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Pampillon Arce, Maria Angela ma.pampillon@upm.es

INGENIERÍA ELECTRÓNICA / Universidad Politécnica de Madrid

Publications

Anomalous thermal oxidation of gadolinium thin films deposited on silicon by high pressure sputtering

  • Pampillon, M. A.
  • Feijoo, P. C.
  • San Andres, E.
  • Lucia, M. L.
  • del Prado, A.
  • Toledano-Luque, M.;

Microelectronic Engineering (p. 2991-2996) - 1/9/2011

10.1016/j.mee.2011.04.058 View at source

  • ISSN 01679317

Optimization of scandium oxide growth by high pressure sputtering on silicon

  • Feijoo, P. C.
  • Pampillon, M. A.
  • San Andres, E.
  • Lucia, M. L.;

Thin Solid Films (p. 81-86) - 30/12/2012

10.1016/j.tsf.2012.11.008 View at source

  • ISSN 00406090

Interface quality of Sc2O3 and Gd2O3 films based metal-insulator-silicon structures using Al, Pt, and Ti gates: Effect of buffer layers and scavenging electrodes

  • Gomez, Alfonso
  • Castan, Helena
  • Garcia, Hector
  • Duenas, Salvador
  • Bailon, Luis
  • Angela Pampillon, Maria
  • Carlos Feijoo, Pedro
  • San Andres, Enrique;
... View more Collapse

Journal Of Vacuum Science And Technology B: Nanotechnology And Microelectronics - 1/1/2013

10.1116/1.4768678 View at source

  • ISSN 21662746

High pressure sputtering as a viable technique for future high permittivity dielectric on III-V integration: GdOx on InP demonstration

  • Angela Pampillon, Maria
  • Canadilla, Carmina
  • Carlos Feijoo, Pedro
  • San Andres, Enrique
  • del Prado, Alvaro;

Journal Of Vacuum Science And Technology B: Nanotechnology And Microelectronics - 1/1/2013

10.1116/1.4771970 View at source

  • ISSN 21662746

Optimization of in situ plasma oxidation of metallic gadolinium thin films deposited by high pressure sputtering on silicon

  • Angela Pampillon, Maria
  • Carlos Feijoo, Pedro
  • San Andres, Enrique
  • Luisa Lucia, Maria;

Journal Of Vacuum Science And Technology B: Nanotechnology And Microelectronics - 1/1/2013

10.1116/1.4769893 View at source

  • ISSN 21662746

Optimization of gadolinium oxide growth deposited on Si by high pressure sputtering

  • Carlos Feijoo, Pedro
  • Angela Pampillon, Maria
  • San Andres, Enrique;

Journal Of Vacuum Science And Technology B: Nanotechnology And Microelectronics - 1/1/2013

10.1116/1.4766184 View at source

  • ISSN 21662746

Gadolinium scandate by high-pressure sputtering for future generations of high-kappa dielectrics

  • Feijoo, P. C.
  • Pampillon, M. A.
  • Andres, E. San
  • Fierro, J. L. G.;

Semiconductor Science And Technology - 1/8/2013

10.1088/0268-1242/28/8/085004 View at source

  • ISSN 13616641

High-k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors

  • Wirths, Stephan
  • Stange, Daniela
  • Pampillon, Maria-Angela
  • Tiedemann, Andreas T.
  • Mussler, Gregor
  • Fox, Alfred
  • Breuer, Uwe
  • Baert, Bruno
  • San Andres, Enrique
  • Nguyen, Ngoc D.
  • Hartmann, Jean-Michel
  • Ikonic, Zoran
  • Mantl, Siegfried
  • Buca, Dan;
... View more Collapse

Acs Applied Materials & Interfaces (p. 62-67) - 1/1/2015

10.1021/am5075248 View at source

  • ISSN 19448244

Nano-laminate vs. direct deposition of high permittivity gadolinium scandate on silicon by high pressure sputtering

  • Feijoo, P. C.
  • Pampillon, M. A.
  • San Andres, E.
  • Fierro, J. L. G.;

Thin Solid Films (p. 62-66) - 30/10/2015

10.1016/j.tsf.2015.07.045 View at source

  • ISSN 00406090

Scavenging effect on plasma oxidized Gd2O3 grown by high pressure sputtering on Si and InP substrates

  • Pampillon, M. A.
  • Feijoo, P. C.
  • Andres, E. San
  • Garcia, H.
  • Castan, H.
  • Duenas, S.;

Semiconductor Science And Technology - 1/3/2015

10.1088/0268-1242/30/3/035023 View at source

  • ISSN 13616641

This researcher has no books.

Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets Introduction

  • Arce, M. A. P.;

Magnetic Nanoparticles: A Study By Synchrotron Radiation And Rf Transverse Susceptibility (p. 1-20) - 1/1/2017

10.1007/978-3-319-66607-5 View at source

  • ISSN 21905053

Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets Conclusions and Future Work

  • Pampillon Arce, Maria Angela;

Magnetic Nanoparticles: A Study By Synchrotron Radiation And Rf Transverse Susceptibility (p. 155-157) - 1/1/2017

10.1007/978-3-319-66607-5_9 View at source

  • ISSN 21905053

Characterization Techniques

  • Pampillon Arce, Maria Angela;

Magnetic Nanoparticles: A Study By Synchrotron Radiation And Rf Transverse Susceptibility (p. 41-62) - 1/1/2017

10.1007/978-3-319-66607-5_3 View at source

  • ISSN 21905053

Thermal Oxidation of Gd2O3

  • Pampillon Arce, Maria Angela;

Magnetic Nanoparticles: A Study By Synchrotron Radiation And Rf Transverse Susceptibility (p. 63-75) - 1/1/2017

10.1007/978-3-319-66607-5_4 View at source

  • ISSN 21905053

Gadolinium Scandate

  • Pampillon Arce, Maria Angela;

Magnetic Nanoparticles: A Study By Synchrotron Radiation And Rf Transverse Susceptibility (p. 109-124) - 1/1/2017

10.1007/978-3-319-66607-5_6 View at source

  • ISSN 21905053

Interface Scavenging

  • Pampillon Arce, Maria Angela;

Magnetic Nanoparticles: A Study By Synchrotron Radiation And Rf Transverse Susceptibility (p. 125-140) - 1/1/2017

10.1007/978-3-319-66607-5_7 View at source

  • ISSN 21905053

Gd2O3 on InP Substrates

  • Pampillon Arce, Maria Angela;

Magnetic Nanoparticles: A Study By Synchrotron Radiation And Rf Transverse Susceptibility (p. 141-153) - 1/1/2017

10.1007/978-3-319-66607-5_8 View at source

  • ISSN 21905053

Fabrication Techniques

  • Pampillon Arce, Maria Angela;

Magnetic Nanoparticles: A Study By Synchrotron Radiation And Rf Transverse Susceptibility (p. 21-39) - 1/1/2017

10.1007/978-3-319-66607-5_2 View at source

  • ISSN 21905053

Plasma Oxidation of Gd2O3 and Sc2O3

  • Pampillon Arce, Maria Angela;

Magnetic Nanoparticles: A Study By Synchrotron Radiation And Rf Transverse Susceptibility (p. 77-108) - 1/1/2017

10.1007/978-3-319-66607-5_5 View at source

  • ISSN 21905053

Towards metal electrode interface scavenging of rare-earth scandates: A Sc2O3 and Gd2O3 study

  • ANTONIO JOSE BLAZQUEZ FERNANDEZ
  • PEDRO CARLOS FEIJOO GUERRO
  • MARIA LUISA LUCIA MULAS
  • MARIA ANGELA PAMPILLON ARCE
  • ALVARO DEL PRADO MILLAN
  • ENRIQUE SAN ANDRES SERRANO
  • MARIA TOLEDANO LUQUE
... View more Collapse

Microelectronic Engineering (p. 1357-1360) - 1/7/2011

10.1016/j.mee.2011.03.025 View at source

  • ISSN 01679317

Gadolinium Scandate by High Pressure Sputtering as a High-k Dielectric

  • Feijoo, P. C.
  • Pampillon, M. A.
  • Andres, E. San;

Proceedings Of The 2013 Spanish Conference On Electron Devices (Cde 2013) (p. 17-20) - 1/1/2013

  • ISSN 21634971
  • iMarina

Electrical study of ScO-based MIS structures using Al and Ti as gate electrodes

  • Garcia, H.
  • Castan, H.
  • Duenas, S.
  • Bailon, L.
  • Feijoo, P. C.
  • Pampillon, M. A.
  • San Andres, E.;
... View more Collapse

Proceedings Of The 2013 Spanish Conference On Electron Devices (Cde 2013) (p. 285-288) - 1/1/2013

  • ISSN 21634971
  • iMarina

Plasma oxidation of metallic gadolinium deposited on silicon by high pressure sputtering as high permittivity dielectric

  • Pampillon, M. A.
  • Feijoo, P. C.
  • Andres, E. San
  • Fierro, J. L. G.;

Proceedings Of The 2013 Spanish Conference On Electron Devices (Cde 2013) (p. 5-8) - 1/1/2013

  • ISSN 21634971
  • iMarina

Towards high-k integration with III-V channels: interface optimization of high pressure sputtered gadolinium oxide on indium phospide

  • San Andres, E.
  • Pampillon, M. A.
  • Canadilla, C.
  • Feijoo, P. C.
  • del Prado, A.;

Proceedings Of The 2013 Spanish Conference On Electron Devices (Cde 2013) (p. 25-28) - 1/1/2013

  • ISSN 21634971
  • iMarina

Electrical characterization of gadolinium oxide deposited by high pressure sputtering with in situ plasma oxidation

  • Angela Pampillon, Maria
  • Carlos Feijoo, Pedro
  • San Andres, Enrique;

Microelectronic Engineering (p. 236-239) - 25/6/2013

10.1016/j.mee.2013.03.094 View at source

  • ISSN 01679317

High permittivity gadolinium oxide deposited on indium phosphide by high-pressure sputtering without interface treatments

  • San Andres, Enrique
  • Angela Pampillon, Maria
  • Carlos Feijoo, Pedro
  • Perez, Raul
  • Canadilla, Carmina;

Microelectronic Engineering (p. 223-226) - 25/6/2013

10.1016/j.mee.2013.03.133 View at source

  • ISSN 01679317

Growth and Interface Engineering of Highly Strained Low Bandgap Group IV Semiconductors

  • Wirths, S.
  • Pampillon, M. A.
  • San Andres, E.
  • Stange, D.
  • Tiedemann, A. T.
  • Mussler, G.
  • Fox, A.
  • Breuer, U.
  • Hartmann, J-M
  • Mantll, S.
  • Buca, D.;
... View more Collapse

2014 7th International Silicon-Germanium Technology And Device Meeting (Istdm) (p. 13-14) - 1/1/2014

  • iMarina

High pressure sputtering for high-k dielectric deposition. Is it worth trying?

  • San Andres, E.
  • Feijoo, P. C.
  • Pampillon, M. A.
  • Lucia, M. L.
  • del Prado, A.;

Ecs Transactions (p. 27-39) - 11/5/2014

10.1149/06102.0027ecst View at source

  • ISSN 19386737

Thermal stability study of AlGaN/GaN MOS-HEMTs using Gd2O3 as gate dielectric

  • Gao, Z.
  • Romero, M. F.
  • Pampillon, M. A.
  • San Andres, E.
  • Calle, F.;

Proceedings Of The 2013 Spanish Conference On Electron Devices (Cde 2013) (p. 78-+) - 16/4/2015

10.1109/cde.2015.7087508 View at source

  • ISSN 21634971

This researcher has no working papers.

This researcher has no technical reports.

Dispositivos de grafeno para la mejora de las energías renovables

  • RYU CHO, YU KYOUNG (Miembro del equipo de trabajo)
  • BOSCA MOJENA, ALBERTO (Miembro del equipo de trabajo)
  • VELASCO SANTIAGO, ANDRES (Miembro del equipo de trabajo)
  • ROMERO ROJO, FATIMA (Miembro del equipo de trabajo)
  • PAMPILLON ARCE, MARIA ANGELA (Miembro del equipo de trabajo)
  • Martínez Rodrigo, Javier (Investigador principal (IP))
  • Calle Gómez, Fernando (Investigador principal (IP))
  • PEDROS AYALA, JORGE (Participante)
... View more Collapse

Period: 01-01-2018 - 30-09-2021

Type of funding: National

Amount of funding: 166980,00 Euros.

  • iMarina

G4-UPM.Nuevos materiales bidimensionales: caracterización, propiedades y aplicaciones

  • FANDAN, RAJVEER SINGH (Participante)
  • RYU CHO, YU KYOUNG (Participante)
  • Calle Gómez, Fernando (Investigador principal (IP))
  • PAMPILLON ARCE, MARIA ANGELA (Participante)
  • BOSCA MOJENA, ALBERTO (Participante)
  • Martínez Rodrigo, Javier (Participante)
  • Izquierdo López, Raúl (Participante)
  • PEDROS AYALA, JORGE (Participante)
... View more Collapse

Period: 01-01-2019 - 30-04-2023

Type of funding: Regional

Amount of funding: 68902,63 Euros.

  • iMarina

This researcher has no supervised thesis.

This researcher has no patents or software licenses.

Last data update: 3/5/24 7:21 PM