Naranjo Vega, Fernando Bernabé

Publications

Influence of the AlN interlayer thickness on the photovoltaic properties of in-rich AlInN on Si heterojunctions deposited by RF sputtering

  • Valdueza-Felip, S.
  • Núñez-Cascajero, A.
  • Blasco, R.
  • Montero, D.
  • Grenet, L.
  • De La Mata, M.
  • Fernández, S.
  • Rodríguez-De Marcos, L.
  • Molina, S.I.
  • Olea, J.
  • Naranjo, F.B.
... View more Collapse

AIP Advances - 2018

Editor: American Institute of Physics Inc.

10.1063/1.5041924 View at source

  • ISSN/ISBN 2158-3226

Effect of different buffer layers on the quality of InGaN layers grown on Si

  • Gómez, V.J.
  • Grandal, J.
  • Núñez-Cascajero, A.
  • Naranjo, F.B.
  • Varela, M.
  • Sánchez-García, M.A.
  • Calleja, E.
... View more Collapse

Aip Advances - 1/10/2018

Editor: American Institute of Physics Inc.

10.1063/1.5046756 View at source

  • ISSN 21583226
  • ISSN/ISBN 2158-3226

Local vibrational modes of H complexes in Mg-doped GaN grown by molecular beam epitaxy

  • Cuscó, R.
  • Artús, L.
  • Pastor, D.
  • Naranjo, F.B.
  • Calleja, E.

Applied Physics Letters (p. 897-899) - 9/2/2004

10.1063/1.1645668 View at source

  • ISSN 00036951
  • ISSN/ISBN 0003-6951

Carrier localization in InN/InGaN multiple-quantum wells with high In-content

  • Valdueza-Felip, S.
  • Rigutti, L.
  • Naranjo, F.B.
  • Ruterana, P.
  • Mangeney, J.
  • Julien, F.H.
  • González-Herráez, M.
  • Monroy, E.
... View more Collapse

Applied Physics Letters - 2012

10.1063/1.4742157 View at source

  • ISSN/ISBN 0003-6951

Third order nonlinear susceptibility of InN at near band-gap wavelengths

  • Naranjo, F.B.
  • González-Herráez, M.
  • Fernández, H.
  • Solis, J.
  • Monroy, E.

Applied Physics Letters - 2007

10.1063/1.2709891 View at source

  • ISSN/ISBN 0003-6951

Resonant Raman scattering in strained and relaxed InGaN/GaN multi-quantum wells

  • Lazić, S.
  • Moreno, M.
  • Calleja, J.M.
  • Trampert, A.
  • Ploog, K.H.
  • Naranjo, F.B.
  • Fernandez, S.
  • Calleja, E.
... View more Collapse

Applied Physics Letters (p. 1-3) - 7/2/2005

10.1063/1.1861496 View at source

  • ISSN 00036951
  • ISSN/ISBN 0003-6951

Resonant-cavity InGaN multiple-quantum-well green light-emitting diode grown by molecular-beam epitaxy

  • Naranjo, F.B.
  • Fernández, S.
  • Sánchez-García, M.A.
  • Calle, F.
  • Calleja, E.

Applied Physics Letters (p. 2198-2200) - 25/3/2002

10.1063/1.1463701 View at source

  • ISSN 00036951
  • ISSN/ISBN 0003-6951

Nonlinear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths

  • Naranjo, F.B.
  • Kandaswamy, P.K.
  • Valdueza-Felip, S.
  • Calvo, V.
  • González-Herráez, M.
  • Martín-López, S.
  • Corredera, P.
  • Ḿndez, J.A.
  • Mutta, G.R.
  • Lacroix, B.
  • Ruterana, P.
  • Monroy, E.
... View more Collapse

Applied Physics Letters - 2011

10.1063/1.3535609 View at source

  • ISSN/ISBN 0003-6951

Strong localization in InGaN layers with high In content grown by molecular-beam epitaxy

  • Naranjo, F.B.
  • Sánchez-García, M.A.
  • Calle, F.
  • Calleja, E.
  • Jenichen, B.
  • Ploog, K.H.

Applied Physics Letters (p. 231-233) - 14/1/2002

Editor: American Institute of Physics Inc.

10.1063/1.1432751 View at source

  • ISSN 00036951
  • ISSN/ISBN 0003-6951

High-quality distributed Bragg reflectors based on AlxGa1-xN/GaN multilayers grown by molecular-beam epitaxy

  • Fernández, S.
  • Naranjo, F.B.
  • Calle, F.
  • Sánchez-García, M.A.
  • Calleja, E.
  • Vennegues, P.
  • Trampert, A.
  • Ploog, K.H.
... View more Collapse

Applied Physics Letters (p. 2136-2138) - 1/10/2001

Editor: American Institute of Physics Inc.

10.1063/1.1401090 View at source

  • ISSN 00036951
  • ISSN/ISBN 0003-6951

This researcher has no books.

This researcher has no book chapters.

Desarrollo de nitruros basados en InN para aplicaciones fotovoltaicas

  • Arántzazu Núñez Cascajero
  • Laura Monteagudo Lerma
  • Marco Jiménez Rodríguez
  • Sirona Valdueza Felip
  • Eva Monroy
  • Ana Isabel Ruiz Matute
  • Miguel González Herráez
  • Fernando Bernabé Naranjo Vega
... View more Collapse

Quintas Jornadas de Jóvenes Investigadores de la Universidad de Alcalá: Ciencias e Ingenierías (p. 65-74) - 2016

Editor: Editorial Universidad de Alcalá

  • ISSN/ISBN 978-84-16133-98-7

Development of two-step etching approach for aluminium doped zinc oxide using a combination of standard HCl and NH4Cl etch steps

  • Fernández, S.
  • Pust, S.E.
  • Hüpkes, J.
  • Naranjo, F.B.

Thin Solid Films (p. 4678-4684) - 2012

10.1016/j.tsf.2011.10.190 View at source

  • ISSN/ISBN 0040-6090

This researcher has no working papers.

This researcher has no technical reports.

This researcher has no research projects.

This researcher has no supervised thesis.

This researcher has no patents or software licenses.

Last data update: 4/24/24 1:12 PM