Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves

Aip Advances - 1/9/2015

10.1063/1.4932147 View at source

• ISSN 21583226

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Theoretical maximum photogeneration efficiency and performance characterization of InxGa1-xN/Si tandem water-splitting photoelectrodes

Apl Materials - 1/7/2020

10.1063/5.0007034 View at source

• ISSN 2166532X

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A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy

Applied Physics Letters - 21/11/2008

10.1063/1.3026541 View at source

• ISSN 00036951

• iMarina
• iMarina

Improving optical performance of GaN nanowires grown by selective area growth homoepitaxy: Influence of substrate and nanowire dimensions

Applied Physics Letters - 20/6/2016

10.1063/1.4954742 View at source

• ISSN 00036951

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A top-gate GaN nanowire metal-semiconductor field effect transistor with improved channel electrostatic control

Applied Physics Letters (p. 033101-033101) - 18/1/2016

10.1063/1.4940197 View at source

• ISSN 00036951

• iMarina
• iMarina

High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy

Applied Physics Letters - 18/7/2011

10.1063/1.3614434 View at source

• ISSN 00036951

• iMarina

Growth interruption strategies for interface optimization in GaAsSb/GaAsN type-II superlattices

Applied Surface Science - 1/1/2022

10.1016/j.apsusc.2022.154596 View at source

• ISSN 01694332

• iMarina

Blue-to-green single photons from InGaN/GaN dot-in-a-nanowire ordered arrays

Epl - 1/7/2015

10.1209/0295-5075/111/24001 View at source

• ISSN 02955075

• iMarina

(S)TEM methods contributions to improve the fabrication of InGaN thin films on Si, and InN nanostructures on flat Si and rough InGaN

Journal Of Alloys And Compounds (p. 697-708) - 30/4/2019

10.1016/j.jallcom.2018.12.319 View at source

• ISSN 09258388

• iMarina

Crystallographically uniform arrays of ordered (In)GaN nanocolumns

Journal Of Applied Physics - 1/1/2015

10.1063/1.4905951 View at source

• ISSN 00218979

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Constituent blocks of planar III-Nitride microcavities grown by molecular beam epitaxy

1/1/2012

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The impact of alloyed capping layers on the performance of INAS/GAAS quantum dot solar cells

Advances In Energy Research (p. 83-122) - 1/1/2017

• ISSN 22876316

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Ga(in)N nanowires grown by molecular beam epitaxy: From quantum light emitters to nanotransistors

Novel Compound Semiconductor Nanowires: Materials, Devices, And Applications (p. 319-364) - 1/1/2017

10.1201/9781315364407 View at source

• iMarina

S. FERNANDEZ-GARRIDO, Z. GACEVIC, E. CALLEJA, A. REDONDO-CUBERO, R. GAGO, E.MUÑOZ "A Comprehensive Diagram to Grow Inaln Alloys By Plasma-Assisted Molecular Beam Epitaxy" 15th European Molecular Beam Epitaxy Workshop Zakopane (Poland), 2009

"A Comprehensive Diagram To Grow Inaln Alloys By Plasma-Assisted Molecular Beam Epitaxy" (p. 0-0) - 8/3/2009

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Z. GACEVIC, S. FERNÁNDEZ-GARRIDO, E. CALLEJA "Current status and further challenge in MBE growth of lattice-matched InAlN/GaN Bragg reflectors" 8th International Conference on Nitride Semiconductors Jeju (Korea), 2009

"Current Status And Further Challenge In Mbe Growth Of Lattice-Matched Inaln/Gan Bragg Reflectors" (p. 0-0) - 18/5/2009

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Z. GACEVIC, S. FERNÁNDEZ-GARRIDO, E. CALLEJA, E.LUNA, A. TRAMPERT "Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma assisted molecular beam epitaxy" 15th European Molecular Beam Epitaxy Workshop Zakopane (Poland

"Growth And Characterization Of Lattice-Matched Inaln/Gan Bragg Reflectors Grown By Plasma Assisted Molecular Beam Epitaxy" (p. 0-0) - 8/3/2009

• iMarina

Z. GACEVIC, S. FERNÁNDEZ-GARRIDO, E. CALLEJA "New approach to grow high reflectivity Al(Ga)N bragg reflectors by plasma-assited molecular beam epitaxy" 8th International Conference on Nitride Semiconductors Jeju (Korea), 2009

"New Approach To Grow High Reflectivity Al(Ga)N Bragg Reflectors By Plasma-Assited Molecular Beam Epitaxy" (p. 0-0) - 18/10/2009

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Z. Gacevic, S. Fernández-Garrido, E. Calleja, D. Hosseini, S. Estrade and F. Peiró "Structural properties of InAlN single layers nearly latice-matched to GaN grown by plasma assisted molecular beal epitaxy"

"Structural Properties Of Inaln Single Layers Nearly Latice-Matched To Gan Grown By Plasma Assisted Molecular Beal Epitaxy" (p. 0-0) - 20/3/2011

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J.M. Ulloa, M. Montes, K. Yamamoto, Z. Gacevic, A. Guzmán, A. Hierro, M. Bozkurt, P.M.Koenraad, D. Fernández, D. González and D. Sales "Tuning the size, strain and band offsets of InAs/GaAs quantum dots through a thin GaAs(Sb)(N) capping layer"

"Tuning The Size, Strain And Band Offsets Of Inas/Gaas Quantum Dots Through A Thin Gaas(Sb)(N) Capping Layer" (p. 0-0) - 20/3/2011

• iMarina

Stacked GaAsSbN-capped InAs/GaAs quantum dots for enhanced solar cell efficiency

18th Internationa Conference On Molecular Beam Epitaxy (p. 10-15) - 7/12/2014

• iMarina

A diagram to grow InAlN layers on (0001)GaN by plasma-assisted molecular beam epitaxy International workshop on nitrides Semiconductors 2008, 6-10 de Octubre 2008 Montreux, (Suiza), 2008

A Diagram To Grow Inaln Layers On (0001)Gan By Plasma-Assisted Molecular Beam Epitaxy (p. 0-0) - 6/10/2008

• iMarina

Electrical and surface characterization of wet-etched InAlN/AlN/GaN HEMTs

Actas Del Emc2012 (p. 1-3) - 20/6/2012

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Invisible lenses with isotropic materials

European Conference On Biomedical Optics, Ecbo 2013 - 1/1/2007

10.1364/fio.2007.fthu6 View at source

• ISSN 21622701

• iMarina

nxGa1-xN layers, nanowires, and nanodots on Silicon for clean energy applications

1/1/2017

• iMarina

Investigations on III-nitrides nanostructures: application to renewable energies and bio-sensing

1/1/2016

• iMarina