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Valdueza Felip, Sirona

Electrónica / Universidad de Alcalá

Publications

Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputtering

  • Núñez-Cascajero, A.
  • Valdueza-Felip, S.
  • Blasco, R.
  • de la Mata, M.
  • Molina, S.I.
  • González-Herráez, M.
  • Monroy, E.
  • Naranjo, F.B.
... View more Collapse

Journal of Alloys and Compounds (p. 824-830) - 2018

Editor: Elsevier Ltd

10.1016/j.jallcom.2018.08.059 View at source

  • ISSN/ISBN 0925-8388

Effect of the barrier thickness on the performance of multiple-quantum-well InGaN photovoltaic cells

  • Redaelli, L.
  • Mukhtarova, A.
  • Ajay, A.
  • Núñez-Cascajero, A.
  • Valdueza-Felip, S.
  • Bleuse, J.
  • Durand, C.
  • Eymery, J.
  • Monroy, E.
... View more Collapse

Japanese Journal of Applied Physics - 2015

Editor: Japan Society of Applied Physics

10.7567/jjap.54.072302 View at source

  • ISSN/ISBN 1347-4065

Photovoltaic response of InGaN/GaN multiple-quantum well solar cells

  • Valdueza-Felip, S.
  • Mukhtarova, A.
  • Pan, Q.
  • Altamura, G.
  • Grenet, L.
  • Durand, C.
  • Bougerol, C.
  • Peyrade, D.
  • González-Posada, F.
  • Eymery, J.
  • Monroy, E.
... View more Collapse

Japanese Journal of Applied Physics - 2013

10.7567/jjap.52.08jh05 View at source

  • ISSN/ISBN 0021-4922

Performance improvement of AlNGaN-based intersubband detectors by using quantum dots

  • Hofstetter, D.
  • Di Francesco, J.
  • Kandaswamy, P.K.
  • Das, A.
  • Valdueza-Felip, S.
  • Monroy, E.

IEEE Photonics Technology Letters (p. 1087-1089) - 2010

10.1109/lpt.2010.2050057 View at source

  • ISSN/ISBN 1041-1135

Characterization of the resonant third-order nonlinear susceptibility of Si-doped GaN-AlN quantum wells and quantum dots at 1.5 μm

  • Valdueza-Felip, S.
  • Naranjo, F.B.
  • Gonzalez-Herraez, M.
  • Fernandez, H.
  • Solis, J.
  • Guillot, F.
  • Monroy, E.
  • Nevou, L.
  • Tchernycheva, M.
  • Julien, F.H.
... View more Collapse

IEEE Photonics Technology Letters (p. 1366-1368) - 2008

10.1109/lpt.2008.926842 View at source

  • ISSN/ISBN 1041-1135

Nonlinear absorption at optical telecommunication wavelengths of InN films deposited by RF sputtering

  • Valdueza-Felip, S.
  • Monteagudo-Lerma, L.
  • Mangeney, J.
  • Gonzalez-Herraez, M.
  • Julien, F.H.
  • Naranjo, F.B.

IEEE Photonics Technology Letters (p. 1998-2000) - 2012

10.1109/lpt.2012.2217484 View at source

  • ISSN/ISBN 1041-1135

Design of AlInN on silicon heterojunctions grown by sputtering for solar devices

  • Blasco, R.
  • Naranjo, F.B.
  • Valdueza-Felip, S.

Current Applied Physics (p. 1244-1252) - 2020

Editor: Elsevier B.V.

10.1016/j.cap.2020.07.018 View at source

  • ISSN/ISBN 1567-1739

Carrier localization in InN/InGaN multiple-quantum wells with high In-content

  • Valdueza-Felip, S.
  • Rigutti, L.
  • Naranjo, F.B.
  • Ruterana, P.
  • Mangeney, J.
  • Julien, F.H.
  • González-Herráez, M.
  • Monroy, E.
... View more Collapse

Applied Physics Letters - 2012

10.1063/1.4742157 View at source

  • ISSN/ISBN 0003-6951

Nonlinear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths

  • Naranjo, F.B.
  • Kandaswamy, P.K.
  • Valdueza-Felip, S.
  • Calvo, V.
  • González-Herráez, M.
  • Martín-López, S.
  • Corredera, P.
  • Ḿndez, J.A.
  • Mutta, G.R.
  • Lacroix, B.
  • Ruterana, P.
  • Monroy, E.
... View more Collapse

Applied Physics Letters - 2011

10.1063/1.3535609 View at source

  • ISSN/ISBN 0003-6951

Dependence of the photovoltaic performance of pseudomorphic InGaN/GaN multiple-quantum-well solar cells on the active region thickness

  • Mukhtarova, A.
  • Valdueza-Felip, S.
  • Redaelli, L.
  • Durand, C.
  • Bougerol, C.
  • Monroy, E.
  • Eymery, J.
... View more Collapse

Applied Physics Letters - 2016

Editor: American Institute of Physics Inc.

10.1063/1.4947445 View at source

  • ISSN/ISBN 0003-6951

This researcher has no books.

This researcher has no book chapters.

Desarrollo de nitruros basados en InN para aplicaciones fotovoltaicas

  • Arántzazu Núñez Cascajero
  • Laura Monteagudo Lerma
  • Marco Jiménez Rodríguez
  • Sirona Valdueza Felip
  • Eva Monroy
  • Ana Isabel Ruiz Matute
  • Miguel González Herráez
  • Fernando Bernabé Naranjo Vega
... View more Collapse

Quintas Jornadas de Jóvenes Investigadores de la Universidad de Alcalá: Ciencias e Ingenierías (p. 65-74) - 2016

Editor: Editorial Universidad de Alcalá

  • ISSN/ISBN 978-84-16133-98-7

Performance improvement of AlN/GaN-based intersubband detectors thanks to quantum dot active regions

  • Hofstetter, D.
  • Di Francesco, J.
  • Baumann, E.
  • Giorgetta, F.R.
  • Kandaswamy, P.K.
  • Das, A.
  • Valdueza-Felip, S.
  • Monroy, E.
... View more Collapse

Proceedings of SPIE - The International Society for Optical Engineering - 2010

10.1117/12.861569 View at source

  • ISSN/ISBN 0277-786X

Improved performance of SPR optical fiber sensors with InN as dielectric cover

  • Esteban, Ó.
  • Naranjo, F.B.
  • Díaz-Herrera, N.
  • Valdueza-Felip, S.
  • Navarrete, M.C.
  • González Cano, A.

Proceedings of SPIE - The International Society for Optical Engineering - 2011

10.1117/12.885081 View at source

  • ISSN/ISBN 0277-786X

Novel InN/InGaN multiple quantum well structures for slow-light generation at telecommunication wavelengths

  • Naranjo, F.B.
  • Kandaswamy, P.K.
  • Valdueza-Felip, S.
  • Lahourcade, L.
  • Calvo, V.
  • González-Herráez, M.
  • Martín-López, S.
  • Corredera, P.
  • Monroy, E.
... View more Collapse

Physica Status Solidi (C) Current Topics in Solid State Physics (p. 100-103) - 2010

Editor: Wiley-VCH Verlag

10.1002/pssc.200982628 View at source

  • ISSN/ISBN 1610-1642

P-type doping of semipolar GaN(1122) by plasma-assisted molecular-beam epitaxy

  • Das, A.
  • Lahourcade, L.
  • Pernot, J.
  • Valdueza-Felip, S.
  • Ruterana, P.
  • Laufer, A.
  • Eickhoff, M.
  • Monroy, E.
... View more Collapse

Physica Status Solidi (C) Current Topics in Solid State Physics (p. 1913-1915) - 2010

10.1002/pssc.200983618 View at source

  • ISSN/ISBN 1862-6351

Development of ZnO:Al-based transparent contacts deposited at low-temperature by RF-sputtering on InN layers

  • Fernández, S.
  • Naranjo, F.B.
  • de Abril, O.
  • Valdueza-Felip, S.

Physica Status Solidi (C) Current Topics In Solid State Physics (p. 1065-1069) - 1/3/2012

10.1002/pssc.201100146 View at source

  • ISSN 18626351
  • ISSN/ISBN 1862-6351

Characterization of the resonant third-order nonlinear susceptibility of Si-doped GaN/AlN quantum wells and quantum dots at 1.5 μm

  • Valdueza-Felip, S.
  • Naranjo, F.B.
  • González-Herráez, M.
  • Fernández, H.
  • Solis, J.
  • Guillot, F.
  • Monroy, E.
  • Tchernycheva, M.
  • Nevou, L.
  • Julián, F.H.
... View more Collapse

Optics InfoBase Conference Papers - 2008

Editor: Optical Society of America

  • ISSN/ISBN 2162-2701

Study of high In-content AlInN deposition on p-Si(111) by RF-sputtering

  • Núñez-Cascajero, A.
  • Monteagudo-Lerma, L.
  • Valdueza-Felip, S.
  • Navío, C.
  • Monroy, E.
  • González-Herráez, M.
  • Naranjo, F.B.
... View more Collapse

Japanese Journal of Applied Physics - 2016

Editor: Japan Society of Applied Physics

10.7567/jjap.55.05fb07 View at source

  • ISSN/ISBN 1347-4065

Novel nitride - Based materials for nonlinear optical signal processing applications at 1.5 μm

  • Valdueza-Felip, S.
  • Naranjo, F.B.
  • González-Herráez, M.
  • Fernández, H.
  • Solis, J.
  • Fernández, S.
  • Guillot, F.
  • Monroy, E.
  • Grandal, J.
  • Sánchez-García, M.A.
... View more Collapse

2007 Ieee International Symposium On Intelligent Signal Processing, Wisp (p. 1-6) - 1/12/2007

10.1109/wisp.2007.4447511 View at source

  • ISSN/ISBN 9781424408306

This researcher has no working papers.

This researcher has no technical reports.

This researcher has no research projects.

This researcher has no supervised thesis.

This researcher has no patents or software licenses.

Last data update: 4/24/24 1:02 PM