2D pn junctions driven out-of-equilibrium

Nanoscale Advances (p. 3252-3262) - 1/8/2020

10.1039/d0na00267d Ver en origen

• ISSN 25160230

• iMarina

An Extraction Method for Mobility Degradation and Contact Resistance of Graphene Transistors

Ieee Transactions On Electron Devices (p. 4037-4041) - 1/7/2022

10.1109/ted.2022.3176830 Ver en origen

• ISSN 00189383

• iMarina

Anomalous thermal oxidation of gadolinium thin films deposited on silicon by high pressure sputtering

Microelectronic Engineering (p. 2991-2996) - 1/9/2011

10.1016/j.mee.2011.04.058 Ver en origen

• ISSN 01679317

• iMarina

Compact Modeling Technology for the Simulation of Integrated Circuits Based on Graphene Field-Effect Transistors

Advanced Materials - 1/12/2022

10.1002/adma.202201691 Ver en origen

• ISSN 09359648

• iMarina

Contact resistance extraction of graphene FET technologies based on individual device characterization

Solid-State Electronics - 1/10/2020

10.1016/j.sse.2020.107882 Ver en origen

• ISSN 00381101

• iMarina

Does carrier velocity saturation help to enhance: F maxin graphene field-effect transistors?

Nanoscale Advances (p. 4179-4186) - 1/9/2020

10.1039/c9na00733d Ver en origen

• ISSN 25160230

• iMarina

Electrical characterization of high-pressure reactive sputtered ScO x films on silicon

Thin Solid Films (p. 2268-2272) - 31/1/2011

10.1016/j.tsf.2010.10.073 Ver en origen

• ISSN 00406090

• iMarina
• iMarina

Experimental Observation and Modeling of the Impact of Traps on Static and Analog/HF Performance of Graphene Transistors

Ieee Transactions On Electron Devices (p. 5790-5796) - 1/12/2020

10.1109/ted.2020.3029542 Ver en origen

• ISSN 00189383

• iMarina

Gadolinium scandate by high-pressure sputtering for future generations of high-kappa dielectrics

Semiconductor Science And Technology - 1/8/2013

10.1088/0268-1242/28/8/085004 Ver en origen

• ISSN 13616641

• iMarina

High pressure sputtering as a viable technique for future high permittivity dielectric on III-V integration: GdOx on InP demonstration

Journal Of Vacuum Science And Technology B: Nanotechnology And Microelectronics - 1/1/2013

10.1116/1.4771970 Ver en origen

• ISSN 21662746

• iMarina

A Drift-Diffusion Graphene Field Effect Transistor model to study scaling effects on High Frequency performance

19/4/2016

• iMarina

Analysis of traps-related effects hindering GFETs performance

Proceedings Of The 2021 13th Spanish Conference On Electron Devices, Cde 2021 (p. 78-81) - 9/6/2021

10.1109/cde52135.2021.9455722 Ver en origen

• iMarina
• iMarina

Channel Length Scaling of Graphene Field-Effect Transistors targeting Radio Frequency Applications

10/3/2015

• iMarina

Drain current saturation in graphene field-effect transistors at high fields

10/9/2018

• iMarina

Electrical and chemical characterization of high pressure sputtered scandium oxide for memory applications

Proceedings Of The 8th Spanish Conference On Electron Devices, Cde'2011 - 12/5/2011

10.1109/sced.2011.5744185 Ver en origen

• iMarina
• iMarina

Electrical characterization of gadolinium oxide deposited by high pressure sputtering with in situ plasma oxidation

Microelectronic Engineering (p. 236-239) - 25/6/2013

10.1016/j.mee.2013.03.094 Ver en origen

• ISSN 01679317

• iMarina
• iMarina

Electrical characterization of high-pressure reactive sputtered Sc 2O3 films on silicon

Ecs Transactions (p. 287-297) - 1/1/2010

10.1149/1.3375614 Ver en origen

• ISSN 19386737

• iMarina

Electrical study of ScO-based MIS structures using Al and Ti as gate electrodes

9th Spanish Conference On Electron Devices, Cde 2013 (p. 285-288) - 8/4/2013

10.1109/cde.2013.6481398 Ver en origen

• ISSN 9781467346689

• iMarina
• iMarina

Electrical study of ScO-based MIS structures using Al and Ti as gate electrodes

Proceedings Of The 2013 Spanish Conference On Electron Devices (Cde 2013) (p. 285-288) - 1/1/2013

• ISSN 21634971

• iMarina

Electrically and Chemically Doped 2D lateral pn junctions: Equilibrium and out-of-the equilibrium properties

9/6/2021

• iMarina

Dispositivos electrónicos de baja dimensionalidad para aplicaciones de radiofrecuencia y digitales: simulación y desarrollo de software

Ejecución: 01-01-2013 - 31-12-2015

Tipo: Nacional

Importe financiado: 123201,00 Euros.

• iMarina

Fabricación de dispositivos de efecto campo con dieléctrico de alta permitividad sobre Si y semiconductores III-V para el nodo de 22 nm

Ejecución: 01-01-2011 - 31-12-2013

Tipo: Nacional

Importe financiado: 213444,00 Euros.

• iMarina

Graphene-Based Disruptive Technologies (Graphene Core 2)

Ejecución: 01-04-2018 - 31-03-2020

Importe financiado: 400000,00 Euros.

• iMarina

Graphene-Based Disruptive Technologies (Graphene Core 3)

Ejecución: 01-04-2020 - 31-03-2023

Importe financiado: 490000,00 Euros.

• iMarina

Graphene-Based Revolutions in ICT And Beyond

Ejecución: 01-10-2013 - 31-12-2015

Importe financiado: 475618,00 Euros.

• iMarina

Graphene-based disruptive technologies (Grephane Core 1)

Ejecución: 01-01-2016 - 31-12-2018

Importe financiado: 490000,00 Euros.

• iMarina

Grup de Recerca Consolidat

Ejecución: 01-01-2014 - 31-12-2018

Importe financiado: 30000,00 Euros.

• iMarina

Medida a temperatura variable de estructuras de puerta de transistores con dieléctricos de alta permitividad

Ejecución: 01-01-2008 - 31-12-2008

• iMarina

Nueva generación de dieléctricos de alta permitividad para su aplicación en la puerta de transistores de utilidad en radiofrecuencia

Ejecución: 01-01-2007 - 31-12-2010

• iMarina

Nuevas dinámicas de electrones y fonones para nanotecnologías emergentes: Aplicación a heteroestructuras 2D van der Waals y dispositivos de THz

Ejecución: 01-01-2019 - 31-12-2021

Tipo: Nacional

Importe financiado: 97647,00 Euros.

• iMarina