Nitridation of Si by N2 electron cyclotron resonance plasma and integration with ScOx deposition

Journal Of The Electrochemical Society - 26/3/2010

10.1149/1.3301726 View at source

• ISSN 00134651

• iMarina

Scandium oxide deposited by high-pressure sputtering for memory devices: Physical and interfacial properties

Journal Of Applied Physics - 15/4/2010

10.1063/1.3354096 View at source

• ISSN 00218979

• iMarina

Electrical characterization of high-pressure reactive sputtered ScO x films on silicon

Thin Solid Films (p. 2268-2272) - 31/1/2011

10.1016/j.tsf.2010.10.073 View at source

• ISSN 00406090

• iMarina
• iMarina

Anomalous thermal oxidation of gadolinium thin films deposited on silicon by high pressure sputtering

Microelectronic Engineering (p. 2991-2996) - 1/9/2011

10.1016/j.mee.2011.04.058 View at source

• ISSN 01679317

• iMarina

Optimization of scandium oxide growth by high pressure sputtering on silicon

Thin Solid Films (p. 81-86) - 30/12/2012

10.1016/j.tsf.2012.11.008 View at source

• ISSN 00406090

• iMarina

Time-dependent dielectric breakdown on subnanometer EOT nMOS FinFETs

Ieee Transactions On Device And Materials Reliability (p. 166-170) - 1/3/2012

10.1109/tdmr.2011.2180387 View at source

• ISSN 15304388

• iMarina

Interface quality of Sc2O3 and Gd2O3 films based metal-insulator-silicon structures using Al, Pt, and Ti gates: Effect of buffer layers and scavenging electrodes

Journal Of Vacuum Science And Technology B: Nanotechnology And Microelectronics - 1/1/2013

10.1116/1.4768678 View at source

• ISSN 21662746

• iMarina

High pressure sputtering as a viable technique for future high permittivity dielectric on III-V integration: GdOx on InP demonstration

Journal Of Vacuum Science And Technology B: Nanotechnology And Microelectronics - 1/1/2013

10.1116/1.4771970 View at source

• ISSN 21662746

• iMarina

Optimization of in situ plasma oxidation of metallic gadolinium thin films deposited by high pressure sputtering on silicon

Journal Of Vacuum Science And Technology B: Nanotechnology And Microelectronics - 1/1/2013

10.1116/1.4769893 View at source

• ISSN 21662746

• iMarina

Optimization of gadolinium oxide growth deposited on Si by high pressure sputtering

Journal Of Vacuum Science And Technology B: Nanotechnology And Microelectronics - 1/1/2013

10.1116/1.4766184 View at source

• ISSN 21662746

• iMarina

Growth of silicon nitride on silicon by electron cyclotron resonance plasma nitridation

Proceedings Of The 2009 Spanish Conference On Electron Devices, Cde'09 (p. 16-18) - 24/4/2009

10.1109/sced.2009.4800418 View at source

• iMarina
• iMarina

Interfacial properties of HfO2/SiN/Si gate structures

Proceedings Of The 2009 Spanish Conference On Electron Devices, Cde'09 (p. 23-26) - 24/4/2009

10.1109/sced.2009.4800420 View at source

• iMarina
• iMarina

Electrical characterization of high-pressure reactive sputtered Sc 2O3 films on silicon

Ecs Transactions (p. 287-297) - 1/1/2010

10.1149/1.3375614 View at source

• ISSN 19386737

• iMarina

Growth of Gadolinium Oxide by Thermal Oxidation of Thin Metallic Gadolinium Layers

17/3/2010

• iMarina

Positive bias temperature instabilities on sub-nanometere EOT FinFETs

Microelectronics Reliability (p. 1521-1524) - 3/10/2011

10.1016/j.microrel.2011.06.014 View at source

• ISSN 00262714

• iMarina
• iMarina

Interface engineering by metal electrode scavenging of Gd2O 3 films sputtered on Si

Proceedings Of The 8th Spanish Conference On Electron Devices, Cde'2011 - 12/5/2011

10.1109/sced.2011.5744216 View at source

• iMarina
• iMarina

Electrical and chemical characterization of high pressure sputtered scandium oxide for memory applications

Proceedings Of The 8th Spanish Conference On Electron Devices, Cde'2011 - 12/5/2011

10.1109/sced.2011.5744185 View at source

• iMarina
• iMarina

Towards metal electrode interface scavenging of rare-earth scandates: A Sc2O3 and Gd2O3 study

Microelectronic Engineering (p. 1357-1360) - 1/7/2011

10.1016/j.mee.2011.03.025 View at source

• ISSN 01679317

• iMarina
• iMarina

Optimization of Gadolinium Oxide Growth Deposited by High Pressure Sputtering through Scavenging Techniques

25/6/2012

• iMarina

High pressure sputtering as a viable technique for future high k on III-V integration: Gd2O3 on InP demonstration.

25/6/2012

• iMarina

Nueva generación de dieléctricos de alta permitividad para su aplicación en la puerta de transistores de utilidad en radiofrecuencia

Period: 01-01-2007 - 31-12-2010

• iMarina

Medida a temperatura variable de estructuras de puerta de transistores con dieléctricos de alta permitividad

Period: 01-01-2008 - 31-12-2008

• iMarina

Fabricación de dispositivos de efecto campo con dieléctrico de alta permitividad sobre Si y semiconductores III-V para el nodo de 22 nm

Period: 01-01-2011 - 31-12-2013

Type of funding: National

Amount of funding: 213444,00 Euros.

• iMarina

Dispositivos electrónicos de baja dimensionalidad para aplicaciones de radiofrecuencia y digitales: simulación y desarrollo de software

Period: 01-01-2013 - 31-12-2015

Type of funding: National

Amount of funding: 123201,00 Euros.

• iMarina

Graphene-Based Revolutions in ICT And Beyond

Period: 01-10-2013 - 31-12-2015

Amount of funding: 475618,00 Euros.

• iMarina

Grup de Recerca Consolidat

Period: 01-01-2014 - 31-12-2018

Amount of funding: 30000,00 Euros.

• iMarina

Transporte de electrones y fonones en nanodispositivos para aplicaciones de bajo y cero consumo (ELEPHONT)

Period: 01-01-2016 - 31-12-2018

Type of funding: National

Amount of funding: 116900,00 Euros.

• iMarina

Graphene-based disruptive technologies (Grephane Core 1)

Period: 01-01-2016 - 31-12-2018

Amount of funding: 490000,00 Euros.

• iMarina

Graphene-Based Disruptive Technologies (Graphene Core 2)

Period: 01-04-2018 - 31-03-2020

Amount of funding: 400000,00 Euros.

• iMarina

RIS3CAT – Comunitats Emergents

Period: 01-06-2018 - 30-06-2021

Amount of funding: 175000,00 Euros.

• iMarina