Calleja Pardo, Enrique enrique.calleja@upm.es
Publications
- Articles 276
- Books 0
- Book chapters 2
- Conferences 172
- Working papers 0
- Technical reports 0
- Research projects 19
- Supervised theses 14
- Patent or software license 0
Composition and luminescence of AlInGaN layers grown by plasma-assisted molecular beam epitaxy
- Bejtka, K.
- Edwards, P. R.
- Martin, R. W.
- Fernandez-Garrido, S.
- Calleja, E.;
Journal Of Applied Physics - 22/10/2008
10.1063/1.2993549 View at source
- ISSN 00218979
Comparative study of single InGaN layers grown on Si(111) and GaN(0001) templates: The role of surface wetting and epitaxial constraint
- Gómez, VJ
- Gacevic, Z
- Soto-Rodríguez, PED
- Aseev, P
- Nötzel, R
- Calleja, E
- Sánchez-García, MA
Journal Of Crystal Growth (p. 48-54) - 1/8/2016
10.1016/j.jcrysgro.2016.04.007 View at source
- ISSN 00220248
Columnar AlGaN/GaN nanocavities with AlN/GaN Bragg reflectors grown by molecular beam epitaxy on Si(111)
- Risti? J, Calleja E, Trampert A, Fernández-Garrido S, Rivera C, Jahn U, Ploog KH
Physical Review Letters (p. 146102-146102) - 15/4/2005
- ISSN 00319007
- iMarina
Charge accumulation effects in InGaAs/GaAs [111]-oriented piezoelectric multiple quantum wells
- Sanchez-Rojas, JL
- Sacedon, A
- Valtuena, JF
- Sanz-Hervas, A
- Izpura, I
- Calleja, E
- Munoz, E
- Abril, EJ
- Aguilar, M;
Microelectronics Journal (p. 767-775) - 1/1/1997
10.1016/s0026-2692(96)00115-2 View at source
- ISSN 00262692
Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)
- Glaser, ER
- Carlos, WE
- Braga, GCB
- Freitas, JA
- Moore, WJ
- Shanabrook, BV
- Wickenden, AE
- Koleske, DD
- Henry, RL
- Bayerl, MW
- Brandt, MS
- Obloh, H
- Kozodoy, P
- DenBaars, SP
- Mishra, UK
- Nakamura, S
- Haus, E
- Speck, JS
- Van Nostrand, JE
- Sanchez, MA
- Calleja, E
- Ptak, AJ
- Myers, TH
- Molnar, RJ;
Materials Science And Engineering B-Advanced Functional Solid-State Materials (p. 39-48) - 30/5/2002
10.1016/s0921-5107(02)00007-7 View at source
- ISSN 09215107
Characterization of GaN quantum discs embedded in AlxGa1-xN nanocolumns grown by molecular beam epitaxy
- Ristic, J
- Calleja, E
- Sanchez-Garcia, MA
- Ulloa, JM
- Sanchez-Paramo, J
- Calleja, JM
- Jahn, U
- Trampert, A
- Ploog, KH
Physical Review b - 1/1/2003
10.1103/physrevb.68.125305 View at source
- ISSN 01631829
Characterization and modeling of photoconductive GaN ultraviolet detectors
- Monroy, E
- Garrido, JA
- Munoz, E
- Izpura, I
- Sanchez, FJ
- SanchezGarcia, MA
- Calleja, E
- Beaumont, B
- Gibart, P
M R S Internet Journal Of Nitride Semiconductor Research: (Materials Research Society) (p. art. no.-12) - 1/1/1997
10.1557/s1092578300001381 View at source
- ISSN 10925783
Characterisation by TEM and X-ray diffraction of linearly graded composition InGaAs buffer layers on (001) GaAs
- Pacheco, FJ
- Araujo, D
- Molina, SI
- Garcia, R
- Sacedon, A
- Gonzalez-Sanz, F
- Calleja, E
- Kidd, P
- Lourenco, MA;
Materials Science And Technology (p. 1273-1278) - 1/1/1998
10.1179/mst.1998.14.12.1273 View at source
- ISSN 02670836
Cathodoluminescence spectroscopy and imaging of GaN/(Al,Ga)N nanocolumns containing quantum disks
- Jahn, Uwe
- Ristic, Jelena
- Calleja, Enrique;
Applied Physics Letters - 30/4/2007
10.1063/1.2724913 View at source
- ISSN 00036951
Carrier-confinement effects in nanocolumnar GaN/AlxGa1-xN quantum disks grown by molecular-beam epitaxy
- Ristic, J
- Rivera, C
- Calleja, E
- Fernandez-Garrido, S
- Povoloskyi, M
- Di Carlo, A;
Physical Review b - 15/8/2005
10.1103/physrevb.72.085330 View at source
- ISSN 01631829
This researcher has no books.
TEM study of (Ga, AI)N nanocolumns and embedded GaN nanodiscs
- Trampert A
- Ristic J
- Jahn U
- Calleja E
- Ploog K
Microscopy Of Semiconducting Materials 2003 (p. 167-170) - 1/1/2018
Ga(in)N nanowires grown by molecular beam epitaxy: From quantum light emitters to nanotransistors
- Gačević Ž
- Calleja E
Novel Compound Semiconductor Nanowires: Materials, Devices, And Applications (p. 319-364) - 1/1/2017
Z. Gacevic, S. Fernández-Garrido, E. Calleja, D. Hosseini, S. Estrade and F. Peiró "Structural properties of InAlN single layers nearly latice-matched to GaN grown by plasma assisted molecular beal epitaxy"
- S. Fernández-Garrido
- S. Estradé
- F. Peiró
- D. Hosseini
- Gacevic, Zarko
- Calleja Pardo, Enrique
"Structural Properties Of Inaln Single Layers Nearly Latice-Matched To Gan Grown By Plasma Assisted Molecular Beal Epitaxy" (p. 0-0) - 20/3/2011
- iMarina
Z. Gacevic, P. Lefebvre, F. Bertram, G. Schmidt, P. Veit, J. Christen, and E. Calleja "Growth and characterization of InGaN/GaN quantum dots for violet/blue applications"
- P. Lefebvre
- P. Veit
- J. Christen
- G. Schmidt
- F. Bertram
- Gacevic, Zarko
- Calleja Pardo, Enrique
Growth And Characterization Of Ingan/Gan Quantum Dots For Violet/Blue Applications (p. 0-0) - 10/7/2012
- iMarina
Z. GACEVIC, S. FERNÁNDEZ-GARRIDO, E. CALLEJA, E.LUNA, A. TRAMPERT "Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma assisted molecular beam epitaxy" 15th European Molecular Beam Epitaxy Workshop Zakopane (Poland
- Gacevic, Zarko
- Calleja Pardo, Enrique
"Growth And Characterization Of Lattice-Matched Inaln/Gan Bragg Reflectors Grown By Plasma Assisted Molecular Beam Epitaxy" (p. 0-0) - 8/3/2009
- iMarina
Z. GACEVIC, S. FERNÁNDEZ-GARRIDO, E. CALLEJA "New approach to grow high reflectivity Al(Ga)N bragg reflectors by plasma-assited molecular beam epitaxy" 8th International Conference on Nitride Semiconductors Jeju (Korea), 2009
- Gacevic, Zarko
- Calleja Pardo, Enrique
"New Approach To Grow High Reflectivity Al(Ga)N Bragg Reflectors By Plasma-Assited Molecular Beam Epitaxy" (p. 0-0) - 18/10/2009
- iMarina
Z. GACEVIC, S. FERNÁNDEZ-GARRIDO, E. CALLEJA "Current status and further challenge in MBE growth of lattice-matched InAlN/GaN Bragg reflectors" 8th International Conference on Nitride Semiconductors Jeju (Korea), 2009
- Gacevic, Zarko
- Calleja Pardo, Enrique
"Current Status And Further Challenge In Mbe Growth Of Lattice-Matched Inaln/Gan Bragg Reflectors" (p. 0-0) - 18/5/2009
- iMarina
XRD analysis of InGaN uniform layers grown on Si (111) without any buffer layers and on Sapphire
- Aseev, Pavel
- SOTO RODRIGUEZ, PAUL
- Notzel, Richard
- Gacevic, Zarko
- Sanchez Garcia, Miguel Angel
- Calleja Pardo, Enrique
Proceedings (p. 0-3) - 24/8/2014
- iMarina
Visible and solar-blind AlGaN metal-semiconductor-metal photodetectors grown on Si(111) substrates
- Pau, JL
- Muñoz, E
- Sánchez-García, MA
- Calleja, E
Physica Status Solidi A-Applications And Materials Science (p. 314-319) - 1/1/2002
10.1002/1521-396x(200208)192:2<314::aid-pssa314>3.0.co;2-y View at source
- ISSN 00318965
Valence EELS analysis of multiple InGaN-QW structure for electronic properties
- S. Estradé
- N. García-Lepetit
- L. López-Conesa
- Francesca Peiró
- C. Magen
- A. Eljarrat
- Gacevic, Zarko
- Calleja Pardo, Enrique
Proceedings (p. 0-3) - 11/2/2015
- iMarina
Understanding the selective area nucleation and growth of GaN Nanocolumns by MBE using Ti nanomasks
- et al
- Sanchez Garcia, Miguel Angel
- Calleja Pardo, Enrique
Proceedings (p. 0-0) - 2/11/2011
- iMarina
This researcher has no working papers.
This researcher has no technical reports.
Towards p-type conductivity in In0.5Ga0.5N nanocolumns on a Si (100) substrate with GaN buffer layers
- Calleja Pardo, Enrique (Investigador principal (IP))
- XIE, MENGYAO (Becario/a)
- Sanchez Garcia, Miguel Angel (Participante)
Period: 15-06-2015 - 14-06-2017
Type of funding: International
Amount of funding: 170121,60 Euros.
- iMarina
Substrate nanopatterning by e-beam lithography to growth ordered arrays of III-Nitride nanodetectors: application to IR detectors, emitters, and new Solar Cells
- Calleja Pardo, Enrique (Investigador principal (IP))
- Sanchez Garcia, Miguel Angel (Participante)
Period: 01-01-2011 - 31-12-2012
Type of funding: International
Amount of funding: 153917,00 Euros.
- iMarina
Smart nanostructured semiconductors for energy saving light solutions
- FERNANDEZ GARRIDO, SERGIO (Participante)
- Calleja Pardo, Enrique (Investigador principal (IP))
- GRANDAL QUINTANA, JAVIER (Participante)
- FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Participante)
- Sanchez Garcia, Miguel Angel (Participante)
- HIERRO CANO, ADRIAN (Participante)
- PRIETO MARTIN, JOSE LUIS (Participante)
- PADILLA GONZALEZ, ISIDORO (Participante)
- Gacevic, Zarko (Participante)
- Martínez Rodrigo, Javier (Participante)
- Notzel, Richard (Participante)
- Calle Gómez, Fernando (Participante)
Period: 01-09-2009 - 31-08-2012
Type of funding: International
Amount of funding: 800650,00 Euros.
- iMarina
Nanohilos basados en GaN para sistemas de información cuántica y circuitos digitales
- FERNANDO SAAVEDRA, AMALIA LUISA (Participante)
- HERRANZ FEITO, MIGUEL (Investigador/a)
- Sanchez Garcia, Miguel Angel (Investigador principal (IP))
- FOTEINOPOULOU, AIKATERINI (Participante)
- Gacevic, Zarko (Participante)
- Calleja Pardo, Enrique (Participante)
- KARAGIANNIS, NIKOLAOS (Participante)
- LASO CARBAJO, MANUEL (Participante)
Period: 01-01-2019 - 31-07-2022
Type of funding: National
Amount of funding: 193963,00 Euros.
- iMarina
Nanoestructuras de semiconductores como componentes par ala información cuántica
- Enrique Calleja Pardo (Investigador principal (IP))
- MONTES BAJO, MIGUEL (Investigador/a)
Period: 01-01-2006 - 01-01-2009
- iMarina
Nanoestructura de Semiconductores como Componentes para La Información Cuántica
- FERNANDEZ GARRIDO, SERGIO (Participante)
- GRACIA VERANO, VICTOR (Investigador principal (IP))
- CERUTTI CERUTTI, LAURENT (Investigador principal (IP))
- RISTIC RISTIC, JELENA (Investigador principal (IP))
- SANZ MONASTERIO, MIKEL (Investigador principal (IP))
- HIERRO CANO, ADRIAN (Participante)
- MONTES BAJO, MIGUEL (Participante)
- FERNANDEZ GONZALEZ, ALVARO DE GUZMAN (Participante)
- Calleja Pardo, Enrique (Investigador principal (IP))
Period: 01-12-2005 - 01-01-2010
Type of funding: Regional
- iMarina
Materiales y dispositivos optoelectrónicos basados en nitruros del grupo- III
- Calleja Pardo, Enrique (Investigador principal (IP))
Period: 19-12-2019 - 31-12-2021
- iMarina
Instalación/Actuación: Central de Tecnología del ISOM
- Calleja Pardo, Enrique (Investigador principal (IP))
Period: 13-11-2008 - 15-10-2009
Type of funding: National
- iMarina
InDaN and AIGaN semi-polar and non-polar pseudo-substrates made by Molecular Beam Epitaxy by ordered coalescence of nanocrystals
- Calleja Pardo, Enrique (Investigador principal (IP))
Period: 01-01-2018 - 15-09-2022
- iMarina
High quality and intrinsic Properties of InN and indium rich Nitride Alloys
- Sanchez Garcia, Miguel Angel (Investigador principal (IP))
- Calle Gómez, Fernando (Participante)
- Calleja Pardo, Enrique (Participante)
Period: 01-10-2008 - 30-09-2012
Type of funding: International
Amount of funding: 388526,00 Euros.
- iMarina
nxGa1-xN layers, nanowires, and nanodots on Silicon for clean energy applications
- Calleja Pardo, Enrique (Director)
- Gacevic, Zarko (Director) Doctorando: Aseev, Pavel
1/1/2017
- iMarina
Investigations on III-nitrides nanostructures: application to renewable energies and bio-sensing
- Calleja Pardo, Enrique (Director)
- Gacevic, Zarko (Director) Doctorando: Soto Rodriguez, Paul Eduardo David
1/1/2016
- iMarina
Growth and characterization of group-iii nitride nanocolumnar structures - crecimiento y caracterización de estructuras nanocolumnares de nitruros dle grupo iii
- Enrique Calleja Pardo (Director) Doctorando: Jelena Ristic
1/1/2006
- iMarina
Growth and characterization of gan/aln non-polar pseudo-substrates
- Calleja Pardo, Enrique (Director) Doctorando: Fernando Saavedra, Amalia Luisa
1/1/2021
- iMarina
Fabricación, caracterización y aplicaciones de detectores de UV basados en AlGaN.
- Muñoz Merino, Elías (Director)
- Calleja Pardo, Enrique (Director) Doctorando: PAU VIZCAINO, José Luis
1/1/2003
- iMarina
Espejos de Braga de AlGaN/GaN crecidos por Epitaxia de Haces Moleculares para Dispositivos Optoelectrónicos de Cavidad Resonante
- Enrique Calleja Pardo (Director)
- Fernando Calle Gómez (Director) Doctorando: Fernández Ruano, Susana María
1/1/2004
- iMarina
Crecimiento, fabricación y caracterización de diodos electroluminiscentes basados en pozos cuánticos de InGaN
- Enrique Calleja Pardo (Director) Doctorando: Fernando Bernabé Naranjo Vega
1/6/2003
- iMarina
Crecimiento y fabricación de transistores HEMT de AlGaN/GaN por epitaxia de haces moleculares
- Enrique Calleja Pardo (Director) Doctorando: Ana Jimenez Martín
1/1/2003
- iMarina
Crecimiento y caracterización de nitruros del grupo III sobre Si (111) por epitaxia de haces moleculares.
- Calleja Pardo, Enrique (Director) Doctorando: SANCHEZ GARCIA, Miguel Angel
1/1/2000
- iMarina
This researcher has no patents or software licenses.
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