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Feijoo Guerro, Pedro Carlos pc.feijoo@upm.es

MATEMÁTICA APLICADA A LA INGENIERÍA INDUSTRIAL / Universidad Politécnica de Madrid

Publications

Nitridation of Si by N2 electron cyclotron resonance plasma and integration with ScOx deposition

  • Feijoo P
  • Del Prado A
  • Toledano-Luque M
  • San Andŕs E
  • Lucía M

Journal Of The Electrochemical Society - 26/3/2010

10.1149/1.3301726 View at source

  • ISSN 00134651

Scandium oxide deposited by high-pressure sputtering for memory devices: Physical and interfacial properties

  • Feijoo P
  • Del Prado A
  • Toledano-Luque M
  • San Andŕs E
  • Lucía M

Journal Of Applied Physics - 15/4/2010

10.1063/1.3354096 View at source

  • ISSN 00218979

Electrical characterization of high-pressure reactive sputtered ScO x films on silicon

  • LUIS BAILON
  • HELENA CASTAN
  • SALVADOR DUEÑAS
  • PEDRO CARLOS FEIJOO GUERRO
  • HECTOR GARCIA
  • ALFONSO GOMEZ
  • MARIA LUISA LUCIA MULAS
  • ALVARO DEL PRADO MILLAN
  • ENRIQUE SAN ANDRES SERRANO
  • MARIA TOLEDANO LUQUE
... View more Collapse

Thin Solid Films (p. 2268-2272) - 31/1/2011

10.1016/j.tsf.2010.10.073 View at source

  • ISSN 00406090

Anomalous thermal oxidation of gadolinium thin films deposited on silicon by high pressure sputtering

  • Pampillon, M. A.
  • Feijoo, P. C.
  • San Andres, E.
  • Lucia, M. L.
  • del Prado, A.
  • Toledano-Luque, M.;

Microelectronic Engineering (p. 2991-2996) - 1/9/2011

10.1016/j.mee.2011.04.058 View at source

  • ISSN 01679317

Optimization of scandium oxide growth by high pressure sputtering on silicon

  • Feijoo, P. C.
  • Pampillon, M. A.
  • San Andres, E.
  • Lucia, M. L.;

Thin Solid Films (p. 81-86) - 30/12/2012

10.1016/j.tsf.2012.11.008 View at source

  • ISSN 00406090

Time-dependent dielectric breakdown on subnanometer EOT nMOS FinFETs

  • Feijoo P
  • Kauerauf T
  • Toledano-Luque M
  • Togo M
  • San Andrés E
  • Groeseneken G

Ieee Transactions On Device And Materials Reliability (p. 166-170) - 1/3/2012

10.1109/tdmr.2011.2180387 View at source

  • ISSN 15304388

Interface quality of Sc2O3 and Gd2O3 films based metal-insulator-silicon structures using Al, Pt, and Ti gates: Effect of buffer layers and scavenging electrodes

  • Gomez, Alfonso
  • Castan, Helena
  • Garcia, Hector
  • Duenas, Salvador
  • Bailon, Luis
  • Angela Pampillon, Maria
  • Carlos Feijoo, Pedro
  • San Andres, Enrique;
... View more Collapse

Journal Of Vacuum Science And Technology B: Nanotechnology And Microelectronics - 1/1/2013

10.1116/1.4768678 View at source

  • ISSN 21662746

High pressure sputtering as a viable technique for future high permittivity dielectric on III-V integration: GdOx on InP demonstration

  • Angela Pampillon, Maria
  • Canadilla, Carmina
  • Carlos Feijoo, Pedro
  • San Andres, Enrique
  • del Prado, Alvaro;

Journal Of Vacuum Science And Technology B: Nanotechnology And Microelectronics - 1/1/2013

10.1116/1.4771970 View at source

  • ISSN 21662746

Optimization of in situ plasma oxidation of metallic gadolinium thin films deposited by high pressure sputtering on silicon

  • Angela Pampillon, Maria
  • Carlos Feijoo, Pedro
  • San Andres, Enrique
  • Luisa Lucia, Maria;

Journal Of Vacuum Science And Technology B: Nanotechnology And Microelectronics - 1/1/2013

10.1116/1.4769893 View at source

  • ISSN 21662746

Optimization of gadolinium oxide growth deposited on Si by high pressure sputtering

  • Carlos Feijoo, Pedro
  • Angela Pampillon, Maria
  • San Andres, Enrique;

Journal Of Vacuum Science And Technology B: Nanotechnology And Microelectronics - 1/1/2013

10.1116/1.4766184 View at source

  • ISSN 21662746

This researcher has no books.

This researcher has no book chapters.

Electrical characterization of gadolinium oxide deposited by high pressure sputtering with in situ plasma oxidation

  • Angela Pampillon, Maria
  • Carlos Feijoo, Pedro
  • San Andres, Enrique;

Microelectronic Engineering (p. 236-239) - 25/6/2013

10.1016/j.mee.2013.03.094 View at source

  • ISSN 01679317

High permittivity gadolinium oxide deposited on indium phosphide by high-pressure sputtering without interface treatments

  • San Andres, Enrique
  • Angela Pampillon, Maria
  • Carlos Feijoo, Pedro
  • Perez, Raul
  • Canadilla, Carmina;

Microelectronic Engineering (p. 223-226) - 25/6/2013

10.1016/j.mee.2013.03.133 View at source

  • ISSN 01679317

High pressure sputtering for high-k dielectric deposition. Is it worth trying?

  • San Andres, E.
  • Feijoo, P. C.
  • Pampillon, M. A.
  • Lucia, M. L.
  • del Prado, A.;

Ecs Transactions (p. 27-39) - 11/5/2014

10.1149/06102.0027ecst View at source

  • ISSN 19386737

Nano-laminate vs direct deposition on silicon of high permittivity gadolinium scandate by high pressure sputtering

  • Pedro Carlos Feijoo Guerro
  • María Ángela Pampillón Arce
  • Enrique San Andrés Serrano

9/6/2014

  • iMarina

Scavenging effect on plasma oxidized GdO3 grown by high pressure sputtering on Si and InP substrates

  • María Ángela Pampillón Arce
  • Pedro Carlos Feijoo Guerro
  • Enrique San Andrés Serrano

9/6/2014

  • iMarina

Short Channel Effects in Graphene Field-Effect Transistors

  • Pedro Carlos Feijoo Guerro
  • David Jiménez Jiménez

11/2/2015

  • iMarina

Channel Length Scaling of Graphene Field-Effect Transistors targeting Radio Frequency Applications

  • Pedro Carlos Feijoo Guerro
  • Xavier Cartoixà Soler
  • David Jiménez Jiménez

10/3/2015

  • iMarina

A Drift-Diffusion Graphene Field Effect Transistor model to study scaling effects on High Frequency performance

  • Pedro C Feijoo Guerro
  • David Jiménez Jiménez
  • Xavier Cartoixà

19/4/2016

  • iMarina

Radio frequency performance and stability of transistors based on hBN encapsulated graphene

  • David Jiménez Jiménez
  • Raúl Rengel
  • María José Martín
  • José Manuel Iglesias
  • Francisco Pasadas Cantos
  • Pedro Carlos Feijoo Guerro

18/10/2017

  • iMarina

Impact of scattering mechanisms and dimensions scaling on Graphene Field-Effect transistors

  • PC Feijoo
  • F Pasadas
  • JM Iglesias
  • MJ Martín
  • R Rengel
  • D Jiménez

8/2/2017

  • iMarina

This researcher has no working papers.

This researcher has no technical reports.

Nueva generación de dieléctricos de alta permitividad para su aplicación en la puerta de transistores de utilidad en radiofrecuencia

  • Ignacio Mártil de la Plaza (Investigador principal (IP))
  • FEIJOO GUERRO, PEDRO CARLOS (Investigador/a)

Period: 01-01-2007 - 31-12-2010

  • iMarina

Medida a temperatura variable de estructuras de puerta de transistores con dieléctricos de alta permitividad

  • Germán González Díaz (Investigador principal (IP))
  • FEIJOO GUERRO, PEDRO CARLOS (Investigador/a)

Period: 01-01-2008 - 31-12-2008

  • iMarina

Fabricación de dispositivos de efecto campo con dieléctrico de alta permitividad sobre Si y semiconductores III-V para el nodo de 22 nm

  • ENRIQUE SAN ANDRES SERRANO (Investigador principal (IP))
  • FEIJOO GUERRO, PEDRO CARLOS (Investigador/a)

Period: 01-01-2011 - 31-12-2013

Type of funding: National

Amount of funding: 213444,00 Euros.

  • iMarina

Dispositivos electrónicos de baja dimensionalidad para aplicaciones de radiofrecuencia y digitales: simulación y desarrollo de software

  • Xavier Oriols (Investigador principal (IP))
  • FEIJOO GUERRO, PEDRO CARLOS (Investigador/a)

Period: 01-01-2013 - 31-12-2015

Type of funding: National

Amount of funding: 123201,00 Euros.

  • iMarina

Graphene-Based Revolutions in ICT And Beyond

  • David Jiménez Jiménez (Investigador principal (IP))
  • FEIJOO GUERRO, PEDRO CARLOS (Investigador/a)

Period: 01-10-2013 - 31-12-2015

Amount of funding: 475618,00 Euros.

  • iMarina

Grup de Recerca Consolidat

  • Xavier Aymerich (Investigador principal (IP))
  • FEIJOO GUERRO, PEDRO CARLOS (Investigador/a)

Period: 01-01-2014 - 31-12-2018

Amount of funding: 30000,00 Euros.

  • iMarina

Transporte de electrones y fonones en nanodispositivos para aplicaciones de bajo y cero consumo (ELEPHONT)

  • Xavier Cartoixà Soler
  • Xavier Oriols Pladevall (Investigador principal (IP))
  • FEIJOO GUERRO, PEDRO CARLOS (Investigador/a)

Period: 01-01-2016 - 31-12-2018

Type of funding: National

Amount of funding: 116900,00 Euros.

  • iMarina

Graphene-based disruptive technologies (Grephane Core 1)

  • David Jiménez Jiménez (Investigador principal (IP))
  • FEIJOO GUERRO, PEDRO CARLOS (Investigador/a)

Period: 01-01-2016 - 31-12-2018

Amount of funding: 490000,00 Euros.

  • iMarina

Graphene-Based Disruptive Technologies (Graphene Core 2)

  • David Jiménez Jiménez (Investigador principal (IP))
  • FEIJOO GUERRO, PEDRO CARLOS (Investigador/a)

Period: 01-04-2018 - 31-03-2020

Amount of funding: 400000,00 Euros.

  • iMarina

RIS3CAT – Comunitats Emergents

  • David Jiménez Jiménez (Investigador principal (IP))
  • FEIJOO GUERRO, PEDRO CARLOS (Investigador/a)

Period: 01-06-2018 - 30-06-2021

Amount of funding: 175000,00 Euros.

  • iMarina

This researcher has no supervised thesis.

This researcher has no patents or software licenses.

Last data update: 3/5/24 7:21 PM