Pampillon Arce, Maria Angela ma.pampillon@upm.es
Actividades
- Artículos 12
- Libros 0
- Capítulos de libro 9
- Congresos 12
- Documentos de trabajo 0
- Informes técnicos 0
- Proyectos de investigación 2
- Tesis dirigidas 0
- Patentes o licencias de software 0
Anomalous thermal oxidation of gadolinium thin films deposited on silicon by high pressure sputtering
- Pampillon, M. A.
- Feijoo, P. C.
- San Andres, E.
- Lucia, M. L.
- del Prado, A.
- Toledano-Luque, M.;
Microelectronic Engineering (p. 2991-2996) - 1/9/2011
10.1016/j.mee.2011.04.058 Ver en origen
- ISSN 01679317
Optimization of scandium oxide growth by high pressure sputtering on silicon
- Feijoo, P. C.
- Pampillon, M. A.
- San Andres, E.
- Lucia, M. L.;
Thin Solid Films (p. 81-86) - 30/12/2012
10.1016/j.tsf.2012.11.008 Ver en origen
- ISSN 00406090
Interface quality of Sc2O3 and Gd2O3 films based metal-insulator-silicon structures using Al, Pt, and Ti gates: Effect of buffer layers and scavenging electrodes
- Gomez, Alfonso
- Castan, Helena
- Garcia, Hector
- Duenas, Salvador
- Bailon, Luis
- Angela Pampillon, Maria
- Carlos Feijoo, Pedro
- San Andres, Enrique;
Journal Of Vacuum Science And Technology B: Nanotechnology And Microelectronics - 1/1/2013
10.1116/1.4768678 Ver en origen
- ISSN 21662746
High pressure sputtering as a viable technique for future high permittivity dielectric on III-V integration: GdOx on InP demonstration
- Angela Pampillon, Maria
- Canadilla, Carmina
- Carlos Feijoo, Pedro
- San Andres, Enrique
- del Prado, Alvaro;
Journal Of Vacuum Science And Technology B: Nanotechnology And Microelectronics - 1/1/2013
10.1116/1.4771970 Ver en origen
- ISSN 21662746
Optimization of in situ plasma oxidation of metallic gadolinium thin films deposited by high pressure sputtering on silicon
- Angela Pampillon, Maria
- Carlos Feijoo, Pedro
- San Andres, Enrique
- Luisa Lucia, Maria;
Journal Of Vacuum Science And Technology B: Nanotechnology And Microelectronics - 1/1/2013
10.1116/1.4769893 Ver en origen
- ISSN 21662746
Optimization of gadolinium oxide growth deposited on Si by high pressure sputtering
- Carlos Feijoo, Pedro
- Angela Pampillon, Maria
- San Andres, Enrique;
Journal Of Vacuum Science And Technology B: Nanotechnology And Microelectronics - 1/1/2013
10.1116/1.4766184 Ver en origen
- ISSN 21662746
Gadolinium scandate by high-pressure sputtering for future generations of high-kappa dielectrics
- Feijoo, P. C.
- Pampillon, M. A.
- Andres, E. San
- Fierro, J. L. G.;
Semiconductor Science And Technology - 1/8/2013
10.1088/0268-1242/28/8/085004 Ver en origen
- ISSN 13616641
High-k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors
- Wirths, Stephan
- Stange, Daniela
- Pampillon, Maria-Angela
- Tiedemann, Andreas T.
- Mussler, Gregor
- Fox, Alfred
- Breuer, Uwe
- Baert, Bruno
- San Andres, Enrique
- Nguyen, Ngoc D.
- Hartmann, Jean-Michel
- Ikonic, Zoran
- Mantl, Siegfried
- Buca, Dan;
Acs Applied Materials & Interfaces (p. 62-67) - 1/1/2015
10.1021/am5075248 Ver en origen
- ISSN 19448244
Nano-laminate vs. direct deposition of high permittivity gadolinium scandate on silicon by high pressure sputtering
- Feijoo, P. C.
- Pampillon, M. A.
- San Andres, E.
- Fierro, J. L. G.;
Thin Solid Films (p. 62-66) - 30/10/2015
10.1016/j.tsf.2015.07.045 Ver en origen
- ISSN 00406090
Scavenging effect on plasma oxidized Gd2O3 grown by high pressure sputtering on Si and InP substrates
- Pampillon, M. A.
- Feijoo, P. C.
- Andres, E. San
- Garcia, H.
- Castan, H.
- Duenas, S.;
Semiconductor Science And Technology - 1/3/2015
10.1088/0268-1242/30/3/035023 Ver en origen
- ISSN 13616641
Este/a investigador/a no tiene libros.
Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets Introduction
- Arce, M. A. P.;
Magnetic Nanoparticles: A Study By Synchrotron Radiation And Rf Transverse Susceptibility (p. 1-20) - 1/1/2017
10.1007/978-3-319-66607-5 Ver en origen
- ISSN 21905053
Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets Conclusions and Future Work
- Pampillon Arce, Maria Angela;
Magnetic Nanoparticles: A Study By Synchrotron Radiation And Rf Transverse Susceptibility (p. 155-157) - 1/1/2017
10.1007/978-3-319-66607-5_9 Ver en origen
- ISSN 21905053
Characterization Techniques
- Pampillon Arce, Maria Angela;
Magnetic Nanoparticles: A Study By Synchrotron Radiation And Rf Transverse Susceptibility (p. 41-62) - 1/1/2017
10.1007/978-3-319-66607-5_3 Ver en origen
- ISSN 21905053
Thermal Oxidation of Gd2O3
- Pampillon Arce, Maria Angela;
Magnetic Nanoparticles: A Study By Synchrotron Radiation And Rf Transverse Susceptibility (p. 63-75) - 1/1/2017
10.1007/978-3-319-66607-5_4 Ver en origen
- ISSN 21905053
Gadolinium Scandate
- Pampillon Arce, Maria Angela;
Magnetic Nanoparticles: A Study By Synchrotron Radiation And Rf Transverse Susceptibility (p. 109-124) - 1/1/2017
10.1007/978-3-319-66607-5_6 Ver en origen
- ISSN 21905053
Interface Scavenging
- Pampillon Arce, Maria Angela;
Magnetic Nanoparticles: A Study By Synchrotron Radiation And Rf Transverse Susceptibility (p. 125-140) - 1/1/2017
10.1007/978-3-319-66607-5_7 Ver en origen
- ISSN 21905053
Gd2O3 on InP Substrates
- Pampillon Arce, Maria Angela;
Magnetic Nanoparticles: A Study By Synchrotron Radiation And Rf Transverse Susceptibility (p. 141-153) - 1/1/2017
10.1007/978-3-319-66607-5_8 Ver en origen
- ISSN 21905053
Fabrication Techniques
- Pampillon Arce, Maria Angela;
Magnetic Nanoparticles: A Study By Synchrotron Radiation And Rf Transverse Susceptibility (p. 21-39) - 1/1/2017
10.1007/978-3-319-66607-5_2 Ver en origen
- ISSN 21905053
Plasma Oxidation of Gd2O3 and Sc2O3
- Pampillon Arce, Maria Angela;
Magnetic Nanoparticles: A Study By Synchrotron Radiation And Rf Transverse Susceptibility (p. 77-108) - 1/1/2017
10.1007/978-3-319-66607-5_5 Ver en origen
- ISSN 21905053
Towards metal electrode interface scavenging of rare-earth scandates: A Sc2O3 and Gd2O3 study
- ANTONIO JOSE BLAZQUEZ FERNANDEZ
- PEDRO CARLOS FEIJOO GUERRO
- MARIA LUISA LUCIA MULAS
- MARIA ANGELA PAMPILLON ARCE
- ALVARO DEL PRADO MILLAN
- ENRIQUE SAN ANDRES SERRANO
- MARIA TOLEDANO LUQUE
Microelectronic Engineering (p. 1357-1360) - 1/7/2011
10.1016/j.mee.2011.03.025 Ver en origen
- ISSN 01679317
- iMarina
- iMarina
Gadolinium Scandate by High Pressure Sputtering as a High-k Dielectric
- Feijoo, P. C.
- Pampillon, M. A.
- Andres, E. San;
Proceedings Of The 2013 Spanish Conference On Electron Devices (Cde 2013) (p. 17-20) - 1/1/2013
- ISSN 21634971
- iMarina
Electrical study of ScO-based MIS structures using Al and Ti as gate electrodes
- Garcia, H.
- Castan, H.
- Duenas, S.
- Bailon, L.
- Feijoo, P. C.
- Pampillon, M. A.
- San Andres, E.;
Proceedings Of The 2013 Spanish Conference On Electron Devices (Cde 2013) (p. 285-288) - 1/1/2013
- ISSN 21634971
- iMarina
Plasma oxidation of metallic gadolinium deposited on silicon by high pressure sputtering as high permittivity dielectric
- Pampillon, M. A.
- Feijoo, P. C.
- Andres, E. San
- Fierro, J. L. G.;
Proceedings Of The 2013 Spanish Conference On Electron Devices (Cde 2013) (p. 5-8) - 1/1/2013
- ISSN 21634971
- iMarina
Towards high-k integration with III-V channels: interface optimization of high pressure sputtered gadolinium oxide on indium phospide
- San Andres, E.
- Pampillon, M. A.
- Canadilla, C.
- Feijoo, P. C.
- del Prado, A.;
Proceedings Of The 2013 Spanish Conference On Electron Devices (Cde 2013) (p. 25-28) - 1/1/2013
- ISSN 21634971
- iMarina
Electrical characterization of gadolinium oxide deposited by high pressure sputtering with in situ plasma oxidation
- Angela Pampillon, Maria
- Carlos Feijoo, Pedro
- San Andres, Enrique;
Microelectronic Engineering (p. 236-239) - 25/6/2013
10.1016/j.mee.2013.03.094 Ver en origen
- ISSN 01679317
- iMarina
- iMarina
High permittivity gadolinium oxide deposited on indium phosphide by high-pressure sputtering without interface treatments
- San Andres, Enrique
- Angela Pampillon, Maria
- Carlos Feijoo, Pedro
- Perez, Raul
- Canadilla, Carmina;
Microelectronic Engineering (p. 223-226) - 25/6/2013
10.1016/j.mee.2013.03.133 Ver en origen
- ISSN 01679317
- iMarina
- iMarina
Growth and Interface Engineering of Highly Strained Low Bandgap Group IV Semiconductors
- Wirths, S.
- Pampillon, M. A.
- San Andres, E.
- Stange, D.
- Tiedemann, A. T.
- Mussler, G.
- Fox, A.
- Breuer, U.
- Hartmann, J-M
- Mantll, S.
- Buca, D.;
2014 7th International Silicon-Germanium Technology And Device Meeting (Istdm) (p. 13-14) - 1/1/2014
- iMarina
High pressure sputtering for high-k dielectric deposition. Is it worth trying?
- San Andres, E.
- Feijoo, P. C.
- Pampillon, M. A.
- Lucia, M. L.
- del Prado, A.;
Ecs Transactions (p. 27-39) - 11/5/2014
10.1149/06102.0027ecst Ver en origen
- ISSN 19386737
- iMarina
- iMarina
Thermal stability study of AlGaN/GaN MOS-HEMTs using Gd2O3 as gate dielectric
- Gao, Z.
- Romero, M. F.
- Pampillon, M. A.
- San Andres, E.
- Calle, F.;
Proceedings Of The 2013 Spanish Conference On Electron Devices (Cde 2013) (p. 78-+) - 16/4/2015
10.1109/cde.2015.7087508 Ver en origen
- ISSN 21634971
Este/a investigador/a no tiene documentos de trabajo.
Este/a investigador/a no tiene informes técnicos.
Dispositivos de grafeno para la mejora de las energías renovables
- RYU CHO, YU KYOUNG (Miembro del equipo de trabajo)
- BOSCA MOJENA, ALBERTO (Miembro del equipo de trabajo)
- VELASCO SANTIAGO, ANDRES (Miembro del equipo de trabajo)
- ROMERO ROJO, FATIMA (Miembro del equipo de trabajo)
- PAMPILLON ARCE, MARIA ANGELA (Miembro del equipo de trabajo)
- Martínez Rodrigo, Javier (Investigador principal (IP))
- Calle Gómez, Fernando (Investigador principal (IP))
- PEDROS AYALA, JORGE (Participante)
Ejecución: 01-01-2018 - 30-09-2021
Tipo: Nacional
Importe financiado: 166980,00 Euros.
- iMarina
G4-UPM.Nuevos materiales bidimensionales: caracterización, propiedades y aplicaciones
- FANDAN, RAJVEER SINGH (Participante)
- RYU CHO, YU KYOUNG (Participante)
- Calle Gómez, Fernando (Investigador principal (IP))
- PAMPILLON ARCE, MARIA ANGELA (Participante)
- BOSCA MOJENA, ALBERTO (Participante)
- Martínez Rodrigo, Javier (Participante)
- Izquierdo López, Raúl (Participante)
- PEDROS AYALA, JORGE (Participante)
Ejecución: 01-01-2019 - 30-04-2023
Tipo: Regional
Importe financiado: 68902,63 Euros.
- iMarina
Este/a investigador/a no tiene tesis dirigidas.
Este/a investigador/a no tiene patentes o licencias de software.
Perfiles de investigador/a
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