substrates - Grandal, J; Sánchez-García, MA; Calle, F; Calleja, E (Physica Status Solidi (C) Current Topics In Solid State Physics, 2005)

Extended X-ray absorption fine structure studies of InGaN epilayers - Katchkanov V; O'Donnell' K; Mosselmans J; Hernandez S; Martin R; Nanishi Y; Kurouchi M; Watson I; Van Der Stricht W; Calleja E (Materials Research Society Symposium - Proceedings, 2005)

Carrier-confinement effects in nanocolumnar GaN/AlxGa1-xN quantum disks grown by molecular-beam epitaxy - Ristic, J; Rivera, C; Calleja, E; Fernandez-Garrido, S; Povoloskyi, M; Di Carlo, A; (Physical Review b, 2005)

Correlation between the performance of double-barrier quantum-well infrared photodetectors and their microstructure: On the origin of the photovoltaic effect - Luna, E; Trampert, A; Guzmán, A; Calleja, E (Journal Of Applied Physics, 2005)

Raman-scattering study of the InGaN alloy over the whole composition range - Hernandez, S; Cusco, R; Pastor, D; Artus, L; O'Donnell, KP; Martin, RW; Watson, IM; Nanishi, Y; Calleja, E; (Journal Of Applied Physics, 2005)

Resonant Raman study of strain and composition in InGaN multiquantum wells - Lazi?, S.; Calleja, J.M.; Naranjo, F.B.; Fernández, S.; Calleja, E. (Aip Conference Proceedings, 2005)

Room. temperature performance of low threshold 1.34-1.44-mu m GaInNAs-GaAs quantum-well lasers grown by molecular beam epitaxy - Hierro, A; Ulloa, JM; Calleja, E; Damilano, B; Barjon, J; Duboz, JY; Massies, J (Ieee Photonics Technology Letters, 2005)

Plasma-assisted molecular beam epitaxy of nitride-based photodetectors for UV and visible applications - Pau J; Pereiro J; Rivera C; Muñoz E; Calleja E (Journal Of Crystal Growth, 2005)

Columnar AlGaN/GaN nanocavities with AlN/GaN Bragg reflectors grown by molecular beam epitaxy on Si(111) - Risti? J, Calleja E, Trampert A, Fernández-Garrido S, Rivera C, Jahn U, Ploog KH (Physical Review Letters, 2005)

Pressure behavior of beryllium-acceptor level in gallium nitride - Teisseyre, H.; Gorczyca, I.; Christensen, N.E.; Svane, A.; Naranjo, F.B.; Calleja, E. (Journal Of Applied Physics, 2005)

Growth and in situ annealing conditions for long-wavelength (Ga, In)(N, As)/GaAs lasers - Damilano, B; Barjon, J; Duboz, JY; Massies, J; Hierro, A; Ulloa, JM; Calleja, E (Applied Physics Letters, 2005)

Resonant Raman scattering in strained and relaxed InGaN/GaN multi-quantum wells - Lazi?, S.; Moreno, M.; Calleja, J.M.; Trampert, A.; Ploog, K.H.; Naranjo, F.B.; Fernandez, S.; Calleja, E. (Applied Physics Letters, 2005)

GaN/AlGaN nanocavities with AlN/GaN Bragg reflectors grown in AlGaN nanocolumns by plasma assisted MBE - J Ristic; E Calleja; S Fernández-Garrido (Physica Status Solidi A-Applications And Materials Science, 2005)

Effect of the implantation temperature on lattice damage of Be+-implanted GaN - Pastor, D; Cusco, R; Artus, L; Gonzalez-Diaz, G; Fernandez, S; Calleja, E; (Semiconductor Science And Technology, 2005)

Carrier dynamics and recombination in GaN quantum discs embedded in AlGaN nanocolumns - Zamfirescu M; Abbarchi M; Gurioli M; Vinattieri A; Risti? J; Calleja E (Physica Status Solidi (C) Current Topics In Solid State Physics, 2005)

Study of piezoelectric field in GaN quantum discs embedded in AlGaN nanocolumns - Zamfirescu M; Gurioli M; Vinattieri A; Risti J; Calleja E (Physica Status Solidi (C) Current Topics In Solid State Physics, 2005)

Optoelectronic properties of 2-D and 3-D-grown GaInNAs/GaAs QW light emitting diodes and laser diodes - Ulloa, JM; Hierro, A; Miguel-Sanchez, J; Guzman, A; Trampert, A; Sanchez-Rojas, JL; Calleja, E (Iee Proceedings-Optoelectronics, 2004)

Efficiency optimization of p-type doping in GaN : Mg layers grown by molecular-beam epitaxy - Naranjo, F.B.; Calleja, E.; Bougrioua, Z.; Trampert, A.; Kong, X.; Ploog, K.H. (Journal Of Crystal Growth, 2004)

Nitride-based photodetectors: From visible to X-ray monitoring - Pau J; Rivera C; Pereiro J; Muñoz E; Calleja E; Schühle U; Frayssinet E; Beaumont B; Faurie J; Gibart P (Superlattices And Microstructures, 2004)

Dominant carrier recombination mechanisms in GaInNAs/GaAs quantum well light-emitting diodes - Ulloa, JM; Hierro, A; Miguel-Sánchez, J; Guzmán, A; Tournié, E; Sánchez-Rojas, JL; Calleja, E (Applied Physics Letters, 2004)

Response of ultra-low dislocation density GaN photodetectors in the near- and vacuum-ultraviolet - Pau J; Rivera C; Muñoz E; Calleja E; Schühle U; Frayssinet E; Beaumont B; Faurie J; Gibart P (Journal Of Applied Physics, 2004)

Local vibrational modes of H complexes in Mg-doped GaN grown by molecular beam epitaxy - Cuscó, R.; Artús, L.; Pastor, D.; Naranjo, F.B.; Calleja, E. (Applied Physics Letters, 2004)

Espejos de Braga de AlGaN/GaN crecidos por Epitaxia de Haces Moleculares para Dispositivos Optoelectrónicos de Cavidad Resonante - Enrique Calleja Pardo (Director); Fernando Calle Gómez (Director) Doctorando: Fernández Ruano, Susana María (2004)

On the growth conditions of 3-5 mu m well-doped AlGaAs/AlAs/GaAs infrared detectors and its relation to the photovoltaic effect studied by transmission electron microscopy - Luna, E; Guzmán, A; Trampert, A; Sánchez-Rojas, JL; Calleja, E (Infrared Physics & Technology, 2003)

GaAsN/AlAs/AlGaAs double barrier quantum wells grown by molecular beam epitaxy as an alternative to infrared absorption below 4 mu m - Guzmán, A; Luna, E; Miguel-Sánchez, J; Calleja, E; Muñoz, E (Infrared Physics & Technology, 2003)

Modulation-doping in 3-5 mu m GaAs/AlAs/AlGaAs double barrier quantum well infrared photodetectors: an alternative to achieve high photovoltaic performance and high temperature detection - Luna, E; Guzmán, A; Sánchez-Rojas, JL; Calleja, E; Muñoz, E (Infrared Physics & Technology, 2003)

Annealing effects on the crystal structure of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy - Hierro, A; Ulloa, JM; Chauveau, JM; Trampert, A; Pinault, MA; Tournié, E; Guzmán, A; Sánchez-Rojas, JL; Calleja, E (Journal Of Applied Physics, 2003)

Improved AlGaN/GaN high electron mobility transistor using AlN interlayers - Jiménez, A.; Bougrioua, Z.; Tirado, J.M.; Braña, A.F.; Calleja, E.; Muñoz, E.; Moerman, I. (Applied Physics Letters, 2003)

Crecimiento, fabricación y caracterización de diodos electroluminiscentes basados en pozos cuánticos de InGaN - Enrique Calleja Pardo (Director) Doctorando: Fernando Bernabé Naranjo Vega (2003)

Characterization of GaN quantum discs embedded in AlxGa1-xN nanocolumns grown by molecular beam epitaxy - Ristic, J; Calleja, E; Sanchez-Garcia, MA; Ulloa, JM; Sanchez-Paramo, J; Calleja, JM; Jahn, U; Trampert, A; Ploog, KH (Physical Review b, 2003)

Correlation between the AlN buffer layer thickness and the GaN polarity in GaN/AlN/Si(111) grown by MBE - Sanchez, AM; Ruterana, P; Vennegues, P; Semond, F; Pacheco, FJ; Molina, SI; Garcia, R; Sanchez-Garcia, MA; Calleja, E (Materials Research Society Symposium - Proceedings, 2003)

Anomalous composition dependence of optical energies of MBE-grown InGaN - Fernandez-Torrente, I.; Amabile, D.; Martin, R.W.; O'Donnell, K.P.; Mosselmans, J.F.W.; Calleja, E.; Naranjo, F.B. (Materials Research Society Symposium - Proceedings, 2003)

Hydrogen-related local vibrational modes in GaN:Mg grown by molecular beam epitaxy - Pastor, D.; Cuscó, R.; Artús, L.; Naranjo, F.; Calleja, E. (Materials Research Society Symposium - Proceedings, 2003)

Fabricación, caracterización y aplicaciones de detectores de UV basados en AlGaN. - Muñoz Merino, Elías (Director); Calleja Pardo, Enrique (Director) Doctorando: PAU VIZCAINO, José Luis (2003)

Crecimiento y fabricación de transistores HEMT de AlGaN/GaN por epitaxia de haces moleculares - Enrique Calleja Pardo (Director) Doctorando: Ana Jimenez Martín (2003)

AlGaN nanocolumns and AlGaN/GaN/AlGaN nanostructures grown by molecular beam epitaxy - Ristic, J; Sánchez-García, MA; Ulloa, JM; Calleja, E; Sanchez-Páramo, J; Calleja, JM; Jahn, U; Trampert, A; Ploog, KH (Physica Status Solidi B-Basic Solid State Physics, 2002)

Transport properties of 2DEGs in AlGaN/GaN heterostructures: Spin splitting and occupation of higher subbands - Link, A.; Graf, T.; Ambacher, O.; Jimenez, A.; Calleja, E.; Smorchkova, Y.; Speck, J.; Mishra, U.; Stutzmann, M. (Physica Status Solidi B-Basic Solid State Physics, 2002)

AlGaN nanocolumns grown by molecular beam epitaxy: Optical and structural characterization - Ristic, J; Sánchez-García, MA; Calleja, E; Sanchez-Páramo, J; Calleja, JM; Jahn, U; Ploog, KH (Physica Status Solidi A-Applications And Materials Science, 2002)

Experimental characterisation of GaN-based resonant cavity light emitting diodes - Roycroft, B.; Akhter, M.; Maaskant, P.; De Mierry, P.; Fernández, S.; Naranjo, F.B.; Calleja, E.; McCormack, T.; Corbett, B. (Physica Status Solidi A-Applications And Materials Science, 2002)

Interplay between GaN and AlN sublattices in wurtzite AlxGa1-xN alloys revealed by Raman spectroscopy - Alvarez, AL; Calle, F; Monroy, E; Pau, JL; Sanchez-Garcia, MA; Calleja, E; Munoz, E; Omnes, F; Gibart, P; Hageman, PR; (Journal Of Applied Physics, 2002)

Physica Status Solidi (A) Applied Research: Preface - Calleja E; Muñoz E; Ploog K (Physica Status Solidi A-Applications And Materials Science, 2002)

AlN buffer layer thickness influence on inversion domains in GaN/AlN/Si(111) - Sánchez, AM; Pacheco, FJ; Molina, SI; Ruterana, P; Calle, F; Palacios, TA; Sánchez-García, MA; Calleja, E; García, R (Materials Science And Engineering B-Advanced Functional Solid-State Materials, 2002)

Correlation between transport, optical and structural properties in AlGaN/GaN heterostructures - Jiménez, A.; Calleja, E.; Muñoz, E.; Varela, M.; Ballesteros, C.; Jahn, U.; Ploog, K.; Omnés, F.; Gibart, P. (Materials Science And Engineering B-Advanced Functional Solid-State Materials, 2002)

Structural and optical characterization of thick InGaN layers and InGaN/GaN MQW grown by molecular beam epitaxy - Naranjo, F.B.; Fernández, S.; Sánchez-García, M.A.; Calle, F.; Calleja, E.; Trampert, A.; Ploog, K.H. (Materials Science And Engineering B-Advanced Functional Solid-State Materials, 2002)

Growth of GaN layers on SiC/Si(111) substrate by molecular beam epitaxy - Ristic, J; Sánchez-García, MA; Calleja, E; Pérez-Rodríguez, A; Serre, C; Romano-Rodríguez, A; Morante, JR; Koegler, VR; Skorupa, W (Materials Science And Engineering B-Advanced Functional Solid-State Materials, 2002)

Growth and characterization of high-quality 10-period AlGaN/GaN Bragg reflectors grown by molecular beam epitaxy - Fernández, S.; Naranjo, F.B.; Calle, F.; Calleja, E.; Trampert, A.; Ploog, K.H. (Materials Science And Engineering B-Advanced Functional Solid-State Materials, 2002)

Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR) - Glaser, ER; Carlos, WE; Braga, GCB; Freitas, JA; Moore, WJ; Shanabrook, BV; Wickenden, AE; Koleske, DD; Henry, RL; Bayerl, MW; Brandt, MS; Obloh, H; et al. (Materials Science And Engineering B-Advanced Functional Solid-State Materials, 2002)

AlGaN ultraviolet photodetectors grown by molecular beam epitaxy on Si(111) substrates - Pau, JL; Monroy, E; Sánchez-García, MA; Calleja, E; Muñoz, E (Materials Science And Engineering B-Advanced Functional Solid-State Materials, 2002)

Plasma-assisted MBE growth of group-III nitrides: from basics to device applications - Sánchez-García, M.A.; Pau, J.L.; Naranjo, F.; Jiménez, A.; Fernández, S.; Ristic, J.; Calle, F.; Calleja, E.; Muñoz, E. (Materials Science And Engineering B-Advanced Functional Solid-State Materials, 2002)

Resonant-cavity InGaN multiple-quantum-well green light-emitting diode grown by molecular-beam epitaxy - Naranjo, F.B.; Fernández, S.; Sánchez-García, M.A.; Calle, F.; Calleja, E. (Applied Physics Letters, 2002)

Structural and optical characterization of intrinsic GaN nanocolumns - Sánchez-Páramo, J; Calleja, JM; Sánchez-García, MA; Calleja, E; Jahn, U (Physica E-Low-Dimensional Systems & Nanostructures, 2002)

Strong localization in InGaN layers with high In content grown by molecular-beam epitaxy - Naranjo, F.B.; Sánchez-García, M.A.; Calle, F.; Calleja, E.; Jenichen, B.; Ploog, K.H. (Applied Physics Letters, 2002)

Visible and solar-blind AlGaN metal-semiconductor-metal photodetectors grown on Si(111) substrates - Pau, JL; Muñoz, E; Sánchez-García, MA; Calleja, E (Physica Status Solidi A-Applications And Materials Science, 2002)

Structural study of GaN layers grown on carbonized Si(111) substrates - Morales, FM; Ponce, A; Molina, SI; Araújo, D; García, R; Ristic, J; Sánchez-García, MA; Calleja, E; Cimalla, V; Pezoldt, J (Materials Science Forum, 2002)

Effect of p-doped overlayer thickness on RF-dispersion in GaN junction FETs - Jiménez, A.; Buttari, D.; Jena, D.; Coffíe, R.; Heikman, S.; Zhang, N.Q.; Shen, L.; Calleja, E.; Muñoz, E.; Speck, J.; Mishra, U.K. (Ieee Electron Device Letters, 2002)

Luminescence and morphological properties of GaN layers grown on SiC/Si(111) substrates - Sanchez-Garcia, MA; Ristic, J; Calleja, E; Perez-Rodriguez, A; Serre, C; Romano-Rodriguez, A; Morante, JR; Koegler, R; Skorupa, W; Trampert, A; Ploog, KH (Physica Status Solidi A-Applications And Materials Science, 2002)

From ultraviolet to green InGaN-Based conventional and resonant-cavity light-emitting diodes grown by molecular beam epitaxy - Naranjo, F.B.; Fernández, S.; Calle, F.; Sánchez-García, M.A.; Calleja, E. (Physica Status Solidi A-Applications And Materials Science, 2002)

High-quality distributed Bragg reflectors for resonant-cavity light-emitting diode applications - Fernández, S.; Naranjo, F.B.; Calle, F.; Sánchez-García, M.A.; Calleja, E.; Vennéguès, P. (Physica Status Solidi A-Applications And Materials Science, 2002)

Nitride RCLEDs grown by MBE for POF applications - Calle, F.; Naranjo, F.B.; Fernández, S.; Sánchez-García, M.A.; Calleja, E.; Muñoz, E. (Physica Status Solidi A-Applications And Materials Science, 2002)

Solar-blind AlGaN-based UV photodetectors grown on Si (111) substrates - Pau J; Muñoz E; Sánchez M; Calleja E (Proceedings Of Spie - The International Society For Optical Engineering, 2002)

MBE-grown high-quality (Al, Ga)N/GaN distributed Bragg reflectors for resonant cavity LEDs - Fernández, S.; Naranjo, F.B.; Calle, F.; Sánchez-García, M.A.; Calleja, E.; Vennegues, P.; Trampert, A.; Ploog, K.H. (Semiconductor Science And Technology, 2001)

High-quality distributed Bragg reflectors based on AlxGa1-xN/GaN multilayers grown by molecular-beam epitaxy - Fernández, S.; Naranjo, F.B.; Calle, F.; Sánchez-García, M.A.; Calleja, E.; Vennegues, P.; Trampert, A.; Ploog, K.H. (Applied Physics Letters, 2001)

Optical investigation of strain in Si-doped GaN films - Sánchez-Páramo, J; Calleja, JM; Sánchez-García, MA; Calleja, E (Applied Physics Letters, 2001)

Molecular beam epitaxy growth and doping of III-nitrides on Si(111): layer morphology and doping - Calleja, E.; Sánchez-García, M.A.; Calle, F.; Naranjo, F.B.; Muñoz, E.; Jahn, U.; Ploog, K.; Sánchez, J.; Calleja, J.M.; Saarinen, K.; Hautojärvi, P. (Materials Science And Engineering B-Advanced Functional Solid-State Materials, 2001)

Inversion domains in GaN layers grown on (111) silicon by molecular-beam epitaxy - Sánchez, AM; Pacheco, FJ; Molina, SI; Garcia, R; Ruterana, P; Sánchez-García, MA; Calleja, E (Applied Physics Letters, 2001)

Fast AlGaN metal-semiconductor-metal photodetectors grown on Si(111) - Pau, JL; Monroy, E; Muñoz, E; Calle, F; Sánchez-Garcia, MA; Calleja, E (Electronics Letters, 2001)

Voltage-tunable two-colour quantum well infrared detector with Al-graded triangular confinement barriers - Guzmán, A; Sánchez-Rojas, JL; Tijero, JMG; Hernando, J; Calleja, E; Muñoz, E; Vergara, G; Almazán, R; Sánchez, FJ; Verdú, M; Montojo, MT (Semiconductor Science And Technology, 2001)

AlGaN photodetectors grown on Si(111) by molecular beam epitaxy - Pau, J.L.; Monroy, E.; Muñoz, E.; Naranjo, F.B.; Calle, F.; Sánchez-García, M.A.; Calleja, E. (Journal Of Crystal Growth, 2001)

Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy - Calleja, E.; Sánchez-García, M.A.; Sánchez, F.J.; Calle, F.; Naranjo, F.B.; Muñoz, E.; Jahn, U.; Ploog, K. (Physical Review b, 2000)

Wet etching of GaN grown by molecular beam epitaxy on Si(111) - Palacios, T.; Calle, F.; Varela, M.; Ballesteros, C.; Monroy, E.; Naranjo, F.B.; Sánchez-García, M.A.; Calleja, E.; Muñoz, E. (Semiconductor Science And Technology, 2000)

(Al,Ga)N ultraviolet photodetectors and applications - Muñoz E; Monroy E; Pau J; Calle F; Calleja E; Omnes F; Gibart P (Physica Status Solidi A-Applications And Materials Science, 2000)

High visible rejection AlGaN photodetectors on Si(111) substrates - Pau, J.L.; Monroy, E.; Naranjo, F.B.; Muñoz, E.; Calle, F.; Sánchez-García, M.A.; Calleja, E. (Applied Physics Letters, 2000)

Ultraviolet electroluminescence in GaN/AlGaN single-heterojunction light-emitting diodes grown on Si(111) - Sánchez-García, M.A.; Naranjo, F.B.; Pau, J.L.; Jiménez, A.; Calleja, E.; Muñoz, E. (Journal Of Applied Physics, 2000)

Study of the effects of Mg and Be co-doping in GaN layers - Naranjo, FB; Sánchez-García, MA; Pau, JL; Jiménez, A; Calleja, E; Muñoz, E; Oila, J; Saarinen, K; Hautojärvi, P (Physica Status Solidi A-Applications And Materials Science, 2000)

Si doping effect on the defect structure in GaN/AlN/Si(111) heteroepitaxial systems - Sánchez, AM; Molina, SI; Pacheco, FJ; García, R; Sánchez-García, MA; Sánchez, FJ; Calleja, E (Boletin De La Sociedad Espanola De Ceramica Y Vidrio, 2000)

Optically detected magnetic resonance study of defects in undoped, Be-doped, and Mg-doped GaN - Koschnick, FK; Michael, K; Spaeth, JM; Beaumont, B; Gibart, P; Calleja, E; Munoz, E; (Journal Of Electronic Materials, 2000)

Crecimiento y caracterización de nitruros del grupo III sobre Si (111) por epitaxia de haces moleculares. - Calleja Pardo, Enrique (Director) Doctorando: SANCHEZ GARCIA, Miguel Angel (2000)

Optical characterisation of quantum well infra-red detector structures - A Guzmán; JL Sánchez-Rojas; JMG Tijero; JJ Sánchez; J Hernando; E Calleja; E Muñoz; G Vergara; MT Montojo; LJ Gómez; P Rodriíguez; R Almazán; et al. (Iee Proceedings-Optoelectronics, 1999)

AlGaN-based UV detectors and applications - Calle Gómez, Fernando (Conference Proceedings - Lasers And Electro-Optics Society Annual Meeting-Leos, 1999)

The effect of Si doping on the defect structure of GaN/AlN/Si(111) - Molina, SI; Sánchez, AM; Pacheco, FJ; García, R; Sánchez-García, MA; Sánchez, FJ; Calleja, E (Applied Physics Letters, 1999)

Properties of homoepitaxial and heteroepitaxial GaN layers grown by plasma-assisted MBE - Sánchez-García, MA; Naranjo, FB; Pau, JL; Jiménez, A; Calleja, E; Muñoz, E; Molina, SI; Sánchez, AM; Pacheco, FJ; García, R (Physica Status Solidi A-Applications And Materials Science, 1999)

Structural characterisation of AlGaN/AlN/Si(111) heterostructures by transmission electron microscopy - Sánchez, AM; Molina, SI; Pacheco, FJ; García, R; Sánchez-García, MA; Calleja, E (Institute Of Physics Conference Series, 1999)

Piezoelectric InGaAs/GaAs (111)B multiple quantum well photodiodes: optoelectronic properties by electron beam induced current and cathodoluminescence - Romero, MJ; Araujo, D; Sanchez-Rojas, JL; Calleja, E; Munoz, E; Garcia, R; (Microelectronics Journal, 1999)

Growth of III-nitrides on Si(111) by molecular beam epitaxy Doping, optical, and electrical properties - Calleja, E.; Sánchez-García, M.A.; Sánchez, F.J.; Calle, F.; Naranjo, F.B.; Muñoz, E.; Molina, S.I.; Sánchez, A.M.; Pacheco, F.J.; García, R. (Journal Of Crystal Growth, 1999)

MBE growth of GaN and AlGaN layers on Si(111) substrates: doping effects - Sánchez-García, M.A.; Calleja, E.; Naranjo, F.B.; Sánchez, F.J.; Calle, F.; Muñoz, E.; Sánchez, A.M.; Pacheco, F.J.; Molina, S.I. (Journal Of Crystal Growth, 1999)

Influence of Si doping on the subgrain structure of GaN grown on AlN/Si(111) - Molina, SI; Sanchez, AM; Pacheco, FJ; Garcia, R; Sanchez-Garcia, MA; Calleja, E (Physica Status Solidi A-Applications And Materials Science, 1999)

Growth and characterization of a bound-to-quasi-continuum QWIP with Al-graded triangular confinement barriers - Guzmán, A; Sánchez-Rojas, JL; Tijero, JMG; Hernando, J; Calleja, E; Muñoz, E; Vergara, G; Almazán, R; Gómez, LJ; Verdú, M; Montojo, MT (Ieee Photonics Technology Letters, 1999)

Structural characterization of undoped and Si doped GaN on Si (111) - Molina, SI; Sánchez, AM; Pacheco, FJ; García, R; Sánchez-García, MA; Calleja, E (Lattice Mismatched Thin Films, 1999)

AlGaN-based photodetectors for solar UV applications - Calle Gómez, Fernando (Proceedings Of Spie - The International Society For Optical Engineering, 1999)

Contribución al estudio de defectos en capas epitaxiales de Gan. Aplicaciones a dispositivos optoelectronicos - Calleja Pardo, Enrique (Director) Doctorando: SANCHEZ SANZ, Fernando José (1999)

Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si(111) - Sanchez, FJ; Calle, F; Sanchez-Garcia, MA; Calleja, E; Munoz, E; Molloy, CH; Somerford, DJ; Koschnick, FK; Michael, K; Spaeth, JM (M R S Internet Journal Of Nitride Semiconductor Research: (Materials Research Society), 1998)

High-performance GaN p-n junction photodetectors for solar ultraviolet applications - Monroy, E; Munoz, E; Sanchez, FJ; Calle, F; Calleja, E; Beaumont, B; Gibart, P; Munoz, JA; Cusso, F; (Semiconductor Science And Technology, 1998)

GaN-based solar-ultraviolet detection instrument - Monroy, E; Calle, F; Angulo, C; Vila, P; Sanz, A; Garrido, JA; Calleja, E; Munoz, E; Haffouz, S; Beaumont, B; Omnes, F; Gibart, P (Applied Optics, 1998)

Relaxation mechanism of InGaAs single and graded layers grown on (111)B GaAs - Rojas, TC; Molina, SI; Sacedon, A; Valtuena, F; Calleja, E; Garcia, R; (Thin Solid Films, 1998)

The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(111) - Sanchez-Garcia, MA; Calleja, E; Monroy, E; Sanchez, FJ; Calle, F; Munoz, E; Beresford, R (Journal Of Crystal Growth, 1998)

Blue-UV homojunction GaN LEDs fabricated by MOVPE - Calle Gómez, Fernando (Materials Science Forum, 1998)

Influence of interface dislocations on surface kinetics during epitaxial growth of InGaAs - Alvarez, AL; Calle, F; Valtuena, JF; Faura, J; Sanchez, MA; Calleja, E; Munoz, E; Morante, JR; Gonzalez, D; Araujo, D; Roja, RG; (Applied Surface Science, 1998)

Growth optimization and doping with Si and Be of high quality GaN on Si(111) by molecular beam epitaxy - Sanchez-Garcia, MA; Calleja, E; Sanchez, FJ; Calle, F; Monroy, E; Basak, D; Munoz, E; Villar, C; Sanz-Hervas, A; Aguilar, M; Serrano, JJ; Blanco, JM (Journal Of Electronic Materials, 1998)

Effect of Ga/Si interdiffusion on optical and transport properties of GaN layers grown on Si(111) by molecular-beam epitaxy - Calleja, E; Sanchez-Garcia, MA; Basak, D; Sanchez, FJ; Calle, F; Youinou, P; Munoz, E; Serrano, JJ; Blanco, JM; Villar, C; Laine, T; Oila, J; et al. (Physical Review b, 1998)

Experimental evidence for a Be shallow acceptor in GaN grown on Si(111) by molecular beam epitaxy - Sanchez, FJ; Calle, F; Sanchez-Garcia, MA; Calleja, E; Munoz, E; Molloy, CH; Somerford, DJ; Serrano, JJ; Blanco, JM (Semiconductor Science And Technology, 1998)

Characterisation by TEM and X-ray diffraction of linearly graded composition InGaAs buffer layers on (001) GaAs - Pacheco, FJ; Araujo, D; Molina, SI; Garcia, R; Sacedon, A; Gonzalez-Sanz, F; Calleja, E; Kidd, P; Lourenco, MA; (Materials Science And Technology, 1998)

Structural characterization of GaN/AlN/Si (111) - Molina, SI; Sanchez, AM; Sanchez-Garcia, MA; Calleja, E; Calle, F; Garcia, R (Electron Microscopy 1998, Vol 3, 1998)

Crystal morphology and optical emissions of GaN layers grown on Si(111) substrates by molecular beam epitaxy - Sánchez-García, M.A.; Sánchez, F.J.; Naranjo, F.B.; Calle, F.; Calleja, E.; Muñoz, E.; Jahn, U.; Ploog, K.H. (M R S Internet Journal Of Nitride Semiconductor Research: (Materials Research Society), 1998)

Violet GaN based light emitting diodes fabricated by metal organics vapour phase epitaxy - Beaumont B; Haffouz S; Gibart P; Leroux M; Lorenzini P; Calleja E; Muñoz E (Materials Science And Engineering B-Advanced Functional Solid-State Materials, 1997)

Growth kinetics and morphology of high quality AlN grown on Si(111) by plasma-assisted molecular beam epitaxy - Calleja, E; SanchezGarcia, MA; Monroy, E; Sanchez, FJ; Munoz, E; SanzHervas, A; Villar, C; Aguilar, M (Journal Of Applied Physics, 1997)

Exciton and donor-acceptor recombination in undoped GaN on Si(111) - Calle, F; Sanchez, FJ; Tijero, JMG; SanchezGarcia, MA; Calleja, E; Beresford, R (Semiconductor Science And Technology, 1997)

Observation of non-trigonal lattice distortion in pseudomorphic InGaAs/GaAs superlattices grown on misoriented (111)B GaAs - Sanzhervas, A; Aguilar, M; Sanchezrojas, JL; Sacedon, A; Calleja, E; Munoz, E; Villar, C; Abril, EJ; Lopez, M (Journal Of Applied Physics, 1997)

Photoconductor gain mechanisms in GaN ultraviolet detectors - Munoz, E; Monroy, E; Garrido, JA; Izpura, I; Sanchez, FJ; SanchezGarcia, MA; Calleja, E; Beaumont, B; Gibart, P (Applied Physics Letters, 1997)

Characterization and modeling of photoconductive GaN ultraviolet detectors - Monroy, E; Garrido, JA; Munoz, E; Izpura, I; Sanchez, FJ; SanchezGarcia, MA; Calleja, E; Beaumont, B; Gibart, P (M R S Internet Journal Of Nitride Semiconductor Research: (Materials Research Society), 1997)

Yellow luminescence in Mg-doped GaN - Sanchez, FJ; Calle, F; Basak, D; Tijero, JMG; SanchezGarcia, MA; Monroy, E; Calleja, E; Munoz, E; Beaumont, B; Gibart, P; Serano, JJ; Blanco, JM (M R S Internet Journal Of Nitride Semiconductor Research: (Materials Research Society), 1997)

Structural study of AlGaAs/InGaAs superlattices grown by MBE on (III)B GaAs substrates - Rojas, TC; Molina, SI; Romero, MJ; Sacedon, A; Calleja, E; Garcia, R; (Materials Science And Engineering B-Advanced Functional Solid-State Materials, 1997)

Yellow luminescence and related deep states in undoped GaN - Calleja, E; Sanchez, FJ; Basak, D; SanchezGarcia, MA; Munoz, E; Izpura, I; Calle, F; Tijero, JMG; SanchezRojas, JL; Beaumont, B; Lorenzini, P; Gibart, P (Physical Review b, 1997)

Charge accumulation effects in InGaAs/GaAs [111]-oriented piezoelectric multiple quantum wells - Sanchez-Rojas, JL; Sacedon, A; Valtuena, JF; Sanz-Hervas, A; Izpura, I; Calleja, E; Munoz, E; Abril, EJ; Aguilar, M; (Microelectronics Journal, 1997)

Influence of the surface morphology on the relaxation of low-strained InxGa1-xAs linear buffer structures - Valtuena, JF; Sacedon, A; Alvarez, AL; Izpura, I; Calle, F; Calleja, E; MacPherson, G; Goodhew, PJ; Pacheco, FJ; Garcia, R; Molina, SI; (Journal Of Crystal Growth, 1997)

Reactive ion etching of GaN layers using SF6 - Basak, D; Verdu, M; Montojo, MT; SanchezGarcia, MA; Sanchez, FJ; Munoz, E; Calleja, E (Semiconductor Science And Technology, 1997)

Application of high-resolution X-ray diffractometry to the structural study of epitaxial multilayers on novel index surfaces - Sanz-Hervés A; Garrido M; Aguilar M; Sacedón A; Sanchez-Rojas J; Calleja E; Muñoz E; Villar C; Abril E; López M (Microelectronics Journal, 1997)

High-resolution X-ray diffraction characterisation of piezoelectric InGaAs/GaAs multiquantum wells and superlattices on (lll)B GaAs - Sanz-Hervâs A; Löpez M; Sacedon A; Sânchez-Rojas J; Aguilar M; Llorente C; Lorenzo R; Abril E; Calleja E; Munoz E (Nuovo Cimento Della Societa Italiana Di Fisica D-Condensed Matter Atomic Mo, 1997)

XPS study of Au/GaN and Pt/GaN contacts - Sporken R; Silien C; Malengreau F; Grigorov K; Caudano R; Sánchez F; Calleja E; Muñoz E; Beaumont B; Gibart P (M R S Internet Journal Of Nitride Semiconductor Research: (Materials Research Society), 1997)

Study of high quality AlN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy - SanchezGarcia, MA; Calleja, E; Monroy, E; Sanchez, FJ; Calle, F; Munoz, E; Hervas, AS; Villar, C; Aguilar, M (M R S Internet Journal Of Nitride Semiconductor Research: (Materials Research Society), 1997)

Design and characterization of two color GaAs based quantum well infrared detector structures - Sanchez-Rojas J; Guzman A; Munoz E; Sanchez J; Calleja E; Sanz-Hervas A; Villar C; Aguilar M; Montojo M; Vergara G; Gomez L (Advanced Workshop On Frontiers In Electronics, Proceedings, Wofe, 1997)

High-resolution x-ray diffraction study of piezoelectric InGaAs/GaAs multiquantum well p-i-n photodiodes grown on (111)B GaAs - Sanzhervas, A; Aguilar, M; Sanchezrojas, JL; Sacedon, A; Calleja, E; Munoz, E; Abril, EJ; Lopez, M (Applied Physics Letters, 1996)

Photoinhibition of the quantum confined Stark effect in piezoelectric multiple quantum wells - Sanchezrojas, JL; Sacedon, A; Calleja, E; Munoz, E; Sanzhervas, A; Debenito, G; Lopez, M (Physical Review b, 1996)

Non-uniform strain relaxation in InxGa1-xAs layers - Alvarez, AL; Calle, F; Sacedon, A; Calleja, E; Munoz, E; Garcia, R; Gonzalez, L; Gonzalez, Y; Colson, HG; Kidd, P; Beanland, R; Goodhew, P (Solid-State Electronics, 1996)

Transient negative photocurrent and out-of-well dipole kinetics in novel piezoelectric InGaAs/GaAs MQW pin diodes - Izpura, I; Valtuena, JF; SanchezRojas, JL; Sacedon, A; Calleja, E; Munoz, E; (Solid-State Electronics, 1996)

Optical and electrical characterization of GaN layers grown on silicon and sapphire substrates - SanchezGarcia, MA; Sanchez, FJ; Calle, F; Munoz, E; Calleja, E; Stevens, KS; Kinniburgh, M; Beresford, R; Beaumont, B; Gibart, P (Solid-State Electronics, 1996)

Per-carrier nonlinear optical response of [111]-oriented piezoelectric InGaAs/GaAs multiple quantum wells - Huang, XR; Cartwright, AN; Harken, DR; McCallum, DS; Smirl, AL; SanchezRojas, JL; Sacedon, A; Calleja, E; Munoz, E; (Journal Of Applied Physics, 1996)

Predictability of plastic relaxation in metamorphic epitaxy - Dunstan D; Kidd P; Beanland R; Sacedón A; Calleja E; González L; González Y; Pacheco F (Materials Science And Technology, 1996)

Probing resonant tunneling and charge accumulation via capacitance measurements in [111]-oriented InGaAs/GaAs MQW and superlattices - Sánchez-Rojas J; Sacedón A; Sanz-Hervás A; Calleja E; Muñoz E; Abril E (Solid-State Electronics, 1996)

Yellow band and deep levels in undoped MOVPE GaN. - Sanchez, FJ; Basak, D; SanchezGarcia, MA; Calleja, E; Munoz, E; Izpura, I; Calle, F; Tijero, JMG; Beaumont, B; Lorenzini, P; Gibart, P; Cheng, TS; et al. (M R S Internet Journal Of Nitride Semiconductor Research: (Materials Research Society), 1996)

Behavior of silicon-, sulfur-, and tellurium-related DX centers in liquid-phase-epitaxy and vapor-phase-epitax alloys - Calleja E; Sanchez F; Muñoz E; Vigil E; Omnès F; Gibart P (Physical Review b, 1996)

Aportación al estudio de estructuras pseudomórficas y metamórficas de InGaAs - Calleja Pardo, Enrique (Director) Doctorando: SACEDON AYUSO, Ana (1996)

DESIGN AND CHARACTERIZATION OF (111)B INGAAS/GAAS PIEZOELECTRIC SUPERLATTICES - Sanchezrojas, JL; Sacedon, A; Sanzhervas, A; Calleja, E; Munoz, E; Abril, EJ; Aguilar, M; Lopez, M (Semiconductor Science And Technology, 1995)

ON THE SPECTROSCOPY OF DX CENTERS BY TRANSIENT TECHNIQUES AT CONSTANT CAPACITANCE - IZPURA, I; MONDARAY, A; MUNOZ, E; CALLEJA, E; (Semiconductor Science And Technology, 1995)

DISPLACEMENT PHOTOCURRENTS AND SCREENING EFFECTS IN NOVEL PIEZOELECTRIC INGAAS/GAAS MULTIPLE-QUANTUM-WELL P-I-N-DIODES - VALTUENA, JF; IZPURA, I; SANCHEZROJAS, JL; SACEDON, A; CALLEJA, E; MUNOZ, E; (Semiconductor Science And Technology, 1995)

Field control in piezoelectric [111]- oriented InGaAs/GaAs MQW and superlattice devices - Sanchez-Rojas J; Munoz E; Sacedon A; Valtuena J; Izpura I; Calleja E (1995)

Strain relaxation in step and linearly-graded InGaAs buffer layers on (001)GaAs - Pacheco, FJ; Gonzalez, D; Molina, SI; Villar, MP; Sacedon, A; Calleja, E; Garcia, R; (Institute Of Physics Conference Series, 1995)

TEM observations of relaxation in InxGa1-xAs on (111)B GaAs - Beanland, R; Sacedon, A; Calleja, E; (Institute Of Physics Conference Series, 1995)

CARRIER AND SCREENING DYNAMICS IN STRAINED [111]-ORIENTED MULTIPLE-QUANTUM WELLS - HARKEN, DR; HUANG, XR; MCCALLUM, DS; SMIRL, AL; SANCHEZROJAS, JL; SACEDON, A; CALLEJA, E; MUNOZ, E; (Applied Physics Letters, 1995)

SEQUENTIAL TUNNELING IN [100]-ORIENTED AND [111]-ORIENTED INGAAS/GAAS MULTIQUANTUM WELLS BY PHOTOCAPACITANCE - SANCHEZROJAS, JL; SACEDON, A; CALLEJA, E; MUNOZ, E; (Applied Physics Letters, 1995)

DEEP-LEVEL TRANSIENT SPECTROSCOPY ASSESSMENT OF SILICON CONTAMINATION IN ALGAAS LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY - CALLEJA, E; SANCHEZ, F; MUNOZ, E; GIBART, P; POWELL, A; ROBERTS, JS; (Journal Of Electronic Materials, 1995)

IN-WELL SCREENING NONLINEARITIES IN PIEZOELECTRIC MULTIPLE-QUANTUM WELLS - HUANG, XR; HARKEN, DR; CARTWRIGHT, AN; SMIRL, AL; SANCHEZROJAS, JL; SACEDON, A; CALLEJA, E; MUNOZ, E; (Applied Physics Letters, 1995)

A RAMAN-SPECTROSCOPIC STUDY OF THE SI, BE, AND C INCORPORATION IN INXGA1-XAS RELAXED LAYERS - ALVAREZ, AL; CALLE, F; SACEDON, A; CALLEJA, E; MUNOZ, E; WAGNER, J; MAIER, M; MAZUELAS, A; PLOOG, KH; (Journal Of Applied Physics, 1995)

Strain diagnosis of (001) and (111) InGaAs layers by optical techniques - Calle, F; Alvarez, AL; Sacedon, A; Calleja, E; Munoz, E; (Physica Status Solidi A-Applications And Materials Science, 1995)

Optical characterization of [111]B InGaAs layers - Calle, F; Sacedon, A; Alvarez, AL; Calleja, E; Muno, E; Colson, HG; Kidd, P; (Microelectronics Journal, 1995)

DISLOCATION BEHAVIOR IN INGAAS STEP-GRADED AND ALTERNATING STEP-GRADED STRUCTURES - DESIGN RULES FOR BUFFER FABRICATION - ARAUJO, D; GONZALEZ, D; GARCIA, R; SACEDON, A; CALLEJA, E; (Applied Physics Letters, 1995)

Design of InGaAs linear graded buffer structures - Sacedón A; González-Sanz F; Calleja E; Muñoz E; Molina S; Pacheco F; Araújo D; García R; Lourenço M; Yang Z; Kidd P; Dunstan D (Applied Physics Letters, 1995)

Incorporation of Be into In x Ga 1-x As (0.004?x?0.17) studied by photoluminescence and resonant Raman spectroscopy of local vibrational modes - Alvarez A; Wagner J; Calle F; Maier M; Gutierrez G; Sacedon A; Calleja E; Munoz E (Materials Science Forum, 1994)

Photoexcited and metastable states of DX centers in Si doped AlxGa1-xAs - Jia Y; Grimmeiss H; Calleja E (Materials Science Forum, 1994)

DX centers in reduced dimensionality n-type AlGaAs structures - Izpura I; Munoz E; Calleja E; Garcia F (Materials Science Forum, 1994)

Time-resolved piezoelectric nonlinearities and exciton dynamics in strained [111] p-i-n multiple quantum well structures - Harken D; Huang X; McCallum D; Smirl A; Sanchez-Rojas J; Sacedon A; Munoz E; Calleja E (1994)

Piezoelectric optical nonlinearities in strained [111] InGaAs-GaAs multiple quantum well p-i-n structures - Smirl A; Huang X; Harken D; Cartwright A; McCallum D; Sanchez-Rojas J; Sacedon A; Gonzalez-Sanz F; Calleja E; Munoz E (1994)

STRAINED PIEZOELECTRIC [111]-MULTIPLE QUANTUM-WELLS - CLAMPED OR FREE - HUANG, XR; MCCALLUM, DS; HARKEN, DR; CARTWRIGHT, AN; SMIRL, AL; SACEDON, A; SANCHEZROJAS, JL; CALLEJA, E; MUNOZ, E; (Superlattices And Microstructures, 1994)

INFLUENCE OF DELTA-DOPING PROFILE AND INTERFACE ROUGHNESS ON THE TRANSPORT-PROPERTIES OF PSEUDOMORPHIC HETEROSTRUCTURES - DEAVILA, SF; SANCHEZROJAS, JL; GONZALEZSANZ, F; CALLEJA, E; MUNOZ, E; HIESINGER, P; KOHLER, K; JANTZ, W; (Applied Physics Letters, 1994)

DEPENDENCE ON THE IN CONCENTRATION OF THE PIEZOELECTRIC FIELD IN (111)B INGAAS/GAAS STRAINED HETEROSTRUCTURES - SANCHEZROJAS, JL; SACEDON, A; GONZALEZSANZ, F; CALLEJA, E; MUNOZ, E; (Applied Physics Letters, 1994)

CONDUCTION-BAND ENGINEERING IN PIEZOELECTRIC[111] MULTIPLE-QUANTUM-WELL P-I-N PHOTODIODES - SANCHEZROJAS, JL; SACEDON, A; CALLE, F; CALLEJA, E; MUNOZ, E; (Applied Physics Letters, 1994)

STRAIN RELIEF IN LINEARLY GRADED COMPOSITION BUFFER LAYERS - A DESIGN SCHEME TO GROW DISLOCATION-FREE (LESS-THAN-10(5) CM(-2)) AND UNSTRAINED EPILAYERS - MOLINA, SI; PACHECO, FJ; ARAUJO, D; GARCIA, R; SACEDON, A; CALLEJA, E; YANG, Z; KIDD, P; (Applied Physics Letters, 1994)

STEP-GRADED BUFFER LAYER STUDY OF THE STRAIN RELAXATION BY TRANSMISSION ELECTRON-MICROSCOPY - GONZALEZ, D; ARAUJO, D; MOLINA, SI; SACEDON, A; CALLEJA, E; GARCIA, R; (Materials Science And Engineering B-Advanced Functional Solid-State Materials, 1994)

TRANSMISSION ELECTRON-MICROSCOPY STUDY OF INXGA1-XAS/GAAS MULTILAYER BUFFER STRUCTURES USED AS DISLOCATION FILTERS - GONZALEZ, D; ARAUJO, D; SACEDON, A; CALLEJA, E; MOLINA, SI; ARAGON, G; GARCIA, R; (Materials Science And Engineering B-Advanced Functional Solid-State Materials, 1994)

NONLINEAR-OPTICAL RESPONSE, SCREENING, AND DISTRIBUTION OF STRAIN IN PIEZOELECTRIC MULTIPLE-QUANTUM WELLS - HUANG, XR; HARKEN, DR; CARTWRIGHT, AN; MCCALLUM, DS; SMIRL, AL; SANCHEZROJAS, JL; SACEDON, A; GONZALEZSANZ, F; CALLEJA, E; MUNOZ, E; (Journal Of Applied Physics, 1994)

INFLUENCE OF IN ON SI LOCAL VIBRATIONAL-MODES IN INXGA1-XAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.12) - ALVAREZ, AL; CALLE, F; WAGNER, J; SACEDON, A; MAIER, M; DEAVILA, SF; LOURENCO, MA; CALLEJA, E; MUNOZ, E; (Journal Of Applied Physics, 1994)

RELAXATION OF INGAAS LAYERS GROWN ON (111)B GAAS - SACEDON, A; CALLE, F; ALVAREZ, AL; CALLEJA, E; MUNOZ, E; BEANLAND, R; GOODHEW, P; (Applied Physics Letters, 1994)

INCORPORATION OF BE INTO INXGA1-XAS (0.004-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.17) STUDIED BY PHOTOLUMINESCENCE AND RESONANT RAMAN-SPECTROSCOPY OF LOCAL VIBRATIONAL-MODES - ALVAREZ, AL; WAGNER, J; CALLE, F; MAIER, M; GUTIERREZ, G; SACEDON, A; CALLEJA, E; MUNOZ, E; (Materials Science Forum, 1994)

Dislocation distribution in graded composition InGaAs layers - Molina S; Gutierrez G; Sacedon A; Calleja E; Garcia R (Materials Research Society Symposium - Proceedings, 1994)

Room- and low-temperature assessment of pseudomorphic AlGaAs/InGaAs/GaAs high-electron-mobility transistor structures by photoluminescence spectroscopy - Gilpérez J; Sánchez-Rojas J; Muñoz E; Calleja E; David J; Reddy M; Hill G; Sánchez-Dehesa J (Journal Of Applied Physics, 1994)

DEEP TRAP CHARACTERIZATION IN SI-DOPED IN0.52AL0.48AS/INP UNDER HYDROSTATIC-PRESSURE - A SEARCH FOR DX CENTERS - CALLEJA, E; ROMERO, AL; DEAVILA, SF; MUNOZ, E; CASTAGNE, J; (Semiconductor Science And Technology, 1993)

A CRITICAL ANALYSIS OF CAPACITANCE TRANSIENT SIGNALS DUE TO DX CENTERS IN N-TYPE ALGAAS - IZPURA, I; MUNOZ, E; CALLEJA, E; (Semiconductor Science And Technology, 1993)

Influence of DX centers on HEMT performance - Munoz E; Calleja E; Garcia F; Izpura I; Rojas J (Alta Frequenza Rivista Di Elettronica, 1993)

TECHNIQUES TO MINIMIZE DX CENTER DELETERIOUS EFFECTS IN III-V DEVICE PERFORMANCE - MUNOZ, E; CALLEJA, E; IZPURA, I; GARCIA, F; ROMERO, AL; SANCHEZROJAS, JL; POWELL, AL; CASTAGNE, J; (Journal Of Applied Physics, 1993)

PIEZOELECTRIC-INDUCED CURRENT ASYMMETRY IN [111] INGAAS/INALAS RESONANT-TUNNELING DIODES FOR MICROWAVE MIXING - HERNANDEZ, JM; IZPURA, I; CALLEJA, E; MUNOZ, E; (Applied Physics Letters, 1993)

PHOTOLUMINESCENCE AND RAMAN ANALYSIS OF STRAIN AND COMPOSITION IN INGAAS/ALGAAS PSEUDOMORPHIC HETEROSTRUCTURES - Calleja Pardo, Jose Manuel; Gilperez, JM; Gonzalezsanz, F; Calleja, E; Munoz, E; Calleja, JM; Mestres, N; Castagne, J; Barbier, E (Semiconductor Science And Technology, 1992)

DX CENTER CHARACTERIZATION IN SE-DOPED ALGAAS UNDER HYDROSTATIC-PRESSURE - CALLEJA, E; GARCIA, F; ROMERO, AL; MUNOZ, E; POWELL, AL; ROCKETT, PI; BUTTON, CC; ROBERTS, JS; (Semiconductor Science And Technology, 1992)

DX CENTER ELECTRON OCCUPANCY UNDER HYDROSTATIC-PRESSURE IN SI-DOPED INY(GA1-XALX)1-YAS ALLOYS - ROMERO, AL; CALLEJA, E; GARCIA, F; MUNOZ, E; POWELL, AL; ROCKETT, PI; GREY, R; CLAXTON, PA; (Applied Physics Letters, 1992)

Photoluminescence characterization of gated pseudomorphic AlGaAs/InGaAs/GaAs modulation-doped field-effect transistors - Gilpérez J; Sánchez-Rojas J; Muñoz E; Calleja E; David J; Hill G; Castagné J (Applied Physics Letters, 1992)

IMPACT IONIZATION OF SE-RELATED DX CENTERS IN ALGAAS - IZPURA, I; MUNOZ, E; GARCIA, F; CALLEJA, E; POWELL, AL; ROCKETT, PI; BUTTON, CC; ROBERTS, JS; (Applied Physics Letters, 1991)

ORIGIN OF THE NEAR-INFRARED LUMINESCENCE IN N-TYPE ALXGA1-XAS ALLOYS - CALLEJA, E; FONTAINE, C; MUNOZ, E; MUNOZYAGUE, A; FOCKELE, M; SPAETH, JM; (Semiconductor Science And Technology, 1991)

Resonance Raman scattering of InxAl1-xAs lattice matched to InP - Viña Liste, Luis M; Calleja Pardo, Jose Manuel; Mestres, N; Manescau, A; Calleja, E; Koiller, B; Daste, P; Riglet, P (Solid State Communications, 1991)

EFFECT OF LOCAL ALLOY DISORDER ON THE EMISSION KINETICS OF DEEP DONORS (DX CENTERS) IN ALXGA1-XAS - MOONEY, PM; THEIS, TN; CALLEJA, E; (Journal Of Electronic Materials, 1991)

EFFECTS OF THE LOCAL ENVIRONMENT ON THE PROPERTIES OF DX CENTERS IN SI-DOPED GAAS AND DILUTE ALXGA1-XAS ALLOYS - CALLEJA, E; GARCIA, F; GOMEZ, A; MUNOZ, E; MOONEY, PM; MORGAN, TN; WRIGHT, SL; (Applied Physics Letters, 1990)

Exponential thermal emission transients from DX centers in heavily Si-doped GaAs - Calleja E; Mooney P; Theis T; Wright S (Applied Physics Letters, 1990)

GATE WIDTH EFFECTS ON DEEP LEVEL SPECTRA IN IMPLANTED GAAS-MESFETS ON LEC SUBSTRATES - BERNAL, D; NOGALES, A; CALLEJA, E; MUNOZ, E; LEE, WS; (Solid-State Electronics, 1990)

PRESSURE EFFECTS ON THE PROPERTIES OF DX CENTERS IN SI-DOPED GAAS AND ALXGA1-XAS ALLOYS - CALLEJA, E; GARCIA, F; MUNOZ, E; MOONEY, PM; MORGAN, TN; WRIGHT, SL; (20th International Conference On The Physics Of Semiconductors, Vols 1-3, 1990)

DIRECT EVIDENCE OF THE DX CENTER LINK TO THE L-CONDUCTION-BAND MINIMUM IN GAALAS - CALLEJA, E; GOMEZ, A; MUNOZ, E; (Applied Physics Letters, 1988)

NOVEL METHOD TO DETERMINE CAPTURE CROSS-SECTION ACTIVATION-ENERGIES BY DEEP-LEVEL TRANSIENT SPECTROSCOPY TECHNIQUES - CRIADO, J; GOMEZ, A; CALLEJA, E; MUNOZ, E; (Applied Physics Letters, 1988)

Inelastic tunneling in AlAs-GaAs-AlAs heterostructures - Mendez E; Calleja E; Wang W (Applied Physics Letters, 1988)

FINE-STRUCTURE OF THE ALLOY-BROADENED THERMAL EMISSION-SPECTRA FROM DX CENTERS IN GAALAS - CALLEJA, E; GOMEZ, A; MUNOZ, E; CAMARA, P; (Applied Physics Letters, 1988)

Resonant tunneling via X-point states in AlAs-GaAs-AlAs heterostructures - Mendez E; Wang W; Calleja E; Gonçalves Da Silva C (Applied Physics Letters, 1987)

CENTERS AT JUNCTION BOUNDARIES IN ALGAAS SINGLE HETEROJUNCTION RED LIGHT-EMITTING-DIODES - CALLEJA, E; MUNOZ, E; GOMEZ, A; JIMENEZ, B; (Journal Of Applied Physics, 1986)

Deep level transient spectroscopy signature analysis of DX centers in AlGaAs and GaAsP - Criado J; Gomez A; Muñoz E; Calleja E (Applied Physics Letters, 1986)

Origin of the nonexponential thermal emission kinetics of DX centers in GaAlAs - Calleja E; Mooney P; Wright S; Heiblum M (Applied Physics Letters, 1986)

DAMAGE CONSTANT AND DEEP-LEVEL TRANSIENT SPECTROSCOPY IN NEUTRON-IRRADIATED GAASP ALLOYS - GARCIA, F; MUNOZ, E; CALLEJA, E; ALCOBER, V; (Journal Of Electronic Materials, 1986)

ON THE CARRIER EMISSION FROM DONOR-RELATED CENTERS IN GAAS1-XPX AND ALXGA1-XAS - CALLEJA, E; GOMEZ, AI; MUNOZ, E; (Solid-State Electronics, 1986)

Tunneling through indirect-gap semiconductor barriers - Mendez E; Calleja E; Wang W (Physical Review b, 1986)

Observation by resonant tunneling of high-energy states in GaAs-Ga1-xAlxAs quantum wells - Mendez E; Calleja E; Da Silva C; Chang L; Wang W (Physical Review b, 1986)

Evidence of hot-electron transfer into an upper valley in GaAs - Heiblum M; Calleja E; Anderson I; Dumke W; Knoedler C; Osterling L (Physical Review Letters, 1986)

TRAPPING CHARACTERISTICS OF TE-RELATED CENTERS IN GAAS1-XPX - CALLEJA, E; MUNOZ, E; JIMENEZ, B; GOMEZ, A; GARCIA, F; KELLERT, F; (Journal Of Applied Physics, 1985)

EL2-RELATED DEFECTS IN NEUTRON-IRRADIATED GAAS1-XPX ALLOYS - MUNOZ, E; GARCIA, F; JIMENEZ, B; CALLEJA, E; GOMEZ, A; ALCOBER, V; (Applied Physics Letters, 1985)

DEEP-LEVEL SPECTROSCOPY BY TRANSIENT CAPACITANCE TECHNIQUES UNDER ELECTRICAL RESONANCE - IZPURA, JI; HERRERO, JM; SANDOVAL, F; CALLEJA, E; LACRUZ, A; MUNOZ, E; (Ieee Transactions On Instrumentation And Measurement, 1984)

ELECTROPLATED AU-GAAS1-XPX AND AU-GA1-XALXAS SCHOTTKY BARRIERS - LOPEZCORONADO, M; AGUILAR, M; MARTINEZ, MT; CALLEJA, E; MUNOZ, E; (Electronics Letters, 1983)

ELECTRON TRAPS IN GAAS1-XPX ALLOYS - CALLEJA, E; MUNOZ, E; GARCIA, F; (Applied Physics Letters, 1983)

Effect of vacuum annealing cleaning on electrical characteristics of GaAs1?x Px-Mo schottky diodes - Calleja E; Piqueras J (Electronics Letters, 1981)

DEEP CENTERS INTRODUCED BY ARGON ION-BOMBARDMENT IN N-TYPE SILICON - GARRIDO, J; CALLEJA, E; PIQUERAS, J; (Solid-State Electronics, 1981)

Resonant tunneling spectroscopy in Schottky diodes - Calleja E; Piqueras J (Journal Of Applied Physics, 1980)

Current/voltage characteristics of degenerated molybdenum and platinum schottky diodes - Martinez J; Calleja E; Piqueras J (Electronics Letters, 1980)

Resonant tunnelling in thermally degenerated molybdenum and platinum silicon Schottky diodes - Martinez J; Calleja E; Piqueras J (Physica Status Solidi A-Applications And Materials Science, 1980)

Thermal degeneration of Mo and Pt silicon Schottky diodes - Calleja E; Garrido J; Piqueras J; Martinez A (Solid-State Electronics, 1980)

Argon-ion bombardment effects on the electrical characteristics of platinum-silicon schottky diodes - Garrido J; Calleja E; Piqueras J (Electronics Letters, 1979)

pn Junction applications and transport properties in polysilicon rods - Criado A; Calleja E; Martinez J; Piqueras J; Muñoz E (Solid-State Electronics, 1979)

S. Lazic, E. Gallardo, J. M. Calleja, F. Agulló-Rueda, J. Grandal, M. A. Sánchez-García, E. Calleja, A. Trampert, E. Luna "Raman Scattering By Coupled Plasmon-Lo Phonons In Inn Nanocolumns" 7th International Conference on Nitride Semiconductors (ICNS07) L - S. Lazić J. M. Calleja; F. Agulló-Rueda; E. Luna; E. Gallardo; A. Trampert; Sanchez Garcia, Miguel Angel; GRANDAL QUINTANA, JAVIER; Calleja Pardo, Enrique (2007)

S. Lazic, E. Gallardo, J.M. Calleja, F. Agulló-Rueda, J. Grandal, M.A. Sánchez-Garcia, E. Calleja "Raman Scattering By Longitudinal Optical Phonons In Inn Nanocolumns Grown On Si(111) And Si(001) Substrates" 13th International Conference on Modulated Semi - S. Lazic; J.M Calleja; F. AGULLÓ-RUEDA; E. Gallardo; Sanchez Garcia, Miguel Angel; GRANDAL QUINTANA, JAVIER; Calleja Pardo, Enrique (2007)

Resonant Raman scattering in strained and relaxed inxGa 1-xN/GaN multiple quantum wells - Lazi?, S.; Calleja, J.M.; Naranjo, F.B.; Fernández, S.; Calleja, E. (Materials Science Forum, 2005)

TEM study of (Ga,Al)N nanocolumns and embedded GaN nanodiscs - Trampert A; Ristic J; Jahn U; Calleja E; Ploog K (Design And Nature, 2004)

TEM study of (Ga,Al)N nanocolumns and embedded GaN nanodiscs - Trampert, A; Ristic, J; Jahn, U; Calleja, E; Ploog, KH; (Institute Of Physics Conference Series, 2003)

Nanoestructura de Semiconductores como Componentes para La Información Cuántica - FERNANDEZ GARRIDO, SERGIO (Participante); GRACIA VERANO, VICTOR (Investigador principal (IP)); CERUTTI CERUTTI, LAURENT (Investigador principal (IP)); RISTIC RISTIC, JELENA (Investigador principal (IP)); SANZ MONASTERIO, MIKEL (Investigador principal (IP)); HIERRO CANO, ADRIAN (Participante); MONTES BAJO, MIGUEL (Participante); FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Participante); Calleja Pardo, Enrique (Investigador principal (IP)) (2005)

Growth of non-polar m-plane GaN pseudo-substrates by Molecular beam epitaxy - Fernando-Saavedra A; Albert S; Bengoechea-Encabo A; Trampert A; Xie M; Sanchez-Garcia MA; Calleja E (Journal Of Crystal Growth, 2023)

Graphene Electrodes For Nano-LEDs - Javier Martinez Rodrigo; Steven Albert; Miguel Angel Sanchez Garcia; Alberto Bosca Mojena; Ana Mª Bengoechea Encabo; Enrique Calleja Pardo; Fernando Calle Gomez (Development Of An Analytic Nodal Diffusion Solver In Multigroups For 3d Reactor Cores With Rectangular Or Hexagonal Assemblies., 2012)