Characterisation of strained (111)B InGaAs/GaAs quantum well lasers with intracavity optical modulator

Microelectronics Journal (p. 547-552) - 1/1/2002

10.1016/s0026-2692(02)00017-4 View at source

• ISSN 00262692

• iMarina

AlGaN nanocolumns and AlGaN/GaN/AlGaN nanostructures grown by molecular beam epitaxy

Physica Status Solidi B-Basic Solid State Physics (p. 717-721) - 1/12/2002

10.1002/1521-3951(200212)234:3<717::aid-pssb717>3.0.co;2-8 View at source

• ISSN 15213951

• iMarina

Spontaneous emission study of (111) InGaAs/GaAs quantum well lasers

Microelectronics Journal (p. 589-593) - 1/7/2002

10.1016/s0026-2692(02)00024-1 View at source

• ISSN 00262692

• iMarina
• iMarina

Characterization of GaN quantum discs embedded in AlxGa1-xN nanocolumns grown by molecular beam epitaxy

Physical Review b - 1/1/2003

10.1103/physrevb.68.125305 View at source

• ISSN 01631829

• iMarina

Dilute nitride based double-barrier quantum-well infrared photodetector operating in the near infrared

Applied Physics Letters (p. 3111-3113) - 13/10/2003

10.1063/1.1618931 View at source

• ISSN 00036951

• iMarina

Effect of nitrogen on the band structure and material gain of InyGa1-yAs1-xNx-GaAs quantum wells

Ieee Journal Of Selected Topics In Quantum Electronics (p. 716-722) - 1/5/2003

10.1109/jstqe.2003.818860 View at source

• ISSN 1077260X

• iMarina

Annealing effects on the crystal structure of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy

Journal Of Applied Physics (p. 2319-2324) - 15/8/2003

10.1063/1.1591416 View at source

• ISSN 00218979

• iMarina

Influence of substrate misorientation and growth temperature on N incorporation in InGaAsN/GaAs quantum wells grown on (111)B GaAs

Physica E-Low-Dimensional Systems & Nanostructures (p. 356-361) - 1/1/2004

10.1016/j.physe.2003.11.282 View at source

• ISSN 13869477

• iMarina

Effect of nitrogen ions on the properties of InGaAsN quantum wells grown by plasma-assisted molecular beam epitaxy

Iee Proceedings-Optoelectronics (p. 305-308) - 1/1/2004

10.1049/ip-opt:20040910 View at source

• ISSN 13502433

• iMarina

Optoelectronic properties of 2-D and 3-D-grown GaInNAs/GaAs QW light emitting diodes and laser diodes

Iee Proceedings-Optoelectronics (p. 421-425) - 1/10/2004

10.1049/ip-opt:20040911 View at source

• ISSN 13502433

• iMarina

InAs Quantum Dot Formation Studied at the Atomic Scale by Cross-sectional Scanning Tunnelling Microscopy

Handbook Of Self Assembled Semiconductor Nanostructures For Novel Devices In Photonics And Electronics (p. 165-200) - 1/1/2008

10.1016/b978-0-08-046325-4.00005-0 View at source

• iMarina

From Dot to Ring: Tunable Exciton Topology in Type-II InAs/GaAsSb Quantum Dots

Nanoscience And Technology (p. 57-88) - 1/1/2018

10.1007/978-3-319-95159-1_3 View at source

• ISSN 14344904

• iMarina

Piezoelectric effects in InGaAs Quantum Well Lasers grown on (111)B GaAs substrates

Proceedings Of Spie - The International Society For Optical Engineering (p. 215-226) - 9/9/2001

10.1117/12.432568 View at source

• ISSN 0277786X

• iMarina
• iMarina

Optimization of InGaAsN on GaAs (111)B for semicnductor laser devices

2005 Spanish Conference On Electron Devices (p. 319-322) - 1/12/2005

10.1109/sced.2005.1504392 View at source

• ISSN 0780388100

• iMarina
• iMarina

Effects of rapid thermal annealing on InGaAsN quantum well based devices grown on misoriented (111)B GaAs

Proceedings Of Spie - The International Society For Optical Engineering (p. 766-773) - 9/12/2005

10.1117/12.608415 View at source

• ISSN 0277786X

• iMarina

Influence of carrier localization on the performance of MBE grown GaInNAs/GaAs QW light emitting diodes and laser diodes

Proceedings Of Spie - The International Society For Optical Engineering (p. 81-90) - 9/12/2005

10.1117/12.608369 View at source

• ISSN 0277786X

• iMarina

Analysis of the room temperature performance of 1.3-1.52 mu m GaInNAs/GaAs LDs grown by MBE

Proceedings Of Spie - The International Society For Optical Engineering (p. 72-80) - 9/12/2005

10.1117/12.608368 View at source

• ISSN 0277786X

• iMarina
• iMarina

(Ga,In)(N,As)/GaAs quantum wells grown by molecular beam epitaxy for above 1.3 mu m low threshold lasers

Proceedings Of Spie - The International Society For Optical Engineering (p. 781-789) - 12/12/2005

10.1117/12.608752 View at source

• ISSN 0277786X

• iMarina
• iMarina

Atomic scale study of the impact of the strain and composition of the capping layer on the formation of InAs quantum dots

Journal Of Applied Physics - 1/1/2007

10.1063/1.2722738 View at source

• ISSN 00218979

• iMarina

I. W.D. Drouzas, J. M. Ulloa, P. M. Koenraad, D. J. Mowbray, M. Steer, H. Y. Liu, M. Hopkinson "InAs self-assembled quantum dots with a GaAsSb strain reducing layer: Structural and compositional analysis by cross sectional scanning tunnelling microscopy"

2/4/2007

• iMarina

J. M. Ulloa, C. Çelebi, P. Offermans, P.M. Koenraad, A. Simon, E. Gapihan, A. Letoublon, N. Bertru, I. Drouzas, D.J. Mowbray, M.J. Steer, M. Hopkinson "Capping of InAs quantum dots studied at the atomic scale by cross-sectional scanning tunneling micros

2/4/2007

• iMarina

J. M. Ulloa, P. M. Koenraad, E. Gapihan, A. Letoublon, N. Bertru "Double capping of InAs/InP (311)B quantum dots studied by cross-sectional scanning tunneling microscopy" One day Quantum Dot Meeting 2007 Nottingham (UK) 2 al 5 de abril de 2007 2007

2/4/2007

• iMarina

Desarrollo de laseres horizontales y de cavidad vertical para La banda de 1.35 a 1.55 micras basados en pozos cuánticos de gainnas/gaas

Period: 31-12-2005 - 31-03-2009

Type of funding: National

• iMarina

Nano y microdispositivos basados en ZnO para la detección de H2 y UV.

Period: 01-01-2009 - 31-12-2011

Type of funding: National

Amount of funding: 207636,00 Euros.

• iMarina

Regrowth of a laterally-biased double quantum well tunable detector

Period: 01-03-2009 - 28-02-2010

Type of funding: International

Amount of funding: 70000,00 Euros.

• iMarina

ZNMGO-based nanocolumnar and core-shell leds with high power efficiencies

Period: 01-12-2010 - 30-11-2013

Type of funding: National

Amount of funding: 174336,00 Euros.

• iMarina

Aleaciones emergentes de nitruros diluidos III-V y nanoestructuras relacionadas para aplicaciones fotovoltaicas y de fotodetección de alta eficiencia

Period: 01-01-2014 - 31-12-2016

Type of funding: National

Amount of funding: 103220,41 Euros.

• iMarina

Emerging diluted III-V-nitrides and related engineered nanostructures for high efficient photovoltaic and photodetection applications

Period: 01-01-2014 - 31-12-2016

• iMarina

Zinc Oxide For TeraHertz Cascade Devices

Period: 01-09-2015 - 29-02-2020

Type of funding: International

Amount of funding: 698871,25 Euros.

• iMarina

Nuevas nanoestructuras basadas en Sb para aplicaciones fotovoltaicas de alta eficiencia

Period: 30-12-2016 - 31-12-2020

Type of funding: National

Amount of funding: 90750,00 Euros.

• iMarina

Quantum Semiconductor Technologies Exploiting Antimony

Period: 01-12-2020 - 30-11-2024

Type of funding: International

Amount of funding: 250904,88 Euros.

• iMarina

Antimóniuros cuánticos para fotónica cuántica y fotovoltaica: fabricación de materiales y dispositivos

Period: 01-06-2020 - 31-05-2023

Type of funding: National

Amount of funding: 82280,00 Euros.

• iMarina

Propiedades ópticas y estructurales de nanoestructuras de Zn(Cd)(Mg)O

1/1/2015

• iMarina

Tuning the properties of InAs/GaAs quantum dots through a modified capping layer: application to optoelectronic devices

1/1/2017

• iMarina

Structures based on GaAs(Sb)(N) semiconductor alloys for high efficiency multi-junction solar cells

1/1/2019

• iMarina